N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G D S TO-247-3L TO-3P-3L Applications Switching application D Power Management for Inverter Systems. G N-Channel MOSFET S Ordering and Marking Information W HY48 ÿ YYXXXJWW G A HY48 ÿ YYXXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 1% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. HOOYI defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 141225
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 8 V GSS Gate-Source Voltage ±25 T J Maximum Junction Temperature 175 C T STG Storage Temperature Range -55 to 175 C I S Diode Continuous Forward Current T C =25 C 2 A Mounted on Large Heat Sink I DM Pulsed Drain Current * T C =25 C 8** A I D P D Continuous Drain Current Maximum Power Dissipation T C =25 C 2 T C =1 C 153 T C =25 C 397 T C =1 C 199 R θjc Thermal Resistance-Junction to Case.38 R θja Thermal Resistance-Junction to Ambient 4 Avalanche Ratings E AS Avalanche Energy, Single Pulsed L=.5mH 1736*** mj Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=64V Electrical Characteristics (T C = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Static Characteristics HY48 Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25µA 8 - - V I DSS Zero Gate Voltage Drain Current V DS =8V, V GS =V - - 1 T J =85 C - - 1 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25µA 2. 3. 4. V I GSS Gate Leakage Current V GS =±25V, V DS =V - - ±1 na R DS(ON) * Drain-Source On-state Resistance V GS =1V, I DS =1A - 2.9 3.5 mω Diode Characteristics V SD * Diode Forward Voltage I SD =1A, V GS =V -.8 1.2 V t rr Reverse Recovery Time - 3 - ns I SD =1A, dl SD /dt=1a/µs Reverse Recovery Charge - 52 - nc Q rr V A W C/W Unit µa 2
Electrical Characteristics (Cont.) (T C = 25 C Unless Otherwise Noted) HY48 Symbol Parameter Test Conditions Unit Min. Typ. Max. Dynamic Characteristics R G Gate Resistance V GS =V,V DS =V,F=1MHz - 3.2 - Ω C iss Input Capacitance V GS =V, - 7398 - C oss Output Capacitance V DS =25V, - 129 - Reverse Transfer Capacitance Frequency=1.MHz - 65 - C rss t d(on) Turn-on Delay Time - 28 - T r Turn-on Rise Time V DD =4V, R G =6 Ω, - 18 - I DS =1A, V GS =1V, t d(off) Turn-off Delay Time - 42 - T f Turn-off Fall Time - 54 - Gate Charge Characteristics Q g Total Gate Charge - 195 - Q gs Gate-Source Charge V DS =64V, V GS =1V, I DS =1A - 31 - Gate-Drain Charge - 75 - Q gd Note * : Pulse test ; pulse width 3µs, duty cycle 2%. pf ns nc 3
Typical Operating Characteristics Power Dissipation Drain Current 44 21 Ptot - Power (W) 36 28 2 12 ID - Drain Current (A) 18 15 12 9 6 limited by package 4 T C =25 o C 2 4 6 8 1 12 14 16 18 2 TC -Case Temperature ( C) 3 T C =25 o C,V G =1V 2 4 6 8 1 12 14 16 18 2 TC -Case Temperature ( C) 1 Safe Operation Area ID - Drain Current (A) 1 1 Rds(on) Limit 1us 1ms 1ms DC 1.1 1 1 1 4 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient.1.1.1.1 Single.2.5.1.2 Duty =.5 Mounted on minimum pad R θja : 4 o C/W.1.1.1.1.1 1 1 Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-SourceOn Resistance ID - Drain Current (A) 32 28 24 2 16 12 8 4 V GS = 5.5,6,7,8,9,1V 5V 4.5V 4V RDS(ON) - On - Resistance (mw) 5. 