ㅊ General Description MDU1511 Single N-channel Trench MOSFET 3V, 1.A, 2.mΩ The MDU1511 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1511 is suitable device for DC/DC Converter and general purpose applications. D D D D D D D D S S S G G S S S Features = 3V = 1A @ = 1V R DS(ON) < 2. mω @ = 1V < 3.3 mω @ =.5V 1% UIL Tested 1% Rg Tested G D MDU1511 Single N-Channel Trench MOSFET 3V PowerDFN56 S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S 3 V Gate-Source Voltage S ±2 V T C=25 o C 1. Continuous Drain Current (1) Power Dissipation T C=7 o C 9. T A=25 o C 36.1 (3) T A=7 o C 28.8 (3) Pulsed Drain Current M 1 A T C=25 o C 78.1 T C=7 o C 5. P D T A=25 o C 5.5 (3) T A=7 o C 3.5 (3) Single Pulse Avalanche Energy (2) E AS 287 mj Junction and Storage Temperature Range T J, T stg -55~15 A W o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) Steady State R θja 22.7 Thermal Resistance, Junction-to-Case Steady State R θjc 1.6 o C/W May. 211. Version 1.2 1
Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status MDU1511RH -55~15 o C PowerDFN56 Tape & Reel 3 units Halogen Free Electrical Characteristics (T J = 25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25µA, = V 3 - - Gate Threshold Voltage (th) =, = 25µA 1.3 1.8 2.7 V Drain Cut-Off Current SS = 3V, = V - - 1 T J=55 o C - - 5 µa Gate Leakage Current I GSS = ±2V, = V - - ±.1 = 1V, = 28A - 2. 2. Drain-Source ON Resistance R DS(ON) T J=125 o C - 2.9 3.5 mω =.5V, = 2A - 2.7 3.3 Forward Transconductance g fs = 5V, = 1A - 5 - S Dynamic Characteristics Total Gate Charge Q g(1v) 38.8 51.8 6.8 Total Gate Charge Q g(.5v) = 15V, = 28A, 18.7 25. 31.3 Gate-Source Charge Q gs = 1V - 9.9 - nc Gate-Drain Charge Q gd - 9. - Input Capacitance C iss 251 337 18 Reverse Transfer Capacitance C rss = 15V, = V, f = 1.MHz 26 328 1 pf Output Capacitance C oss 9 653 817 Turn-On Delay Time t d(on) - 11.2 - Rise Time t r = 1V, = 15V, - 23.2 - Turn-Off Delay Time t d(off) = 28A, R G = 3.Ω - 5.6 - ns Fall Time t f - 18.6 - Gate Resistance Rg f=1 MHz - 1. 2. Ω Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V SD I S = 28A, = V -.8 1.1 V Body Diode Reverse Recovery Time t rr I F = 28A, dl/dt = 1A/µs - 33.8 5.7 ns Body Diode Reverse Recovery Charge Q rr - 22.3 33.5 nc MDU1511 Single N-Channel Trench MOSFET 3V Note : 1. Surface mounted FR- board by JEDEC (jesd51-7) 2. E AS is tested at starting Tj = 25, L =.1mH, I AS = 2.A, V DD = 27V, = 1V 3. T < 1sec. May. 211. Version 1.2 2
R DS(ON), (Normalized) Drain-Source On-Resistance 5 = 1V 1.8 1.6 1. 1.2 1..8 3 2 1.V 5.V 8.V..5 1. 1.5 2. Fig.1 On-Region Characteristics Notes : 1. = 1 V 2. = 28. A, Drain-Source Voltage [V] 3.V Drain-Source On-Resistance [mω] R DS(ON) [mω ], Drain-Source On-Resistance 3 2 1 3 25 2 15 1 5 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage T A = 25 =.5V = 1V 1 2 3 5 Notes : = 28.A MDU1511 Single N-Channel Trench MOSFET 3V.6-5 -25 25 5 75 1 125 15 T J, Junction Temperature [ o C] 2 3 5 6 7 8 9 1, Gate to Source Volatge [V] Fig.3 On-Resistance Variation with Temperature Fig. On-Resistance Variation with Gate to Source Voltage 2 16 Notes : = 5V 1 12 8 T A =25 -I S [A] 1 1 25 1 2 3 5, Gate-Source Voltage [V].1.3..5.6.7.8.9 1. -V SD [V] Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature May. 211. Version 1.2 3
, Gate-Source Voltage [V] 1 8 6 2 1 3 1 2 1 1 1 1-1 1-2 Note : I = 28A D = 15V 5 1 15 2 25 3 35 5 5 55 Fig.7 Gate Charge Characteristics Operation in This Area is Limited by R DS(on) Q G, Total Gate Charge [nc] 1 ms 1 s 1 s 1-1 1 1 1 1 2 DC Single Pulse T J =Max Rated T C =25, Drain-Source Voltage [V] 1 ms Capacitance [pf] 35 3 25 2 15 1 5 C rss C oss C iss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ; 1. = V 2. f = 1 MHz 5 1 15 2 25 15 1 13 12 11 1 9 8 7 6 5 3 2 1, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 25 5 75 1 125 15 T A, Case Temperature [ ] MDU1511 Single N-Channel Trench MOSFET 3V Fig.9 Maximum Safe Operating Area Fig.1 Maximum Drain Current Vs. Case Temperature 1 1 Z θ JA (t), Thermal Response D=.5 1 1-1 1-2.2.1.5.2.1 single pulse Notes : Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C 1-3 1-1 -3 1-2 1-1 1 1 1 1 2 1 3 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve May. 211. Version 1.2
Package Dimension PowerDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified MILLIMETERS Dimension Min Max A.9 1.1 b.33.51 C.2.3 D1.5 5.1 D2 -.22 E 5.9 6.3 E1 5.5 6.1 E2 -.3 e 1.27BSC H.1.71 K.2 - L.51.71 MDU1511 Single N-Channel Trench MOSFET 3V α 12 May. 211. Version 1.2 5
MDU1511 Single N-Channel Trench MOSFET 3V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. May. 211. Version 1.2 6