CM6YN-12F / CM6YP-12F TLI-Series (Three Level Inverter) IGBT P V Q W Q V R P S J Y, Z U (2 PLACES) L ( PLACES) M N K (3 PLACES) Y, Z G F E B CM6YN-12F D A X T C Outline Drawing and Circuit Diagram RTC CM6YN-12F Dim. Inches Millimeters A.92 125. B 3.7 9. C.87+./-.2 22.+1./-.5 D.33±.1 11.±.25 E 3.11±.1 79.±.25 F 2.77 7.5 G 1.9 8.25.67 17. J 2.16 55. K M8 Metric M8 L.22 Dia. 5.5 Dia. M M Metric M Dim. Inches Millimeters N.35 9. P.2 5.15 Q 1.18 3. R.98 25. S 1.18+./-.2 3.+1./-.5 T 1.28+./-.2 35.+1./-.5 U.1 Min. 3.6 Min. V.85 21.5 W.88 22.5 X 1.39 57.7 Y RTC CM6YP-12F XP-3 ousing Z JST Connector AWG Wire # SX-1T-P.6 28 ~ 22 or SX-2T-P.6 3 ~ 26 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM6YN-12F and CM6YP-12F are 6V (V CES ), 6 Ampere TLI-Series IGBT Power Modules. Current Rating V CES Type Amperes Volts (x 5) CM 6 12 CM6YP-12F Description: The TLI-Series has been designed for three level (neutral point clamped) topologies in applications requiring high efficiency operation and improved output waveform quality. They also provide significant benefits in applications where low output noise using small filter components is required or where long motor leads create Standing Wave Ratio (SWR) voltage surge issues. Features: Smaller Output Voltage Steps Reducing Surge Voltage Low Output Ripple Current Lower Modulation Frequency With Same Quality Output Waveform Applications: Three Level Inverter Topologies Solar Power Inverters igh Efficiency UPS Long Motor Lead Applications 1
CM6YN-12F / CM6YP-12F Absolute Maximum Ratings, unless otherwise specified Ratings Symbol CM6YN-12F / CM6YP-12F Units Inverter Part Junction Temperature T j - to 15 C Storage Temperature T stg - to 125 C Collector-Emitter Voltage (G-E Short) V CES 6 Volts Gate-Emitter Voltage (C-E Short) V GES ±2 Volts Collector Current DC (T C = 25 C) I C 6 Amperes Peak Collector Current (Pulse) *2 I CM 12 Amperes Emitter Current (T C = 25 C) I *1 E 6 Amperes Peak Emitter Current (Pulse) *2 I *1 EM 12 Amperes Maximum Collector Dissipation (T C ' = 25 C) P *3 C 186 Watts Mounting Torque, Main Terminals (,, ), M8 Screw (Max.) 95 in-lb Mounting Torque, Mounting oles, M5 Screw (Max.) 3 in-lb Mounting Torque, C2, Terminals, M Screw (Max.) 15 in-lb Weight (Typical) 7 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 25 V rms Clamp Diode Part Repetitive Peak Reverae Voltage V RRM 6 Volts Forward Current (T C = 25 C) I FM 6 Amperes *1 I E, I EM, V EC, t rr, and Q rr represent characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. *3 Junction temperature (T j ) should not increase beyond 15 C. 2
