FDP5N40 / FDPF5N40 N-Channel MOSFET 400V, 5A, 0.3Ω Features R DS(on) = 0.24Ω ( Typ.)@ V GS = 0V, I D = 7.5A Low Gate Charge ( Typ. 28nC) Low C rss ( Typ. 7pF) Fast Switching 00% Avalanche Tested Improved dv/dt Capability RoHS Compliant Description October 2008 UniFET TM tm These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G D S TO-220 FDP Series G D S TO-220F FDPF Series G S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted* Symbol Parameter FDP5N40 FDPF5N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V I D Drain Current -Continuous (T C = 25 o C) 5 5* -Continuous (T C = 00 o C) 9 9* A I DM Drain Current - Pulsed (Note ) 60 60* A E AS Single Pulsed Avalanche Energy (Note 2) 73 mj I AR Avalanche Current (Note ) 5 A E AR Repetitive Avalanche Energy (Note ) 7 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 5 V/ns P D Power Dissipation (T C = 25 o C) 70 40 W - Derate above 25 o C.45 0.3 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP5N40 FDPF5N40 Units R θjc Thermal Resistance, Junction to Case 0.7 3.0 R θcs Thermal Resistance, Case to Sink Typ. 0.5 - R θja Thermal Resistance, Junction to Ambient 62.5 62.5 o C/W 2008 Fairchild Semiconductor Corporation
Package Marking and Ordering Information T C = 25 o C unless otherwise noted Device Marking Device Package Reel Size Tape Width Quantity FDP5N40 FDP5N40 TO-220 - - 50 FDPF5N40 FDPF5N40 TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250μA, V GS = 0V, T J = 25 o C 400 - - V ΔBV DSS ΔT J On Characteristics Breakdown Voltage Temperature Coefficient Dynamic Characteristics I D = 250μA, Referenced to 25 o C - 0.5 - V/ o C V I DSS Zero Gate Voltage Drain Current DS = 400V, V GS = 0V - - μa V DS = 320V, T C = 25 o C - - 0 I GSS Gate to Body Leakage Current V GS = ±30V, V DS = 0V - - ±00 na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250μA 3.0-5.0 V R DS(on) Static Drain to Source On Resistance V GS = 0V, I D = 7.5A - 0.24 0.3 Ω g FS Forward Transconductance V DS = 20V, I D = 7.5A (Note 4) - 5.3 - S C iss Input Capacitance - 30 750 pf V DS = 25V, V GS = 0V C oss Output Capacitance - 20 280 pf f = MHz C rss Reverse Transfer Capacitance - 7 25 pf Q g(tot) Total Gate Charge at 0V - 28 36 nc Q gs Gate to Source Gate Charge V DS = 320V, I D = 5A - 8 - nc Q gd Gate to Drain Miller Charge V GS = 0V (Note 4, 5) - 2 - nc Switching Characteristics t d(on) Turn-On Delay Time - 26 62 ns t r Turn-On Rise Time V DD = 200V, I D = 5A - 55 20 ns t d(off) Turn-Off Delay Time R G = 25Ω - 72 54 ns t f Turn-Off Fall Time (Note 4, 5) - 40 90 ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 5 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 60 A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 5A - -.4 V t rr Reverse Recovery Time V GS = 0V, I SD = 5A - 333 - ns Q rr Reverse Recovery Charge di F /dt = 00A/μs (Note 4) - 3.24 - μc Notes: : Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 6.5mH, I AS = 5A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3: I SD 5A, di/dt 200A/μs, V DD BV DSS, Starting T J = 25 C 4: Pulse Test: Pulse width 300μs, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics 2
