Is Now Part of To learn more about ON Semiconductor, please visit our website at

Similar documents
Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

BAV103 High Voltage, General Purpose Diode

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

BAV ma 70 V High Conductance Ultra-Fast Switching Diode

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

S1AFL - S1MFL. Surface General-Purpose Rectifier

SS13FL, SS14FL. Surface Mount Schottky Barrier Rectifier

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

FJP13007 High Voltage Fast-Switching NPN Power Transistor

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

General Description. Applications. Power management Load switch Q2 3 5 Q1

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

FFSH5065A. Silicon Carbide Schottky Diode 650 V, 50 A

RHRP A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Features. TA=25 o C unless otherwise noted

Features D G. T A =25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1a) 3.8. (Note 1b) 1.6

74VHC14 Hex Schmitt Inverter

Extended V GSS range ( 25V) for battery applications

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor

QED223 Plastic Infrared Light Emitting Diode

RURG8060-F085 80A, 600V Ultrafast Rectifier

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

KSC2383 NPN Epitaxial Silicon Transistor

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

J109 / MMBFJ108 N-Channel Switch

Dual N-Channel, Digital FET

MM74HC04 Hex Inverter

MM74HC14 Hex Inverting Schmitt Trigger

AND9100/D. Paralleling of IGBTs APPLICATION NOTE. Isothermal point

FGH12040WD 1200 V, 40 A Field Stop Trench IGBT

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

PUBLICATION ORDERING INFORMATION. Semiconductor Components Industries, LLC

FDN335N N-Channel 2.5V Specified PowerTrench TM MOSFET

Is Now Part of To learn more about ON Semiconductor, please visit our website at

RURD660S9A-F085 Ultrafast Power Rectifier, 6A 600V

NXH80B120H2Q0SG. Dual Boost Power Module V, 40 A IGBT with SiC Rectifier

Is Now Part of To learn more about ON Semiconductor, please visit our website at

FDN327N FDN327N. N-Channel 1.8 Vgs Specified PowerTrench MOSFET. Absolute Maximum Ratings

RURP1560-F085 15A, 600V Ultrafast Rectifier

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted

Is Now Part of To learn more about ON Semiconductor, please visit our website at

KA431 / KA431A / KA431L Programmable Shunt Regulator

Is Now Part of To learn more about ON Semiconductor, please visit our website at

KSH122 / KSH122I NPN Silicon Darlington Transistor

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE

Is Now Part of To learn more about ON Semiconductor, please visit our website at

FDD V P-Channel POWERTRENCH MOSFET

Features -4 A, -30 V. R DS(ON) G 3. = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage -30 V

FCH023N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 75 A, 23 m

FDS8984 N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ

1. DEFINE THE SPECIFICATION 2. SELECT A TOPOLOGY

FGH40N60SFDTU-F V, 40 A Field Stop IGBT

Features 2.5 A, 30 V. R DS(ON) = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage 30 V

Is Now Part of To learn more about ON Semiconductor, please visit our website at

FDS8949 Dual N-Channel Logic Level PowerTrench MOSFET

NSVF4017SG4. RF Transistor for Low Noise Amplifier. 12 V, 100 ma, f T = 10 GHz typ.

P-Channel PowerTrench MOSFET

AND9518/D DAB L-band Amplifier using the NSVF4020SG4

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Features. Symbol Parameter Ratings Units V DSS Drain-Source Voltage -40 V

FFSP1065A/D. Silicon Carbide Schottky Diode 650 V, 10 A Features. FFSP1065A Silicon Carbide Schottky Diode. Description.

NSVF5501SK RF Transistor for Low Noise Amplifier

FFSP1665A/D. Silicon Carbide Schottky Diode 650 V, 16 A Features. FFSP1665A Silicon Carbide Schottky Diode. Description.

