Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Thermal Resistance IRF285PbF HEXFET Power MOSFET V DSS = 55V R DS(on) = 4.7mΩ TO-22AB I D = 75A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ 1V (Silicon limited) 175 I D @ T C = C Continuous Drain Current, V GS @ 1V (See Fig.9) 12 A I D @ T C = 25 C Continuous Drain Current, V GS @ 1V (Package limited) 75 I DM Pulsed Drain Current 7 P D @T C = 25 C Power Dissipation 33 W Linear Derating Factor 2.2 W/ C V GS Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Energy 45 mj E AS (6 sigma) Single Pulse Avalanche Energy Tested Value 122 I AR Avalanche Current See Fig.12a, 12b, 15, 16 A E AR Repetitive Avalanche Energy mj T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Soldering Temperature, for 1 seconds 3 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (1) N m (lbf in) Parameter Typ. Max. Units R θjc Junction-to-Case.45 R θcs Case-to-Sink, Flat, Greased Surface.5 C/W R θja Junction-to-Ambient 62 HEXFET(R) is a registered trademark of International Rectifier. www.irf.com 1 G D S PD - 95493A 7/22/1
IRF285PbF Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = V, I D = 25µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient.6 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 3.9 4.7 mω V GS = 1V, I D = 14A V GS(th) Gate Threshold Voltage 2. 4. V V DS = 1V, I D = 25µA g fs Forward Transconductance 91 S V DS = 25V, I D = 14A I DSS Drain-to-Source Leakage Current 2 V µa DS = 55V, V GS = V 25 V DS = 55V, V GS = V, T J = 125 C I GSS Gate-to-Source Forward Leakage 2 V GS = 2V na Gate-to-Source Reverse Leakage -2 V GS = -2V Q g Total Gate Charge 15 23 I D = 14A Q gs Gate-to-Source Charge 38 57 nc V DS = 44V Q gd Gate-to-Drain ("Miller") Charge 52 78 V GS = 1V t d(on) Turn-On Delay Time 14 V DD = 28V t r Rise Time 12 I D = 14A ns t d(off) Turn-Off Delay Time 68 R G = 2.5Ω t f Fall Time 11 V GS = 1V Between lead, D L D Internal Drain Inductance 4.5 6mm (.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact S C iss Input Capacitance 511 V GS = V C oss Output Capacitance 119 pf V DS = 25V C rss Reverse Transfer Capacitance 21 ƒ = 1.MHz, See Fig. 5 C oss Output Capacitance 647 V GS = V, V DS = 1.V, ƒ = 1.MHz C oss Output Capacitance 86 V GS = V, V DS = 44V, ƒ = 1.MHz C oss eff. Effective Output Capacitance 16 V GS = V, V DS = V to 44V Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 175 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 7 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 14A, V GS = V t rr Reverse Recovery Time 8 12 ns T J = 25 C, I F = 14A Q rr Reverse Recovery Charge 29 43 nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting T J = 25 C, L =.8mH R G = 25Ω, I AS = 14A. (See Figure 12). ƒ I SD 14A, di/dt 24A/µs, V DD V (BR)DSS, T J 175 C Pulse width 4µs; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Limited by T Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. % tested to this value in production. 2 www.irf.com
I D, Drain-to-Source Current ( A) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) Gfs, Forward Transconductance (S) IRF285PbF VGS TOP 15V 1V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 15V 1V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V 4.5V 1 1 2µs PULSE WIDTH Tj = 25 C.1 1 1 V DS, Drain-to-Source Voltage (V) 1 2µs PULSE WIDTH Tj = 175 C.1 1 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics T J = 25 C 2 T J = 175 C 16 T J = 175 C 12 8 T J = 25 C V DS = 25V 2µs PULSE WIDTH 1 4. 5. 6. 7. 8. 9. 1. V GS, Gate-to-Source Voltage (V) 4 V DS = 25V 2µs PULSE WIDTH 4 8 12 16 2 I D, Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com 3
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) IRF285PbF 8 V GS = V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd 2 16 I D = 14A V DS = 44V VDS= 28V C oss = C ds C gd 6 Ciss 12 4 8 2 Coss 4 Crss 1 1 V DS, Drain-to-Source Voltage (V) 4 8 12 16 2 24 Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage.. T J = 175 C OPERATION IN THIS AREA LIMITED BY R DS (on) 1. µsec T J = 25 C 1. V GS = V.1.2.4.6.8 1. 1.2 1.4 1.6 1.8 V SD, Source-toDrain Voltage (V) 1 1 Tc = 25 C Tj = 175 C Single Pulse 1msec 1msec 1 1 V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
IRF285PbF 18 LIMITED BY PACKAGE 3. I D = 175A 15 2.5 I D, Drain Current (A) 12 9 6 3 25 5 75 125 15 175 T, Case Temperature ( C C) R DS(on), Drain-to-Source On Resistance (Normalized) 2. 1.5 1..5 V GS = 1V. -6-4 -2 2 4 6 8 12 14 16 18 T J, Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 1. Normalized On-Resistance Vs. Temperature 1 Thermal Response (Z thjc ).1.1 D =.5.2.1.5.2.1 SINGLE PULSE (THERMAL RESPONSE) P DM t 1 t 2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc T C.1.1.1.1.1.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
V GS(th) Gate threshold Voltage (V) IRF285PbF R G V DS 2V V GS tp Fig 12a. Unclamped Inductive Test Circuit tp L D.U.T IAS.1Ω V (BR)DSS 15V DRIVER - V DD A E AS, Single Pulse Avalanche Energy (mj) 8 6 4 2 TOP BOTTOM 25 5 75 125 15 175 Starting Tj, Junction Temperature ( C) I D 43A 87A 14A I AS Fig 12b. Unclamped Inductive Waveforms Q G Fig 12c. Maximum Avalanche Energy Vs. Drain Current 1 V Q GS Q GD 4. V G I D = 25µA Current Regulator Same Type as D.U.T. Charge Fig 13a. Basic Gate Charge Waveform 3. 2. 5KΩ 12V.2µF.3µF V GS D.U.T. V - DS 1. -75-5 -25 25 5 75 125 15 175 3mA T J, Temperature ( C ) I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6 www.irf.com
E AR, Avalanche Energy (mj) IRF285PbF Avalanche Current (A) 1 Duty Cycle = Single Pulse.1.5.1 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 1 1.E-7 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 5 4 3 2 TOP Single Pulse BOTTOM 1% Duty Cycle I D = 14A 25 5 75 125 15 175 Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-5 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 15, 16). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure 11) P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc Fig 16. Maximum Avalanche Energy I av = 2DT/ [1.3 BV Z th ] Vs. Temperature E AS (AR) = P D (ave) t av www.irf.com 7
IRF285PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =1V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V DS R D R G V GS D.U.T. - V DD 1V Pulse Width 1 µs Duty Factor.1 % Fig 18a. Switching Time Test Circuit V DS 9% 1% V GS t d(on) t r t d(off) t f Fig 18b. Switching Time Waveforms 8 www.irf.com
IRF285PbF TO-22AB Package Outline(Dimensions are shown in millimeters (inches)) TO-22AB Part Marking Information EXAMPLE: THIS IS AN IRF11 LOT CODE 1789 ASSEMBLED ON WW 19, 2 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR = 2 WEEK 19 LINE C TO-22AB package is not recommended for Surface Mount Application. Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) 252-715 TAC Fax: (31) 252-793 Visit us at www.irf.com for sales contact information.7/21 www.irf.com 9