Typical Performance Characteristics ID,Drain Current[A] Figure. On-Region Characteristics 40 0 V GS = 5.0V 0.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V. 250μs Pulse Test 2. T C = 25 o C 0.2 0. 0 V DS,Drain-Source Voltage[V] Figure 2. Transfer Characteristics. V DS = 20V 2. 250μs Pulse Test 4 5 6 7 8 V GS,Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.50 ID,Drain Current[A] 60 0 80 50 o C 25 o C -55 o C RDS(ON) [Ω], Drain-Source On-Resistance 0.45 0.40 0.35 0.30 0.25 V GS = 0V V GS = 20V *Note: T J = 25 o C 0.20 0 0 20 30 40 I D, Drain Current [A] IS, Reverse Drain Current [A] 0 50 o C 25 o C. V GS = 0V 2. 250μs Pulse Test 0. 0.2 0.4 0.6 0.8.0.2.3 V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics 3000 2000 000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note:. V GS = 0V 2. f = MHz C iss C oss VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics 0 8 6 4 2 V DS = 00V V DS = 200V V DS = 320V C rss 0 0. 0 V DS, Drain-Source Voltage [V] *Note: I D = 5A 0 30 0 5 0 5 20 25 30 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature.2..0 0.9. V GS = 0V 2. I D = 250μA 0.8-75 -25 25 75 25 75 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area - FDP5N40 00 00μs 30μs RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0.5.0 0.5. V GS = 0V 2. I D = 7.5A 0.0-75 -25 25 75 25 75 T J, Junction Temperature [ o C] Figure 0. Maximum Safe Operating Area 6 ID, Drain Current [A] 0 0. Operation in This Area is Limited by R DS(on) ms 0ms DC. T C = 25 o C ID, Drain Current [A] 2 8 4 2. T J = 50 o C 3. Single Pulse 0.0 0 00 V DS, Drain-Source Voltage [V] 800 0 25 50 75 00 25 50 T C, Case Temperature [ o C] Figure. Transient Thermal Response Curve - FDP5N40 Thermal Response [Z θjc ] 0. 0.5 0.2 0. 0.05 0.02 0.0 0.0. Z θjc (t) = 0.7 o C/W Max. Single pulse 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) 0.002 0-5 0-4 0-3 0-2 0-0 0 0 0 2 Rectangular Pulse Duration [sec] P DM t t 2 4
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5
Peak Diode Recovery dv/dt Test Circuit & Waveforms D U T + I S D V D S _ L D r iv e r R G S a m e T y p e a s D U T V G S d v / d t c o n t r o lle d b y R G I S D c o n t r o lle d b y p u ls e p e r io d V D D V G S ( D riv e r ) G a t e P u ls e W id t h D = -------------------------- G a t e P u ls e P e r io d 0 V I F M, B o d y D io d e F o r w a r d C u r r e n t I S D ( D U T ) d i/ d t I R M B o d y D io d e R e v e r s e C u r r e n t V D S ( D U T ) B o d y D io d e R e c o v e r y d v / d t V S D V D D B o d y D io d e F o r w a r d V o lt a g e D r o p 6
Mechanical Dimensions (.70) 3.08 ±0.20 9.20 ±0.20.30 ±0.0 (.46) (.00).27 ±0.0 9.90 ±0.20 (8.70) ø3.60 ±0.0 (45 ) (3.00) (3.70).52 ±0.0 TO-220 5.90 ±0.20 2.80 ±0.0 0.08 ±0.30 8.95MAX. 4.50 ±0.20.30 +0.0 0.05 2.54TYP [2.54 ±0.20] 0.80 ±0.0 2.54TYP [2.54 ±0.20] 0.50 +0.0 0.05 2.40 ±0.20 0.00 ±0.20 7
Mechanical Dimensions 5.80 ±0.20 3.30 ±0.0 TO-220F 0.6 ±0.20 ø3.8 ±0.0 2.54 ±0.20 (7.00) (0.70) 6.68 ±0.20 (.00x45 ) 5.87 ±0.20 9.75 ±0.30 MAX.47 0.80 ±0.0 (30 ) 0.35 ±0.0 # 0.50 +0.0 0.05 2.76 ±0.20 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 Dimensions in Millimeters 8
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