C4D112D Silicon Carbide Schottky Diode Z-Rec Rectifier Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation emperature-independent Switching Extremely Fast Switching Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without hermal Runaway Package O-247-3 RM = 12 V ( =135) = 18 ** Q c = 54 nc ** pplications Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages C/DC converters Maximum Ratings (=25 C unless otherwise specified) Part Number Package Marking C4D112D O-247-3 C4D112 Symbol Parameter Value Unit est Conditions Note RM Repetitive Peak Reverse Voltage 12 V SM Surge Peak Reverse Voltage 13 V DC Peak Reverse Voltage 12 V Continuous Forward Current (Per Leg/Device) 19/38 9/18 5/1 =25 =135 =16 Fig. 3 RM Repetitive Peak Forward Surge Current 26* 18* =1 ms, Half Sine Pulse =11, t P =1 ms, Half Sine Pulse SM Non-Repetitive Forward Surge Current 46* 36* =1 ms, Half Sine Pulse =11, t P =1 ms, Half Sine Pulse Fig. 8,Max Non-Repetitive Peak Forward Current 4* 32* =1 ms, Pulse =11, t P =1 ms, Pulse Fig. 8 P tot Power Dissipation(Per Leg/Device) 93/187 4/81 W =25 =11 Fig. 4 dv/dt Diode dv/dt ruggedness 2 V/ns =-65V i 2 dt i 2 t value 1.6* 6.5* 2 s =1 ms =11, t P =1 ms Operating Junction Range -55 to +175 stg Storage emperature Range -55 to +135 O-247 Mounting orque * Per Leg, ** Per Device 1 8.8 Nm lbf-in M3 Screw 6-32 Screw 1 C4D112D Rev. H, 9-216
Electrical Characteristics (Per Leg) Symbol Parameter yp. Max. Unit est Conditions Note V F I R Forward Voltage Reverse Current 1.4 1.9 2 4 1.8 3 15 3 Q C otal Capacitive Charge 27 nc C otal Capacitance 39 27 2 V μ pf = 5 =25 C = 5 = 12 V =25 C = 12 V = 8 V, = 5 di/dt = 2 /μs = V,, f = 1 MHz = 4 V, = 25, f = 1 MHz = 8 V, = 25, f = 1 MHz Fig. 1 Fig. 2 Fig. 5 Fig. 6 E C Capacitance Stored Energy 8. μj = 8 V Fig. 7 Note:his is a majority carrier diode, so there is no reverse recovery charge. hermal Characteristics Symbol Parameter yp. Unit Note R θjc hermal Resistance from Junction to Case * Per Leg, ** Per Device 1.6*.8** C/W Fig. 9 ypical Performance (Per Leg) 1 9 8 7 =-55 C = 75 C =125 C 1 9 8 7 Current I () F () 6 5 4 3 2 Current I (µ) R (μ) 6 5 4 3 2 =-55 C = 75 C =125 C 1 1.5 1 1.5 2 2.5 3 3.5 5 1 15 2 Voltage V F Voltage Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D112D Rev. H, 9-216
ypical Performance (Per Leg) 6 1. (peak) () 55 5 45 4 35 3 25 2 15 1 5 1% Duty 2% Duty 3% Duty 5% Duty 7% Duty DC P ot (W) 9. 8. 7. 6. 5. 4. 3. 2. 1. 25 5 75 1 125 15 175. 25 5 75 1 125 15 175 Figure 3. Current Derating Figure 4. Power Derating 35 45 3 4 35 25 3 Q c (nc) 2 15 C (pf) 25 2 1 15 1 5 5 2 4 6 8 1.1 1 1 1 1 Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3 C4D112D Rev. H, 9-216
ypical Performance 14. 1 12. E C (mj) E C Capacitive Energy (uj) 1. 8.8 6.6 4.4 SM IFSM() 1 _initial _initial = 11 C 2.2. 2 4 6 8 1 Reverse V Voltage R Figure 7. ypical Capacitance Stored Energy, per leg 1 1E-5 1.E-5 1E-4 1.E-4 1E-3 1.E-3 1E-2 1.E-2 tp(s) t p (s) Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform), per leg 1 Junction hermal o Case Resistance Impedance, (/W) Z thjc ( o C/W) 1E-3 1E-3.5.3.1.5.2.1 SinglePulse 1E-3 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 ime, (Sec) t p (s) Figure 9. Device ransient hermal Impedance 4 C4D112D Rev. H, 9-216
Package Dimensions Package O-247-3 e Inches Millimeters POS Min Max Min Max.19.25 4.83 5.21 1.9.1 2.29 2.54 2.75.85 1.91 2.16 b.42.52 1.7 1.33 b1.75.95 1.91 2.41 b3.113.133 2.87 3.38 c.22.27.55.68 D.819.831 2.8 21.1 D1.64.695 16.25 17.65 D2.37.49.95 1.25 E.62.635 15.75 16.13 E1.516.557 13.1 14.15 E2.145.21 3.68 5.1 E3.39.75 1. 1.9 E4.487.529 12.38 13.43 e.214 BSC 5.44 BSC L.78.8 19.81 2.32 L1.161.173 4.1 4.4 N 3 ØP.138.144 3.51 3.65 Q.216.236 5.49 6. S.238.248 6.4 6.3 17.5 REF W 3.5 REF X 4 REF Recommended Solder Pad Layout Part Number Package Marking C4D112D O-247-3 C4D112 all units are in inches O-247-3 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C4D112D Rev. H, 9-216
Diode Model Vf = V + If * R V =.96 + ( j * -1.22*1-3 ) R =.8 + ( j * 8.5*1-4 ) Note: j is diode junction temperature in degrees Celsius valid from 25 C to 175 C Note: j = Diode Junction emperature In Degrees Celsius, Notes RoHS Compliance he levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. RECh Compliance RECh substances of high concern (SVHCs) information is available for this product. Since the European Chemical gency (ECH) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date RECh SVHC Declaration. RECh banned substance information (RECh rticle 67) is also available upon request. his product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/power/products#sicschottkydiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 SiC MOSFE and diode reference designs: http://go.pardot.com/l/11562/215-7-31/349i Copyright 216 Cree, Inc. ll rights reserved. he information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 US el: +1.919.313.53 Fax: +1.919.313.5451 www.cree.com/power 6 C4D112 Rev. H, 9-216