FTP18N6 N-Channel MOSFET Pb Lead Free Package and Finish Applications: DC Motor Control UPS Class D Amplifier V DSS R DS(ON) (Max.) I D 6V 18 mω 59A Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND FTP18N6 TO-22 FTP18N6 G D S TO-22 Not to Scale G D S Absolute Maximum Ratings Tc=25 o C unless otherwise specified Symbol Parameter Maximum Units V DSS Drain-to-Source Voltage (NOTE *1) 6 V I D Continuous Drain Current. 59 I D @ o C Continuous Drain Current Figure 3 A I DM Pulsed Drain Current, @ V (NOTE *2) Figure 6 Power Dissipation 15 W P D Derating Factor above 25 o C 1. W/ o C Gate-to-Source Voltage ±2 V E AS Single Pulse Avalanche Engergy L=5 µh, I D =21.5A 115 mj I AS Pulsed Avalanche Engergy Figure 8 dv/dt Peak Diode Recovery dv/dt (NOTE *3) 3. V/ns T L T PKG T J and T STG Maximum Temperature for Soldering Leads at.63in (1.6) from Case for seconds Package Body for seconds Operating Junction and Storage Temperature Range Caution: Stresses greater than those listed in the Absolute Maximum Ratings Table may cause permanent damage to the device. Thermal Resistance 3 26-55 to 175 R θjc Junction-to-Case -- -- 1. Water cooled heatsink, P D adjusted for o C/W a peak junction temperature of +175 o C R θja Junction-to-Ambient -- -- 62 1 cubic foot chamber, free air o C
OFF Characteristics T J =25 o C unless otherwise specified BV DSS Drain-to-Source Breakdown Voltage 6 -- -- V =V, I D =25µA BV DSS / T J BreakdownVoltage Temperature Coefficient, Figure 11 --.69 -- V/ o C Reference to 25 o C, I D =25µA -- -- 25 V DS =6V, =V I DSS Drain-to-Source Leakage Current µa V -- -- 25 DS =48V, =V T J =15 o C Gate-to-Source Forward Leakage -- -- =+2V I GSS na Gate-to-Source Reverse Leakage -- -- - =-2V ON Characteristics T J =25 o C unless otherwise specified Static Drain-to-Source On-Resistance, R DS(ON) -- =V, I D =36A 16 18 Figure 9 and mω (NOTE *4) (TH) Gate Threshold Voltage, Figure 12 2. -- 4. V V DS =, I D =25µA gfs Forward Transconductance -- 36 -- S V DS =15V, I D =59A (NOTE *4) Dynamic Characteristics Essentially independent of operating temperature C iss Input Capacitance -- 146 -- =V C oss Output Capacitance -- 42 -- V DS =25V pf f=1.mhz C rss Reverse Transfer Capacitance -- 9 -- Figure 14 Q g Total Gate Charge -- 39.7 59.6 V DS =3V Q gs Gate-to-Source Charge -- 8.4 12.6 nc I D =59A Q gd Gate-to-Drain ( Miller ) Charge -- 9.2 13.8 =V Figure 15 Resistive Switching Characteristics Essentially independent of operating temperature t d(on) Turn-On Delay Time -- 9.5 -- V DD =3 V t rise Rise Time -- 61 -- I D =59A ns t d(off) Turn-Off Delay Time -- 72 -- =V t fall Fall Time -- 87 -- R G =9.1Ω Page 2 of 11
Source-Drain Diode Characteristics T J =25 o C unless otherwise specified I S Continuous Source Current (Body Diode) -- -- 59 A Integral pn-diode I SM Pulsed Source Current (Body Diode) -- -- 236 A in MOSFET V SD Diode Forward Voltage -- -- 1.5 V I S =59A, =V t rr Reverse Recovery Time -- 57 86 ns =V Q rr Reverse Recovery Charge -- 9 135 nc I F =59A, di/dt= A/µs Notes: *1. T J = +25 o C to +175 o C *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. I SD = 59A, di/dt < A/µs, V DD < BV DSS, T J =+175 o C *4. Pulse width < 38µs; duty cycle < 2% Page 3 of 11
Duty Factor Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case 1. 5% ZθJC, Thermal Impedance (Normalized)..1. 2% % 5% 2% 1% single pulse P DM t 1 t 2 NOTES: DUTY FACTOR: D=t1/t2 PEAK T J =P DM x Z θjc x 1E-5 1E-4 1E-3 1E-2 1E-1 1E+ 1E+1 t p, Rectangular Pulse Duration (s) Figure 2. Maximum Power Dissipation Figur e 3. vs Case Temperature Maximum Continuous Drain Current vs Case Temperature P D, Power Dissipation (W) 16 14 12 8 6 4 2 25 5 75 125 15 175 25 5 75 125 15 T C, Case Temperature ( o C) T C, Case Temperature ( o C) I D, Drain Current (A) 7 6 5 4 3 2 175 I D, Drain Current (A) 22 2 18 16 14 12 Figure 4. Typical Output Characteristics PULSE DURATION = 25 µs DUTY FACTOR =.5% MAX T C = 25 o C = 15V = V = 8V = 6V RDS(ON), Drain-to-Source ON Resistance (mω) Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current 3 8 VGS = 4.5V PULSE DURATION = 25 µs 6 25 VGS = 4V DUTY FACTOR =.5% MAX 4 T C = 25 o C VGS = 3.5V 2 2 VGS = 3V 15 5 3 4 5 6 7 8 9 = 5V Fi gur e 5. 5 45 4 35 I D = 14A I D = 28A I D = 55A V DS, Drain-to-Source Voltage (V), Gate-to-Source Voltage (V) Page 4 of 11
