ST Offer for Power Modules

Similar documents
SLLIMM - nano Series

IGBT and SLLIMM. Technology evolution, Roadmaps and short term new products overview

Pitch Pack Microsemi full SiC Power Modules

Power Matters Microsemi SiC Products

Power 'n Motors. Critical aspects in power applications design, proper component selection & experimental results

ACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC

Power Semiconductors technologies trends for E-Mobility

Fast switching and its challenges on Power Module Packaging and System Design

A SiC MOSFET for mainstream adoption

IGBT STARPOWER GD400SGK120C2S. Absolute Maximum Ratings T C =25 unless otherwise noted SEMICONDUCTOR TM. Molding Type Module

TRENCHSTOP 5 boosts efficiency in Home Appliance, Solar and Welding Applications

D AB Z DETAIL "B" DETAIL "A"

Silicon Carbide Technology Overview

ARCAL Dual IGBTs and MOSFETs Driver "SCALE-2 TECHNOLOGY"

How to Design an R g Resistor for a Vishay Trench PT IGBT

IRPT3054A IRPT3054A. Power Module for 5 hp Motor Drives. 5 hp (3.7 kw) power output

IGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/10A PIM in one-package. General Description. Features. Typical Applications

Power MOSFET Stage for Boost Converters

IGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07

Driving IGBTs with unipolar gate voltage

Silicon Carbide Semiconductor Products

UF3C120080K4S. 1200V-80mW SiC Cascode DATASHEET. Description. Features. Typical applications CASE D (1) CASE G (4) KS (3) S (2) Rev.

PULSE CONTROLLED INVERTER

Raffael Schnell, Product Manager, ABB Switzerland Ltd, Semiconductors LinPak a new low inductive phase-leg IGBT module ABB

Symbol Description GD200CLT120C2S Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20V V

Using the Latest Wolfspeed C3M TM SiC MOSFETs to Simplify Design for Level 3 DC Fast Chargers

IGBT Module Sixpack MWI 25-12A7(T) I C25 = 50 A V CES = 1200 V V CE(sat) typ. = 2.2 V. Short Circuit SOA Capability Square RBSOA

GS66516T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet

EMP30P06D PIM+ Power module frame pins mapping. EMP Features:

CREE POWER PRODUCTS Cree SiC HIGH FREQUENCY FOR HIGH POWER. SMALLER. COOLER. BETTER.

IRPT2062A IRPT2062A. Power Module for 3 hp Motor Drives. 3 hp (2.2 kw) power output

IGBT Technologies and Applications Overview: How and When to Use an IGBT Vittorio Crisafulli, Apps Eng Manager. Public Information

1200V 50A IGBT Module

Chapter 1. Product Outline

Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg

IGBT Module Sixpack MWI 15-12A7. I C25 = 30 A V CES = 1200 V V CE(sat) typ. = 2.0 V. Short Circuit SOA Capability Square RBSOA

Cree PV Inverter Tops 1kW/kg with All-SiC Design

A new compact power modules range for efficient solar inverters

AN2239 APPLICATION NOTE

High Voltage Power MOSFET & IGBTs. Ester Spitale

Efficiency improvement with silicon carbide based power modules

27mW - 650V SiC Cascode UJ3C065030K3S Datasheet. Description. Typical Applications. Maximum Ratings

80mW - 650V SiC Cascode UJ3C065080K3S Datasheet. Description. Typical Applications. Maximum Ratings

IGBT XPT Module H Bridge

ThinPAK 8x8. New High Voltage SMD-Package. April 2010 Version 1.0

Switch mode power supplies Low gate charge. Power factor correction modules Low intrinsic capacitance

D AB Z DETAIL "B" DETAIL "A"

2.8 Gen4 Medium Voltage SST Development

Rectifier with Chopper

35mW V SiC Cascode UJ3C120040K3S Datasheet. Description. Typical Applications. Maximum Ratings

Integrated DC link capacitor/bus enables a 20% increase in inverter efficiency

Gate drive card converts logic level turn on/off commands. Gate Drive Card for High Power Three Phase PWM Converters. Engineer R&D

Switch mode power supplies Low gate charge. Power factor correction modules Low intrinsic capacitance

EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A

Application Note AN-1120

1200 V 600 A IGBT Module

SiC Transistor Basics: FAQs

DIM1000ACM33-TS001. IGBT Chopper Module DIM1000ACM33-TS001 FEATURES KEY PARAMETERS V CES

Power of GaN. Enabling designers to create smaller, more efficient and higher-performing AC/DC power supplies

IRPT1057A IRPT1057A. Power Module for 0.75 hp Motor Drives hp (0.56kW) power output

10-PZ126PA080ME-M909F18Y. Maximum Ratings

High-power IGBT Modules

A Highly Versatile Laboratory Setup for Teaching Basics of Power Electronics in Industry Related Form

Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A

EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 75 A

Effects of the Internal Layout on the Performance of IGBT Power Modules

Switch mode power supplies Excellent reverse recovery. Power factor correction modules Low gate charge Motor drives Low intrinsic capacitance

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G)

IGBT ECONO3 Module, 150 A

RC-D Fast : RC-Drives IGBT optimized for high switching frequency

A Soft And Efficient Switch For Industrial Applications

Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

Inverter Igbt Circuit

IGBT STARPOWER GD75HFU120C1S SEMICONDUCTOR TM. Molding Type Module. 1200V/75A 2 in one-package. General Description. Features. Typical Applications

Molding Type Module IGBT, 1-in-1 Package, 1200 V and 300 A

IGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/225A 6 in one-package. General Description. Features. Typical Applications

650V IGBT4. the optimized device for large current modules with 10µs short-circuit withstand time. PCIM 2010 Nürnberg,

Design and Applications of HCPL-3020 and HCPL-0302 Gate Drive Optocouplers

provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40

Full Bridge IGBT MTP (Warp Speed IGBT), 50 A

IAP200T120 SixPac 200A / 1200V 3-Phase Bridge IGBT Inverter

Gate-Driver with Full Protection for SiC-MOSFET Modules

Applications. Power [V] Q1 17 < Speed [khz] MP Developing Planning Review. Industrial (10kW~) UPS (~1kW) Hybrid Car Power train (~50KW)

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)

GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet

CP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts

Features: Phase A Phase B Phase C -DC_A -DC_B -DC_C

Features. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module

DIM600XSM45-F000. Single Switch IGBT Module FEATURES KEY PARAMETERS V CES. 4500V V CE(sat) * (typ) 2.9 V I C

GS61008T Top-side cooled 100 V E-mode GaN transistor Preliminary Datasheet

Electrical performance of a low inductive 3.3kV half bridge

600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G*

IRPT1053A. POWIRTRAIN Power Module for 1 hp Motor Drives

High Power Rugged Type IGBT Module

Evaluation Board for CoolSiC Easy1B half-bridge modules

HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE

Ordering Information Base Part Number Package Type Standard Pack Complete Part Number 500 I D = 100A T J = 125 C 200 I D,

StrongIRFET IRFB7546PbF

EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 150 A

Transcription:

ST Offer for Power Modules Brief Overview March 21, 2018

Power Transistor Division Power Product Portfolio 2 From Discrete to Power Modules, ST leads the innovation Discrete & Drivers & SIP SLLIMM IPM ACEPACK Power Modules Typical Power: 10 W 5 kw Typical Power: 20 W 3 kw Typical Power: 3 kw 30 kw Ideal solutions for Industrial & Robotic Drives, Home Appliances, Welding, Pumps, Fans & Blowers, Air Conditioning

Million $ Million $ Module Market Trends 2016-2021 3 1.000 Trend by Application 4.000 Trend by Typology 900 3.500 800 3.000 700 2.500 600 500 400 300 2.000 1.500 1.000 500 200 100 0 0 1.200 1.000 CIB Modules MOSFET Modules IGBT Modules Total Trend by Region 800 600 400 200 IHS Data @ Oct 2017 0 EMEA Americas China Rest of Asia Japan

ACEPACK Adaptable, Compact and Easier PACKage 4 The best Power Module offer for Industrial Motor Control and more Power Modules for various applications Technology & Flexibility to address market needs 100% controlled by ST for silicon (SiC, MOSFET, IGBT and Diodes) Current level from 15 A to 75 A for power scalability 650 V and 1200 V

ACEPACK 5 Features and Benefits Press FIT and solder pins options, configuration flexibility Up to 1200V breakdown voltage Integrated screw clamps All power switches in a module including NTC Adaptable Compact Easier Several configurations (CIB, 6pack,.. ) available and low stray inductance High reliability and robustness, miniaturized power side board occupation Simplified and stable screwing Compact design and cost effective system approach Several current ratings available Very high power density

