MJE1502 (NPN), MJE150 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as highfrequency drivers in audio amplifiers. Features High DC Current Gain High Current Gain Bandwidth Product TO220 Compact Package Epoxy Meets UL 94 V0 @ 25 in These Devices are PbFree and are RoHS Compliant* 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 250 Vdc CollectorBase Voltage V CB 250 Vdc EmitterBase Voltage V EB 5.0 Vdc Collector Current Continuous I C 8.0 Adc Collector Current Peak I CM 16 Adc Base Current I B 2.0 Adc Total Power Dissipation @ T C = 25 C Derate above 25 C Total Power Dissipation @ T A = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D 50 0.40 P D 2.0 6 W W/ C W W/ C T J, T stg 65 to + 150 C ESD Human Body Model HBM B V ESD Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS 1 BASE 1 2 4 COMPLEMENTARY COLLECTOR 2, 4 EMITTER 1 BASE TO220 CASE 221A STYLE 1 COLLECTOR 2, 4 EMITTER MARKING DIAGRAM MJE150xG AYWW Thermal Resistance, JunctiontoCase Thermal Resistance, JunctiontoAmbient Characteristic Symbol Max Unit R JC 2.5 R JA 62.5 C/W C/W MJE150x = Specific Device Code x = 2 or A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping MJE1502G MJE150G TO220 (PbFree) TO220 (PbFree) 50 Units/Rail 50 Units/Rail Semiconductor Components Industries, LLC, 2014 December, 2014 Rev. 6 1 Publication Order Number: MJE1502/D
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) (I C = madc, I B = 0) Collector Cutoff Current (V CB = 250 Vdc, I E = 0) Emitter Cutoff Current (V BE = 5.0 Vdc, I C = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (I C = 0.5 Adc, V CE = 5.0 Vdc) (I C = Adc, V CE = 5.0 Vdc) (I C = 2.0 Adc, V CE = 5.0 Vdc) CollectorEmitter Saturation Voltage (I C = Adc, I B = Adc) BaseEmitter On Voltage (I C = Adc, V CE = 5.0 Vdc) V CEO(sus) 250 I CBO I EBO h FE 70 50 V CE(sat) 0.5 V BE(on) Vdc Adc Adc Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 2) (I C = 500 madc, V CE = Vdc, f test = MHz) f T 0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 00 s, Duty Cycle 2.0%. 2. f T = h fe f test. MHz 2
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.7 0.5 0. 0.2 D = 0.5 0.2 P Z JC(t) = r(t) R (pk) JC 0.07 0.05 R JC = 2.5 C/W MAX 0.05 D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN 0.0 t 1 READ TIME AT t 1 t 0.02 2 T J(pk) - T C = P (pk) Z JC(t) SINGLE PULSE DUTY CYCLE, D = t 1 /t 2 0.02 0.05 0.2 0.5 2.0 5.0 20 50 0 200 500 k t, TIME (ms) Figure 1. Thermal Response IC, COLLECTOR CURRENT (AMPS) 0 250 ms 50 ms ms 0 s 0 00 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. MJE1502 & MJE150 Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 2 and 4 is based on T J(pk) = 150 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) < 150 C. T J(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. T A T C PD, POWER DISSIPATION (WATTS).0 2.0 60 40 20 T A T C 0 0 0 20 40 60 80 0 120 140 160 T, TEMPERATURE ( C) Figure. Power Derating
NPN MJE1502 PNP MJE150 00 00 h FE, DC CURRENT GAIN 0 h FE, DC CURRENT GAIN 0 Figure 4. NPN MJE1502 V CE = 5 V DC Current Gain Figure 5. PNP MJE150 V CE = 5 V DC Current Gain Figure 6. NPN MJE1502 V CE = 5 V V BE(on) Curve Figure 7. PNP MJE150 V CE = 5 V V BE(on) Curve 0 Figure 8. NPN MJE1502 V CE(sat) I C /I B = Figure 9. PNP MJE150 V CE(sat) I C /I B = 4
NPN MJE1502 PNP MJE150 0 0 Figure. NPN MJE1502 V CE(sat) I C /I B = 20 Figure 11. PNP MJE150 V CE(sat) I C /I B = 20, BASE EMITTER VOLTAGE (VOLTS), BASE EMITTER VOLTAGE (VOLTS) V BE Figure 12. NPN MJE1502 V BE(sat) I C /I B = V BE Figure 1. PNP MJE150 V BE(sat) I C /I B = 5
PACKAGE DIMENSIONS TO220 CASE 221A09 ISSUE AH H Q Z L V G B 4 1 2 N D A K F T U S R J C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.570 0.620 14.48 15.75 B 0.80 0.415 9.66.5 C 60 90 4.07 4.8 D 0.025 0.08 0.64 0.96 F 42 61.61 4.09 G 0.095 0.5 2.42 2.66 H 61 2.80 4. J 4 0.024 0.6 0.61 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 90 0.2 4.8 5. Q 0.0 20 2.54.04 R 0.080 2.04 2.79 S 0.045 0.055 1.15 1.9 T 0.25 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 STYLE 1: PIN 1. BASE 2. COLLECTOR. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 516, Denver, Colorado 80217 USA Phone: 06752175 or 80044860 Toll Free USA/Canada Fax: 06752176 or 80044867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 790 29 Japan Customer Focus Center Phone: 81581750 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE1502/D