IRF961, SiHF961 Power MOSFET PRODUCT SUMMARY (V) 2 R DS(on) (Ω) = 1 V 3. Q g (Max.) (nc) 11 Q gs (nc) 7. Q gd (nc) 4. Configuration Single TO22 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel MOSFET FEATURES Dynamic dv/dt Rating PChannel Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)free Available Available RoHS* COMPLIANT DESCRIPTION The Power MOSFETs technology is the key to Vishay s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low onstate resistance combined with high transconductance and extreme device ruggedness. The TO22 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately W. The low thermal resistance and low package cost of the TO22 contribute to its wide acceptance throughout the industry. TO22 IRF961PbF SiHF961E3 IRF961 SiHF961 ABSOLUTE MAXIMUM RATINGS T C = 2 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 2 V GateSource Voltage ± 2 Continuous Drain Current at 1 V T C = 2 1.8 I D T C = 1 1. A Pulsed Drain Current a I DM 7. Linear Derating Factor.16 W/ C Maximum Power Dissipation T C = 2 C P D 2 W Inductive Current, Clamp I LM 7. A Peak Diode Recovery dv/dt c dv/dt. V/ns Operating Junction and Storage Temperature Range, T stg to 1 Soldering Recommendations (Peak Temperature) for 1 s 3 d C Mounting Torque 632 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Not applicable. c. I SD 1.8 A, di/dt 7 A/µs,, 1 C. d. 1.6 mm from case. 1 lbf in 1.1 N m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 918 www.vishay.com S946Rev. A, 19Jan9 1
IRF961, SiHF961 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 62 CasetoSink, Flat, Greased Surface R thcs. C/W Maximum JunctiontoCase (Drain) R thjc 6.4 SPECIFICATIONS = 2 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage = V, I D = 2 µa 2 V Temperature Coefficient Δ / Reference to 2 C, I D = 1 ma.23 V/ C GateSource Threshold Voltage (th) =, I D = 2 µa 2. 4. V GateSource Leakage I GSS = ± 2 V ± 1 na = 2 V, = V 1 Zero Gate Voltage Drain Current I DSS = 16 V, = V, = 12 C µa DrainSource OnState Resistance R DS(on) = 1 V I D =.9 A b 3. Ω Forward Transconductance g fs = V, I D =.9 A b.9 S Dynamic Input Capacitance C iss = V, 17 Output Capacitance C oss = 2 V, pf Reverse Transfer Capacitance C rss f = 1. MHz, see fig. 1 1 Total Gate Charge Q g 11 GateSource Charge Q gs I = 1 V D = 3. A, = 16 V, see fig. 11 and 18 b 7. nc GateDrain Charge Q gd 4. TurnOn Delay Time t d(on) 8. Rise Time t r = 1 V, I D =.9 A, 1 TurnOff Delay Time t d(off) R G = Ω, R D = 11 Ω, see fig. 17 b 1 ns Fall Time t f 8. Between lead, D Internal Drain Inductance L D 4. 6 mm (.2") from package and center of nh G Internal Source Inductance L S die contact 7. S DrainSource Body Diode Characteristics MOSFET symbol Continuous SourceDrain Diode Current I S showing the 1.8 D integral reverse G Pulsed Diode Forward Current a I SM p n junction diode 7. S A Body Diode Voltage V SD = 2 C, I S = 1.8 A, = V b.8 V Body Diode Reverse t rr 24 36 ns Recovery Time = 2 C, I F = 1.8 A, di/dt = 1 A/µs b Body Diode Reverse Recovery Charge Q rr 1.7 2.6 µc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Pulse width 3 µs; duty cycle 2 %. www.vishay.com Document Number: 918 2 S946Rev. A, 19Jan9