ACEPACK Technology & Flexibility to Address Market Needs 6 Main Features Main Features Compact module concept Configuration flexibility Press FIT and solder pins options High power density Reliable and easy mounting system Integrated temperature sensor available Low stray inductance module design PCB layout design High reliability and quality RoHS-compliant modules ST ST Power Switch capability IGBTs HV MOSFETs Diodes Bridge Rectifier Diodes Silicon Carbide MOSFETs Silicon Carbide Diodes SCR.etc. Main Topologies can be addressed in ACEPACK PIM / CIB Triple Boost 4-PACK SIX-PACK Three Level ACEPACK 1 6-PACK 25-35A,1200V 6-pack 50A,650V CIB 15A,1200V Air Conditioning Motor drives Servo drives UPS (H)EV ACEPACK 2 6-PACK 75A,1200V CIB 25-35A,1200VV CIB 50A,650V Air Conditioning Motor drives Auxiliary Inverters Three Level Three Level

ACEPACK Nomenclature 7 A1 P 25 S 12 M Fx Module Type A1 = ACEPACK 1 A2 = ACEPACK 2 Additional Options F = Press Fit C = Capacitor inside Internal Main Configuration T = 12-Pack P = Sixpack (3 phase Full Bridge) C = Converter inverter Brake (CIB) H = Half Bridge U = Three Level TB = Triple Boost Current Indication (DC) for IGBT RDS(on)max for MOSFET RDS(on)typ for SiC Technology gen. Series H = High Speed IGBTs V = Very Fast IGBTs M = Low Loss IGBTs S = Low V CESAT IGBTs W = SiC MOSFET M5 = MDMESH V Diode Features S = Soft diode W = SiC Diode Breakdown Voltage 2 digits: value by 100 or by 10.

ACEPACK Module for Motor Control 8 Standard products in MP (solder and press fit pins) Part Number Topology BV CES I C rating Six-Pack + NTC ACEPACK 1 A1P25S12M3/-F 25A Six-Pack 1200V A1P35S12M3/-F 35A A1C15S12M3/-F Converter Inverter Brake 1200V 15A A1P50S65M2/-F Six-Pack 650V 50A CIB + NTC ACEPACK 2 Part Number Topology BV CES I C rating A2C25S12M3/-F 25A Converter Inverter Brake 1200V A2C35S12M3/-F 35A A2P75S12M3/-F Six-Pack 1200V 75A A2C50S65M2/-F Converter Inverter Brake 650V 50A

ACEPACK 1 Package 9 SIXPACK CIB

ACEPACK 2 Package 10 SIXPACK CIB

ACEPACK - Package Technology 11 Build from: DCB / high current pin / plastic housing ACEPACK assembly structure DBC inside view Assembled module Plastic frame Terminal pins Solder or PressFIT Copper traces PCB with components Lead wire Isolated DCB Pre-inserted clamps Mounting screw Thermal grease Assembled semiconductors ACEPACK module Heat sink Housing provides best-in-class technology standards

ACEPACK Test in ST Lab 12 AE Lab as a key enabler of performance benchmarks Main Applications: Robotic & Industrial Drives ACEPACK Module 650V / 1200V IGBT, 6-Pack or CIB Topology DC-load PMSM motor Laboratory of Traction, Czech University, Prague ACEPACK Module is performing in line with the best competition AC current and IGBT voltages

Application Benchmarks Motor Control 13 A1C15S12M3-F vs. 15A/1200V competition device, I peak =14A, V DC =500V, L S =30nH V GE ACEPACK Turn-on V GE Competitor Turn-on I C V CE I C V CE E E on =0,78mJ E E on =0,77mJ R Gon =22W V GE -5V/+15V Similar switching speed for datasheet resistors values @ application commutation inductance R Gon =39W V GE -5V/+15V

Application Benchmarks Motor Control 14 A1C15S12M3-F vs 15A/1200V competition device, I peak =14A, V DC =500V, L S =30nH V GE ACEPACK Turn-off V GE Competitor Turn-off I C V CE I C VCE E E off =1,55mJ E E off =1,7mJ R Goff =22W V GE -5V/+15V ST module shows higher switching speed with datasheet resistors values @ application commutation inductance R Goff =39W V GE -5V/+15V

