NPN + PNP Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht <For DTr1(NPN)> <For DTr2(PNP)> Outlin Paramtr Valu MT6 UMT6 V CC I C(MX.) Paramtr V CC I C(MX.) 50V 100m 10k 10k Valu 50V 100m 10k 10k SMT6 MD3 (SC-107C) IMD3 SOT-457 (SC-74) UMD3N SOT-363 (SC-88) Faturs 1) Both th DTC114 chip and DT114 chip in on packag. 2) Built-in bias rsistors nabl th configuration of an invrtr circuit without conncting xtrnal input rsistors (s innr circuit). 3) Th bias rsistors consist of thin-film rsistors with complt isolation to allow ngativ biasing of th input. Thy also hav th advantag of compltly liminating parasitic ffcts. 4) Only th on/off conditions nd to b st for opration, making th circuit dsign asy. 5) Lad Fr/RoHS Compliant. pplication Invrtr circuit, Intrfac circuit, Drivr circuit Packaging spcifications Part No. Packag Packag siz (mm) Taping cod Innr circuit Rl siz (mm) Tap width (mm) MD3 MT6 1616 T280 8 Basic ordring unit (pcs) Marking 8,000 D3 UMD3N UMT6 2021 TN 180 8 3,000 D3 IMD3 SMT6 2928 T108 180 8 OUT DTr1 GND OUT DTr2 GND IN IN MD3 / UMD3N IN IN R1 IMD3 R2 GND DTr2 OUT GND DTr1 OUT 3,000 D3 2014 ROHM Co., Ltd. ll rights rsrvd. 1/8 2014.12 - Rv.F
Data Sht bsolut maximum ratings (Ta = 25 C) Paramtr Symbol DTr1(NPN) DTr2(PNP) Unit Supply voltag V CC 50 50 V Input voltag V IN 10 to 40 40 to 10 V Output currnt I O 50 50 m Collctor currnt *1 I C(MX.) 100 100 m Powr dissipation MD3 / UMD3N *2 150 (Total) *3 mw P D IMD3 300 (Total) *4 mw Junction tmpratur T j 150 C Rang of storag tmpratur T stg 55 to 150 C lctrical charactristics(ta = 25 C) <For DTr1(NPN)> Paramtr Symbol Conditions Min. Typ. Max. Unit Input voltag V I(off) V CC = 5V, I O = 100 - - 0.5 V I(on) V O = 0.3V, I O = 10m 3.0 - - V Output voltag V O(on) I O / I I = 10m / 0.5m - 0.1 0.3 V Input currnt I I V I = 5V - - 0.88 m Output currnt I O(off) V CC = 50V, V I = 0V - - 0.5 DC currnt gain G I V O = 5V, I O = 5m 30 - - - Input rsistanc - 7 10 13 k Rsistanc ratio / - 0.8 1 1.2 - Transition frquncy f T *1 V C = 10V, I = 5m f = 100MHz - 250 - MHz lctrical charactristics(ta = 25 C) <For DTr2(PNP)> Paramtr Symbol Conditions Min. Typ. Max. Unit Input voltag V I(off) V CC = 5V, I O = 100 - - 0.5 V I(on) V O = 0.3V, I O = 10m 3.0 - - V Output voltag V O(on) I O / I I = 10m / 0.5m - 0.1 0.3 V Input currnt I I V I = 5V - - 0.88 m Output currnt I O(off) V CC = 50V, V I = 0V - - 0.5 DC currnt gain G I V O = 5V, I O = 5m 30 - - - Input rsistanc - 7 10 13 k Rsistanc ratio / - 0.8 1 1.2 - Transition frquncy f T *1 V C = 10V, I = 5m f = 100MHz *1 Charactristics of built-in transistor *2 ach trminal mountd on a rfrnc footprint *3 120mW pr lmnt must not b xcdd. *4 200mW pr lmnt must not b xcdd. - 250 - MHz 2014 ROHM Co., Ltd. ll rights rsrvd. 2/8 2014.12 - Rv.F
Data Sht lctrical charactristic curvs (Ta = 25 C) <For DTr1(NPN)> Fig.1 Input voltag vs. output currnt (ON charactristics) Fig.2 Output currnt vs. input voltag (OFF charactristics) INPUT VOLTG : V I(on) [V] INPUT VOLTG : V I(off) [V] Fig.3 Output currnt vs. output voltag Fig.4 DC currnt gain vs. output currnt 50 I I = 260 240 OUTPUT CURRNT : I O [m] 40 30 20 10 Ta=25ºC 220 200 180 160 140 120 100 DC CURRNT GIN : G I 0 0 5 10 0 OUTPUT VOLTG : V O [V] 2014 ROHM Co., Ltd. ll rights rsrvd. 3/8 2014.12 - Rv.F
