E Series Power MOSFET with Fast Body Diode ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 7 R DS(on) max. () at 25 C V GS = V.8 Q g max. (nc) 6 Q gs (nc) 4 Q gd (nc) 33 Configuration Single ORDERING INFORMATION Package Lead (Pb)free Lead (Pb)free and halogenfree G D S FEATURES Fast body diode MOSFET using E series technology Reduced t rr, Q rr, and I RRM Low figureofmerit (FOM) R on x Q g Low input capacitance (C iss ) Low switching losses due to reduced Q rr Available Ultra low gate charge (Q g ) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Telecommunications Server and telecom power supplies Lighting Highintensity discharge (HID) Fluorescent ballast lighting Consumer and computing ATX power supplies Industrial Welding Battery chargers Renewable energy Solar (PV inverters) Switch mode power supplies (SMPS) Applications using the following topologies LCC Phase shifted bridge (ZVS) 3level inverter AC/DC bridge ThinLead TO22 FULLPAK E3 GE3 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drainsource voltage 65 V Gatesource voltage V GS ± 3 Continuous drain current (T J = 5 C) e V GS at V T C = 25 C 2 I D T C = C 3 A Pulsed drain current a I DM 53 Linear derating factor.28 W/ C Single pulse avalanche energy b E AS 367 mj Maximum power dissipation P D 35 W Operating junction and storage temperature range T J, T stg 55 to 5 C Drainsource voltage slope T J = 25 C 37 dv/dt Reverse diode dv/dt d 3 V/ns Soldering recommendations (peak temperature) c for s 3 C Mounting torque M3 screw.6 Nm Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. = 5 V, starting T J = 25 C, L = 28.2 mh, R g = 25, I AS = 5. A c..6 mm from case d. I SD I D, di/dt = A/μs, starting T J = 25 C e. Limited by maximum junction temperature S738Rev. D, 2Aug7 Document Number: 9772 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum junctiontoambient R thja 65 C/W Maximum junctiontocase (drain) R thjc 3.6 SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drainsource breakdown voltage V GS = V, I D = 25 μa 65 V temperature coefficient /T J Reference to 25 C, I D = ma.67 V/ C Gatesource threshold voltage (N) V GS(th) = V GS, I D = 25 μa 2 4 V Gatesource leakage I GSS V GS = ± 2 V ± na V GS = ± 3 V ± μa = 52 V, V GS = V Zero gate voltage drain current I DSS = 52 V, V GS = V, T J = 25 C 5 μa Drainsource onstate resistance R DS(on) V GS = V I D = A.5.8 Forward transconductance g fs = 3 V, I D = A 7. S Dynamic Input capacitance C iss VGS = V, 2322 Output capacitance C oss = V, 5 Reverse transfer capacitance C rss f = MHz 4 Effective output capacitance, energy pf related a C o(er) 84 = V to 52 V, V GS = V Effective output capacitance, time related b C o(tr) 293 Total gate charge Q g 7 6 Gatesource charge Q gs V GS = V I D = A, = 52 V 4 nc Gatedrain charge Q gd 33 Turnon delay time t d(on) 22 44 Rise time t r = 52 V, I D = A, 34 68 Turnoff delay time t d(off) V GS = V, R g = 9. 68 2 ns Fall time t f 42 84 Gate input resistance R g f = MHz, open drain.78 DrainSource Body Diode Characteristics MOSFET symbol Continuous sourcedrain diode current I S D 2 showing the integral reverse G Pulsed diode forward current I SM S p n junction diode 53 Diode forward voltage V SD T J = 25 C, I S = A, V GS = V.9.2 V Reverse recovery time t rr 6 ns Reverse recovery charge Q rr T J = 25 C, I F = I S = A, di/dt = A/μs, V R = 25 V.2 μc Reverse recovery current I RRM 4 A Notes a. C oss(er) is a fixed capacitance that gives the same energy as C oss while is rising from % to 8 % S b. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while is rising from % to 8 % S A S738Rev. D, 2Aug7 2 Document Number: 9772 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) I D, DraintoSource Current (A) 6 5 4 3 2 TOP 5 V 4 V 3 V 2 V V V 9 V 8 V 7 V 6 V 5 V T J = 25 C R DS(on), DraintoSource On Resistance (Normalized) 3 2.5 2.5.5 I D = A V GS = V 5 5 2 25 3, DraintoSource Voltage (V) 6 4 2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig. Typical Output Characteristics Fig. 4 Normalized OnResistance vs. Temperature I D, DraintoSource Current (A) 4 3 2 TOP 5 V 4 V 3 V 2 V V V 9 V 8 V 7 V 6 V 5 V T J = 5 C Capacitance (pf) C oss C iss V GS = V, f = MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd C rss 5 5 2 25 3, DraintoSource Voltage (V) 2 3 4 5 6, DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics Fig. 5 Typical Capacitance vs. DraintoSource Voltage I D, DraintoSource Current (A) 6 5 4 3 T J = 5 C 2 T J = 25 C = 29.6 V 5 5 2 25 V GS, GatetoSource Voltage (V) C oss (pf) 4 5 2 5 C oss E oss 4 2 5 2 3 4 5 6 8 6 E oss (μj) Fig. 3 Typical Transfer Characteristics Fig. 6 C oss and E oss vs. S738Rev. D, 2Aug7 3 Document Number: 9772 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
V GS, GatetoSource Voltage (V) 24 2 6 2 8 4 = 52 V = 325 V = 3 V I D, Drain Current (A) 25 2 5 5 3 6 9 2 Q g, Total Gate Charge (nc) 5 25 5 75 25 5 T J, Case Temperature ( C) Fig. 7 Typical Gate Charge vs. GatetoSource Voltage Fig. Maximum Drain Current vs. Case Temperature I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V, DraintoSource Breakdown Voltage (V) 85 825 8 775 75 725 7 675 I D = ma..2.4.6.8.2.4.6 V SD, SourceDrain Voltage (V) 65 6 4 2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig. 8 Typical SourceDrain Diode Forward Voltage Fig. Temperature vs. DraintoSource Voltage Operation in this Area Limited by R DS(on) I DM Limited I D, Drain Current (A) Limited by R DS(on) *. T C = 25 C ms T J = 5 C Single Pulse BVDSS Limited., DraintoSource Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Fig. 9 Maximum Safe Operating Area μs ms S738Rev. D, 2Aug7 4 Document Number: 9772 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single Pulse..... Pulse Time (s) Fig. 2 Normalized Thermal Transient Impedance, JunctiontoCase R D t p V GS D.U.T. R G V Pulse width µs Duty factor. % I AS Fig. 3 Switching Time Test Circuit Fig. 6 Unclamped Inductive Waveforms 9 % V Q G Q GS Q GD % V GS t d(on) t r t d(off) t f V G Fig. 4 Switching Time Waveforms Charge Fig. 7 Basic Gate Charge Waveform Vary t p to obtain required I AS L Current regulator Same type as D.U.T. 5 kω R G I AS D.U.T 2 V.2 µf.3 µf D.U.T. V DS V t p. Ω V GS 3 ma Fig. 5 Unclamped Inductive Test Circuit Fig. 8 Gate Charge Test Circuit I G I D Current sampling resistors S738Rev. D, 2Aug7 5 Document Number: 9772 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test Driver gate drive P.W. Period D = P.W. Period V GS = V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. V GS = 5 V for logic level devices Fig. 9 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?9722. S738Rev. D, 2Aug7 6 Document Number: 9772 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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