Optocoupler, Photodarlington Output, High Gain, Single/Quad Channel, Half Pitch Mini-Flat Package

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Transcription:

TCMD, TCMD4 Optocoupler, Photodarlington Output, High Gain, Single/Quad Channel, Half Pitch Mini-Flat Package 9 8 FEATURES Low profile package (half pitch) 7298 7298_2 DESCRIPTION The TCMD, TCMD4 consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting diodes in either a 4 pin or 6 pin miniflat package. The elements provide a fixed distance between input and output for highest safety requirements. E C C 2 C A 4 pin 6 pin AC isolation test voltage 375 V RMS Low coupling capacitance of typical.3 pf Low temperature coefficient of CTR Wide ambient temperature range Material categorization: For definitions of compliance please see www.vishay.com/doc?9992 APPICLATIONS Programmable logic Modems Answering machines General applications AGENCY APPROVALS UL577, file no. E76222 system code M, double protection CSA 22.2 bulletin 5A, double protection DIN EN 6747-5-5 (VDE 884-5) FIMKO BSI ORDERING INFORMATION T C M D # SOP-# PART NUMBER 7 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, cul, FIMKO, BSI, VDE > 6 SOP-4 TCMD SOP-6, quad channel TCMD4 ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t P μs I FSM.5 A Power dissipation P diss mw Junction temperature T j 25 C Rev. 2.2, 25-Oct-2 Document Number: 8353 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TCMD, TCMD4 ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT Collector emitter voltage V CEO 35 V Emitter collector voltage V ECO 7 V Collector current I C 8 ma Collector peak current t P /T =.5, t P ms I CM ma Power dissipation P diss 5 mw Junction temperature T j 25 C COUPLER AC isolation test voltage (RMS) V () ISO 375 V RMS Total power dissipation P tot 25 mw Operating ambient temperature range T amb - 4 to + C Storage temperature range T stg - 4 to + 25 C Soldering temperature (2) T sld 26 C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. () Related to standard climate 23/5 DIN 54. (2) Wave soldering three cycles are allowed. Also refer to Assembly Instruction (www.vishay.com/doc?854). ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT input Forward voltage I F = 5 ma V F.25.6 V Junction capacitance V R = V, f = MHz C j 5 pf output Collector emitter voltage I C = μa V CEO 35 V Emitter collector voltage I E = μa V ECO 7 V Collector dark current V CE = V, I F =, E = I CEO na coupler Collector emitter saturation voltage I F = 2 ma, I C = 5 ma V CEsat V Cut-off frequency I F = ma, V CE = 5 V, R L = Ω f c khz Coupling capacitance f = MHz C k.3 pf Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT TCMD CTR 6 8 % I C /I F V CE = 2 V, I F = ma TCMD4 CTR 6 8 % SWITCHING CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Rise time Turn-off time V CE = 2 V, I C = ma, R L = Ω (see figure ) V CE = 2 V, I C = ma, R L = Ω (see figure ) t r 3 μs t off 25 μs Rev. 2.2, 25-Oct-2 2 Document Number: 8353 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TCMD, TCMD4 I F I F R G = 5 Ω I F + V CC I C = ma I C % 9 % t p t t p T =. t p = 5 s 4779 5 Ω R L Channel I Channel II Oscilloscope RI = MΩ CI = 2 pf % t p t d t r t on (= t d + t r ) t r t d t on Pulse duration Delay time Rise time Turn-on time t s t f t off t s t f t off (= t s + t f ) t Storage time Fall time Turn-off time 96 698 Fig. - Test Circuit, Non-Saturated Operation Fig. 2 - Switching Times SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification IEC 68 part 4//2 Comparative tracking index CTI 75 399 V IOTM 6 V V IORM 77 V P SO 265 mw I SI 3 ma T SI 5 C Creepage distance 5 mm Clearance distance 5 mm Insulation thickness, reinforce rated per IEC 695 2..5..4 mm Note As per IEC 6747-5-2, 7.4.3.8., this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) P tot - Total Power Dissipation (mw) 3 Coupled device 25 2 Phototransistor 5 IR-diode 5 4 8 2 96 7 T amb - Ambient Temperature ( C).3 I F = ma.2...8 2 4 6 8 4389 T amb - Ambient Temperature ( C) V - Forward Voltage (V) F Fig. 3 - Forward Voltage vs. Ambient Temperature Fig. 4 - Forward Voltage vs. Ambient Temperature Rev. 2.2, 25-Oct-2 3 Document Number: 8353 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TCMD, TCMD4 V CE = 2 V I F - Forward Current (ma) I C - Collector Current (ma)...4.8.2.6 2. 439 V F - Forward Voltage (V).. 4393 I F - Forward Current (ma) Fig. 5 - Forward Current vs. Forward Voltage Fig. 8 - Collector Current vs. Forward Current CTR rel - Relative Current Transfer Ratio 439.5.4.3.2...8.7.6 V CE = 5 V I F = ma.5-3 - 2-2 3 4 5 6 7 8 9 T amb - Ambient Temperature ( C) I C - Collector Current (ma) I F = 2 ma ma.5 ma.2 ma. ma.. 4394 V CE - Collector Emitter Voltage (V) Fig. 6 - Relative Current Transfer Ratio vs. Ambient Temperature Fig. 9 - Collector Current vs. Collector Emitter Voltage I CEO - Collector Dark Current, with Open Base (na) 4392 V CE = V I F = 2 3 4 5 6 7 8 9 T amb - Ambient Temperature ( C) Fig. 7 - Collector Dark Current vs. Ambient Temperature V CEsat - Collector Emitter Saturation Voltage (V)...8.7 CTR = 2 % used % 5 % 25 %.6 I C - Collector Current (ma) 4395 Fig. - Collector Emitter Saturation Voltage vs. Collector Current Rev. 2.2, 25-Oct-2 4 Document Number: 8353 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TCMD, TCMD4 CTR - Current Transfer Ratio (%) V CE = 2 V. 4396 I F - Forward Current (ma) Fig. - Current Transfer Ratio vs. Forward Current PACKAGE DIMENSIONS in millimeters 7 +.3 -.4 2.8 max. 2. max..9 2.5. ±. 4.4 ±.2.45 ±..27 nom..7 +.3 -.4.5 +. -.5 4 3 Possible footprint.27 5 7.6 2 Pin no. identification technical drawings according to DIN specifications 6283 Rev. 2.2, 25-Oct-2 5 Document Number: 8353 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TCMD, TCMD4.4 max. 7 + -.4.3.2 4.4 ±.2.9. ±..45 ±..27 nom..7 + -.4.3.5 +. -.5 7 x.27 = 8.89.27 8.89 2. max. Possible footprint 6 5 4 3 2 9 2 3 4 5 6 7 8 Pin no. identification 5 7.6 Drawing-No.: 6.544-533.3-4 Issue: ; 4.4. 5226 technical drawings according to DIN specifications PACKAGE MARKING MD V YWW M 68 TCMD4 V YWW M 68 2764-5 2764-6 Rev. 2.2, 25-Oct-2 6 Document Number: 8353 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

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