Thermal Impedence (Per Unit) IRF961, SiHF961 TYPICAL CHARACTERISTICS 2 C, unless otherwise noted 2.4 = 1, 9, 8, 7 V 1.92 1.44 6 V.96 V.48 8 µs Pulse Test 4 V. 1 2 3 4 918_1, DraintoSource Voltage (V) Fig. 1 Typical Output Characteristics 918_3 2.4 = 1, 9, 8 V 7 V 1.92 1.44 6 V.96.48 V 8 µs Pulse Test 4 V. 2 4 6 8 1, DraintoSource Voltage (V) Fig. 3 Typical Saturation Characteristics 918_2 2.4 1.92 1.44.96.48 = C = 2 C = 12 C 8 µs Pulse Test > I D(on) x R DS(on) max.. 2 4 6 8 1, GatetoSource Voltage (V) Fig. 2 Typical Transfer Characteristics Negative 918_4 1 2 2 1 2 1 2.1 2 1 1 Operation in this area limited by R DS(on) T C = 2 C = 1 C Single Pulse 2 1 µs 1 ms 1 ms 1 2 2 1 3 Negative, DraintoSource Voltage (V) Fig. 4 Maximum Safe Operating Area Z thjc (t)/r thjc, Normalized Effective Transient 918_ 2. 1...2 D =..2.1.1 t 1. t 2. Notes:.2 Single Pulse (Transient 1. Duty Factor, D = t 1 /t 2.2.1 Thermal Impedence) 2. Per Unit Base = R thjc = 6.4 C/W 3. M T C = P DM Z thjc (t).1 1 2 1 4 2 1 3 2 1 2 2 2 2.1 1. 1 t 1, Square Wave Pulse Duration (s) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase vs. Pulse Duration P DM Document Number: 918 www.vishay.com S946Rev. A, 19Jan9 3
IRF961, SiHF961 g fs,transconductance (S) 918_6 2. 1.6 1.2.8.4. 8 µs Pulse Test > I D(on) x R DS(on) max..48.96 1.44 1.92 2.4 = C = 2 C = 12 C Fig. 6 Typical Transconductance vs. Drain Current R DS(on), DraintoSource On Resistance (Normalized) 2. 2. 1. 1.. I D =.6 A = 1 V. 4 4 8 12 16 918_9, Junction Temperature ( C) Fig. 9 Normalized OnResistance vs. Temperature 1.. 2. 1...2 = 1 C = 2 C C, Capacitance (pf) 4 3 2 1 C iss C oss C rss = V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gs, C gd C gs C gd C gs C gd 918_7.1 2. 3.2 4.4.6 6.8 V SD, SourcetoDrain Voltage (V) 8. Fig. 7 Typical SourceDrain Diode Forward Voltage 1 2 3 4 918_1, DraintoSource Voltage (V) Fig. 1 Typical Capacitance vs. DraintoSource Voltage BS, DraintoSource Breakdown Voltage (Normalized) 1.2 1.1 1..9.8.7 4 4 8 12 16 918_8, Junction Temperature ( C) Fig. 8 Breakdown Voltage vs. Temperature Negative, GatetoSource Voltage (V) 918_11 2 16 12 8 4 I D = 1.8 A = 4 V = 6 V = 1 V 2 4 6 8 Q G, Total Gate Charge (nc) For test circuit see figure 18 Fig. 11 Typical Gate Charge vs. GatetoSource Voltage www.vishay.com Document Number: 918 4 S946Rev. A, 19Jan9
IRF961, SiHF961 7 RDS(on) measured with current pulse of 2. R DS(on), DraintoSource On Resistance (Ω) 6 4 3 2 1 2. µs duration. Initial = 2 C. (Heating effect of 2. µs pulse is minimal.) = 1 V = 2 V Negative 1.6 1.2.8.4 1 2 3 4 6 7. 2 7 1 12 1 918_12 918_13 T C, Case Temperature ( C) Fig. 12 Typical OnResistance vs. Drain Current Fig. 13 Maximum Drain Current vs. Case Temperature 2 P D, Power Dissipation (W) 1 1 918_14 2 4 6 8 1 12 T C, Case Temperature ( C) 14 Fig. 14 Power vs. Temperature Derating Curve L Vary t p to obtain required I L = 1 V t p D.U.T. E C. Ω I L I L =. E C =.7 VDS t p E C Fig. 1 Clamped Inductive Test Circult Fig. 16 Clamped Inductive Waveforms Document Number: 918 www.vishay.com S946Rev. A, 19Jan9
IRF961, SiHF961 R D R G D.U.T. 1 V Q GS Q G Q GD 1 V Pulse width 1 µs Duty factor.1 % V G Charge Fig. 17a Switching Time Test Circuit Fig. 18a Basic Gate Charge Waveform Current regulator Same type as D.U.T. t d(on) t r t d(off) t f kω 1 % 12 V.2 µf.3 µf D.U.T. 9 % 3 ma Fig. 17b Switching Time Waveforms Fig. 18b Gate Charge Test Circuit I G I D Current sampling resistors www.vishay.com Document Number: 918 6 S946Rev. A, 19Jan9
IRF961, SiHF961 Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R G dv/dt controlled by R G I SD controlled by duty factor "D" D.U.T. device under test Compliment NChannel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period = 1 V* D.U.T. I SD waveform Reverse recovery current Reapplied voltage Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt Inductor current Body diode forward drop Ripple % I SD * = V for logic level and 3 V drive devices Fig. 19 For PChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?918. Document Number: 918 www.vishay.com S946Rev. A, 19Jan9 7
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