SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested Benefits PD - 94184D IRL3713 IRL3713S IRL3713L HEXFET Power MOSFET V DSS R DS(on) max (mw) I D 30V 3.0@V GS = 10V 260A l Ultra-Low Gate Impedance l l Very Low R DS(on) at 4.5V V GS Fully Characterized Avalanche Voltage and Current TO-220AB IRL3713 D 2 Pak IRL3713S TO-262 IRL3713L Absolute Maximum Ratings Symbol Parameter Max Units V DS Drain-Source Voltage 30 V V GS Gate-to-Source Voltage ± 20 V I D @ T C = 25 C Continuous Drain Current, V GS @ 10V 260h I D @ T C = C Continuous Drain Current, V GS @ 10V 180h A I DM Pulsed Drain Current c 1040h P D @T C = 25 C Maximum Power Dissipation 330 P D @Tc = C Maximum Power Dissipation 170 W Linear Derating Factor 2.2 W/ C T J, T STG Junction and Storage Temperature Range -55 to 175 C Thermal Resistance Symbol Parameter Typ Max Units R θjc Junction-to-Case i 0.45 R qcs Case-to-Sink, Flat, Greased Surface f 0.50 R θja Junction-to-Ambient fi C/W 62 R θja Junction-to-Ambient (PCB Mount) gi 40 Notes through are on page 11 www.irf.com 1 11/12/03
Static @ T J = 25 C (unless otherwise specified) Symbol Parameter Min Typ Max Units V (BR)DSS Drain-to-Source Breakdown Voltage 30 V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.027 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 2.6 3.0 V GS = 10V, I D = 38A e mω 3.3 4.0 V GS = 4.5V, I D = 30A e V GS(th) Gate Threshold Voltage 1.0 2.5 V V DS = V GS, I D = 250µA 50 V DS = 30V, V GS = 0V I DSS Drain-to-Source Leakage Current 20 µa V DS = 24V, V GS = 0V V DS = 24V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 V GS = 20V na Gate-to-Source Reverse Leakage -200 V GS = -20V Dynamic @ T J = 25 C (unless otherwise specified) Symbol Parameter Min Typ Max Units gfs Forward Transconductance 76 S Conditions V GS = 0V, I D = 250µA Conditions V DS = 15V, I D = 30A Q g Total Gate Charge 75 110 I D = 30A Q gs Gate-to-Source Charge 24 nc V DS = 15V Q gd Gate-to-Drain ("Miller") Charge 37 V GS = 4.5V f Q OSS Output Gate Charge 61 92 V GS = 0V, V DS = 15V R G Gate Resistance 0.5 3.4 Ω t d(on) Turn-On Delay Time 16 V DD = 15V t r Rise Time 160 I D = 30A ns t d(off) Turn-Off Delay Time 40 R G = 1.8Ω t f Fall Time 57 V GS = 4.5V e C iss Input Capacitance 5890 V GS = 0V C oss Output Capacitance 3130 pf V DS = 15V C rss Reverse Transfer Capacitance 630 ƒ = 1.0MHz Avalanche Characteristics Symbol Parameter Typ Max Units E AS Single Pulse Avalanche Energyd 1530 mj I AR Avalanche CurrentÃc 46 A Diode Characteristics Symbol Parameter Min Typ Max Units Conditions I S I SM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ãch 260 h 1040 h A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage 0.80 1.3 T J = 25 C, I S = 30A, V GS = 0V e V 0.68 T J = 125 C, I S = 30A, V GS = 0V e t rr Reverse Recovery Time 75 110 ns T J = 25 C, I F = 30A, V R = 0V Q rr Reverse Recovery Charge 140 210 nc di/dt = A/µs e t rr Reverse Recovery Time 78 120 ns T J = 125 C, I F = 30A, V R = 20V Q rr Reverse Recovery Charge 160 240 nc di/dt = A/µs e 2 www.irf.com
I D, Drain-to-Source Current (A) 10 1 VGS TOP 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM 2.5V 2.5V I D, Drain-to-Source Current (A) 10 VGS TOP 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM2.5V 2.5V 20µs PULSE WIDTH T J = 25 C 0.1 0.1 1 10 V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH 1 T J = 175 C 0.1 1 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 10 T J = 175 C T J = 25 C V DS= 15V 20µs PULSE WIDTH 1 2.5 3.0 3.5 4.0 4.5 V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = 260A 1.5 1.0 0.5 V GS = 10V 0.0-60 -40-20 0 20 40 60 80 120 140 160 180 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance(pF) IRL3713/S/L 00 0 V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss Coss Crss V GS, Gate-to-Source Voltage (V) 14 12 10 8 6 4 2 I D = 30A V DS = 24V V DS = 15V V DS = 6V 1 10 V DS, Drain-to-Source Voltage (V) 0 0 40 80 120 160 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) 10 1 T J = 175 C T J = 25 C V GS = 0 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 0 OPERATION IN THIS AREA LIMITED BY R DS(on) 10us us 1ms TC = 25 C TJ = 175 C 10ms Single Pulse 10 1 10 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
300 LIMITED BY PACKAGE V DS R D 250 V GS D.U.T. R G I D, Drain Current (A) 200 150 10V Pulse Width 1 µs Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit - V DD 50 V DS 90% 0 25 50 75 125 150 175 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% V GS t d(on) t r t d(off) t f Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thjc ) 0.1 0.01 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 0.001 2. Peak T J = P DM x Z thjc TC 0.00001 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
R G V DS 20V V GS tp Fig 12a. Unclamped Inductive Test Circuit tp L D.U.T IAS 0.01Ω V (BR)DSS 15V DRIVER - V DD A E AS, Single Pulse Avalanche Energy (mj) 3000 2500 2000 1500 500 TOP BOTTOM I D 30A 38A 46A 0 25 50 75 125 150 175 Starting T, Junction Temperature ( J C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 10 V Q GS Q G Q GD 12V.2µF 50KΩ.3µF D.U.T. V - DS V G V GS 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 www.irf.com
Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =10V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET Power MOSFETs www.irf.com 7
TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) - A - 4.69 (.185) 4.20 (.165) - B - 1.32 (.052) 1.22 (.048) 15.24 (.600) 14.84 (.584) 4 6.47 (.255) 6.10 (.240) 1 2 3 1.15 (.045) MIN LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 1.15 (.045) 2.54 (.) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 2.92 (.115) 2.64 (.104) 0.55 (.022) 0.46 (.018) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO PART NUMBER LOT CODE DATE CODE 8 www.irf.com
D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information For GB Production THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO AS S EMBL Y LOT CODE F530S PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 02 LINE L THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO F530S PART NUMBER LOT CODE DATE CODE www.irf.com 9
TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLEC- TOR TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 10 www.irf.com
D 2 Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065) 10.90 (.429) 10.70 (.421) 11.60 (.457) 11.40 (.449) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 1.4mH R G = 25Ω, I AS = 46A,V GS =10V ƒ Pulse width 400µs; duty cycle 2%. This is only applied to TO-220A package This is applied to D 2 Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. R θ is measured at T J approximately 90 C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/03 www.irf.com 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/