FCMT80N65S3 N-Channel SUPERFET III Easy-Drive MOSFET 650 V, 7 A, 80 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 52 mω Ultra Low Gate Charge (Typ. Q g = 33 nc) Low Effective Output Capacitance (Typ. C oss(eff.) = 305 pf) 0% Avalanche Tested RoHS Compliant Applications Telecom / Server Power Supplies Industrial Power Supply UPS/Solar Description SuperFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easy-drive series helps manage EMI issues and allows for easier design implementation. The Power88 package is an ultra-slim surface-mount package ( mm high) with a low profile and small footprint (8x8 mm 2 ). SuperFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level (MSL ). D S2 S2S G G S : Driver Source S2 : Power Source Power88 S S2 Absolute Maximum Ratings T C = 25 o C unless otherwise noted. Symbol Parameter FCMT80N65S3 Unit V DSS Drain to Source Voltage 650 V V GSS Gate to Source Voltage Thermal Characteristics - DC ±30 V - AC (f > Hz) ±30 V I D Drain Current - Continuous (T C = 25 o C) 7 - Continuous (T C = 0 o C) A I DM Drain Current - Pulsed (Note ) 42.5 A E AS Single Pulsed Avalanche Energy (Note 2) 80 mj I AS Avalanche Current (Note 2) 2.4 A E AR Repetitive Avalanche Energy (Note ).39 mj dv/dt MOSFET dv/dt 0 Peak Diode Recovery dv/dt (Note 3) 20 P D Power Dissipation (T C = 25 o C) 39 W - Derate Above 25 o C. W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering, /8 from Case for 5 Seconds 300 o C Symbol Parameter FCMT80N65S3 Unit R θjc Thermal Resistance, Junction to Case, Max. 0.9 o C/W R θja Thermal Resistance, Junction to Ambient, Max. 45 V/ns Semiconductor Components Industries, LLC, 207 December, 207, Rev..0 Publication Order Number: FCMT80N65S3/D
Package Marking and Ordering Information Part Number Top Mark Package Reel Size Tape Width Quantity FCMT80N65S3 FCMT80N65S3 Power88 3 3.3 mm 3000 Electrical Characteristics T C = 25 o C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics V GS = 0 V, I D = ma, T J = 25 C 650 - - V BV DSS Drain to Source Breakdown Voltage V GS = 0 V, I D = ma, T J = 50 C 700 - - V ΔBV DSS Breakdown Voltage Temperature I / ΔT J Coefficient D = ma, Referenced to 25 o C - 0.64 - V/ o C V DS = 650 V, V GS = 0 V - - I DSS Zero Gate Voltage Drain Current μa V DS = 520 V, T C = 25 o C -.8 - I GSS Gate to Body Leakage Current V GS = ±30 V, V DS = 0 V - - ±0 na On Characteristics V GS(th) Gate Threshold Voltage V GS = V DS, I D =.8 ma 2.5-4.5 V R DS(on) Static Drain to Source On Resistance V GS = V, I D = 8.5 A - 52 80 mω g FS Forward Transconductance V DS = 20 V, I D = 8.5 A - - S Dynamic Characteristics C iss Input Capacitance V DS = 400 V, V GS = 0 V, - 350 - pf C oss Output Capacitance f = MHz - 30 - pf C oss(eff.) Effective Output Capacitance V DS = 0 V to 400 V, V GS = 0 V - 305 - pf C oss(er.) Energy Related Output Capacitance V DS = 0 V to 400 V, V GS = 0 V - 42 - pf Q g(tot) Total Gate Charge at V V DS = 400 V, I D = 8.5 A, - 33 - nc Q gs Gate to Source Gate Charge V GS = V - 8 - nc Q gd Gate to Drain Miller Charge (Note 4) - 4 - nc ESR Equivalent Series Resistance f = MHz - 0.5 - Ω Switching Characteristics t d(on) Turn-On Delay Time - 7 - ns t r