C3M659J Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode V DS I D @ 25 C R DS(on) 9 V 35 A 65 mω Features New C3M SiC MOSFET technology New low impedance package with driver source pin High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (6pF) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Increase power density Increase system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Package TAB Drain 1 2 3 4 5 6 7 G DS S S S S S Part Number Gate (Pin 1) C3M659J Driver Source (Pin 2) Drain (TAB) Power Source (Pin 3,4,5,6,7) Package TO-263-7 Maximum Ratings (T C = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note V DSmax Drain - Source Voltage 9 V V GS = V, I D = 1 μa V GSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note. 1 V GSop Gate - Source Voltage (static) -4/+15 V Static Note. 2 I D Continuous Drain Current 35, T C = 25 C Fig. 19 A 22, T C = 1 C I D(pulse) Pulsed Drain Current 9 A Pulse width t P limited by T jmax Fig. 22 E AS Avalanche energy, Single pulse 11 mj I D = 22A, V DD = 5V P D Power Dissipation 113 W T C =25 C, T J = 15 C Fig. 2 T J, T stg Operating Junction and Storage Temperature -55 to +15 C T L Solder Temperature 26 C 1.6mm (.63 ) from case for 1s Note (1): When using MOSFET Body Diode V GSmax = -4V/+19V Note (2): MOSFET can also safely operate at /+15 V 1 C3M659J Rev. C, 1-218
Electrical Characteristics (T C = 25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain-Source Breakdown Voltage 9 V V GS = V, I D = 1 μa V GS(th) Gate Threshold Voltage 1.8 2.1 3.5 V V DS = V GS, I D = 5 ma 1.6 V V DS = V GS, I D = 5 ma, T J = 15ºC I DSS Zero Gate Voltage Drain Current 1 1 μa V DS = 9 V, V GS = V I GSS Gate-Source Leakage Current 1 25 na, V DS = V R DS(on) g fs Drain-Source On-State Resistance Transconductance Fig. 11 65 78, I D = 2 A Fig. 4, mω 9, I D = 2A, T J = 15ºC 5, 6 13.6 V DS= 15 V, I DS= 2 A S 11.6 V DS= 15 V, I DS= 2 A, T J = 15ºC C iss Input Capacitance 66 pf V GS = V, V DS = 6 V Fig. 17, C oss Output Capacitance 6 18 f = 1 MHz C rss Reverse Transfer Capacitance 4. VAC = 25 mv E oss C oss Stored Energy 16 μj Fig. 16 Fig. 7 E ON Turn-On Switching Energy (Body Diode FWD) 39 E OFF Turn Off Switching Energy (Body Diode FWD) 17 μj V DS = 4 V, V GS = -4 V/15 V, I D = 2A, R G(ext) = 2.5Ω, L= 77 μh, T J = 15ºC Fig. 26, 3 Note. 3 t d(on) Turn-On Delay Time 9 t r Rise Time 1 t d(off) Turn-Off Delay Time 16 t f Fall Time 6 ns V DD = 4 V, V GS = -4 V/15 V I D = 2 A, R G(ext) = 2.5 Ω, Timing relative to V DS Inductive load R G(int) Internal Gate Resistance 4.7 Ω f = 1 MHz, V AC = 25 mv Q gs Gate to Source Charge 7.5 Q gd Gate to Drain Charge 12 Q g Total Gate Charge 3.4 nc V DS = 4 V, V GS = -4 V/15 V I D = 2 A Per IEC6747-8-4 pg 21 Fig. 27 Fig. 12 Reverse Diode Characteristics (T C = 25 C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note V SD Diode Forward Voltage 4.8 V V GS = -4 V, I SD = 1 A 4.4 V V GS = -4 V, I SD = 1 A, T J = 15 C Fig. 8, 9, 1 I S Continuous Diode Forward Current 22 A V GS = -4 V Note 1 I S, pulse Diode pulse Current 9 A V GS = -4 V, pulse width t P limited by T jmax Note 1 t rr Reverse Recovery time 12 ns Q rr Reverse Recovery Charge 245 nc I rrm Peak Reverse Recovery Current 29 A Thermal Characteristics V GS = -4 V, I SD = 2 A, V R = 5 V dif/dt = 41 A/µs, T J = 15 C Note 1 Symbol Parameter Max. Unit Test Conditions Note R θjc Thermal Resistance from Junction to Case 1.1 R θja Thermal Resistance From Junction to Ambient 4 C/W Fig. 21 Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 C3M659J Rev. C, 1-218
