a FEATURES AC PERFORMAE Gain Bandwidth Product: 8 MHz (Gain = 2) Fast Settling: ns to.1% for a V Step Slew Rate: 375 V/ s Stable at Gains of 2 or Greater Full Power Bandwidth: 6. MHz for V p-p DC PERFORMAE Input Offset Voltage: 1 mv max Input Offset Drift: 14 V/ C Input Voltage Noise: 9 nv/ Hz typ Open-Loop Gain: 9 V/mV into a 5 Load Output Current: ma min Quiescent Supply Current: 14 ma max APPLICATIONS Line Drivers DAC and ADC Buffers Video and Pulse Amplifiers Available in Plastic DIP, Hermetic Metal Can, Hermetic Cerdip, SOIC and LCC Packages and in Chip Form MIL-STD-883B Parts Available Available in Tape and Reel in Accordance with EIA-481A Standard PRODUCT DESCRIPTION The is a member of the Analog Devices family of wide bandwidth operational amplifiers. This device is fabricated using Analog Devices junction isolated complementary bipolar (CB) process. This process permits a combination of dc precision and wideband ac performance previously unobtainable in a monolithic op amp. In addition to its 8 MHz gain bandwidth, the offers extremely fast settling characteristics, typically settling to within.1% of final value in less than ns for a volt step. The also offers a low quiescent current of 13 ma, a high output current drive capability ( ma minimum), a low input voltage noise of 9 nv Hz and a low input offset voltage (1 mv maximum). The 375 V/µs slew rate of the, along with its 8 MHz gain bandwidth, ensures excellent performance in video and pulse amplifier applications. This amplifier is ideally suited for use in high frequency signal conditioning circuits and wide bandwidth active filters. The extremely rapid settling time of the makes this amplifier the preferred choice for data acquisition applications which require 12-bit accuracy. The REV. E Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Wideband, High Output Current, Fast Settling Op Amp CONNECTION DIAGRAMS Plastic DIP (N) Package LCC (E) Package and Cerdip (Q) Package 1 2 BALAE 3 INPUT 4 INPUT 5 14 13 BALAE 12 11 V OUTPUT V 6 9 7 TOP VIEW 8 = NO CONNECT TO-8 (H) Package 4 IN 5 6 IN 7 8 BALAE BALAE is also appropriate for other applications such as high speed DAC and ADC buffer amplifiers and other wide bandwidth circuitry. APPLICATION HIGHLIGHTS 1. The high slew rate and fast settling time of the make it ideal for DAC and ADC buffers amplifiers, lines drivers and all types of video instrumentation circuitry. 2. The is a precision amplifier. It offers accuracy to.1% or better and wide bandwidth; performance previously available only in hybrids. 3. Laser-wafer trimming reduces the input offset voltage of 1 mv max, thus eliminating the need for external offset nulling in many applications. 4. Full differential inputs provide outstanding performance in all standard high frequency op amp applications where the circuit gain will be 2 or greater. 5. The is an enhanced replacement for the HA2542. One Technology Way, P.O. Box 96, Norwood, MA 62-96, U.S.A. Tel: 781/329-47 World Wide Web Site: http://www.analog.com Fax: 781/326-873 Analog Devices, Inc., 9 3 2 1 19 11 12 13 = NO CONNECT 18 17 V S 16 OUTPUT 14 SOIC (R-16) Package BALAE 1 16 BALAE V BALAE 2 BALAE INPUT 3 14 V S INPUT OUTPUT 4 13 INPUT 5 12 OUTPUT INPUT V 6 11 7 8 TOP VIEW 9 TOP VIEW NOTE: CAN BE TIED TO V = NO CONNECT = NO CONNECT
