HiPerED² M I 2x 3 t 55ns rr High Performance ast ecovery Diode Low Loss and Soft ecovery ommon athode Part number DPHB Backside: cathode eatures / dvantages: pplications: Package: TO-247 Planar passivated chips ery low leakage current ery short recovery time Improved thermal behaviour ery low Irm-values ery soft recovery behaviour valanche voltage rated for reliable operation Soft reverse recovery for low EMI/I Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ntiparallel diode for high frequency switching devices ntisaturation diode Snubber diode ree wheeling diode ectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline ohs compliant Epoxy meets UL 94-
ast Diode Symbol SM M I I I M Definition max. reverse recovery current I ; 2 reverse recovery time 2 /µs T 25 T 15 T 25 T 125 T 25 T 125 atings min. typ. max. forward voltage drop I T 25 1.1 T 145 thermal resistance junction to case.95 K/W max. non-repetitive reverse blocking voltage reverse current, drain current onditions T 25 threshold voltage T 175.72 for power loss calculation only r slope resistance.7 mω thj thh max. repetitive reverse blocking voltage T 25 average forward current thermal resistance case to heatsink I I I rectangular d.5 P tot total power dissipation T 25 1 W T 15 I SM max. forward surge current t 1 ms; (5 Hz), sine; T 45 J junction capacitance 15 f 1 MHz T 25 42 T 175.25 1 55 85 5.25 1.34.97 1.18 3 Unit µ m K/W 4 p ns ns
Package TO-247 atings Symbol Definition onditions min. typ. max. Unit I MS MS current 1) per terminal 5 T virtual junction temperature -55 175 T op operation temperature -55 15 T stg storage temperature -55 15 Weight M D mounting torque.8 mounting force with clip 2 12 g Nm N Product Marking Part number Logo Part No. ssembly Line ssembly ode Date ode IXYS XXXXXXXXX Zyyww abcd D P HB Diode HiPerED ultra fast urrent ating [] ommon athode everse oltage [] TO-247D (3) Ordering Standard Part Number Marking on Product Delivery Mode Quantity ode No. DPHB DPHB Tube 3 5882 Similar Part Package oltage class DPGHB TO-247D (3) DPGQB TO-3P (3) DPGP DPGHJ TO-23B (D2Pak) (2) ISOPLUS247 (3) DPG8HB TO-247D (3) Equivalent ircuits for Simulation * on die level T 175 I ast Diode max threshold voltage.72 max slope resistance * 4.1 mω
Outlines TO-247 E 2 Ø P Ø P1 D2 Q 2x E2 L1 2x b2 b4 2x e D L 3x b 1 S E1 4 D1 Sym. Inches Millimeter min. max. min. max..185.29 4.7 5.3 1.87.12 2.21 2.59 2.59.98 1.5 2.49 D.819.845 2.79 21.45 E.1.4 15.48 1.24 E2.17.21 4.31 5.48 e.215 BS 5.4 BS L.78.8 19.8 2.3 L1 -.177-4.49 Ø P.14.144 3.55 3.5 Q.212.244 5.38.19 S.242 BS.14 BS b.39.55.99 1.4 b2.5.94 1.5 2.39 b4.12.135 2.59 3.43 c.15.35.38.89 D1.515-13.7 - D2.2.53.51 1.35 E1.53-13.45 - Ø P1 -.29-7.39
ast Diode I [] 8 4 2 T 15 25..4.8 1. [] 1..8 [μ]..4 T 125 2.2 [/μs] ig. 1 orward current ig. 2 Typ. reverse recov. charge I versus 24 22 2 18 I M 1 14 [] 12 1 8 T 125 2 [/μs] ig. 3 Typ. reverse recov. current I M 1.4 1..8 K f..4.2 I M. 4 8 12 1 11 1 9 8 [ns] 7 5 T [ ] [/μs] T 125 2 ig. 4 Typ. dynamic parameters ig. 5 Typ. reverse recov.time,i M versus T t fr 1 8 [ns] 4 2 t fr T 125 2 I [/μs] 1 8 ig. Typ. forward recovery voltage &timet fr versus di 4 2 [] 4 3 T 125 2 1..8 E rec 2 [μj] Z thj. [K/W].4 1.2 [/μs] ig. 7 Typ. recovery energy E rec. 1 1 1 2 1 3 1 4 t [s] ig. 8 Transient thermal impedance junction to case