P TOT [W] PTOT [W] Application Benchmarks Simulations 15 A2C35S12M3-F vs. 35A/1200V competition device, Pout=12.5kW Simulation Conditions V DC =700V I RMS =18A R Gon =R Goff =15W (different di/dt) CosPhi=0,93 m=1 Tj=135 C L S =100nH 70 60 50 40 30 20 10 Total power loss @ Ipeak=25.38A, Tj=135 C A2C35S12M3 FP35R12W2T4 Competition 0 4 8 12 16 20 24 fsw [khz] Simulation Outcome For same gate resistor Rg the ST module has ~ 7,5W less losses per switch. In total ST modules saves 45W of losses per module. Competition losses are 395W. ST saves ~ 11% of losses. More power or better efficiency or lower Tj (4,5 C) with ST module is possible Simulation Conditions 70 Total power loss @ Ipeak=25.38A, Tj=135 C Simulation Outcome V DC =700V I RMS =18A R Gon =R Goff =15W, ST=20W (same di/dt 1750A/µs@35A) CosPhi=0,93 m=1 Tj=135 C L S =100nH 60 50 40 30 20 10 A2C35S12M3 FP35R12W2T4 Competition 0 4 8 12 16 20f 24 sw [khz] For same di/dt = 1750A/µs (@35A, Tj=150 C) ST module have ~ 5,3W less losses per switch. In total ST modules saves 31W of losses per module. Competition losses are 395W. ST saves ~ 8% of losses. More power or better efficiency or lower Tj (3,2 C) with ST module is possible

Temperature ( C) Applications Benchmark Motor Control 16 A1C15S12M3-F vs. 15A/1200V competition device, I peak =14A, V DC =500V, L S =30nH 90 85 80 75 70 65 60 55 50 Case temperature measured under the IGBT die A1C15S12M3-F Competition Inverter conditions V DC =500V I RMS =10,6A R Gon =Rg Goff =22W (ST) R Gon =R Goff =39W (Competition) CosPhi=0,93 P out-mechanic =1170W 45 40 35 T A =24 C 30 0 200 400 600 800 1000 1200 1400 1600 1800 Time (s) In application conditions, the module case temperature remains similar for ST and the competitor product. Here relatively low mechanical power was measured

ACEPACK & Design-in Tools 17 STEVAL-CTM002V1 board enables quick ACEPACK evaluation Complete board ready to test with AC motor 3-phase input and output Overvoltage and Overload protection Full compatibility with MC STM32 ecosystem RS232 and CAN connection Board includes: A2C35S12M3-F, STGAP1S, STM32F303, DC/DC module

The dynamic electro-thermal simulation software dedicated to ST power devices ST PowerStudio 18 Developed for - SLLIMM, ACEPACK, Discrete* - Several Applications - Windows, MAC OS X*, Android* and ios* Powerful and flexible - Dynamic load sim. (up to 10 steps) - Long mission profile duration of hours - Several thermal setup Connectivity - Multilanguage (English, Chinese*, Japan*, ) - Quick link with st.com documents - PDF Output Report * Available in the next releases

Qualified accordingly to industrial standards ACEPACK Quality 19

ACEPACK Future Semiconductors and Topologies 20 Selected topologies and ST semiconductors Variety of possible topologies 3-phase bridges with rectifiers (CIB) 3-phase bridges (PACK) Half-Bridge 3-level T and I types booster multi-phase Variety of semiconductors IGBT, 650V, 1200V (variety of types) Si diodes, 650V, 1200V (variety of types) Silicon Carbide MOSFETs Silicon Carbide Diodes HV MOSFETS SCR and rectifier diodes 4-PACK Half-Bridge 3 - Level T-Type (1 & 3 legs) IGBT 3 - Level T-Type (1 & 3 legs) SiC-MOS Multi-Boost, MOS & SiC-MOS 3 - Level I-type IGBT Semiconductors and package ownership makes ST offer unique

Flyers and Technical Notes Support Material 21 Promotional plastic panel Reference Designs Evaluation Tool Software Presentations e-presentations STSW-POWERSTUDIO STEVAL-CTM002V1 STEVAL-CTM001V1

Grazie 감사합니다謝謝 Merci Danke Thanks For additional information,please visit: http://www.st.com/content/st_com/en/products/power-modules/acepack-power-modules.html