28LV11 1 Megabit (128K x 8-Bit) EEPROM V CC V SS High Voltage Generator I/O I/O7 RDY/Busy RES OE I/O Buffer and Input Latch CE WE RES Control Logic Timing 28LV11A A A6 Y Decoder Y Gating A7 Address Buffer and Latch X Decoder Memory Array A16 Data Latch FEATURES: DESCRIPTION: Logic Diagram Memory 3.3V Low Voltage Operation, 128k x 8-bit EEPROM RAD-PAK radiation-hardened agait natural space radiation Total dose hardness: - > 1 krad (Si), depending upon space mission Excellent Single event effects @ 25 C - SEL > 12 MeV cm 2 /mg (Device) - SEU > 85 MeV cm 2 /mg(memory Cells) - SEU > 18 MeV cm 2 /mg (Write Mode) - SET > 4 MeV cm 2 /mg (Read Mode) Package: - 32-pin RAD-PAK flat package - JEDEC-approved byte-wide pinout High speed: - 2 and 25 maximum access times available High endurance: - 1, erase/write (in Page Mode), - 1 year data retention Page write mode: - 1 to 128 bytes Low power dissipation - 2 mw/mhz active (typical) - 11 µw standby (maximum) Maxwell Technologies 28LV11 high-deity 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 1 krad (Si) total dose tolerance, depending upon space mission. The 28LV11 is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operatio faster. It also features data polling and a Ready/Busy signal to indicate the completion of erase and programming operatio. In the 28LV11, hardware data protection is provided with the RES, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 1 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies self-defined Class S. 3.24.15 Rev 4 1 (858) 53-33- Fax: (858) 53-331 - www.maxwell.com 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 TABLE 1. 28LV11 PINOUT DESCRIPTION PIN SYMBOL DESCRIPTION 12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 A-A16 Address 24 OE Output Enable 22 CE Chip Enable 29 WE Write Enable 32 V CC Power Supply 16 V SS Ground 1 RDY/BUSY Ready/Busy 3 RES Reset TABLE 2. 28LV11 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN MAX UNITS Supply Voltage (Relative to V SS ) V CC -.6 +7. V Input Voltage (Relative to V SS ) V IN -.5 1 +7. V Operating Temperature Range T OPR -55 +125 C Storage Temperature Range T STG -65 +15 C Memory 1. V IN min = -3.V for pulse width < 5. TABLE 3. DELTA LIMITS PARAMETER VARIATION I CC 1 ±1% I CC 2 ±1% I CC 3A ±1% I CC 3B ±1% TABLE 4. 28LV11 RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN MAX UNITS Supply Voltage V CC 3. 3.6 V Input Voltage V IL -.3 1.8 V V IH 2.2 V CC +.3 RES_PIN V H V CC -.5 V CC +1 Operating Temperature Range T OPR -55 +125 C 1. V IL min = -1.V for pulse width < 5 3.24.15 Rev 4 2 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 TABLE 5. 28LV11 CAPACITANCE (T A = 25 C, f = 1 MHZ) PARAMETER SYMBOL MIN MAX UNITS Input Capacitance: V IN = V 1 C IN 6 pf Output Capacitance: V OUT = V 1 C OUT 12 pf 1. Guaranteed by design. TABLE 6. 28LV11 DC ELECTRICAL CHARACTERISTICS (V CC =3.35V ± 1%, T A = -55 TO +125 C, UNLESS OTHERWISE SPECIFIED) PARAMETER TEST CONDITION SUBGROUPS SYMBOL MIN MAX UNITS Input Leakage Current V CC = 3.6V, V IN = 3.6V 1, 2, 3 I IL 2 1 µa Output Leakage Current V CC = 3.6V, V OUT = 3.6V/.4V 1, 2, 3 I LO 2 µa Standby V CC Current CE = V CC 1, 2, 3 I CC1 2 µa CE = V IH I CC2 1 ma Operating V CC Current I OUT = ma, Duty = 1%, Cycle = 1, 2, 3 I CC3 6 ma 1µs at V CC = 3.3V I OUT = ma, Duty = 1%, Cycle = 1, 2, 3 15 15 at V CC = 3.3V Input Voltage 1, 2, 3 V IL.8 V V IH 2. RES_PIN V H V CC -.5 Output Voltage I OL = 2.1 ma 1, 2, 3 V OL.4 V I OH = -.4 ma V OH 2.4 I OH = -.1mA V OH V CC -.3V Memory 1. I LI on RES = 1 ua max. TABLE 7. 28LV11 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 (V CC = 3.3V + 1%, T A = -55 TO +125 C) PARAMETER SYMBOL SUBGROUPS MIN MAX UNITS Address Access Time CE = OE = V IL, WE = V IH -25 t ACC 2 25 Chip Enable Access Time OE = V IL, WE = V IH -25 t CE 2 25 3.24.15 Rev 4 3 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 TABLE 7. 