Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5, R DS(ON) =38mΩ(Typ.) @ = V R DS(ON) =55mΩ(Typ.) @ = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) D DD2 D2 S GS2 G2 Top View of SOP 8 (8) (7) (6) (5) D D D2 D2 pplications Power Management in DC/DC Converter, DC/C Inverter Systems. (2) G (4) G2 Ordering and Marking Information S S2 () (3) N-Channel MOSFET PM9946 PM9946 K : PM9946 XXXXX ssembly Material Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 50 o C Handling Code TR : Tape & Reel ssembly Material G : Halogen and Lead Free Device XXXXX - Date Code Note: NPEC lead-free products contain molding compounds/die attach materials and 0% matte tin plate termination finish; which are fully compliant with RoHS. NPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. NPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 500ppm by weight). NPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
bsolute Maximum Ratings (T = 25 C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage 60 S Gate-Source Voltage ±25 V I D * Continuous Drain Current 5 =V I DM * Pulsed Drain Current 20 I S * Diode Continuous Forward Current 2.5 T J Maximum Junction Temperature 50 T STG Storage Temperature Range -55 to 50 C P D * Maximum Power Dissipation T =25 C 2 T =0 C 0.8 W R θj * Thermal Resistance-Junction to mbient 62.5 C/W Note : *Surface Mounted on in 2 pad area, t sec. Electrical Characteristics (T = 25 C unless otherwise noted) Symbol Parameter Test Conditions PM9946K Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage =0V, I DS =250µ 60 - - V I DSS V DS =48V, =0V - - Zero Gate Voltage Drain Current µ T J =85 C - - 30 (th) Gate Threshold Voltage V DS =, I DS =250µ 2 3 V I GSS Gate Leakage Current =±20V, V DS =0V - - ±0 n a R DS(ON) a V SD =V, I DS =5-38 52 Drain-Source On-state Resistance mω =4.5V, I DS =4-55 75 Diode Forward Voltage I SD =2, =0V - 0.8. V Gate Charge Characteristics b Q g Total Gate Charge - 9 27 Q gs Gate-Source Charge V DS =30V, =V, I DS =5-3.6 - Gate-Drain Charge - 5 - Q gd nc 2
Electrical Characteristics (Cont.) (T = 25 C unless otherwise noted) Symbol Parameter Test Conditions Dynamic Characteristics b PM9946K Min. Typ. Max. R G Gate Resistance =0V,V DS =0V,F=MHz -. - Ω C iss Input Capacitance =0V, - 970 - C oss Output Capacitance V DS =30V, - 70 - Reverse Transfer Capacitance Frequency=.0MHz - 45 - C rss t d(on) Turn-On Delay Time - 9 7 T r Turn-On Rise Time V DD =30V, R L =30Ω, - 8 5 I DS =, V GEN =V, t d(off) Turn-Off Delay Time R - 25 46 G =6Ω Turn-Off Fall Time - 5 T f t rr Reverse Recovery Time - 24 - ns I SD =5, di SD /dt=0/µs Reverse Recovery Charge - 26 - nc Q rr Note a : Pulse test ; pulse width 300µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Unit pf ns 3
