DPG0CHJ HiPerFED² M I F 2x 30 t 35ns rr High Performance Fast ecovery Diode Low Loss and Soft ecovery Common Cathode Part number DPG0CHJ Backside: isolated Features / dvantages: pplications: Package: ISOPLUS27 Planar passivated chips ery low leakage current ery short recovery time Improved thermal behaviour ery low Irm-values ery soft recovery behaviour valanche voltage rated for reliable operation Soft reverse recovery for low EMI/FI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ntiparallel diode for high frequency switching devices ntisaturation diode Snubber diode Free wheeling diode ectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Isolation oltage: 300 ~ Industry standard outline ohs compliant Epoxy meets UL 9-0 Soldering pins for PCB mounting Backside: DCB ceramic educed weight dvanced power cycling
DPG0CHJ Fast Diode Symbol SM M I I I M Definition max. reverse recovery current ; 200 t rr reverse recovery time 200 /µs T 25 C J T 150 C T J 25 C T J 125 C T J 25 C T J 125 C atings min. typ. max. F forward voltage drop I T 25 C 1.2 F T C 10 C thermal resistance junction to case 1.05 K/W F max. non-repetitive reverse blocking voltage reverse current, drain current Conditions T 25 C J F0 threshold voltage T J 175 C 0.1 for power loss calculation only r F slope resistance 9. mω thjc thch max. repetitive reverse blocking voltage T 25 C J average forward current thermal resistance case to heatsink 0 I F 0 rectangular d 0.5 P tot total power dissipation T 25 C 15 W J J T 150 C SM max. forward surge current t ms; (50 Hz), sine; 0 T 5 C C J junction capacitance 150 f 1 MHz T 25 C 0 J T J 175 C C J 5 8.5 35 5 1 1.5 0.9 1.2 30 Unit µ m K/W 50 J pf 3 ns ns
DPG0CHJ Package ISOPLUS27 atings Symbol Definition Conditions min. typ. max. Unit I MS MS current 1) per terminal 70 T J virtual junction temperature -55 175 C T op operation temperature -55 150 C T stg storage temperature -55 150 C Weight F C d Spp/pp d Spb/pb ISOL mounting force with clip 20 creepage distance on surface striking distance through air terminal to terminal 2.7 terminal to backside.1 isolation voltage t 1 second t 1 minute 50/0 Hz, MS; I ISOL 1 m 300 0 120 g N mm mm Product Marking Part number Logo Part No. ssembly Line ssembly Code Date Code IXYS ISOPLUS XXXXXXXXX Zyyww abcd D P G 0 C HJ Diode HiPerFED extreme fast Current ating [] Common Cathode everse oltage [] ISOPLUS27 (3) Ordering Standard Part Number Marking on Product Delivery Mode Quantity Code No. DPG0CHJ DPG0CHJ Tube 30 5059 Similar Part Package oltage class DPG0CHB TO-27D (3) DPG0CQB TO-3P (3) DPG0CPC DPF0CHB TO-23B (D2Pak) (2) TO-27D (3) DPG80CHB TO-27D (3) Equivalent Circuits for Simulation * on die level T J 175 C I 0 0 Fast Diode 0 max threshold voltage 0.1 0 max slope resistance * 7 mω
DPG0CHJ Outlines ISOPLUS27 L D L1 3x b E b Q 2x b2 D3 c 2 1 D1 2x e E1 D2 Dim. Millimeter Inches min max min max.83 5.21 0.190 05 1 2.29 2.5 0.090 0.0 2 1.91 2.1 0.075 0.085 b 1.1 1.0 0.05 0.055 b2 1.91 2.20 0.075 0.087 b 2.92 3.2 0.115 0.128 c 0.1 0.83 0.02 0.033 D 20.80 21.3 0.819 0.80 D1 15.75 1.2 0.20 0 D2 1.5 2.15 0.05 0.085 D3 20.30 20.70 0.799 0.815 E 15.75 1.13 0.20 0.35 E1 13.21 13.72 0.520 0.50 e 5.5 BSC 15 BSC L 19.81 20.0 0.780 0.811 L1 3.81.38 0.150 0.172 Q 5.59.20 20.25 5.50 0.17 17 W - 0. - 0.00 Die konvexe Form des Substrates ist typ. < 0.0 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.0 mm over plastic surface level of device bottom side W Die Gehäuseabmessungen entsprechen dem Typ TO-27 D gemäß JEDEC außer Schraubloch und L max. This drawing will meet all dimensions requiarement of JEDEC outline TO-27 D except screw hole and except L max.
DPG0CHJ Fast Diode 80 0. 18 70 0 50 0 [] 30 T J 150 C [μc] 0.3 20 25 C T J 125 C 200 0.1 0.0 0.8 1.2 1. 2.0 F [ ] -dif [/μs] Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge versus F 0.5 0 1 1 12 I M [] 8 0 [/μs] Fig. 3 T J 125 C 200 Typ. reverse recov. current I M 1. 1.2 1.0 80 70 T J 125 C 200 700 00 500 t fr F 7 5 K f 0.8 0. I M t rr 0 [ns] 50 0 t fr 00 [ns] 200 T J 125 C 200 F [] 3 2 0 0 0 80 120 T J [ C] [/μs] Fig. Typ. dynamic parameters Fig. 5 Typ. reverse recov. time,i M versus T J t rr 0 1 [/μs] Fig. Typ. forward recov. voltage F &timet fr versus di F 12 T J 125 C 200 1.2 1.0 8 E rec [μj] 0 0.8 Z thjc 0. [K/W] 2 0 [/μs] Fig. 7 Typ. recovery energy E rec 0.0 1 0 00 000 t [ms] Fig. 8 Transient thermal impedance junction to case