CMDY-A CMDY-A IC...A CES... Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9 8 CE E C E G GE 8 () -φ6. MOUNTING HOLES 8±. -M NUTS. (SCREWING DEPTH) 6 6 6 TAB #. t=. E G 9 +.. LABEL.. CE E C G E CIRCUIT DIAGRAM Feb. 9
CMDY-A ABSOLUTE MAXIMUM RATINGS (Tj = C, unless otherwise specified) Symbol CES GES IC ICM IE (Note ) IEM (Note ) PC (Note ) Tj Tstg iso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short DC, TC = 8 C * Pulse (Note ) Pulse (Note ) TC = C * Terminals to base plate, f = 6Hz, AC minute Main terminals M screw Mounting M6 screw Typical value Ratings ± ~ + ~ +. ~.. ~. Unit A A W C C rms N m g ELECTRICAL CHARACTERISTICS (Tj = C, unless otherwise specified) * * Symbol Parameter Test conditions ICES Collector cutoff current Gate-emitter threshold CE = CES, GE = GE(th) voltage IC = ma, CE = IGES Gate leakage current ±GE = GES, CE = Collector-emitter saturation CE(sat) voltage IC = A, GE = Cies Input capacitance CE = Coes Output capacitance GE = Cres Reverse transfer capacitance QG Total gate charge, IC = A, GE = td(on) Turn-on delay time tr Turn-on rise time, IC = A td(off) Turn-off delay time GE = ± tf Turn-off fall time, trr (Note ) Reverse recovery time IE = A Qrr (Note ) Reverse recovery charge EC(Note ) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Thermal resistance Rth(c-f) Contact thermal resistance RG External gate resistance : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. : Typical value is measured by using thermally conductive grease of λ =.9[W/(m K)]. Tj = C Tj = C IE = A, GE = IGBT part (/ module) * FWDi part (/ module) * Case to heat sink, Thermal compound Applied (/ module) *,* Note. IE, EC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.. Junction temperature (Tj) should not increase beyond C. Min..6 Limits Typ... 9.. Max....68.8.9. Unit ma 6 8 µa nf nc ns ns µc K/W Ω Feb. 9
CMDY-A PERFORMANCE CURES OUTPUT CHARACTERISTICS GE = Tj = C 9 6 8 COLLECTOR-EMITTER OLTAGE CE () COLLECTOR-EMITTER SATURATION OLTAGE CE (sat) () COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS GE = Tj = C Tj = C COLLECTOR-EMITTER SATURATION OLTAGE CE (sat) () 8 6 COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS Tj = C IC = A IC = A IC = 8A 6 8 6 8 FREE-WHEEL DIODE FORWARD CHARACTERISTICS Tj = C Tj = C GATE-EMITTER OLTAGE GE () EMITTER-COLLECTOR OLTAGE EC () CAPACITANCE Cies, Coes, Cres (nf) CAPACITANCE CE CHARACTERISTICS Cies Coes Cres GE = SWITCHING TIME (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS td(off) tf td(on) tr GE = ± Tj = C COLLECTOR-EMITTER OLTAGE CE () Feb. 9
CMDY-A REERSE RECOERY TIME trr (ns) REERSE RECOERY CURRENT lrr (A) REERSE RECOERY CHARACTERISTICS OF FREE-WHEEL DIODE GE = ± Tj = C Irr trr NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j c ) (ratio) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) Single Pulse TC = C Under the chip IGBT part: Per unit base = Rth(j c) =.9K/W FWDi part: Per unit base = Rth(j c) =.K/W TIME (s) SWITCHING LOSS (mj/pulse) SWITCHING LOSS vs. COLLECTOR CURRENT GE = ± Tj = C Esw(off) Esw(on) SWITCHING LOSS (mj/pulse) SWITCHING LOSS vs. GATE RESISTANCE Esw(on) Esw(off) GE = ± IC = A Tj = C GATE RESISTANCE RG (Ω) RECOERY LOSS (mj/pulse) RECOERY LOSS vs. IE GE = ± Tj = C Err RECOERY LOSS (mj/pulse) RECOERY LOSS vs. GATE RESISTANCE GE = ± IE = A Tj = C Err GATE RESISTANCE RG (Ω) Feb. 9
CMDY-A GATE-EMITTER OLTAGE GE () GATE CHARGE CHARACTERISTICS IC = A CC = 6 8 6 8 GATE CHARGE QG (nc) Feb. 9