Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs)

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Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs)

Device Structure

N-Channel MOSFET Providing electrons Pulling electrons (makes current flow) + + + Apply positive voltage to gate: Drives away holes and attracts electrons in the body under gate Creates an n-channel between the source and drain and now current can flow https://www.youtube.com/watch?v=tz62t-q_kec Electronic Devices: Field Effect Transistors

Operation with Zero Gate Voltage Two back-to-back diodes, High Resistance (Giga Ohms), No Current Flow Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.

Creating a Channel for Current Flow -v GS :gate to source voltage -V t : threshold voltage (v GS which channel starts conducting) -i DS : current flowing when v DS applied -Effective voltage (or overdrive voltage): v GS V t v OV v eff Charge in the channel: Q = C ( WL) ox v OV -Oxide capacitance: ε ox Cox = tox -Gate to source capacitance: C = C WL ox

Applying a small v DS

Operation as v DS increases Channel becomes more tapered and its resistance increases

Saturation region (BJT) Active region (BJT) Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.

Operation for v DS >>V OV (channel pinch-off, saturation mode of operation) i v D OV ' n GS W ( ) v L V 1 ' W id = kn( 2 L k ' = µ C n 1 = k 2 = v n ox t 2 OV )( v GS V t ) 2 Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.

P-Channel MOSFET Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.

P-Channel MOSFET Threshold voltage v Use absolute value GS V tp vgs V tp P-Channel transistor process transconductance parameter k ' = µ C p p ox P-Channel transistor transconductance parameter k p = µ p C ox ( L W ) Formulae are the same, switch sign of voltages Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.

Complementary MOS or CMOS Figure 5.10 Cross-section of a CMOS integrated circuit. The PMOS transistor is formed in a separate n-type region (n well). Another arrangement is also possible in which an n-type body is used and the n device is formed in a p well. Not shown are the connections made to the p-type body and to the n well; the latter functions as the body terminal for the p-channel device. Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.

Current-Voltage Characteristics Figure 5.11 (a) Circuit symbol for the n-channel enhancement-type MOSFET. (b) Modified circuit symbol with an arrowhead on the source terminal to distinguish it from the drain and to indicate device polarity (i.e., n channel). (c) Simplified circuit symbol to be used when the source is connected to the body or when the effect of the body on device operation is unimportant.

Table 5.1 Regions of Operation of the Enhancement NMOS Transistor

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc. Stepping V GS

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc. The i D v GS Characteristic 2 ' 2 ' ) ( 2 1 ) )( ( 2 1 OV n D t GS n D v L W k i V v L W k i = = in term of v OV :

Large-signal equivalent-circuit model (DC) of an n- channel MOSFET operating in the saturation

Channel Length Effect i D = 2 W ( L 1 ' k )( ) 2 n vgs Vtn (1 + λv Channel-length modulation DS )

i D = 1 2 k ' n W ( L )( v GS V tn ) 2 1 r 0 = ==> r0 = λi D V I A D Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.

Large-signal equivalent circuit model r 0 = 1 λ I D

Characteristics of the p-channel MOSFET Figure 5.19 (a) Circuit symbol for the p-channel enhancement-type MOSFET. (b) Modified symbol with an arrowhead on the source lead. (c) Simplified circuit symbol for the case where the source is connected to the body.

Table 5.2 Regions of Operation of the Enhancement PMOS Transistor

Example MOSFET Circuits at DC Given: I D =0.4mA, V D =0.5V, V t =0.7V, µ n C ox =100 µa/v 2, L=1 µm, W=32 µm, λ=0 Find: R D, R S

Example 5.6 (p. 281)

Example 5.7 (p. 264) Given: I D =0.5mA V D =3V V tp =-1V PMOS Find: R G1 R G2

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