Typical Operating Characteristics Power Dissipation Drain Current 2.5 6 2.0 5 P tot - Power (W).5.0 I D - Drain Current () 4 3 2 0.5 0.0 0 20 40 60 80 0 20 40 60 T =25 o C,V G =V 0 0 20 40 60 80 0 20 40 60 - Junction Temperature ( C) - Junction Temperature ( C) I D - Drain Current () Safe Operation rea 50 0. Rds(on) Limit 300µs ms ms 0ms s DC T =25 o C 0.0 0.0 0. 0 300 V DS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance 2 0. 0.0 Thermal Transient Impedance 0.0 0.02 0.05 Single Pulse 0. Duty = 0.5 0.2 Mounted on in 2 pad R θj :62.5 o C/W E-3 E-4 E-3 0.0 0. 30 Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) 20 8 Output Characteristics = 4.5,5,6,7,8,9,V 0 90 Drain-Source On Resistance I D - Drain Current () 6 4 2 4V 8 6 4 3.5V 2 3V 0 0.0 0.5.0.5 2.0 2.5 3.0 R DS(ON) - On - Resistance (mω) 80 70 60 50 40 30 20 = 4.5V =V 0 4 8 2 6 20 V DS - Drain-Source Voltage (V) I D - Drain Current () Drain-Source On Resistance Gate Threshold Voltage 80 75 I D =5.8.6 I DS =250µ R DS(ON) - On - Resistance (mω) 70 65 60 55 50 45 40 35 Normalized Threshold Voltage.4.2.0 0.8 0.6 0.4 0.2 30 2 3 4 5 6 7 8 9 - Gate - Source Voltage (V) 0.0-50 -25 0 25 50 75 0 25 50 - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.0.8 = V I DS = 5 20 Normalized On Resistance.6.4.2.0 0.8 0.6 I S - Source Current () =50 o C =25 o C 0.4 R ON @ =25 o C: 38mΩ 0.2-50 -25 0 25 50 75 0 25 50 0. 0.0 0.3 0.6 0.9.2.5 - Junction Temperature ( C) V SD - Source - Drain Voltage (V) C - Capacitance (pf) Capacitance 400 Frequency=MHz 200 Ciss 00 800 600 400 200 Coss Crss 0 0 5 5 20 25 30 - Gate - source Voltage (V) 9 8 7 6 5 4 3 2 V DS =30V I DS = 5 Gate Charge 0 0 4 8 2 6 20 V DS - Drain - Source Voltage (V) Q G - Gate Charge (nc) 6
Package Information SOP-8 D SEE VIEW E E h X 45 e b c 2 VIEW L 0.25 GUGE PLNE SETING PLNE S Y M SOP-8 B O L MIN. MX. MIN..75 0. 0.25 0.004 MX. 0.069 0.0 2.25 0.049 b 0.3 0.5 0.02 0.020 c 0.7 0.25 0.007 0.0 D 4.80 5.00 0.89 0.97 E 5.80 6.20 0.228 0.244 E 3.80 4.00 0.50 0.57 e.27 BSC 0.050 BSC h 0.25 0.50 0.0 0.020 L 0.40.27 0.06 0.050 0 0 8 0 8 MILLIMETERS INCHES Note:. Follow JEDEC MS-02. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed mil per side. 7
Carrier Tape & Reel Dimensions OD0 P0 P2 P H E OD B T B0 W F K0 B 0 SECTION - SECTION B-B d T pplication H T C d D W E F 330.0 2.4+2.00 3.0+0.50 50 MIN..5 MIN. 20.2 MIN. 2.0 0.30.75 0. 5.5 0.05 2.00-0.00-0.20 SOP-8 P0 P P2 D0 D T 0 B0 K0 4.0 0. 8.0 0. 2.0 0.05.5+0. -0.00.5 MIN. 0.6+0.00-0.40 6.40 0.20 5.20 0.20 2. 0.20 (mm) Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel 2500 8
Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile 9
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 0 C 50 C 60-20 seconds 50 C 200 C 60-20 seconds verage ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 83 C 60-50 seconds 27 C 60-50 seconds See Classification Temp in table See Classification Temp in table 2 20** seconds 30** seconds verage ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 350 <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm 3 350-2000 Volume mm 3 >2000 <.6 mm 260 C 260 C 260 C.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERBILITY JESD-22, B2 5 Sec, 245 C HOLT JESD-22, 8 00 Hrs, Bias @ 25 C PCT JESD-22, 2 68 Hrs, 0%RH, 2atm, 2 C TCT JESD-22, 4 500 Cycles, -65 C~50 C
Customer Service npec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No., Lane 28, Sec 2 Jhongsing Rd., Sindain City, Taipei County 2346, Taiwan Tel : 886-2-29-3838 Fax : 886-2-297-3838