28LV11 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 (V CC = 3.3V + 1%, T A = -55 TO +125 C) PARAMETER SYMBOL SUBGROUPS MIN MAX UNITS Output Enable Access Time CE = V IL, WE = V IH -25 t OE 11 12 Output Hold to Address Change CE = OE = V IL, WE = V IH -25 t OH Output Disable to High-Z 2 CE = V IL, WE = V IH -15 CE = OE = V IL, WE = V IH -25 t DF t DFR 5 5 3 35 RES to Output Delay 3 CE = OE = V IL, WE = V IH -25 t RR 525 55 Memory 1. Test conditio: Input pulse levels -.4V to 2.4V; input rise and fall times < 2; output load - 1 TTL gate + 1pF (including scope and jig); reference levels for measuring timing -.8V/1.8V. 2. t DF and t DFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design. TABLE 8. 28LV11 AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE OPERATIONS (V CC = 3.3V + 1%, T A = -55 TO +125 C) PARAMETER SYMBOL SUBGROUPS MIN 1 MAX UNITS Address Setup Time -25 t AS Chip Enable to Write Setup Time (WE controlled) -25 t CS 3.24.15 Rev 4 4 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 TABLE 8. 28LV11 AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE OPERATIONS (V CC = 3.3V + 1%, T A = -55 TO +125 C) PARAMETER SYMBOL SUBGROUPS MIN 1 MAX UNITS Write Pulse Width CE controlled -15 WE controlled -15 t CW t WP 2 25 2 25 Address Hold Time -25 t AH 125 15 Data Setup Time -25 t DS 1 1 Data Hold Time -15 Chip Enable Hold Time (WE controlled) -25 t DH t CH 1 1 Memory Write Enable to Write Setup Time (CE controlled) -25 t WS Write Enable Hold Time (CE controlled) -15 t WH Output Enable to Write Setup Time -25 t OES Output Enable Hold Time -25 t OEH Write Cycle Time 2-15 t WC 15 15 ms Data Latch Time -25 t DL 7 75 Byte Load Window -25 t BL 1 1 µs 3.24.15 Rev 4 5 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 TABLE 8. 28LV11 AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE OPERATIONS (V CC = 3.3V + 1%, T A = -55 TO +125 C) PARAMETER SYMBOL SUBGROUPS MIN 1 MAX UNITS Byte Load Cycle -25 Time to Device Busy -25 Write Start Time 3-15 RES to Write Setup Time -15 V CC to RES Setup Time 4-25 t BLC t DB t DW t RP t RES 1. Use this device in a longer cycle than this value. 2. t WC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after t DW if polling techniques or RDY/BUSY are used. 4. Gauranteed by design. 1 1 1 12 25 25 1 1 1 1 3 3 µs µs µs Memory 1. X = Don t care. TABLE 9. 28LV11 MODE SELECTION 1 PARAMETER CE OE WE I/O RES RDY/BUSY Read V IL V IL V IH D OUT V H High-Z Standby V IH X X High-Z X High-Z Write V IL V IH V IL D IN V H High-Z > V OL Deselect V IL V IH V IH High-Z V H High-Z Write Inhibit X X V IH X X V IL X X Data Polling V IL V IL V IH Data Out (I/O7) V H V OL Program X X X High-Z V IL High-Z 3.24.15 Rev 4 6 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 FIGURE 1. READ TIMING WAVEFORM 3.24.15 Rev 4 7 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) 3.24.15 Rev 4 8 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) 3.24.15 Rev 4 9 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) 3.24.15 Rev 4 1 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) FIGURE 6. DATA POLLING TIMING WAVEFORM 3.24.15 Rev 4 11 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE) FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE) EEPROM APPLICATION NOTES This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data protection. Automatic Page Write Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A to A6). Loading the first byte of data, the data load window ope 3µs for the second byte. In the same manner each additional byte of data can be loaded within 3µs. In case CE and WE are kept high for 1 µs after data input, EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM. 3.24.15 Rev 4 12 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Data Polling Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to V OL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance. RES Signal When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when V CC is switched. RES should be high during read and programming because it doesn t provide a latch function. Memory Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functio described below. 