2N6487, 2N6488 (), 2N649, 2N6491 () Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. Features High DC Current Gain High Current Gain Bandwidth Product TO22 Compact Package These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit CollectorEmitter Voltage CollectorBase Voltage V CEO 6 8 V CB 7 9 EmitterBase Voltage V EB 5. Collector Current Continuous I C 15 Adc Base Current I B 5. Adc Total Power Dissipation @ T C = 25 C Derate above 25 C Total Power Dissipation @ T A = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D 75.6 P D 1.8.14 W W/ C W W/ C T J, T stg 65 to +15 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 7 C/W Thermal Resistance, JunctiontoAmbient R JA 7 C/W www.onsemi.com 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 68 VOLTS, 75 WATTS 1 BASE COLLECTOR 2, 4 EMITTER 3 1 2 3 4 MARKING DIAGRAM 2N64xxG AYWW 1 BASE TO22 CASE 221A STYLE 1 COLLECTOR 2, 4 EMITTER 3 2N64xx = Specific Device Code xx = See Table on Page 5 G = PbFree Package A = Assembly Location Y = Year WW = Work Week *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 214 November, 214 Rev. 16 1 Publication Order Number: 2N6487/D
2N6487, 2N6488 (), 2N649, 2N6491 () ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) (Note 2) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) (I C = 2 madc, I B = ) V CEO(sus) 6 8 CollectorEmitter Sustaining Voltage (Note 3) (I C = 2 madc, V BE = 1.5 ) V CEX 7 9 Collector Cutoff Current (V CE = 3, I B = ) (V CE = 4, I B = ) I CEO 1. 1. madc Collector Cutoff Current (V CE = 65, V EB(off) = 1.5 ) (V CE = 85, V EB(off) = 1.5 ) (V CE = 6, V EB(off) = 1.5, T C = 15 C) (V CE = 8, V EB(off) = 1.5, T C = 15 C) I CEX 5 5 5. 5. Adc Emitter Cutoff Current (V BE = 5., I C = ) I EBO 1. madc ON CHARACTERISTICS DC Current Gain (I C = 5. Adc, V CE = 4. ) (I C = 15 Adc, V CE = 4. ) h FE 2 5. 15 CollectorEmitter Saturation Voltage (I C = 5. Adc, I B =.5 Adc) (I C = 15 Adc, I B = 5. Adc) V CE(sat) 1.3 3.5 BaseEmitter On Voltage (I C = 5. Adc, V CE = 4. ) (I C = 15 Adc, V CE = 4. ) V BE(on) 1.3 3.5 DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) (I C = 1. Adc, V CE = 4., f test = 1. MHz) SmallSignal Current Gain (I C = 1. Adc, V CE = 4., f = 1. khz) f T 5. h fe 25 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 3 s, Duty Cycle 2.%. 4. f T = h fe f test 2
2N6487, 2N6488 (), 2N649, 2N6491 () T A 4. T C 8 PD, POWER DISSIPATION (WATTS) 3. 2. 1. 6 4 2 T A T C 2 4 6 8 1 12 14 16 T C, CASE TEMPERATURE ( C) Figure 1. Power Derating + 1 V 25 s - 1 V t r, t f 1 ns DUTY CYCLE = 1.% 51 R B D 1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE I B 1 ma MSD61 USED BELOW I B 1 ma - 4 V R C Figure 2. Switching Time Test Circuit D 1 V CC + 3 V R B AND R C VARIED TO OBTAIN DESIRED CURRENT LEVELS. FOR, REVERSE ALL POLARITIES. SCOPE t, TIME (ns) 1 5 2 1 5 T C = 25 C 2 V CC = 3 V I C /I B = 1 1.2.5 1. 2. 5. 1 2 Figure 3. TurnOn Time t r t d @ V BE(off) 5. V r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1..7.5.3.2.1.7.5.3.2 D =.5.2.1.5.2.1 SINGLE PULSE Z JC (t) = r(t) R JC R JC = 7 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) - T C = P (pk) Z JC(t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2.1.1.2.5.1.2.5 1. 2. 5. 1 2 5 1 2 5 1. k t, TIME (ms) Figure 4. Thermal Response 3