Is Now Part of To learn more about ON Semiconductor, please visit our website at

NVC6S5A444NLZ. Power MOSFET. 60 V, 78 m, 4.5 A, N Channel

NXH160T120L2Q2F2SG. Split T-Type NPC Power Module 1200 V, 160 A IGBT, 600 V, 100 A IGBT

FDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω

N-Channel Logic Level PowerTrench MOSFET

Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakd

Electrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Bre

NC7S14 TinyLogic HS Inverter with Schmitt Trigger Input

NC7SZ175 TinyLogic UHS D-Type Flip-Flop with Asynchronous Clear

Is Now Part of To learn more about ON Semiconductor, please visit our website at

AND8285/D. NCP1521B Adjustable Output Voltage Step Down Converter Simulation Procedure SIMULATION NOTE

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Device Marking Device Package Reel Size Tape Width Quantity FQT1N60C FQT1N60C SOT mm 12mm 4000

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity V36P ISL9V36P3-F8 TO-22AB Tube N/A Electrical Cha

Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1)

FPF1005-FPF1006 IntelliMAX TM Advanced Load Management Products

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

Transcription:

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

Power Saving (mw) www.fairchildsemi.com V Bridge Rectifier Summary The V, 1.2 A, 1 V, single-phase bridge rectifier (hereafter, 1SV), is Fairchild s newly released bridge rectifier packaged in a low profile Micro-DIP socket. It is compatible with its sibling, the (hereafter, 1S), making the 1SV a direct replacement for this device or one from another manufacturer with the same footprint. Compared to Fairchild s previously released bridge rectifiers, thanks to state-of-the-art process technology, the 1SV generates less power loss due to its lower instant forward voltage drop, which boosts system efficiency and serves as the major improvement at today s more stringent power saving regulations. As a side note, the 1SV also offers higher average rectified forward current, higher peak forward surge current, and much greater I 2 T capability. These features allow the 1SV to be used with better survival capability in applications where higher inrush surge and power delivery is required. This application note discusses how efficiency can be improved if the 1SV is used in place of 1S or a competitor s bridge rectifier in the same package. Multiple bridge rectifiers are tested and IV curves compared. Then, analyzed how this improved IV characteristic translates to power savings with a real 3 W AC adaptor. With the same power supply we see that the 1SV, which measured an 8% reduction in V F at 2 A generated a power savings of as much as 66 mw in the 85 V AC low line condition, and an average savings of 3 mw across the voltage range from 85 V to 265 V AC. This 66 mw of savings is achieved without any redesigns, but simply by replacing an existing Micro-DIP bridge with a more efficient V. 7 6 5 4 3 2 1 Figure 1. Power Saving at 3W over 85 12 15 18 22 265 System Power Savings at 3 W when Using 1SV Over Other Parts Rev. 1.. 8/14/14

Load Circuit AC Source The Theory Typically an AC adaptor has a block diagram like in Figure 2 and the bridge rectifier s input waveforms look like the ones shown in Figure 3, with the voltage measured between the 2 AC inputs. Current, i Figure 2. ~ ~ Bridge Rectifier D1 D4 D3 D2 + AC Adaptor Block Diagram imagined, and also experiment shows, that for different bridge rectifiers, which are mainly defined by their different forward voltage drops at the same current point, the current wave shapes and the conduction angles does not change, since the rectified input voltage of 85 V AC 265 V AC is so large and the forward voltage drop difference of different rectifiers is so small that the forward voltage drop difference has no effect on the rectified voltage. The Power Supply Test section demonstrates this. This makes the power loss directly related to the rectifier s diode forward drop: the higher forward voltage drop a rectifier presents, the greater power loss it generates. This simplifies the power loss comparison. Now let s see how much forward voltage drop the rectifiers present. Comparison of VI Characteristics The 1SV, 1S and one competitor part (hereafter, CMPT) with the same footprint are soldered on four coupon boards of the same type and tested using exactly the same equipment, FETtest Model 34, with the configuration as shown in Figure 4. FETtest 34 Device Under Test D1 D3 + DRAIN Force DRAIN Sense ~ Figure 3. Typical AC Adapter Input Waveforms SOURCE Sense SOURCE Force ~ The Power loss of a bridge rectifier, P BR, can be calculated: D4 D2 where; T is the period of the input sine wave; T = 1/6 or 1/5. i(t) is the current flowing through the bridge rectifier. v D1 (v D2, v D3, v D4 ) is the forward voltage drop on D1 (D2, D3, D4). t1 and t2 (t3 and t4) form the conducting time period or conduction angle when both D1 and D2 (D3 and D4) are conducting. How much power a bridge rectifier loses depends on the current flowing through the bridge, the forward voltage drops of the four diodes and the conduction angles. It can be (1) Figure 4. VI Characteristic Check Test Setup DRAIN and SOURCE in the setup diagram refer to the connection leads on FETtest 34. For each bridge rectifier (Device Under Test in Figure 4, hereafter, DUT), 41 current points between 1 ma and 1 A are sent from DRAIN, through DUT, back to SOURCE. And another 41 current points between 1 ma and 1 A are sent from SOURCE, through DUT, back to DRAIN. Figure 5 has the VI characteristics of the three DUTs in ±1 A range and ±1.8 A zoomed-in range. The test points with current flowing from DRAIN, through D1 and D2, back to SOURCE form the first quadrant of the VI curve that shows the positive characteristic of diodes D1 and D2 in series; The test points with current flowing from SOURCE, through D3 and D4, back to DRAIN form the third quadrant of the VI curve that shows the positive characteristic of the diodes D3 and D4 in series. Rev. 1.. 8/14/14 2

