2N6515, 2N6517, 2N65 High Voltage Transistors NPN and PNP Features Voltage and Current are Negative for PNP Transistors PbFree Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N6515 2N6517 2N65 Unit Collector Emitter Voltage V CEO 2 3 Collector Base Voltage V CBO 2 3 Emitter Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N65 V EBO 6. Base Current I B 2 madc Collector Current Continuous I C madc Total Device Dissipation @ T A = Derate above Total Device Dissipation @ T C = Derate above Operating and Storage Junction Temperature Range P D 625 P D 1.5 12 mw mw/ C Watts mw/ C T J, T stg 55 to +1 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient Thermal Resistance, JunctiontoCase R JA C/W R JC 83.3 C/W 2 BASE 1 EMITTER 1 2 3 NPN MARKING DIAGRAM 2N65xx YWW 2 BASE TO92 CASE 29 STYLE 1 COLLECTOR 3 1 EMITTER PNP Y WW = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 4 May, 4 Rev. 4 1 Publication Order Number: 2N6515/D
2N6515, 2N6517, 2N65 ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) (I C = madc, I B = ) 2N6515 2N6517, 2N65 V (BR)CEO 2 3 CollectorBase Breakdown Voltage (I C = Adc, I E = ) 2N6515 2N6517, 2N65 V (BR)CBO 2 3 EmitterBase Breakdown Voltage (I E = Adc, I C = ) 2N6515, 2N6517 2N65 V (BR)EBO 6. Collector Cutoff Current (V CB = 1, I E = ) 2N6515 (V CB = 2, I E = ) 2N6517, 2N65 I CBO nadc Emitter Cutoff Current (V EB =, I C = ) 2N6515, 2N6517 (V EB = 4., I C = ) 2N65 I EBO nadc ON CHARACTERISTICS (Note 1) DC Current Gain (I C = madc, V CE = ) 2N6515 2N6517, 2N65 h FE 35 (I C = madc, V CE = ) 2N6515 2N6517, 2N65 (I C = madc, V CE = ) 2N6515 2N6517, 2N65 (I C = madc, V CE = ) 2N6515 2N6517, 2N65 45 2 (I C = madc, V CE = ) 2N6515 2N6517, 2N65 25 15 CollectorEmitter Saturation Voltage (I C = madc, I B = madc) (I C = madc, I B = 2. madc) (I C = madc, I B = 3. madc) (I C = madc, I B = madc) BaseEmitter Saturation Voltage (I C = madc, I B = madc) (I C = madc, I B = 2. madc) (I C = madc, I B = 3. madc) BaseEmitter On Voltage (I C = madc, V CE = ) 1. Pulse Test: Pulse Width s, Duty Cycle 2.%. V CE(sat) V BE(sat)..35..75.85.9 V BE(on) 2. 2
2N6515, 2N6517, 2N65 SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 1) (I C = madc, V CE =, f = MHz) CollectorBase Capacitance (V CB =, I E =, f = MHz) EmitterBase Capacitance (V EB =.5, I C =, f = MHz) 2N6515, 2N6517 2N65 SWITCHING CHARACTERISTICS TurnOn Time (V CC =, V BE(off) = 2., I C = madc, I B1 = madc) TurnOff Time (V CC =, I C = madc, I B1 = I B2 = madc) 1. Pulse Test: Pulse Width s, Duty Cycle 2.%. f T 4 MHz C cb 6. pf C eb 8 pf t on s t off 3.5 s ORDERING INFORMATION Device Package Shipping 2N6515 TO92 Unit / Bulk 2N6515RLRM TO92 Tape & Ammo Box 2N6517 TO92 Unit / Bulk 2N6517RLRA TO92 Tape & Reel 2N6517RLRP TO92 Tape & Ammo Box 2N65RLRA TO92 Tape & Reel 2N65RLRAG TO92 (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 3
2N6515, 2N6517, 2N65 V CE = V T J = 1 hfe, DC CURRENT GAIN 55 C 2. 3. 7. Figure 1. DC Current Gain NPN 2N6515 hfe, DC CURRENT GAIN V CE = V T J = 1 55 C h FE, DC CURRENT GAIN V CE = V T J = 1 55 C 2. 3. 7. 2. 3. 7. Figure 2. DC Current Gain NPN 2N6517 Figure 3. DC Current Gain PNP 2N65 f, T CURRENTGAIN BANDWIDTH PRODUCT (MHz) V CE = V f = MHz 2. 3. 7. f, T CURRENTGAIN BANDWIDTH PRODUCT (MHz) V CE = V f = MHz 2. 3. 7. Figure 4. CurrentGain Bandwidth Product Figure 5. CurrentGain Bandwidth Product PNP 2N65 4