Figure 6. Maximum Peak Current Capability I DM, Peak Current (A) TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I25 15 ---------------------- TC 125 1 = V 1E-6 E-6 E-6 1E-3 E-3 E-3 1E+ E+ t p, Pulse Width (s) Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability I D, Drain-to-Source Current (A) 4 35 3 25 2 15 5 PULSE DURATION = 25 µs DUTY FACTOR =.5% MAX V DS = V +175 o C +25 o C -55 o C 1.5 2. 2.5 3. 3.5 4. IAS, Avalanche Current (A) STARTING T J = 15 o C If R : t AV = (L/R) ln[(i AS R)/(1.3BV DSS -V DD )+1] If R= : t AV = (L I AS )/(1.3BV DSS -V DD ) R equals total Series resistance of Drain circuit STARTING T J = 25 o C 1 1E-6 E-6 E-6 1E-3 E-3 E-3, Gate-to-Source Voltage (V) t AV, Time in Avalanche (s) R DS(ON), Drain-to-Source ON Resistance (mω) 5 4 3 2 Figure 9. Typical Drain-to-Source ON Figure. Resistance vs Drain Current PULSE DURATION = µs DUTY FACTOR =.5% MAX T C =25 C =V 5 15 2 25 RDS(ON), Drain-to-Source Resistance (Normalized) Typical Drain-to-Source ON Resistance vs Junction Temperature I D, Drain Current (A) T J, Junction Temperature ( o C) 2.5 2. 1.5 1..5 PULSE DURATION = 25 µs DUTY FACTOR =.5% MAX = V, I D = 15A -75-5 -25 25 5 75 125 15 175 Page 5 of 11
Figure 11. Typical Breakdown Voltage vs Figure 12. Junction Temperature Typical Threshold Voltage vs Junction Temperature BV DSS, Drain-to-Source Breakdown Voltage (Normalized) 1.2 1.15 1. 1.5 1. VGS(TH), Threshold Voltage (Normalized).95 = V V.6 GS = V DS I D = 25 µa I D = 25 µa.9.5-75 -5-25. 25 5 75 125 15 175-75 -5-25. 2 5 75 125 15 175 T J, Junction Temperature ( o C) T J, Junction Temperature ( o C) 1.2 1.1 1..9.8.7 Figure 13. Maximum Forward Bias Safe Figure 14. Operating Area Typical Capacitance vs Drain-to-Source Voltage OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) I D, Drain Current (A) 1 T J = MAX RATED, T C = 25 o C Single Pulse V DS, Drain-to-Source Voltage (V) µs µs 1.ms ms DC C, Capacitance (pf) 1.1.1 1 = V, f = 1MHz Ciss = Cgs + Cgd C oss C ds + C gd Crss = Cgd V DS, Drain Voltage (V) C iss C oss C rss Figure 15. Typical Gate Charge Figure 16. vs Gate-to-Source Voltage Typical Body Diode Transfer Characteristics, Gate-to-Source Voltage (V) 12 V DS =15V 8 V DS =3V V DS =45V 6 4 2 I D = 59A ISD, Reverse Drain Current (A) 2 3 4 5.3.5.7.9 1.1 1.3 Q G, Total Gate Charge (nc) V SD, Source-to-Drain Voltage (V) 18 16 14 12 8 6 4 2 175 o C 25 o C -55 o C = V Page 6 of 11
Test Circuits and Waveforms I D V DS I D V DS D.U.T. V DD (TH) Miller Region 1 ma Q gs Q gd Q g Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform R L V DS 9% V DS R D.U.T. V DD % t d(on) t rise t d(off t fall Figure 19. Resistive Switching Test Circuit Figure 2. Resistive Switching Waveforms Page 7 of 11
Test Circuits and Waveforms di/dt Current Pump Double Pulse I D di/dt = A/ µ s D.U.T. V DD Q rr L t rr I D Figure 22. Diode Reverse Recovery Waveform Figure 21. Diode Reverse Recovery Test Circuit BV DSS L Series Switch (MOSFET) I AS BV DSS D.U.T. 5Ω I AS Coutating Diode V DD V DD t AV t p I 2 AS L EAS = 2 Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Unclamped Inductive Switching Waveforms Page 8 of 11
TO-22 Package For Assembly Lot Codes Ending With: xxxxxh H Symbol Minimum, Average, Maximum, A 3.75 dia 3.85 dia 3.95 dia B 25.7 26. 26.3 C 12. 12.25 12.4 D 3.5 3.6 3.7 J E 2.7 2.75 2.8 F 15.9 16. 16.1 G.1.3.5 K H 1.2 1.3 1.4 J 4.4 4.56 4.67 K 2. 2.6 3. M M.4.54.6 a 1.3 1.4 1.5 b 1.3 1.4 1.5 c.7.8.9 d ---. --- G A e 2.42 2.54 2.66 e1 4.83 5.8 5.33 E D C F d a B b c e e1 Page 9 of 11
TO-22 Package For Assembly Lot Codes Ending With: xxxxxs H Symbol Minimum, Average, Maximum, A 3.75 dia 3.85 dia 3.95 dia B 25.7 26. 26.3 C 12.35 12.5 12.65 J D 3.4 3.5 3.6 E 2.72 2.743 2.8 F 15.9 16. 16.1 G.1.3.5 K H 1.7 1.17 1.27 J 4.47 4.57 4.67 K 2.4 2.67 2.92 M M.46.56.57 a 1.27 1.35 1.55 b 1.22 1.27 1.32 c.8.813.86 d ---. --- G A e 2.29 2.54 2.79 e1 4.83 5.8 5.33 E D F C d a B b c e e1 Page of 11
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