Voltage (mv) Voltage (mv) Current (A) Current (A) 1 8 6 4 2-2 -4-6 -8-1 Bridge Rectifier VI Characteristic in ±1A Range -3. -2.5-2. -1.5-1. -.5..5 1. 1.5 2. 2.5 3. Voltage (V) V 1.8 1.5 1.2.9.6.3. -.3 -.6 -.9-1.2-1.5-1.8 Bridge Rectifier VI Characteristic in ±1.8A Range -2. -1.6-1.2 -.8 -.4..4.8 1.2 1.6 2. Voltage (V) V Figure 5. From these VI curves, it can be clearly seen that at the same current point, the 1SV presents the lowest forward voltage drop on either pair of conducting diodes (D1 and D2 or D3 and D4). VI Characteristic of the 3 DUTs To more accurately see the voltage drop difference of the 2 devices over the 1SV, the following two charts are created from the VI data. 3 Bridge Rectifier Diode Voltage Drop Difference 1 Bridge Rectifier Diode Voltage Drop Difference (Zoom-in) 2 8 6 1 4 2-1 -2-4 -2-3 V ( - V) V ( - V) -1-8 -6-4 -2 2 4 6 8 1-6 -8-1 V ( - V) V ( - V) -1.8-1.2 -.6..6 1.2 1.8 Current (A) Current (A) Figure 6. These charts tell us that the competitor part has 239 mv higher average diode voltage drop at -1 A, 285 mv at +1 A, 78 mv at -1.8 A and 95 mv at +1.8 A. Diode Forward Voltage Difference of the 2 DUTs Over V Rev. 1.. 8/14/14 3

The Power Supply Test To explore the impact of V F on power savings in real applications, the following experiment is carried out: the system efficiency of an existing power supply is compared when only the bridge rectifier is changed. An off-the-shelf 3 W AC adaptor is used as the power supply and has specifications as shown in Table 1. Figure 7 has the test setup. The same set of test equipment is used to record the data. Table 1. AC Adaptor Specifications Parameters Symbol Value Unit Low Line V IN_MIN 85 Line Voltage High Line V IN_MAX 265 Line Frequency f 5-6 Hz Output Voltage V O 19 V Output Maximum Current I O 1.58 A V AC Figure 7. Efficiency Measurement Setup First, some sample current waveforms are shown in Figure 8. It tells that changing only the bridge rectifier in an application has little effect on the current wave shape and conduction angle as stated in the Theory Section, and therefore a bridge rectifier s power loss is directly linked to it forward voltage drop, V F. Figure 8. Current Waveforms of Different Rectifiers at the Same Input Voltage and the Same Output Power Rev. 1.. 8/14/14 4

