6N9 UNISONIC TECHNOLOGIES CO., LTD 6.2A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N9 is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N9 is generally applied in high efficiency switch mode power supplies. FEATURES * R DS(ON) < 2.3Ω @ V GS =1V, I D =3.1A * Fast switching * 1% avalanche tested * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 1 2 3 Packing 6N9L-TA3-T 6N9G-TA3-T TO-22 G D S Tube 6N9L-TF3-T 6N9G-TF3-T TO-22F G D S Tube 6N9L-TF1-T 6N9G-TF1-T TO-22F1 G D S Tube 6N9L-TF34-T 6N9G-TF34-T TO-22F4 G D S Tube 6N9L-T2Q-T 6N9G-T2Q-T TO-262 G D S Tube 6N9L-T2ST-T 6N9G-T2ST-T TO-262ST G D S Tube 6N9L-TQ2-T 6N9G-TQ2-T TO-263 G D S Tube 6N9L-TQ2-R 6N9G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source 6N9L-TA3-T (1) Packing Type (2) Package Type (3) Green Package (1) T: Tube, R: Tape Reel (2) TA3: TO-22, TF3: TO-22F, TF1: TO-22F1 TF34: TO-22F4, T2Q: TO-262, T2ST: TO-262ST, TQ2: TO-263 (3) L: Lead Free, G: Halogen Free and Lead Free 1 of 8 Copyright 217 Unisonic Technologies Co., Ltd
6N9 MARKING UNISONIC TECHNOLOGIES CO., LTD 2 of 8
6N9 ABSOLUTE MAXIMUM RATINGS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 9 V Gate-Source Voltage V GSS ±3 V Drain Current Continuous (T C =25 C) I D 6.2 A Pulsed (Note 2) I DM 24 A Avalanche Energy Single Pulsed (Note 3) E AS 3 mj Repetitive (Note 2) E AR 16.7 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-22/TO-262 167 W TO-262ST/TO-263 P D TO-22F/TO22F1 5 W TO-22F4 Junction Temperature T J +15 C Storage Temperature T STG -55 ~ +15 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 16.6mH, I AS = 6A, V DD = 5V, R G = 25Ω, Starting T J = 25 C 4. I SD 6A, di/dt 2A/µs, V DD BV DSS, Starting T J = 25 C THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θ JA 62.5 C/W Junction to Case TO-22/TO-262.75 C/W TO-262ST/TO-263 θ JC TO-22F/TO22F1 2.5 C/W TO-22F4 UNISONIC TECHNOLOGIES CO., LTD 3 of 8
6N9 ELECTRICAL CHARACTERISTICS (T J =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =25µA, V GS =V 9 V Breakdown Voltage Temperature Coefficient BV DSS / T J Reference to 25 C, I D =25µA 1.7 V/ C Drain-Source Leakage Current I DSS V DS =9V, V GS =V 1 V DS =72V, T C =125 C 1 µa Gate- Source Leakage Current Forward V GS =+3V, V DS =V +1 na I GSS Reverse V GS =-3V, V DS =V -1 na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I D =25µA 3. 5. V Static Drain-Source On-State Resistance R DS(ON) V GS =1V, I D =3.1A 1.85 2.3 Ω Forward Transconductance g FS V DS =5V, I D =3.1A (Note 1) 5.5 S DYNAMIC PARAMETERS Input Capacitance C ISS 126 177 pf Output Capacitance C OSS V GS =V, V DS =25V, f=1.mhz 16 18 pf Reverse Transfer Capacitance C RSS 15 3 pf SWITCHING PARAMETERS Total Gate Charge (Note 1, 2) Q G 4 5 nc V GS =1V, V DS =5V, I D =1.3A Gate to Source Charge Q GS 9.6 nc (Note 1, 2) Gate to Drain Charge Q GD 13 nc Turn-ON Delay Time (Note 1, 2) t D(ON) 75 8 ns Rise Time t R V DD =3V, I D =1A, R G =25Ω 152 19 ns Turn-OFF Delay Time t D(OFF) (Note 1, 2) 2 24 ns Fall-Time t F 11 15 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 6. A Maximum Body-Diode Pulsed Current I SM 24 A Drain-Source Diode Forward Voltage V SD I S =6.2A, V GS =V 1.4 V Body Diode Reverse Recovery Time t rr I S =6.2A, V GS =V, 63 ns Body Diode Reverse Recovery Charge Q rr di F /dt=1a/µs (Note 1) 6.9 µc Notes: 1. Pulse Test: Pulse width 3µs, Duty cycle 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD 4 of 8
6N9 TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + R G V DS - L I SD V GS V DD Driver Same Type as DUT dv/dt controlled by R G I SD controlled by pulse period V GS (Driver) Gate Pulse Width D= Gate Pulse Period 1V I FM, Body Diode Forward Current I SD (DUT) di/dt I RM Body Diode Reverse Current V DS (DUT) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD 5 of 8
6N9 TEST CIRCUITS AND WAVEFORMS(Cont.) Same Type as DUT V GS 12V 1V Q G 2nF 5kΩ 3nF V DS Q GS Q GD V GS 3mA DUT Gate Charge Test Circuit Charge Gate Charge Waveforms V DS BV DSS E AS = 1 2 2 LIAS BV DSS -V DD R G I D L BV DSS I AS 1V I D (t) t P DUT V DD V DD V DS (t) Unclamped Inductive Switching Test Circuit t P Time Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 6 of 8
6N9 TYPICAL CHARACTERISTICS 8 Drain Current vs. Source to Drain Voltage 6 Drain-Source On-State Resistance Characteristics 6 5 4 V GS =1V, I D =3.1A 4 3 2 2 1.2.4.6.8 Source to Drain Voltage, V SD (V) 1. 2 4 6 Drain to Source Voltage, V DS (V) 8 3 Drain Current vs. Gate Threshold Voltage Drain Current vs. Drain-Source Breakdown Voltage 1 25 8 Drain Current, ID (µa) 2 15 1 5 Drain Current, ID (µa) 6 4 2 1 2 3 4 Gate Threshold Voltage, V TH (V) 2 4 6 8 1 Drain-Source Breakdown Voltage, BV DSS (V) Drain-Source Current, ID (A) Drain Current, ID (A) UNISONIC TECHNOLOGIES CO., LTD 7 of 8
6N9 TYPICAL CHARACTERISTICS (Cont.) 1 Transient Thermal Response Curve Duty=.5 1-1.2.1.5 NOTES: 1.θJC(t)=.75D/W Max 2.Duty = t1/t2 3.TJ-TC = PD-θJC(t).2.1 PD 1-2 Single pulse t1 t2 1-5 1-4 1-3 1-2 1-1 1 1 1 Pulse Width, t 1 (sec) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 8 of 8