CM6YN-12F / CM6YP-12F Electrical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Inverter Part Collector-Cutoff Current I CES V CE = V CES, V GE = V 1 ma Gate-Emitter Threshold Voltage V GE(th) I C = 6mA, V CE = 1V 5 6 7 Volts Gate Leakage Current I GES V GE = V GES, V CE = V 8 μa Collector-Emitter Saturation Voltage V CE(sat) I C = 6A, V GE = 15V, 1.6 2.2 Volts I C = 6A, V GE = 15V, 1.6 Volts Input Capacitance C ies 16 nf Output Capacitance C oes V CE = 1V, V GE = V 11 nf Reverse Transfer Capacitance C res 6. nf Total Gate Charge Q G, I C = 6A, V GE = 15V 372 nc Turn-on Delay Time t d(on), I C = 6A, 7 ns Turn-on Rise Time t r V G = V G = 15V, 6 ns Turn-off Delay Time t d(off) R G = 3.3Ω, 11 ns Turn-off Fall Time t f Switching Operation, 3 ns Reverse Recovery Time t *1 rr I E = 6A 2 ns Reverse Recovery Charge Q *1 rr 2.25 μc Emitter-Collector Voltage V *1 EC I E = 6A, V GE = V 3.1 Volts External Gate Resistance R G 3.3 1 Ω Clamp Diode Part Repetitive Reverse Current I RRM V R = V RRM 1 ma Forward Voltage Drop V FM I F = 6A 2.8 Volts Reverse Recovery Time t rr I F = 6A,, 3 ns Reverse Recovery Charge Q rr V G = V G = 15V, R G = 3.3Ω, 7.68 μc Switching Operation Thermal and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case * R th(j-c') Q Inverter IGBT.67 C/W Thermal Resistance, Junction to Case * R th(j-c') D Inverter FWDi.13 C/W Thermal Resistance, Junction to Case * R th(c-f) D Clamp Diode Part.9 C/W Contact Thermal Resistance **5 R th(c-f) Thermal Grease Applied per 1 Module.28 C/W * T C measured point is just under the chips. If using this value, R th(f-a) should be measured just under the chips. *5 Typical value is measured by using thermally conductive grease of λ =.9 [W/(m K)]. 3
CM6YN-12F / CM6YP-12F COLLECTOR CURRENT, I C, (AMPERES) 12 1 8 6 2 OUTPUT CARACTERISTICS V GE = 2V 11 15 1 9.5 7.5 1 2 3 VOLTAGE, V CE, (VOLTS) 8 8.5 9 SATURATION VOLTAGE, V CE(sat), (VOLTS) SATURATION VOLTAGE CARACTERISTICS 3. V GE = 15V T 2.5 j = 25 C 2. 1.5 1..5 2 6 8 1 12 COLLECTOR-CURRENT, I C, (AMPERES) SATURATION VOLTAGE, V CE(sat), (VOLTS) SATURATION VOLTAGE CARACTERISTICS 5 3 2 1 I C = 6A I C = 12A I C = 2A 6 8 2 1 16 18 2 22 GATE-EMITTER VOLTAGE, V GE, (VOLTS) 1 FREE-WEEL DIODE FORWARD CARACTERISTICS 1 CLAMP DIODE FORWARD CARACTERISTICS CAPACITANCE VS. V CE V GE = V C ies EMITTER CURRENT, I E, (AMPERES) FORWARD CURRENT, I F, (AMPERES) CAPACITANCE, C ies, C oes, C res, (nf) C oes C res.5 1. 1.5 2. 2.5 3. 3.5. EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS).5 1. 1.5 2. 2.5 3. 3.5. FORWARD VOLTAGE, V F, (VOLTS) 1 1-1 1 VOLTAGE, V CE, (VOLTS) ALF-BRIDGE SWITCING CARACTERISTICS GATE CARGE VS. V GE (INVERTER PART) SWITCING LOSS VS. COLLECTOR CURRENT SWITCING TIME, (ns) 1 t d(off) t d(on) t f GATE-EMITTER VOLTAGE, V GE, (VOLTS) t r 8 1 2 3 5 6 COLLECTOR CURRENT, I C, (AMPERES) GATE CARGE, QG, (nc) 2 16 12 I C = 6A V CC = 2V SWITCING LOSS, E SW(on), E SW(off), (mj/pulse) E SW(on) E SW(off) 1 COLLECTOR CURRENT, I C, (AMPERES)
CM6YN-12F / CM6YP-12F REVERSE RECOVERY SWITCING LOSS, E rr, (mj/pulse) REVERSE RECOVERY SWITCING LOSS VS. FORWARD CURRENT (CLAMP DIODE PART - TYPICAL) 1 FORWARD CURRENT, I F, (AMPERES) NORMALIZED TRANSIENT TERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT TERMAL IMPEDANCE CARACTERISTICS 1 1-3 1-2 1-1 1 1-1 1-2 1-3 Single Pulse T C = 25 C Per Unit Base = R th(j-c') =.67 C/W (IGBT) R th(j-c') =.13 C/W (FWDi) 1-2 R th(j-c) =.9 C/W (Clamp Diode) 1-3 1-5 1-1 -3 TIME, (s) 1-1 5