Data Sht lctrical charactristic curvs (Ta = 25 C) <For DTr1(NPN)> Fig.5 Output voltag vs. output currnt OUTPUT VOLTG : V O(on) [V] lctrical charactristic curvs (Ta = 25 C) <For DTr2(PNP)> Fig.6 Input voltag vs. output currnt (ON charactristics) Fig.7 Output currnt vs. input voltag (OFF charactristics) INPUT VOLTG : V I(on) [V] INPUT VOLTG : V I(off) [V] 2014 ROHM Co., Ltd. ll rights rsrvd. 4/8 2014.12 - Rv.F
Data Sht lctrical charactristic curvs (Ta = 25 C) <For DTr2(PNP)> Fig.8 Output currnt vs. output voltag Fig.9 DC currnt gain vs. output currnt OUTPUT CURRNT : I O [m] -50-40 -30-20 -10 Ta=25ºC I I = 300 280 260 240 220 200 180 160 140 120 100 DC CURRNT GIN : G I 0 0-5 -10 0 OUTPUT VOLTG : V O [V] Fig.10 Output voltag vs. output currnt OUTPUT VOLTG : V O(on) [V] 2014 ROHM Co., Ltd. ll rights rsrvd. 5/8 2014.12 - Rv.F
Data Sht Dimnsions (Unit : mm) MT6 b D x S c L Lp H L Lp 1 y S 1 l1 S b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] 0.45 0.55 0.018 0.022 1 0.00 0.10 0.000 0.004 b 0.17 0.27 0.007 0.011 c 0.08 0.18 0.003 0.007 D 1.50 1.70 0.059 0.067 1.10 1.30 0.043 0.051 0.50 0.020 H 1.50 1.70 0.059 0.067 L 0.10 0.30 0.004 0.012 Lp - 0.35-0.014 x - 0.10-0.004 y - 0.10-0.004 b2-0.37-0.015 1 1.25 0.049 l1-0.45-0.018 Dimnsion in mm / inchs 2014 ROHM Co., Ltd. ll rights rsrvd. 6/8 2014.12 - Rv.F
Data Sht Dimnsions (Unit : mm) UMT6 D Q c H L1 Lp b x S 3 1 y S 1 S l1 b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] 0.80 1.00 0.031 0.039 1 0.00 0.10 0.000 0.004 3 0.25 0.010 b 0.15 0.30 0.006 0.012 c 0.10 0.20 0.004 0.008 D 1.90 2.10 0.075 0.083 1.15 1.35 0.045 0.053 0.65 0.026 H 2.00 2.20 0.079 0.087 L1 0.20 0.50 0.008 0.020 Lp 0.25 0.55 0.010 0.022 Q 0.10 0.30 0.004 0.012 x - 0.10-0.004 y - 0.10-0.004 b2-0.40-0.016 1 1.55 0.061 l1-0.65-0.026 Dimnsion in mm / inchs 2014 ROHM Co., Ltd. ll rights rsrvd. 7/8 2014.12 - Rv.F
Data Sht Dimnsions (Unit : mm) SMT6 D c Q L1 Lp H b x S 3 1 y S 1 S l1 b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] 1.00 1.30 0.039 0.051 1 0.00 0.10 0.000 0.004 3 0.25 0.010 b 0.25 0.40 0.010 0.016 c 0.09 0.25 0.004 0.010 D 2.80 3.00 0.110 0.118 1.50 1.80 0.059 0.071 0.95 0.037 H 2.60 3.00 0.102 0.118 L1 0.30 0.60 0.012 0.024 Lp 0.40 0.70 0.016 0.028 Q 0.20 0.30 0.008 0.012 x - 0.20-0.008 y - 0.10-0.004 b2 0.60-0.024 1 2.10 0.083 l1-0.90-0.035 Dimnsion in mm / inchs 2014 ROHM Co., Ltd. ll rights rsrvd. 8/8 2014.12 - Rv.F
