UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 8N80 is generally applied in high efficiency switch mode power supplies. FEATURES * Typically 35 nc Low Gate Charge * R DS(ON) <.45Ω @ V GS = 0V, I D = 4.0A * Typically 3 pf Low C RSS * Improved dv/dt Capability * Fast Switching Speed * 00% Avalanche Tested * RoHS Compliant Product SYMBOL 2.Drain TO-220 TO-220F2 TO-220F TO-220F TO-220F4.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 2 3 Packing 8N80L-TA3-T 8N80G-TA3-T TO-220 G D S Tube 8N80L-TF-T 8N80G-TF-T TO-220F G D S Tube 8N80L-TF2-T 8N80G-TF2-T TO-220F2 G D S Tube 8N80L-TF3-T 8N80G-TF3-T TO-220F G D S Tube 8N80L-TF34-T 8N80G-TF34-T TO-220F4 G D S Tube Note: Pin Assignment: G: GND, D: Drain, S: Source of 9 Copyright 207 Unisonic Technologies Co., Ltd
MARKING UNISONIC TECHNOLOGIES CO., LTD 2 of 9
ABSOLUTE MAXIMUM RATINGS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 800 V Gate-Source Voltage V GSS ±30 V Drain Current (Continuous) (T C =25 C) I D 8 A Drain Current (Pulsed) (Note ) I DM 32 A Avalanche Current (Note ) I AR 8 A Single Pulse Avalanche Energy (Note 3) E AS 850 mj Repetitive Avalanche Energy (Note ) E AR 7.8 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 78 Power Dissipation TO-220F/TO-220F TO-220F4 59 W TO-220F2 62 P D TO-220.43 Linear Derating Factor above (T C =25 C) TO-220F/TO-220F TO-220F4 TO-220F2 Junction Temperature T J +50 C Storage Temperature T STG -55 ~ +50 C Notes:. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 25mH, I AS = 8A, V DD = 50V, R G = 25 Ω, Starting T J = 25 C 4. I SD 8A, di/dt 200A/µs, V DD BV DSS, Starting T J = 25 C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θ JA 62.5 C/W TO-220 0.7 Junction to Case TO-220F/TO-220F TO-220F4 θ JC 2. C/W TO-220F2 2.0 0.47 0.5 W/ C UNISONIC TECHNOLOGIES CO., LTD 3 of 9
ELECTRICAL CHARACTERISTICS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =250µA, V GS =0V 800 V Breakdown Voltage Temperature Coefficient BV DSS / T J Reference to 25 C, I D =250µA 0.5 V/ C Drain-Source Leakage Current I DSS V DS =800V, V GS =0V 0 V DS =640V, T C =25 C 00 µa Gate- Source Leakage Current I GSS V GS =±30V, V DS =0V ±00 na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I D =250µA 3.0 5.0 V Static Drain-Source On-State Resistance R DS(ON) V GS =0V, I D =4A.8.45 Ω Forward Transconductance (Note ) g FS V DS =50V, I D =4A 5.6 S DYNAMIC PARAMETERS Input Capacitance C ISS 580 2050 pf Output Capacitance C OSS V GS =0V, V DS =25V, f=.0mhz 35 75 pf Reverse Transfer Capacitance C RSS 3 7 pf SWITCHING PARAMETERS (Note, Note 2) Total Gate Charge Q G 47 60 nc V GS =0V, V DS =400V, I D =8A Gate to Source Charge Q GS 0 nc R L =50Ω Gate to Drain Charge Q GD 4 nc Turn-ON Delay Time t D(ON) 40 90 ns Rise Time t R 0 230 ns V DD =400V, I D =8A, R G =25Ω Turn-OFF Delay Time t D(OFF) 65 40 ns Fall-Time t F 70 50 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current I S 8 A Maximum Pulsed Drain-Source Diode Forward Current I SM 32 A Drain-Source Diode Forward Voltage V SD I S =8A, V GS =0V.4 V Reverse Recovery Time (Note ) t rr I S =8A, V GS =0V, 690 ns Reverse Recovery Charge (Note ) Q RR di F /dt=00a/µs 8.2 µc Note:. Pulse Test: Pulse width 300µs, Duty cycle 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD 4 of 9
TEST CIRCUITS AND WAVEFORMS DUT + R G V DS - L I SD V GS V DD Driver Same Type as DUT dv/dt controlled by R G I SD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms V GS (Driver ) Gate Pulse Width D= Gate Pulse Period 0V I SD (DUT) I FM, Body Diode Forward Current di/dt I RM Body Diode Reverse Current V DS (DUT) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD 5 of 9
TEST CIRCUITS AND WAVEFORMS(Cont.) Same Type as DUT V GS 2V 0V Q G 200nF 50kΩ 300nF V DS Q GS Q GD V GS 3mA DUT Gate Charge Test Circuit Charge Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms V DS BV DSS E AS = 2 2 LIAS BV DSS -V DD R G I D L BV DSS I AS 0V I D (t) t P DUT V DD V DD V DS (t) Unclamped Inductive Switching Test Circuit t P Time Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 6 of 9
TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD 7 of 9
TYPICAL CHARACTERISTICS (Cont.) UNISONIC TECHNOLOGIES CO., LTD 8 of 9
TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 9 of 9