1SV 1S CMPT Second, the measurement result is presented in Table 2. By comparing the system efficiency and power loss at the same input voltage, the impact of V F on efficiency can be seen. In this case, the part with lowest V F, the 1SV, is the best performer in both parameters. Table 2. Test Data on 3 W AC Adaptor DUT V IN (V AC ) P IN (W) V O (V DC ) I O (A) P O (W) P LOSS (W) Efficiency η (%) 85. 35.2 19.257 1.5789 3.45 4.795 86.38% 12. 34.466 19.258 1.5785 3.399 4.68 88.2% 15.45 34.286 19.258 1.5785 3.399 3.887 88.66% 18. 34.648 19.235 1.5784 3.361 4.287 87.63% 22. 34.483 19.242 1.5783 3.37 4.113 88.7% 265.3 34.411 19.245 1.5784 3.376 4.35 88.27% 85. 35.24 19.255 1.5784 3.392 4.848 86.24% 12.3 34.482 19.257 1.5783 3.393 4.89 88.14% 15. 34.298 19.258 1.5784 3.397 3.91 88.63% 18. 34.664 19.234 1.5786 3.363 4.31 87.59% 22.5 34.55 19.241 1.5783 3.368 4.137 88.1% 265.3 34.424 19.245 1.5785 3.378 4.46 88.25% 85. 35.257 19.255 1.5786 3.396 4.861 86.21% 12.3 34.52 19.256 1.5785 3.396 4.16 88.1% 15.2 34.311 19.256 1.5785 3.396 3.915 88.59% 18. 34.666 19.234 1.5785 3.361 4.35 87.58% 22. 34.56 19.241 1.5783 3.368 4.138 88.1% 265. 34.421 19.244 1.5784 3.375 4.46 88.25% With some data manipulation, we get Table 3. Table 3. Comparison Data Parameter V IN (V AC ) 85 12 15 18 22 265 Power Saving (mw) System Efficiency Boost (%) Saved Power / Power Loss (%) P (1S - 1SV) 54 21 14 14 24 11 P (CMPT - 1SV) 66 39 28 18 25 11 η (1SV - 1S).14.6.4.3.6.3 η (1SV - CMPT).16.1.7.5.6.3 P (1S - 1SV) / P LOSS.1S 1.11.51.36.32.59.28 P (CMPT - 1SV) / P LOSS.CMPT 1.36.94.72.42.6.28 Rev. 1.. 8/14/14 5

Power Loss (W) Power Saving (mw) System Efficiency Efficiency Boost (%) Plotting the data on charts (Figure 9-Figure 12) we can better see how the 1SV reduces power loss and therefore improves system efficiency. Using the 1SV over the 1S and the competitor counterpart can boost system efficiency up to.14% and.16%, respectively, which is equivalent to a power saving of about 54 mw and 66 mw for a 3 W power supply. All the power savings come from the bridge rectifier. If the 1SV is used in applications that have a higher power output, the power savings will be even greater. 89% 88% System Efficiency at 3W Efficiency Boost at 3W over Specified DUT.2.16.12 87% V 86% 8 13 18 23 28.8.4. 8 13 18 23 28 Figure 9. System Efficiency at 3W with Different Rectifiers Figure 1. System Efficiency Boost at 3 W when using 1SV Over other Parts 5. 4.5 4. System Power Loss at 3W V 7 6 5 4 Power Saving at 3W over Specified DUT 3.5 3. 3 2 1 2.5 85 12 15.45 18 22 265.3 85 12 15 18 22 265 Figure 11. System Power Loss at 3 W with Different Rectifiers Figure 12. System Power Savings at 3 W when using 1SV Over other Parts Conclusion As postulated, the lower diode forward voltage drop of the 1SV results in a lower VI loss and therefore boosts system efficiency. This effect is even more prominent when output power is increased or when input voltage is at the low end of the universal voltage range. In addition to its direct impact in improving efficiency, the 1SV s higher I 2 T specification over parts that have the same footprint makes it a great selection for taking care of startup inrush current. All in all, V is an excellent selection for universal off-line power supplies. Rev. 1.. 8/14/14 6

Related Datasheets V 1.2 A, 1 V, Micro-DIP, Single-Phase Bridge Rectifier Author Renhua Zheng, Principal Applications Engineer, ifet / Fairchild Tel: 48-822-2151 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Rev. 1.. 8/14/14 7

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 811 USA Phone: 33 675 2175 or 8 344 386 Toll Free USA/Canada Fax: 33 675 2176 or 8 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 8 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 291 Japan Customer Focus Center Phone: 81 3 5817 15 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com