2N6515, 2N6517, 2N65 1.4 1.2 1.4 1.2 V, VOLTAGE (VOLTS).8.6.4 V BE(sat) @ I C /I B = V BE(on) @ V CE = V V, VOLTAGE (VOLTS).8.6.4 V BE(sat) @ I C /I B = V BE(on) @ V CE = V.2 V CE(sat) @ I C /I B = V CE(sat) @ I C /I B = 2. 3. 7. Figure 6. On Voltages.2 V CE(sat) @ I C /I B = V CE(sat) @ I C /I B = 2. 3. 7. Figure 7. On Voltages PNP 2N65 R θ V, TEMPERATURE COEFFICIENTS (mv/ C) 2.5 2. 1.5.5.5 1.5 2. R VC for V CE(sat) R VB for V BE IC IB to 1 55 C to 55 C to 1 2.5 2. 3. 7. Figure 8. Temperature Coefficients R θ V, TEMPERATURE COEFFICIENTS (mv/ C) 2.5 2. 1.5.5.5 1.5 2. R VB for V BE IC IB R VC for V CE(sat) to 1 55 C to 2.5 2. 3. 7. Figure 9. Temperature Coefficients PNP 2N65 55 C to 1 C, CAPACITANCE (pf) 7. 3. 2. C eb C cb C eb C, CAPACITANCE (pf) 7. 3. 2. C cb.2.5 2. V R, REVERSE VOLTAGE (VOLTS).2.5 2. V R, REVERSE VOLTAGE (VOLTS) Figure. Capacitance Figure 11. Capacitance PNP 2N65 5
2N6515, 2N6517, 2N65 k t d @ V BE(off) = 2. V V CE(off) = V I C /I B = k t r t d @ V BE(off) = 2. V V CE(off) = V I C /I B = t, TIME (ns) t r t, TIME (ns) 2. 3. 7. Figure 12. TurnOn Time 2. 3. 7. Figure 13. TurnOn Time PNP 2N65 t, TIME (ns) k 7. k k 3. k 2. k k t f t s V CE(off) = V I C /I B = I B1 = I B2 2. k k t s t f V CE(off) = V I C /I B = I B1 = I B2 2. 3. 7. 2. 3. 7. Figure 14. TurnOff Time Figure 15. TurnOff Time PNP 2N65 6
2N6515, 2N6517, 2N65 +V CC +.8 V V CC ADJUSTED FOR V CE(off) = V k 2.2 k k SAMPLING SCOPE 9.2 V PULSE WIDTH s t r, t f ns DUTY CYCLE % FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES 1/2MSD APPROXIMATELY 1.35 V (ADJUST FOR V (BE)off = 2. V) Figure 16. Switching Time Test Circuit r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED).7.5.3.2.1.7.5.3.2 D =.5.2.1.5 SINGLE PULSE SINGLE PULSE Z JC(t) = r(t) R JC Z JA(t) = r(t) R JA T J(pk) T C = P (pk) Z JC(t) T J(pk) T A = P (pk) Z JA(t).1.1.2.5 2. k 2. k k t, TIME (ms) k Figure 17. Thermal Response IC, COLLECTOR CURRENT (ma) T A = T C = ms s s ms 2. CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ T C = ) SECOND BREAKDOWN LIMIT CURVES APPLY 2N6515 BELOW RATED V CEO.5 2N6517, 2N65.5 2. V CE, COLLECTOREMITTER VOLTAGE (VOLTS) t 1 FIGURE A P P t P 1/f DUTY CYCLE t1 f t 1 tp PEAK PULSE POWER = P P P P Figure 18. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data 7
2N6515, 2N6517, 2N65 PACKAGE DIMENSIONS SEATING PLANE R A X X H V 1 N G P N B L K C D TO92 CASE 2911 ISSUE AL J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.175.5 4.45 5. B.1.2 4.32 5.33 C.125.165 3.18 4.19 D.16.21.47.533 G.45.55 1.15 1.39 H.95.5 2.42 2.66 J.15..39. K. 12. L.2 6.35 N.8.5 2.4 2.66 P. 2.54 R.115 2.93 V.135 3.43 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 36752175 or 8344386 Toll Free USA/Canada Fax: 36752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 1551 Phone: 813577338 8 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. 2N6515/D