Turn-On Rise Time V DD = 400 V, I D = 8.5 A, - 6 - ns t d(off) Turn-Off Delay Time V GS = V, R g = 4.7 Ω - 43 - ns t f Turn-Off Fall Time (Note 4) - 6 - ns Source-Drain Diode Characteristics I S Maximum Continuous Source to Drain Diode Forward Current - - 7 A I SM Maximum Pulsed Source to Drain Diode Forward Current - - 42.5 A V SD Source to Drain Diode Forward Voltage V GS = 0 V, I SD = 8.5 A - -.2 V t rr Reverse Recovery Time V GS = 0 V, I SD = 8.5 A, - 290 - ns Q rr Reverse Recovery Charge di F /dt = 0 A/μs - 3.9 - μc Notes:. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I AS = 2.4 A, R G = 25 Ω, starting T J = 25 C. 3. I SD 9 A, di/dt 200 A/μs, V DD 400V, starting T J = 25 C. 4. Essentially independent of operating temperature typical characteristics. 2
Typical Performance Characteristics RDS(ON), ID, Drain Current[A] Drain-Source On-Resistance [Ω] 80 Figure. On-Region Characteristics V GS =.0V 8.0V 7.0V 6.5V 6.0V 5.5V. 250μs Pulse Test 2. T C = 25 o C 20 V DS, Drain-Source Voltage[V] Figure 2. Transfer Characteristics 2 3 4 5 6 7 8 9 V GS, Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.4 0.3 0.2 *Note: T C = 25 o C V GS = V V GS = 20V IS, Reverse Drain Current [A] ID, Drain Current[A] 50 0 0.0. V DS = 20V 2. 250μs Pulse Test. V GS = 0V 2. 250μs Pulse Test 50 o C 50 o C -55 o C 25 o C -55 o C 25 o C 0.0 0 20 30 40 I D, Drain Current [A] 0000 Figure 5. Capacitance Characteristics 0.00 0.0 0.5.0.5 V SD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics *Note: I D = 8.5A Capacitances [pf] 000 00 0 *Note:. V GS = 0V 2. f = MHz C iss C oss Ciss = Cgs + Cgd (Cds = shorted) C rss Coss = Cds + Cgd Crss = Cgd 0 00 V DS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] 8 6 4 2 V DS = 30V V DS = 400V 0 0 5 5 20 25 30 35 40 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature.2..0 0.9 0.8. V GS = 0V 2. I D = ma -50 0 50 0 50 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 0 30μs RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0.5.0 0.5 0.0. V GS = V 2. I D = 8.5A -50 0 50 0 50 T J, Junction Temperature [ o C] Figure. Maximum Drain Current vs. Case Temperature 20 ID, Drain Current [A] Operation in This Area is Limited by R DS(on) 0μs ms ms DC. T C = 25 o C 2. T J = 50 o C 3. Single Pulse 0.0 0 00 V DS, Drain-Source Voltage [V] ID, Drain Current [A] 5 5 0 25 50 75 0 25 50 T C, Case Temperature [ o C] Figure. Eoss vs. Drain to Source Voltage 8 6 E OSS [μj] 4 2 0 0 30 260 390 520 650 V DS, Drain to Source Voltage [V] 4
Typical Performance Characteristics (Continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 0.0 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.05 0.02 0.0 SINGLE PULSE Figure 2. Transient Thermal Response Curve 0.00-5 -4-3 -2-0 t, RECTANGULAR PULSE DURATION (sec) P DM t t 2 NOTES: Z θjc (t) = r(t) x R θjc R θjc = 0.9 o C/W Peak T J = P DM x Z θjc (t) + T C Duty Cycle, D = t / t 2 5
Figure 3. Gate Charge Test Circuit & Waveform Figure 4. Resistive Switching Test Circuit & Waveforms Figure 5. Unclamped Inductive Switching Test Circuit & Waveforms 6
Figure 6. Peak Diode Recovery dv/dt Test Circuit & Waveforms 7
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