SPECIFICATIONS (@ 25 C and V dc, unless otherwise noted) Model J/JR 1 K S 2 Conditions Min Typ Max Min Typ Max Min Typ Max Units INPUT OFFSET VOLTAGE 3.5 1.5.3 1..5 1.5 mv T MIN T MAX 2.5/3 1.5 3.5 mv Offset Drift 14 14 14 µv/ C INPUT BIAS CURRENT 4.2 8 3.5 5 4.2 8 µa T MIN T MAX 6 12 µa Input Offset Current.1.4.5.2.1.4 µa T MIN T MAX.5.3.6 µa INPUT CHARACTERISTICS Differential Mode Input Resistance kω Input Capacitance 2. 2. 2. pf INPUT VOLTAGE RANGE Common Mode V Common-Mode Rejection V CM = ± V 86 1 9 1 86 1 db T MIN T MAX 8 86 8 db INPUT VOLTAGE NOISE f = 1 khz 9 9 9 nv/ Hz Wideband Noise Hz to MHz 28 28 28 µv rms OPEN-LOOP GAIN V O = ± V R LOAD 5 Ω 4/3 9 5 9 4 9 V/mV T MIN T MAX / 25 V/mV OUTPUT CHARACTERISTICS Voltage R LOAD 5 Ω V Current V OUT = ± V ma Open Loop 5 5 5 Ω FREQUEY RESPONSE Gain Bandwidth Product V OUT = 9 mv 8 8 8 MHz Full Power Bandwidth 4 V O = V p-p R LOAD 5 Ω 4.7 6 4.7 6 4.7 6 MHz Rise Time 5 A VCL = 2 ns Overshoot 5 A VCL = 2 % Slew Rate 5 A VCL = 2 3 375 3 375 3 375 V/µs Settling Time 5 V Step to.1% 8 8 8 ns to.1% ns Differential Gain f = 4.4 MHz... % Differential Phase f = 4.4 MHz.35.35.35 Degree POWER SUPPLY Rated Performance ± ± ± V Operating Range 5 18 5 18 5 18 V Quiescent Current 13/14 14/16 13 14 13 14 ma T MIN T MAX 16/19.5 16 19 ma Power Supply Rejection Ratio V S = ± 5 V to ± 18 V 86 9 5 86 db T MIN T MAX 8 86 8 db TEMPERATURE RANGE Rated Performance 6 75 75 55 125 C PACKAGE OPTIONS Plastic (N-14) JN KN Cerdip (Q-14) JQ KQ SQ, SQ/883B SOIC (R-16) JR-16 Tape and Reel JR-16-REEL JR-16-REEL7 TO-8 (H-12A) JH KH SH LCC (E-A) SE/883B Chips JCHIPS SCHIPS NOTES 1 JR specifications differ from those of the JN, JQ and JH due to the thermal characteristics of the SOIC package. 2 Standard Military Drawing available 5962-89641xx 2A (SE/883B); XA (SH/883B); CA (SQ/883B). 3 Input offset voltage specifications are guaranteed after 5 minutes at T A = 25 C. 4 Full power bandwidth = slew rate/2 π V PEAK. 5 Refer to Figures 22 and 23. 6 S grade T MIN T MAX specifications are tested with automatic test equipment at T A = 55 C and T A = 125 C. All min and max specifications are guaranteed. Specifications shown in boldface are tested on all production units. Specifications subject to change without notice. 2 REV. E
ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage................................ ± 18 V Internal Power Dissipation 2 Plastic (N)................................. 1.3 W Cerdip (Q)................................. 1.1 W TO-8 (H).................................. 1.3 W SOIC (R).................................. 1.3 W LCC (E).................................. 1. W Input Voltage................................... ± V S Differential Input Voltage........................ ± 6 V Storage Temperature Range Q, H, E.......................... 65 C to C N, R............................. 65 C to 125 C Junction Temperature......................... 175 C Lead Temperature Range (Soldering 6 sec)........ 3 C NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Maximum internal power dissipation is specified so that T J does not exceed C at an ambient temperature of 25 C. Thermal Characteristics: θ JC θ JA θ SA Plastic Package 3 C/W C/W Cerdip Package 3 C/W 1 C/W 38 C/W TO-8 Package 3 C/W C/W 27 C/W 16-Lead SOIC Package 3 C/W C/W -Lead LCC Package 35 C/W C/W Recommended Heat Sink: Aavid Engineering #62B METALIZATION PHOTOGRAPH Contact factory for latest dimensions. Dimensions shown in inches and (mm). REV. E 3