4.5 4. 3.5 3. 2.5 2. V GS =1V. 1. 2. 3. 4. 5. 6. VDS - Drain - Source Voltage (V) 1.5 5 1 15 2 25 ID - Drain Current (A) Gate-SourceOn Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mw) 14 12 1 8 6 4 2 I DS =1A Normalized Threshold Voltage 1.6 1.4 1.2 1..8.6.4 I DS =25µA 3 4 5 6 7 8 9 1 VGS - Gate - Source Voltage (V).2-5 -25 25 5 75 1 125 15 175 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-SourceOn Resistance Source-Drain Diode Forward 2.4 2.2 2. V GS = 1V I DS = 1A 2 1 NormalizedOn Resistance 1.8 1.6 1.4 1.2 1..8.6.4 R ON @T j =25 o C: 2.9mΩ.2-5 -25 25 5 75 1 125 15 175 Tj - Junction Temperature ( C) IS - Source Current (A) 1 1 T j =175 o C T j =25 o C.1..2.4.6.8 1. 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 12 15 Frequency=1MHz 1 9 V DS = 64V I DS = 1A C - Capacitance (pf) 9 75 6 45 3 15 Crss Ciss Coss VGS - Gate-source Voltage (V) 8 7 6 5 4 3 2 1 8 16 24 32 4 VDS - Drain - Source Voltage (V) 4 8 12 16 2 QG - Gate Charge (nc) 6
Avalanche Test Circuit and Waveforms V DS L t p V DSX(SUS) DUT V DS I AS R G V DD V DD tp I L.1W E AS t AV Avalanche Test Circuit and Waveforms V DS DUT R D V DS 9% V GS R G V DD 1% tp V GS t d(on) t r t d(off) t f 7
Package Information TO-247-3L SYMBOL mm MIN NOM MAX A 4.9 5. 5.1 A1 2.31 2.41 2.51 A2 1.9 2. 2.1 b 1.16 1.21 1.26 b2 1.96 2.1 2.6 b4 2.96 3.1 3.6 c.59.61.66 D 2.9 21. 21.1 D1 16.25 16.55 16.85 D2 1.5 1.2 1.35 E 15.7 15.8 15.9 E1 13.1 13.3 13.5 E2 4.9 5. 5.1 E3 2.4 2.5 2.6 e h.5 5.44BSC.1.15 L 19.8 19.92 2.1 L1 - - 4.3 ΦP 3.5 3.6 3.7 ΦP1 - - 7.3 ΦP2 2.4 2.5 2.6 Q 5.6 5.8 6. S R T 9.8 6.15BSC.5REF - 1.2 T1 T2 T3 U 6. 1.65REF 8.REF 12.8REF - 6.4 θ1 6 7 8 θ2 4 5 6 θ3 1-1.5 θ4 14 15 16 8
TO-3P-3L SYMBOL mm MIN NOM MAX A 4.6 4.8 5. A1 1.4 1.5 1.6 A2 1.33 1.38 1.43 b.8 1. 1.2 b1 2.8 3. 3.2 b2 1.8 2. 2.2 c.5.6.7 D 19.75 19.9 2.5 D1 13.7 13.9 14.1 D2 12.9 REF E 15.4 15.6 15.8 E1 13.4 13.6 13.8 E2 9.4 9.6 9.8 e 5.45 TYP G 4.6 4.8 5. H 4.3 4.5 4.7 H1 23.2 23.4 23.6 h.5.1.15 L 7.4 TYP L1 9. TYP L2 11. TYP L3 1. REF P 6.9 7. 7.1 P1 3.2 REF P2 3.5 REF P3 1.4 1.5 1.6 R.5 REF Q 5. REF Q1 12.56 12.76 12.96 U 7.8 8 8.2 θ1 5 7 9 θ2 1 3 5 θ3 6 REF 9
Devices Per Unit Package Type Unit Quantity TO-247-3L Tube 3 TO-3P-3L Tube 3 Classification Profile 1
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 1 C 15 C 6-12 seconds 15 C 2 C 6-12 seconds Average ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 183 C 6-15 seconds 217 C 6-15 seconds See Classification Temp in table 1 See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B12 5 Sec, 245 C HOLT JESD-22, A18 1 Hrs, Bias @ 125 C PCT JESD-22, A12 168 Hrs, 1%RH, 2atm, 121 C TCT JESD-22, A14 5 Cycles, -65 C~15 C 11