Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Parameter I D @ T C = 25 C Continuous Drain Current, V GS @ V (Silicon Limited) I D @ T C = 0 C Continuous Drain Current, V GS @ V I D @ T C = 25 C Continuous Drain Current, V GS @ V (Package Limited) Pulsed Drain Current c PD - 95811 IRFR2905Z IRFU2905Z HEXFET Power MOSFET V DSS = 55V R DS(on) = 14.5mΩ I D = 42A HEXFET is a registered trademark of International Rectifier. www.irf.com 1 G D S D-Pak IRFR2905Z I-Pak IRFU2905Z Units I DM 240 P D @T C = 25 C Power Dissipation 1 W Linear Derating Factor 0.72 W/ C V GS Gate-to-Source Voltage ± 20 V E AS (Thermally limited) Single Pulse Avalanche Energyd 55 mj E AS (Tested ) Single Pulse Avalanche Energy Tested Value h 82 I AR Avalanche Currentc See Fig.12a, 12b, 15, 16 A E AR Repetitive Avalanche Energy g mj T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (1.6mm from case ) lbfyin (1.1Nym) Mounting Torque, 6-32 or M3 screw Thermal Resistance Max. 59 42 Parameter Typ. Max. Units R θjc Junction-to-Case j 1.38 R θja Junction-to-Ambient (PCB mount) ij 40 C/W R θja Junction-to-Ambient j 1 42 A 11/24/03
IRFR/U2905Z Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 55 V Conditions V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.053 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 11.1 14.5 mω V GS = V, I D = 36A e V GS(th) Gate Threshold Voltage 2.0 4.0 V V DS = V GS, I D = 250µA gfs Forward Transconductance 20 S V DS = 25V, I D = 36A I DSS Drain-to-Source Leakage Current 20 µa V DS = 55V, V GS = 0V 250 V DS = 55V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 na V GS = 20V Gate-to-Source Reverse Leakage -200 V GS = -20V Q g Total Gate Charge 29 44 I D = 36A Q gs Gate-to-Source Charge 7.7 nc V DS = 44V Q gd Gate-to-Drain ("Miller") Charge 12 V GS = V e R G Gate Input Resistance 1.3 Ω f = 1MHz, open drain t d(on) Turn-On Delay Time 14 V DD = 28V t r Rise Time 66 I D = 36A t d(off) Turn-Off Delay Time 31 ns R G = 15 Ω t f Fall Time 35 V GS = V e L D Internal Drain Inductance 4.5 Between lead, D nh 6mm (0.25in.) L S Internal Source Inductance 7.5 from package G and center of die contact S C iss Input Capacitance 1380 V GS = 0V C oss Output Capacitance 240 V DS = 25V C rss Reverse Transfer Capacitance 120 pf ƒ = 1.0MHz C oss Output Capacitance 820 V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance 190 V GS = 0V, V DS = 44V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 300 V GS = 0V, V DS = 0V to 44V f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 36 MOSFET symbol (Body Diode) A showing the I SM Pulsed Source Current 240 integral reverse (Body Diode)Ãc p-n junction diode. V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 36A, V GS = 0V e t rr Reverse Recovery Time 23 35 ns T J = 25 C, I F = 36A, V DD = 28V Q rr Reverse Recovery Charge 16 24 nc di/dt = 0A/µs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSLD) 2 www.irf.com
I D, Drain-to-Source Current (Α) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) Gfs, Forward Transconductance (S) IRFR/U2905Z 00 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 00 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 4.5V 4.5V 60µs PULSE WIDTH Tj = 25 C 0.1 0.1 1 0 V DS, Drain-to-Source Voltage (V) 1 60µs PULSE WIDTH Tj = 175 C 0.1 0 1 0 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 00.0 50 T J = 175 C 40 0.0 T J = 175 C 30 T J = 25 C.0 T J = 25 C 20 V DS = 25V 60µs PULSE WIDTH 1.0 4.0 5.0 6.0 7.0 8.0 9.0.0 V GS, Gate-to-Source Voltage (V) 0 V DS = 15V 380µs PULSE WIDTH 0 20 30 40 50 I D, Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com 3
C, Capacitance (pf) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) IRFR/U2905Z 2400 2000 1600 V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss 20 16 12 I D = 36A V DS = 44V VDS= 28V VDS= 11V 1200 8 800 400 0 Coss Crss 1 0 V DS, Drain-to-Source Voltage (V) 4 0 FOR TEST CIRCUIT SEE FIGURE 13 0 20 30 40 50 Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 00.0 00 OPERATION IN THIS AREA LIMITED BY R DS (on) 0.0 T J = 175 C 0.0 0µsec T J = 25 C 1.0 V GS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 V SD, Source-toDrain Voltage (V) 1 0.1 Tc = 25 C Tj = 175 C Single Pulse 1msec msec 1 0 00 V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) IRFR/U2905Z 70 60 LIMITED BY PACKAGE 2.0 I D = 36A V GS = V 50 40 1.5 30 20 1.0 0 25 50 75 0 125 150 175 T C, Case Temperature ( C) 0.5-60 -40-20 0 20 40 60 80 0 120 140 160 180 T J, Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig. Normalized On-Resistance Vs. Temperature 1 D = 0.50 Thermal Response ( Z thjc ) 0.1 0.01 0.001 0.20 0. 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 2 R 3 R 1 R 2 R 3 τ J τ J τ 1 τ τ 2 τ 3 1 τ 2 τ 3 Ci= τi/ri Ci i/ri 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) 0.4129 0.0015 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc Tc Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Ri ( C/W) τi (sec) 0.3962 0.00012 0.5693 0.00045 www.irf.com 5 τ C τ