Typical Characteristics (at 25 C and V S = V, unless otherwise noted) 3 INPUT COMMON-MODE RANGE Volts V IN 5 5 SUPPLY VOLTAGE Volts OUTPUT VOLTAGE SWING Volts V OUT 5 5 SUPPLY VOLTAGE Volts OUTPUT VOLTAGE SWING Volts p-p 25 5 V SUPPLIES 1k k LOAD RESISTAE Figure 1. Input Common-Mode Range vs. Supply Voltage Figure 2. Output Voltage Swing vs. Supply Voltage Figure 3. Output Voltage Swing vs. Load Resistance 18 5 QUIESCENT CURRENT ma 16 14 12 INPUT BIAS CURRENT A 4 3 OUTPUT IMPEDAE 1.1 5 SUPPLY VOLTAGE Volts 2 6 4 4 6 8 1 14 TEMPERATURE C.1 k k 1M M M FREQUEY Hz Figure 4. Quiescent Current vs. Supply Voltage Figure 5. Input Bias Current vs. Temperature Figure 6. Output Impedance vs. Frequency 18 3 85 QUIESCENT CURRENT ma 17 16 14 13 12 11 SHORT CIRCUIT CURRENT LIMIT ma 275 25 225 175 125 OUTPUT CURRENT OUTPUT CURRENT GAIN BANDWIDTH MHz 8 75 7 6 4 4 6 8 1 14 TEMPERATURE C 6 4 4 6 8 1 14 AMBIENT TEMPERATURE C 65 6 4 4 6 8 1 14 TEMPERATURE C Figure 7. Quiescent Current vs. Temperature Figure 8. Short-Circuit Current Limit vs. Temperature Figure 9. Gain Bandwidth Product vs. Temperature 4 REV. E
1 1 1 OPEN-LOOP GAIN db 8 6 4 5 LOAD 8 6 4 PHASE MARGIN Degrees OPEN-LOOP GAIN db 5 95 5 LOAD POWER SUPPLY REJECTION db 8 6 4 SUPPLY SUPPLY 1k k k 1M M M FREQUEY Hz Figure. Open-Loop Gain and Phase Margin vs. Frequency 9 5 SUPPLY VOLTAGE V Figure 11. Open-Loop Gain vs. Supply Voltage 1k k k 1M M M FREQUEY Hz Figure 12. Power Supply Rejection vs. Frequency CMR db 1 8 6 4 V S = V V CM = 1V p-p 25 C 1k k k 1M M M FREQUEY Hz Figure 13. Common-Mode Rejection vs. Frequency OUTPUT VOLTAGE Volts p-p 3 25 5 R L = 1kV 25 C V S = V 1M M M FREQUEY Hz Figure 14. Large Signal Frequency Response OUTPUT SWING FROM TO V 8 6 4 2 2 4 6 8.1%.1%.1%.1% 3 4 5 6 7 8 9 1 SETTLING TIME ns Figure. Output Swing and Error vs. Settling Time HARMONIC DISTORTION db 8 9 1 1 13 2ND HARMONIC 3RD HARMONIC 3V RMS R L = 1k INPUT VOLTAGE nv Hz 5 4 3 SLEW RATE V s 55 5 45 4 35 3 14 1k k k FREQUEY Hz Figure 16. Harmonic Distortion vs. Frequency 1k k k 1M M FREQUEY Hz Figure 17. Input Voltage vs. Frequency 25 6 4 4 6 8 1 14 TEMPERATURE C Figure 18. Slew Rate vs. Temperature REV. E 5
R F = 1k V S HP3314A FUTION GENERATOR OR EQUIVALENT R IN = 49.9 V OUT 332 Figure 19a. Inverting Amplifier Configuration (DIP Pinout) Figure 19b. Inverter Large Signal Pulse Response Figure 19c. Inverter Small Signal Pulse Response R1 = 5 R F = 5 V S HP3314A FUTION V IN GENERATOR OR EQUIVALENT 49.9 V OUT Figure a. Noninverting Amplifier Configuration (DIP Pinout) Figure b. Noninverting Large Signal Pulse Response Figure c. Noninverting Small Signal Pulse Response 6 REV. E
OFFSET NULLING The input offset voltage of the is very low for a high speed op amp, but if additional nulling is required, the circuit shown in Figure 21 can be used. SETTLING TIME Figures 22 and 24 show the settling performance of the in the test circuit shown in Figure 23. Settling time is defined as: The interval of time from the application of an ideal step function input until the closed-loop amplifier output has entered and remains within a specified error band. This definition encompasses the major components which comprise settling time. They include (1) propagation delay through the amplifier; (2) slewing time to approach the final output value; (3) the time of recovery from the overload associated with slewing and (4) linear settling to within the specified error band. Expressed in these terms, the measurement of settling time is obviously a challenge and needs to be done