1. Data Protection agait Noise of Control Pi (CE, OE, WE) during Operation. 3.24.15 Rev 4 13 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 During readout or standby, noise on the control pi may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 2 or less in programming mode. Be careful not to allow noise of a width of more than 2 on the control pi. 2. Data Protection at V CC on/off When V CC is turned on or off, noise on the control pi generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during V CC on/off by using a CPU reset signal to RES pin. Memory RES should be kept at V SS level when V CC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn t finish correctly in case that RES falls low during programming operation. RES should be kept high for 1 ms after the last data input. 3. Software Data Protection 3.24.15 Rev 4 14 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode. Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM tur to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written. 3.24.15 Rev 4 15 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 32-PIN RAD-PAK FLAT PACKAGE DIMENSION SYMBOL MIN NOM MAX A.117.13.143 b.15.17.22 c.4.5.9 D.82.83 E.44.41.416 E1.426 e.5bsc L.35.37.39 Q.21.33.36 S1.5.27 N 32 Note: All dimeio in inches Top and Bottom of the package are connected internally to ground. 3.24.15 Rev 4 16 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 28LV11 32-Pin Rad-Tolerant Flat Package DIMENSION SYMBOL MIN NOM MAX A.78.87.96 b.15.17.22 c.4.5.9 D.82.83 E.44.41.416 E1.426 e.5bsc L.39.4.41 Q.2.35.45 S1.5.27 N 32 Note: All dimeio in inches Top and Bottom of the package are connected internally to ground. 3.24.15 Rev 4 17 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 Important Notice: These data sheets are created using the chip manufacturers published specificatio. Maxwell Technologies verifies functionality by testing key parameters either by 1% testing, sample testing or characterization. The specificatio presented within these data sheets represent the latest and most accurate information available to date. However, these specificatio are subject to change without notice and Maxwell Technologies assumes no respoibility for the use of this information. Maxwell Technologies products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim agait Maxwell Technologies must be made within 9 days from the date of shipment from Maxwell Technologies. Maxwell Technologies liability shall be limited to replacement of defective parts. 3.24.15 Rev 4 18 215 Maxwell Technologies
1 Megabit (128K x 8-Bit) EEPROM 28LV11 Product Ordering Optio 1 Model Number Feature Option Details 28LV11 XX F X -XX Access Time 2 = 2 25 = 25 Screening Flow Monolithic 1 S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -55 C, +25 C, +125 C) E = Engineering (testing @ +25 C) Package F = Flat Pack Memory Radiation Feature 2 RP = RAD-PAK package RT = No Radiation Guarantee, Class E and I RT1 = 1 Krad (Read and Write) RT2R = 25 Krad (Read); 15 Krad (Write) RT4R = 4 Krad (Read); 15 Krad (Write) RT6R = 6 Krad (Read); 15 Krad (Write) Base Product Nomenclature 1 Megabit (128k x 8-bit) EEPROM 1) Products are manufactured and screened to Maxwell Technologies self-defined Class B and Class S. 2) The device will meet the specified read mode TID level, at the die level, if it is not written to during irradiation. Writing to the device during irradiation will reduce the device s TID tolerance - the specified write mode TID level. Writing to the device before irradiation does not alter the device s read mode TID level. 3.24.15 Rev 4 19 215 Maxwell Technologies