Typical Performance 8 7 T J = -55 C tp < 2 µs V GS = 13 V 8 7 tp < 2 µs V GS = 13 V 6 5 4 3 2 V GS = 11 V V GS = 9 V 6 5 4 3 2 V GS = 11 V V GS = 9 V V GS = 7 V 1 V GS = 7 V 1. 2.5 5. 7.5 1. 12.5 15.. 2.5 5. 7.5 1. 12.5 15. Figure 1. Output Characteristics T J = -55 ºC Figure 2. Output Characteristics T J = 25 ºC 8 7 6 5 4 3 2 T J = 15 C tp < 2 µs V GS = 13 V V GS = 11 V V GS = 9 V V GS = 7 V On Resistance, R DS On (P.U.) 2. 1.8 1.6 1.4 1.2 1..8.6.4 I DS = 2 A t p < 2 µs 1.2. 2.5 5. 7.5 1. 12.5 15.. -5-25 25 5 75 1 125 15 Junction Temperature, T J ( C) Figure 3. Output Characteristics T J = 15 ºC Figure 4. Normalized On-Resistance vs. Temperature 12 1 t p < 2 µs T J = 15 C 14 12 I DS = 2 A t p < 2 µs On Resistance, R DS On (Ohms) 8 6 4 2 T J = -55 C On Resistance, R DS On (mohms) 1 8 6 4 2 V GS = 13 V V GS = 11 V 1 2 3 4 5 6 Figure 5. On-Resistance vs. Drain Current For Various Temperatures -5-25 25 5 75 1 125 15 Junction Temperature, T J ( C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 3 C3M659J Rev. C, 1-218
Typical Performance 5 4 3 2 1 V DS = 2 V tp < 2 µs T J = 15 C T J = -55 C -9-8 -7-6 -5-4 -3-2 -1 V GS = -4 V V GS = V V GS = -2 V -1-2 -3-4 -5-6 2 4 6 8 1 Gate-Source Voltage, V GS (V) T J = -55 C t p < 2 µs -7-8 Figure 7. Transfer Characteristic for Various Junction Temperatures Figure 8. Body Diode Characteristic at -55 ºC -9-8 -7-6 -5-4 -3-2 -1-1 -9-8 -7-6 -5-4 -3-2 -1 V GS = -4 V V GS = -2 V V GS = V -1-2 -3-4 -5 V GS = -4 V V GS = -2 V V GS = V -1-2 -3-4 -5-6 -6 T J = 25 C t p < 2 µs -7-8 T J = 15 C t p < 2 µs -7-8 Figure 9. Body Diode Characteristic at 25 ºC Figure 1. Body Diode Characteristic at 15 ºC Threshold Voltage, V th (V) 3. 2.5 2. 1.5 1..5 Conditons V GS = V DS I DS = 5 ma Gate-Source Voltage, V GS (V) 16 12 8 4 I DS = 2 A I GS = 1 ma V DS = 4 V. -5-25 25 5 75 1 125 15 Junction Temperature T J ( C) -4 5 1 15 2 25 3 35 Gate Charge, Q G (nc) Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics 4 C3M659J Rev. C, 1-218
Typical Performance -8-7 -6-5 -4-3 -2-1 -8-7 -6-5 -4-3 -2-1 V GS = V V GS = 5 V V GS = 1 V -1-2 -3-4 -5 V GS = V V GS = 5 V V GS = 1 V -1-2 -3-4 -5-6 -6 T J = -55 C t p < 2 µs -7-8 t p < 2 µs -7-8 Figure 13. 3rd Quadrant Characteristic at -55 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC -8-7 -6-5 -4-3 -2-1 3 V GS = V V GS = 5 V V GS = 1 V -1-2 -3-4 -5 Stored Energy, E OSS (µj) 25 2 15 1-6 5 T J = 15 C t p < 2 µs -7-8 1 2 3 4 5 6 7 8 9 1 Drain to Source Voltage, V DS (V) Figure 15. 3rd Quadrant Characteristic at 15 ºC Figure 16. Output Capacitor Stored Energy 1 1 C iss V AC = 25 mv f = 1 MHz 1 1 C iss V AC = 25 mv f = 1 MHz Capacitance (pf) 1 C oss Capacitance (pf) 1 C oss 1 C rss 1 C rss 1 5 1 15 2 1 1 2 3 4 5 6 7 8 9 Figure 17. Capacitances vs. Drain-Source Voltage ( - 2V) Figure 18. Capacitances vs. Drain-Source Voltage ( - 9V) 5 C3M659J Rev. C, 1-218