accurately to assure the user that the amplifier is worth consideration for the application. INPUT V S k OUTPUT Figure 21. Offset Nulling (DIP Pinout) R L DDD59 FLAT-TOP PULSE GENERATOR 5 1k 1k V V ERROR AMP ( ) HP6263 TEK 7A13 TEK 7A16 TEK 763 OSCILLOSCOPE FET PROBE TEK P61 Figure 23. Settling Time Test Circuit Figure 23 shows how measurement of the s.1% settling in ns was accomplished by amplifying the error signal from a false summing junction with a very high-speed proprietary hybrid error amplifier specially designed to enable testing of small settling errors. The device under test was driving a 3 Ω load. The input to the error amp is clamped in order to avoid possible problems associated with the overdrive recovery of the oscilloscope input amplifier. The error amp gains the error from the false summing junction by, and it contains a gain vernier to fine trim the gain. Figure 24 shows the long term stability of the settling characteristics of the output after a V step. There is no evidence of settling tails after the initial transient recovery time. The use of a junction isolated process, together with careful layout, avoids these problems by minimizing the effects of transistor isolation capacitance discharge and thermally induced shifts in circuit operating points. These problems do not occur even under high output current conditions. Figure 22..1% Settling Time REV. E 7
V S GROUNDING AND BYPASSING In designing practical circuits with the, the user must remember that whenever high frequencies are involved, some Figure 24. Settling Demonstrating No Settling Tails special precautions are in order. Circuits must be built with short interconnect leads. Large ground planes should be used whenever possible to provide a low resistance, low inductance circuit path, as well as minimizing the effects of high frequency coupling. Sockets should be avoided because the increased interlead capacitance can degrade bandwidth. Feedback resistors should be of low enough value to assure that the time constant formed with the circuit capacitances will not limit the amplifier performance. Resistor values of less than 5 kω are recommended. If a larger resistor must be used, a small (< pf) feedback capacitor connected in parallel with the feedback resistor, R F, may be used to compensate for these stray capacitances and optimize the dynamic performance of the amplifier in the particular application. Power supply leads should be bypassed to ground as close as possible to the amplifier pins. A 2.2 µf capacitor in parallel with a.1 µf ceramic disk capacitor is recommended. CAPACITIVE LOAD DRIVING ABILITY Like all wideband amplifiers, the is sensitive to capacitive loading. The is designed to drive capacitive loads of up to pf without degradation of its rated performance. Capacitive loads of greater than pf will decrease the dynamic performance of the part although instability should not occur unless the load exceeds pf. USING A HEAT SINK The draws less quiescent power than most precision high speed amplifiers and is specified for operation without a heat sink. However, when driving low impedance loads, the current to the load can be times the quiescent current. This will create a noticeable temperature rise. Improved performance can be achieved by using a small heat sink such as the Aavid Engineering #62B. TERMINATED LINE DRIVER The is optimized for high speed line driver applications. Figure 25 shows the