dvanced Power MOSFET SFF9250L FETURES Logic-Level Gate Drive valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitances Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : 0u (Max.) @ =-200 Lower R DS(ON) : 0.75 Ω (Typ.) bsolute Maximum Ratings BS = -200 R DS(on) = 0.23 Ω I D = -2.6 TO-3PF 2 3.Gate 2. Drain 3. Source S I D I DM E S I R E R dv/dt P D T J, T STG T L Characteristic alue Units Drain-to-Source oltage -200 Continuous Drain Current (T C =25 C) -2.6 Continuous Drain Current (T C =00 C) -7.9 Drain Current-Pulsed Gate-to-Source oltage Single Pulsed valanche Energy valanche Current Repetitive valanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T C =25 C) Linear Derating Factor 2 3-50. ±20 990-2.6 20. -5.0 90 0.72 mj mj /ns W W/ C Operating Junction and Storage Temperature Range - 55 to +50 Maximum Lead Temp. for Soldering Purposes, /8 from case for 5-seconds 300 C Thermal Resistance R θjc R θj Characteristic Typ. Max. Units Junction-to-Case 0.6 Junction-to-mbient 0 C/W Rev.
SFF9250L P-CHNNEL Electrical Characteristics (T C =25 C unless otherwise specified) Characteristic Min. Typ. Max. Units Test Condition BS Drain-Source Breakdown oltage -200 =0,I D =-250μ ΔB/ΔT J Breakdown oltage Temp. Coeff. -0.7 / C I D =-250μ See Fig 7 (th) Gate Threshold oltage -.0-2.0 =-5,I D =-250μ I GSS Gate-Source Leakage, Forward Gate-Source Leakage, Reverse 00-00 n =-20 =20 I DSS Drain-to-Source Leakage Current 0 00 μ =-200 =-60,T C =25 C R DS(on) Static Drain-Source On-State Resistance.75 0.23 Ω =-5,I D =-6.3 g fs Forward Transconductance 3 S =-0,I D =-6.3 C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance 2500 00 20 3250 520 270 pf =0, =-25,f =MHz See Fig 5 t d(on) t r t d(off) t f Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 20 50 00 65 50 30 20 0 ns DD =-00,I D =-2.6, R G =6.2Ω See Fig 3 5 Q g Total Gate Charge 90 20 =-60, =-5, Q gs Gate-Source Charge 2 nc I D =-2.6 Q gd Gate-Drain(Miller) Charge 5 See Fig 6 & Fig 2 5 Source-Drain Diode Ratings and Characteristics Characteristic Min. Typ. Max. Units Test Condition I S I SM Continuous Source Current Pulsed-Source Current -2.6-50. Integral reverse pn-diode in the MOSFET SD Diode Forward oltage -.5 T J =25 C,I S =-2.6, =0 t rr Reverse Recovery Time 260 ns T J =25 C,I F =-9.5, DD =-60 Q rr Reverse Recovery Charge 2.8 μc di F /dt=00/μs Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=3.9mH, I S =-9.5, DD =-50, R G =27Ω, Starting T J =25 3 I SD -9.5, di/dt 500/μs, DD BS, Starting T J =25 Pulse Test : Pulse Width 300μs, Duty Cycle 2% 5 Essentially Independent of Operating Temperature
P-CHNNEL SFF9250L Fig. Output Characteristics Fig 2. Transfer Characteristics -I D, Drain Current [] 0 0 0 Top : -0.0-8.0-6.0-5.0 -.5 -.0-3.5 Bottom : -3.0. 250μ s Pulse Test 2. T C = 25 -I D, Drain Current [] 0 0 0 25 50-55 Note. = -0 2. 250μ s Pulse Test 0-0 0 0 -, Drain-Source oltage [] 0-2 6 8 0 -, Gate-Source oltage [] 0.8 Fig 3. On-Resistance vs. Drain Current Fig. Source-Drain Diode Forward oltage R DS(on), [ Ω] Drain-Source On-Resistance 0.6 0. 0.2 = - 0 = - 5 T J = 25 -I DR, Reverse Drain Current [] 0 0 0 50 25. = 0 2. 250μ s Pulse Test 0.0 0 20 0 60 80 00 -I D, Drain Current [] 0-0.6.2.8 2. 3.0 3.6 - SD, Source-Drain oltage [] Capacitances [pf] 2000 0500 9000 7500 6000 500 3000 500 Fig 5. Capacitance vs. Drain-Source oltage C iss C oss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Note ;. = 0 2. f = MHz -, Gate-Source oltage [] 6 2 Fig 6. Gate Charge vs. Gate-Source oltage = -0 = -00 = -60 I D = -9.5 0 0-0 0 0 -, Drain-Source oltage [] 0 0 20 0 60 80 00 Q G, Total Gate Charge [nc]
SFF9250L P-CHNNEL.2 Fig 7. Breakdown oltage vs. Temperature 2.5 Fig 8. On-Resistance vs. Temperature -BS, (Normalized) Drain-Source Breakdown oltage..0 0.9. = 0 2. I D = -250 μ R DS(ON), (Normalized) Drain-Source On-Resistance 2.0.5.0 0.5. = -5 2. I D = -9.8 0.8-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] 0.0-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] -I D, Drain Current [] 0 2 0 Fig 9. Max. Safe Operating rea Operation in This rea is Limited by R DS(on) 00 µs ms 0 ms DC 0 0 Notes :. T C = 25 o C 2. T J = 50 o C 3. Single Pulse 0-0 0 0 0 2 -, Drain-Source oltage [] -I D, Drain Current [] Fig 0. Max. Drain Current vs. Case Temperature 20 5 0 5 0 25 50 75 00 25 50 T C, Case Temperature [ ] 0 0 Fig. Thermal Response Z θ JC (t), Thermal Response 0-0 -2 D=0.5 0.2 0. 0.05 0.02 0.0 single pulse N o te s :. Z θ JC (t) = 0.6 /W M ax. 2. D uty F actor, D =t /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t t 2 0-5 0-0 -3 0-2 0-0 0 0 t, Square W ave Pulse D uration [sec]
P-CHNNEL SFF9250L Fig 2. Gate Charge Test Circuit & Waveform 2 200nF 50KΩ 300nF Same Type as DUT -5 Q g Q gs Q gd -3m DUT Charge Fig 3. Resistive Switching Test Circuit & Waveforms R L t on t off R G DD ( 0.5 rated ) in 0% t d(on) t r t d(off) t f -5 DUT 90% Fig. Unclamped Inductive Switching Test Circuit & Waveforms L E S = 2 L L I 2 S BS BS DD I D DD t p Time R G DD (t) -5 DUT I S BS I D (t)
SFF9250L P-CHNNEL Fig 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + _ I S L Driver R G Compliment of DUT (N-Channel) DD dv/dt controlled by RG I S controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 5 I S ( DUT ) I FM, Body Diode Forward Current di/dt I RM ( DUT ) Body Diode Reverse Current Body Diode Recovery dv/dt f DD Body Diode Forward oltage Drop
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