2N6487, 2N6488 (), 2N649, 2N6491 () IC, COLLECTOR CURRENT (AMP) 2 1 5. 2. 1..5 T J = 15 C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ T C = 25 C CURVES APPLY BELOW RATED V CEO.2 dc.1 2. 4. 1 2 4 6 8 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1 s 5 s 1. ms 5. ms There are two limitations on the power handling ability of a transistors average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 15 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 1% provided T J(pk) 15 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. ActiveRegion Safe Operating Area 5 1 7 t s t, TIME (ns) 1 5 t f 2 1 V CC = 3 V I C /I B = 1 I B1 = I B2 5.2.5 1. 2. 5. 1 2 C, CAPACITANCE (pf) 3 2 1 7 5.5 C ib C ob C ob 1. 2. 5. 1 2 V R, REVERSE VOLTAGE (VOLTS) 5 Figure 6. TurnOff Time Figure 7. Capacitances 2N6487, 2N6488 2N649, 2N6491 5 5 T J = 15 C 2 25 C 2 T J = 15 C h FE, DC CURRENT GAIN 1 5 2 1-55 C V CE = 2. V h FE, DC CURRENT GAIN 1 5 2 1-55 C 25 C V CE = 2. V 5. 5..2.5 1. 2. 5. 1 2.2.5 1. 2. 5. 1 2 Figure 8. DC Current Gain 4
2N6487, 2N6488 (), 2N649, 2N6491 () V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 2. 1.8 1.4 1. I C = 1. A.8 4. A 8. A.6.4.2 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 2. 1.8 1.4 1. I C = 1. A 4. A 8. A.8.6.4.2 5. 1 2 5 1 2 5 1 2 5 5. 1 2 5 1 2 5 1 2 5 I B, BASE CURRENT (ma) I B, BASE CURRENT (ma) Figure 9. Collector Saturation Region 2.8 2.8 2.4 2.4 V, VOLTAGE (VOLTS) 2. V BE(sat) = I C /I B = 1.8 V BE @ V CE = 2. V.4 V CE(sat) @ I C /I B = 1.2.5 1. 2. 5. 1 2 V, VOLTAGE (VOLTS) 2. V BE(sat) @ I C /I B = 1.8 V BE @ V CE = 2. V.4 V CE(sat) @ I C /I B = 1.2.5 1. 2. 5. 1 2 Figure 1. On Voltages ORDERING INFORMATION Device Device Marking Package Shipping 2N6487G 2N6487 TO22 (PbFree) 5 Units / Rail 2N6488G 2N6488 TO22 (PbFree) 2N649G 2N649 TO22 (PbFree) 2N6491G 2N6491 TO22 (PbFree) 5 Units / Rail 5 Units / Rail 5 Units / Rail 5
2N6487, 2N6488 (), 2N649, 2N6491 () PACKAGE DIMENSIONS TO22 CASE 221A9 ISSUE AH H Q Z L V G B 4 1 2 3 N D A K F T U S R J C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.57.62 14.48 15.75 B.38.415 9.66 1.53 C.16.19 4.7 4.83 D.25.38.64.96 F.142.161 3.61 4.9 G.95.15 2.42 2.66 H.11.161 2.8 4.1 J.14.24.36.61 K.5.562 12.7 14.27 L.45.6 1.15 1.52 N.19.21 4.83 5.33 Q.1.12 2.54 3.4 R.8.11 2.4 2.79 S.45.55 1.15 1.39 T.235.255 5.97 6.47 U..5. 7 V.45 --- 1.15 --- Z ---.8 --- 2.4 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 336752175 or 8344386 Toll Free USA/Canada Fax: 336752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 291 Japan Customer Focus Center Phone: 813581715 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N6487/D