driving a doubly terminated cable in a gain-of-2 follower configuration. The maintains a typical slew rate of 375 V/µs, which means it can drive a ± V, 6. MHz signal or a ± 3 V, 19.9 MHz signal. The termination resistor, R T, (when equal to the characteristic impedance of the cable) minimizes reflections from the far end of the cable. A back-termination resistor (R BT, also equal to the characteristic impedance of the cable) may be placed between the output and the cable in order to damp any stray signals caused by a mismatch between R T and the cable s characteristic impedance. This will result in a cleaner signal. With this circuit, the voltage on the line equals V IN because one half of V OUT is dropped across R BT. The has ± ma minimum output current and, therefore, can drive ± 5 V into a 5 Ω cable. The feedback resistors, R1 and R2, must be chosen carefully. Large value resistors are desirable in order to limit the amount of current drawn from the amplifier output. But large resistors can cause amplifier instability because the parallel resistance R1 R2 combines with the input capacitance (typically 2 5 pf) to create an additional pole. Also, the voltage noise of the is equivalent to a 5 kω resistor, so large resistors can significantly increase the system noise. Resistor values of 1 kω or 2 kω are recommended. If termination is not used, cables appear as capacitive loads and can be decoupled from the by a resistor in series with the output. V IN TERMINATION RESISTOR FOR INPUT SIGNAL R ST 5 OR 75 CABLE R T R1 R2 R T = R ST = CABLE CHARACTERISTIC IMPEDAE Figure 25. Line Driver Configuration 8 REV. E
OVERDRIVE RECOVERY Figure 26 shows the overdrive recovery capability of the. Typical recovery time is 8 ns from negative overdrive and 4 ns from positive overdrive. HP3314A PULSE GENERATOR OR EQUIVALENT 1 s, 1V SQUARE WAVE INPUT 5 V S OUTPUT 1k Figure 27. Overdrive Recovery Test Circuit Figure 26. Overdrive Recovery REV. E 9
OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 14-Lead Plastic Package (N-14) 14-Lead Cerdip Package (Q-14) PIN 1.2 (5.33) MAX.16 (4.6).1 (2.93).795 (.19).725 (18.42) 14 8 1 7. (2.54).22 (.558).14 (.356).7 (1.77).45 (1.).28 (7.11).24 (6.).6 (1.52). (.38).13 (3.3) MIN SEATING PLANE.325 (8.25).3 (7.62). (.381).8 (.4).195 (4.95).1 (2.93).5 (.13) MIN.98 (2.49) MAX 14. (5.8) MAX. (5.8).125 (3.18).23 (.58).14 (.36) 1 7 PIN 1.785 (19.94) MAX. (2.54) 8.7 (1.78).3 (.76).3 (7.87).2 (5.59).6 (1.52). (.38). (3.81) MIN SEATING PLANE.3 (8.13).29 (7.37). (.38).8 (.) C1195c 3/ (rev. E) 16-Lead SOIC Package (R-16) -Terminal Leadless Ceramic Chip Carrier Package (E-A) PIN 1 16 9.2992 (7.6).2914 (7.4) 1.4133 (.5).3977 (.).5 (1.27) 8.43 (2.65).926 (2.35).4193 (.65).3937 (.).291 (.74) 45.98 (.25).358 (9.9).358 (9.9).342 (8.69) MAX SQ SQ. (2.54).64 (1.63).88 (2.24).54 (1.37).95 (2.41).75 (1.9).11 (.28).7 (.18) R TYP.75 (1.91) REF. (5.8).75 (1.91) REF.55 (1.4).45 (1.14). (2.54). (.38) MIN.28 (.71).22 (.56) 19 3 18 4 1 BOTTOM VIEW 14 8 13 9 45 TYP. (3.81).5 (1.27).118 (.3).4 (.).192 (.49).138 (.35) SEATING PLANE.125 (.32).91 (.23) 8.5 (1.27).7 (.4) 12-Lead Metal Can Package (TO-8 Style) REFEREE PLANE.181 (4.6).148 (3.76).375 (9.53) MIN.5 (1.27) MAX. (5.8).6 (.62).592 (.4).555 (14.).545 (13.84).4 (1.2) MAX.45 (1.14). (.).4 (.16).19 (.48).16 (.41).21 (.53).16 (.41) BASE & SEATING PLANE 7 8 9 6 5 11 4 3 2.37 (.94).26 (.66) 12 1. (2.54). (5.8).36 (.91).26 (.66) PRINTED IN U.S.A. REV. E