2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

Similar documents
2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

SEMICONDUCTOR TECHNICAL DATA

MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5.

2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

SEMICONDUCTOR TECHNICAL DATA

2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA

MJD47 MJD50. DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS

TIP120, TIP121, TIP122,

TIP41A TIP41B TIP41C SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA

DPAK For Surface Mount Applications

SEMICONDUCTOR TECHNICAL DATA

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA

BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon ON Semiconductor Preferred Device

For Isolated Package Applications

PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb

NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS

PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C

ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA

MJE13002 MJE13003 Unit

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

SEMICONDUCTOR TECHNICAL DATA

100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION

PNP Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION

DPAK For Surface Mount Applications

1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2)

VCEO(sus) 850 Vdc Emitter Base Voltage VCEV. 10 Vdc Collector Current Continuous. Adc Collector Current Peak (1) Adc Base Current Peak (1) IBM

MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192

Four Transistors Equal Power Each. Watts mw/ C Watts mw/ C TJ, Tstg 55 to +150 C. Characteristic Symbol Min Max Unit

CASE 221A 06 TO 220AB Collector Current Continuous ÎÎÎÎ I Peak(1) I B 4.0

LOW POWER NARROWBAND FM IF

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

SEMICONDUCTOR TECHNICAL DATA

LIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA

WIDEBAND AMPLIFIER WITH AGC

A.A Elettronica Prova scritta del 15/09/03

TIP120, TIP121, TIP122,

MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

Collector Dissipation Tc=25 C 30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C

30A02CH. Bipolar Transistor 30V, 0.7A, Low VCE(sat) PNP Single CPH3. Applications. Features. Specifications

J308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

Designer s Data Sheet Insulated Gate Bipolar Transistor

LOW POWER FM IF SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION

PD Storage Temperature Range Tstg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 4.

MCH6541. Bipolar Transistor. ( )30V, ( )3A, Low VCE(sat) Complementary Dual MCPH6

NPN Silicon MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS

(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. Large current capacity High-speed switching

MPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

2SD1835. Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single NP. Applications

MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP

(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP

2SA608N/2SC536N. Bipolar Transistor. ( )50V, ( )150mA, Low VCE(sat) (PNP)NPN Single NPA-WA. Applicaitons. Features. Specifications ( ) : 2SA608N

POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS

BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C

High-speed switching applications (switching regulator, driver circuit) Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V

2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS

High-speed switching Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) High allowable power dissipation

BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

2SA1418/2SC3648. Bipolar Transistor. ( )160V, ( )0.7A, Low VCE(sat), (PNP)NPN Single PCP. Applicaitons Color TV audio output, inverter

ICM IBM VISOL PD Rating Symbol BUL44 BUL44F Unit TL 260 C. Characteristic Symbol Min Typ Max Unit ICES

Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.

N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS

Relay drivers, high-speed inverters, converters, and other general high-current switching applications

2SD1012. Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA. Specifications. Absolute Maximum Ratings at Ta=25 C

Relay drivers, high-speed inverters, converters, and other general high-current switching applications

High-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation

Low-frequency Amplifer, high-speed switching small motor drive, muting circuit

MPSA44. High Voltage Transistor. NPN Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION

BDW42 NPN, BDW46, BDW47 PNP. Darlington Complementary Silicon Power Transistors

MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS

STEPPER MOTOR DRIVER SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION

MJE18008 MJF NPN Bipolar Power Transistor For Switching Power Supply Applications

CPH6532. Bipolar Transistor 50V, 1A, Low VCE(sat) NPN Dual CPH6. Applications. Features. Specifications

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS

Low collector to emitter saturation voltage Large current capacity

MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT

Transcription:

SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 40 60 Collector Base Voltage VCBO 60 80 Emitter Base Voltage VEBO 6.0 Collector Current Continuous IC 600 madc Total Device Dissipation @ TA = 25 C Derate above 25 C PD 625 5.0 mw mw/ C 2 3 CASE 29 04, STYLE TO 92 (TO 226AA) Total Device Dissipation @ TC = 25 C Derate above 25 C PD.5 2 Watts mw/ C Operating and Storage Junction Temperature Range TJ, Tstg 55 to + C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA 0 C/W Thermal Resistance, Junction to Case R JC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS Collector Emitter Breakdown Voltage() (IC = madc, IB = 0) Collector Base Breakdown Voltage (IC = µadc, IE = 0 ) Emitter Base Breakdown Voltage (IE = µadc, IC = 0) Characteristic Symbol Min Max Unit V(BR)CEO V(BR)CBO 40 60 60 80 V(BR)EBO 6.0 Collector Cutoff Current (VCB =, IE = 0) (VCB =, IE = 0) (VCB =, IE = 0, TA = C) (VCB =, IE = 0, TA = C) ICBO nadc µadc Emitter Cutoff Current (VEB = 4.0, IC = 0) IEBO nadc. Pulse Test: Pulse Width = 0 s, Duty Cycle = 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 996

ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) (Continued) ON CHARACTERISTICS() DC Current Gain (IC = madc, VCE = 5.0 ) Characteristic Symbol Min Max Unit hfe 60 80 (IC = madc, VCE = 5.0 ) 60 80 2 2 (IC = madc, VCE = 5.0 ) Collector Emitter Saturation Voltage (IC = madc, IB = madc) Both Types VCE(sat) 0.5 (IC = madc, IB = 5.0 madc) 0.25 0. Base Emitter Saturation Voltage (IC = madc, IB = madc) Both Types VBE(sat) (IC = madc, IB = 5.0 madc) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (IC = madc, VCE =, f = MHz) Output Capacitance (VCB =, IE = 0, f = MHz) Input Capacitance (VEB = 0.5, IC = 0, f = MHz) Small Signal Current Gain (IC = madc, VCE =, f = khz).2 ft 0 MHz Cobo 6.0 pf Cibo pf hfe 0 Noise Figure (IC = 2 µadc, VCE = 5.0, RS = kω, f = khz) NF 8.0 db. Pulse Test: Pulse Width = 0 s, Duty Cycle = 2.0%. 2 Motorola Small Signal Transistors, FETs and Diodes Device Data

h FE, DC CURRENT GAIN 0 0 0 TJ = 25 C 25 C 55 C VCE = V VCE = 5.0 V 7.0 5.0 0. 0.2 0.3 0.5 0.7 2.0 3.0 5.0 7.0 70 Figure. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 IC = ma ma ma ma 0.5 0.4 0.3 0.2 0. 0 0.005 0.0 0.02 0.05 0. 0.2 0.5 2.0 5.0 IB, BASE CURRENT (ma) Figure 2. Collector Saturation Region Motorola Small Signal Transistors, FETs and Diodes Device Data 3

, COLLECTOR CURRENT ( µ A) IC 2 3 4 VCE = V TJ = 25 C 75 C REVERSE 25 C IC = ICES FORWARD 5 0.4 0.3 0.2 0. 0 0. 0.2 0.3 0.4 0.5 0.6 VBE, BASE EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut Off Region V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 0.6 0.4 0.2 VCE(sat) @ IC/IB = θ V, TEMPERATURE COEFFICIENT (mv/ C) 2.5 2.0 TJ = 55 C to +35 C.5 0.5 VC for VCE(sat) 0 0.5 VB for VBE(sat).5 2.0 0 2.5 0. 0.2 0.3 0.5 2.0 3.0 5.0 0. 0.2 0.3 0.5 2.0 3.0 5.0 Figure 4. On Voltages Figure 5. Temperature Coefficients 70.2 V Vin µs INPUT PULSE tr, tf ns DUTY CYCLE = % VBB 8.8 V VCC V 0.25 µf RB 5. k 3.0 k RC Vout Vin N94 C, CAPACITANCE (pf) 7.0 5.0 3.0 2.0 Cibo Cobo Values Shown are for IC @ ma Figure 6. Switching Time Test Circuit 0.2 0.3 0.5 0.7 2.0 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances 4 Motorola Small Signal Transistors, FETs and Diodes Device Data

t, TIME (ns) 0 0 0 0 tr @ VCC = V td @ VEB(off) = V VCC = V IC/IB = tr @ VCC = V t, TIME (ns) 00 00 00 0 0 0 0 ts @ VCC = V tf @ VCC = V tf @ VCC = V IC/IB = 0.2 0.3 0.5 2.0 3.0 5.0 0 Figure 8. Turn On Time 0.2 0.3 0.5 2.0 3.0 5.0 0 Figure 9. Turn Off Time Motorola Small Signal Transistors, FETs and Diodes Device Data 5

PACKAGE DIMENSIONS SEATING PLANE R A X X H V N F G P N B L K C D J SECTION X X NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.75 0.5 4.45 5. B 0.70 0.2 4.32 5.33 C 0.25 0.65 3.8 4.9 D 0.06 0.022 0.4 0.55 F 0.06 0.09 0.4 0.48 G 0.045 0.055.5.39 H 0.095 0.5 2.42 2.66 J 0.05 0.0 0.39 0. K 0.0 2.70 L 0.2 6.35 N 0.080 0.5 2.04 2.66 P 0. 2.54 R 0.5 2.93 V 0.35 3.43 CASE 029 04 (TO 226AA) ISSUE AD STYLE : PIN. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 92; Phoenix, Arizona 836. 800 44 2447 6F Seibu Butsuryu Center, 3 4 2 Tatsumi Koto Ku, Tokyo 35, Japan. 03 352 835 MFAX: RMFAX0@email.sps.mot.com TOUCHTONE (602) 244 6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://design NET.com 5 Ting Kok Road, Tai Po, N.T., Hong Kong. 852 26629298 6 Motorola Small Signal Transistors, FETs and Diodes Device Data /D