V GS(th) Gate threshold Voltage (V) E AS, Single Pulse Avalanche Energy (mj) IRFR/U2905Z V DS L 15V DRIVER 240 200 I D TOP 36A 8.6A BOTTOM 4.8A 160 R G 20V V GS tp D.U.T IAS 0.01Ω - V DD A 120 Fig 12a. Unclamped Inductive Test Circuit 80 tp V (BR)DSS 40 0 25 50 75 0 125 150 175 Starting T J, Junction Temperature ( C) I AS Fig 12b. Unclamped Inductive Waveforms Q G Fig 12c. Maximum Avalanche Energy Vs. Drain Current V Q GS Q GD 4.5 V G 4.0 Current Regulator Same Type as D.U.T. Charge Fig 13a. Basic Gate Charge Waveform 3.5 3.0 I D = 250µA 12V.2µF 50KΩ.3µF 2.5 V GS D.U.T. V - DS 2.0-75 -50-25 0 25 50 75 0 125 150 175 3mA T J, Temperature ( C ) I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6 www.irf.com
Avalanche Current (A) E AR, Avalanche Energy (mj) IRFR/U2905Z 00 0 Duty Cycle = Single Pulse 0.01 0.05 0. Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 60 50 40 30 20 0 TOP Single Pulse BOTTOM 1% Duty Cycle I D = 36A 25 50 75 0 125 150 175 Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-05 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 15, 16). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure 11) P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc Fig 16. Maximum Avalanche Energy I av = 2DT/ [1.3 BV Z th ] Vs. Temperature E AS (AR) = P D (ave) t av www.irf.com 7
IRFR/U2905Z - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V DS R D R G V GS D.U.T. - V DD V Pulse Width 1 µs Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit V DS 90% % V GS t d(on) t r t d(off) t f Fig 18b. Switching Time Waveforms 8 www.irf.com
IRFR/U2905Z D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 5.46 (.215) 5.21 (.205) 6.73 (.265) 6.35 (.250) - A - 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 4 1.02 (.040) 1.64 (.025) 1.52 (.060) 1.15 (.045) 2X 1.14 (.045) 0.76 (.030) 1 2 3 3X 6.22 (.245) 5.97 (.235) - B - 0.89 (.035) 0.64 (.025) 0.25 (.0) M A M B.42 (.4) 9.40 (.370) 6.45 (.245) 5.68 (.224) 0.51 (.020) MIN. 0.58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 2.28 (.090) 4.57 (.180) D-Pak (TO-252AA) Part Marking Information NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. 0.16 (.006). Notes: This part marking information applies to devices produced before 02/26/2001 EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 9U1P INT ERNATIONAL RECTIFIER LOGO IRFU120 016 9U 1P DATE CODE YEAR = 0 WE EK = 16 AS S E MBL Y LOT CODE Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" INT ERNATIONAL RECTIFIER LOGO AS S E MBL Y LOT CODE IRFU120 916A 12 34 PART NUMBER DATE CODE YEAR 9 = 1999 WEEK 16 LINE A www.irf.com 9
IRFR/U2905Z I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 5.46 (.215) 5.21 (.205) 1.52 (.060) 1.15 (.045) 6.73 (.265) 6.35 (.250) - A - 4 6.22 (.245) 5.97 (.235) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 1 2 3 - B - 2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. 0.16 (.006). 3X 1.14 (.045) 0.76 (.030) 2.28 (.090) 2X 3X 0.89 (.035) 0.64 (.025) 0.25 (.0) M A M B 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) I-Pak (TO-251AA) Part Marking Information Notes : This part marking information applies to devices produced before 02/26/2001 EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 9U1P INTERNATIONAL RECTIFIER LOGO IRFU120 016 9U 1P DATE CODE YEAR = 0 WE EK = 16 ASSEMBLY LOT CODE Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN THE ASSEMBLY LINE "A" INTERNATIONAL RECTIFIER LOGO AS S E MB LY LOT CODE IRFU120 919A 56 78 PART NUMBER DATE CODE YEAR 9 = 1999 WEEK 19 LINE A www.irf.com
IRFR/U2905Z D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO EIA-481. 16 mm Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by T Jmax, starting T J = 25 C, L = 0.08mH R G = 25Ω, I AS = 36A, V GS =V. Part not recommended for use above this value. ƒ Pulse width 1.0ms; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Limited by T Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 0% tested to this value in production. When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 ˆ R θ is measured at T J approximately 90 C Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q1] market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.11/03 www.irf.com 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/