Typical Performance Drain-Source Continous Current, I DS (DC) (A) 4 35 3 25 2 15 1 5 T J 15 C Maximum Dissipated Power, P tot (W) 12 1 8 6 4 2 T J 15 C -55-3 -5 2 45 7 95 12 145 Case Temperature, T C ( C) Figure 19. Continuous Drain Current Derating vs. Case Temperature -55-3 -5 2 45 7 95 12 145 Case Temperature, T C ( C) Figure 2. Maximum Power Dissipation Derating vs. Case Temperature 1. Junction To Case Impedance, Z thjc ( o C/W) 1 1E-3.5.3.1.5.2.1 SinglePulse 1E-3 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 Time, t p (s) 1. 1..1 Limited by R DS On 1 ms 1 µs T C = 25 C D =, Parameter: t p.1.1 1 1 1 1 1 ms 1 µs Figure 21. Transient Thermal Impedance (Junction - Case) Figure 22. Safe Operating Area 3 25 2 V DD = 6 V R G(ext) = 2.5 Ω V GS = -4V/+15 V FWD = C3M659J L = 77 μh E Total 15 125 1 V DD = 4 V R G(ext) = 2.5 Ω V GS = -4V/+15 V FWD = C3M659J L = 77 μh E Total Switching Loss (uj) 15 1 E On Switching Loss (uj) 75 5 E On E Off 5 E Off 25 1 2 3 4 5 Drain to Source Current, I DS (A) 1 2 3 4 5 Drain to Source Current, I DS (A) Figure 23. Clamped Inductive Switching Energy vs. Drain Current (V DD = 6V) Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V DD = 4V) 6 C3M659J Rev. C, 1-218
Typical Performance Switching Loss (uj) 25 2 15 1 V DD = 4 V I DS = 2 A V GS = -4V/+15 V FWD = C3M659J L = 77 μh E Total E On Switching Loss (uj) 1 8 6 4 E Total E On I DS = 2 A V DD = 4 V R G(ext) = 2.5 Ω V GS = -4V/+15 V FWD = C3M659J L = 77 μh 5 E Off 2 E Off 5 1 15 2 25 External Gate Resistor RG(ext) (Ohms) 25 5 75 1 125 15 175 Junction Temperature, T J ( C) Figure 25. Clamped Inductive Switching Energy vs. R G(ext) Figure 26. Clamped Inductive Switching Energy vs. Temperature Times (ns) 4 35 3 25 2 V DD = 4 V I DS = 2 A V GS = -4V/+15 V FWD = C3M659J L = 77 μh t d(off) t r 15 t d(on) 1 t f 5 5 1 15 2 25 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. R G(ext) Figure 28. Switching Times Definition 35 3 Conditons: V DD = 5 V Avalanche Current (A) 25 2 15 1 5 2 4 6 8 1 Time in Avalanche T AV (us) Figure 29. Single Avalanche SOA curve 7 C3M659J Rev. C, 1-218
Test Circuit Schematic R G Q 1 V DC V GS= - 4 V KS R G Q 2 KS Figure 3. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M659J Rev. C, 1-218
Package Dimensions TO-263-7 Package 7L D2PAK All Dimensions in Millimeters Dim Min typ Max A 4.3 4.435 4.57 A1..125.25 b.5.6.7 b2.6.8 1. c.33.49.65 C2 1.17 1.285 1.4 D 9.25 9.75 9.125 D1 4.7 4.8 4.9 E 1.13 1.18 1.23 E1 6.5 7.55 8.6 E2 6.778 7.223 7.665 e 1.27 H 15.43 16.178 17.313 L 2.324 2.512 2.7 L1.968 1.418 1.868 Ø 4 8 Ø1 4.5 5 5.5 9 C3M659J Rev. C, 1-218
Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/ EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power/tools-and-support Application Considerations for Silicon-Carbide MOSFETs: www.cree.com/power/tools-and-support Copyright 218 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: +1.919.313.53 Fax: +1.919.313.5451 www.cree.com/power 1 C3M659J Rev. C, 1-218