Notic Nots 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) Th information containd hrin is subjct to chang without notic. Bfor you us our Products, plas contact our sals rprsntativ and vrify th latst spcifications : lthough ROHM is continuously working to improv product rliability and quality, smiconductors can brak down and malfunction du to various factors. Thrfor, in ordr to prvnt prsonal injury or fir arising from failur, plas tak safty masurs such as complying with th drating charactristics, implmnting rdundant and fir prvntion dsigns, and utilizing backups and fail-saf procdurs. ROHM shall hav no rsponsibility for any damags arising out of th us of our Poducts byond th rating spcifid by ROHM. xampls of application circuits, circuit constants and any othr information containd hrin ar providd only to illustrat th standard usag and oprations of th Products. Th priphral conditions must b takn into account whn dsigning circuits for mass production. Th tchnical information spcifid hrin is intndd only to show th typical functions of and xampls of application circuits for th Products. ROHM dos not grant you, xplicitly or implicitly, any licns to us or xrcis intllctual proprty or othr rights hld by ROHM or any othr partis. ROHM shall hav no rsponsibility whatsovr for any disput arising out of th us of such tchnical information. Th Products ar intndd for us in gnral lctronic quipmnt (i.. V/O dvics, communication, consumr systms, gaming/ntrtainmnt sts) as wll as th applications indicatd in this documnt. Th Products spcifid in this documnt ar not dsignd to b radiation tolrant. For us of our Products in applications rquiring a high dgr of rliability (as xmplifid blow), plas contact and consult with a ROHM rprsntativ : transportation quipmnt (i.. cars, ships, trains), primary communication quipmnt, traffic lights, fir/crim prvntion, safty quipmnt, mdical systms, srvrs, solar clls, and powr transmission systms. Do not us our Products in applications rquiring xtrmly high rliability, such as arospac quipmnt, nuclar powr control systms, and submarin rpatrs. ROHM shall hav no rsponsibility for any damags or injury arising from non-complianc with th rcommndd usag conditions and spcifications containd hrin. ROHM has usd rasonabl car to nsur th accuracy of th information containd in this documnt. Howvr, ROHM dos not warrants that such information is rror-fr, and ROHM shall hav no rsponsibility for any damags arising from any inaccuracy or misprint of such information. Plas us th Products in accordanc with any applicabl nvironmntal laws and rgulations, such as th RoHS Dirctiv. For mor dtails, including RoHS compatibility, plas contact a ROHM sals offic. ROHM shall hav no rsponsibility for any damags or losss rsulting non-complianc with any applicabl laws or rgulations. Whn providing our Products and tchnologis containd in this documnt to othr countris, you must abid by th procdurs and provisions stipulatd in all applicabl xport laws and rgulations, including without limitation th US xport dministration Rgulations and th Forign xchang and Forign Trad ct. 14) This documnt, in part or in whol, may not b rprintd or rproducd without prior consnt of ROHM. Thank you for your accssing to ROHM product informations. Mor dtail product informations and catalogs ar availabl, plas contact us. ROHM Customr Support Systm http:///contact/ 2014 ROHM Co., Ltd. ll rights rsrvd. R1102