Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter Sustaining Voltage V CEO(sus) = Vdc (Min) High DC Current Gain @ I C = madc h FE = 4 = 4 1 Low CollectorEmitter Saturation Voltage V CE(sat) =.3 Vdc (Max) @ I C = madc High Current Gain Bandwidth Product f T = 4 MHz (Min) @ I C = madc Annular Construction for Low Leakages I CBO = nadc (Max) @ Rated V CB PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO Vdc CollectorBase Voltage V CB Vdc EmitterBase Voltage V EB 7. Vdc Collector Current Continuous Peak I C 4. 8. Adc Base Current I B Adc Total Power Dissipation @ T C = 25 C Derate above 25 C Total Power Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 15 1 P D 1.5 12 W mw/ C W mw/ C T J, T stg 65 to + 1 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase JC 8.34 C/W Thermal Resistance, JunctiontoAmbient JA 83.4 C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 4. AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS, 15 WATTS ORDERING INFORMATION Device Package Shipping MJE243 TO225 Units/Box MJE243G 3 2 1 TO225 (PbFree) TO225 CASE 77 STYLE 1 MARKING DIAGRAM YWW JE2x3G Y = Year WW = Work Week JE2x3 = Device Code x = 4 or 5 G = PbFree Package Units/Box MJE253 TO225 Units/Box MJE253G TO225 (PbFree) Units/Box Preferred devices are recommended choices for future use and best overall value. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 8 February, 8 Rev. 12 1 Publication Order Number: MJE243/D
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I C = madc, I B = ) V CEO(sus) Vdc Collector Cutoff Current (V CB = Vdc, I E = ) (V CE = Vdc, I E =, T C = 125 C) I CBO.1.1 Adc Emitter Cutoff Current (V BE = 7. Vdc, I C = ) I EBO.1 Adc ON CHARACTERISTICS DC Current Gain (I C = madc, V CE = 1. Vdc) (I C = 1. Adc, V CE = 1. Vdc) h FE 4 15 18 CollectorEmitter Saturation Voltage (I C = madc, I B = madc) (I C = 1. Adc, I B = madc) V CE(sat).3.6 Vdc BaseEmitter Saturation Voltage (I C = 2. Adc, I B = madc) BaseEmitter On Voltage (I C = madc, V CE = 1. Vdc) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I C = madc, V CE = Vdc, f test = MHz) Output Capacitance (V CB = Vdc, I E =, f =.1 MHz) V BE(sat) 1.8 Vdc V BE(on) 1.5 Vdc f T 4 MHz C ob pf 2
16 1.6 TC PD, POWER DISSIPATION (WATTS) 12 8..8 4..4 1.2 TA P D, POWER DISSIPATION (WATTS) 4 6 8 1 14 16 T, TEMPERATURE ( C) Figure 1. Power Derating +11 V 9. V 25 s t r, t f ns DUTY CYCLE = 1.% 51 R B 4 V Figure 2. Switching Time Test Circuit D 1 V CC + 3 V R C SCOPE R B and R C VARIED TO OBTAIN DESIRED CURRENT LEVELS D 1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE I B ma MSD6 USED BELOW I B ma FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES t, TIME (ns) 1K 3 3 5 3 2 NPN MJE243 PNP MJE253 t r t d I C, COLLECTOR CURRENT (AMPS) V CC = 3 V I C /I B = 1.1.2.3.5.1.2.3.5 1 2 3 5 Figure 3. TurnOn Time r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1..7.5.3.2.1.7.5.3.2 D =.5.2.1.5.1 (SINGLE PULSE).2 JC (t) = r(t) JC JC = 8.34 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) JC (t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2.1.2.5.1.2.5 1. 2. 5. t, TIME (ms) Figure 4. Thermal Response 3
IC, COLLECTOR CURRENT (AMP) 5. 2. 1..5.2.1.5.2.1 1. 2. 1. ms dc T J = 1 C BONDING WIRE LIMITED THERMALLY LIMITED @ T C = 25 C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V CEO 3. 5. 7. V CE, COLLECTOREMITTER VOLTAGE (VOLTS) s 3 5. ms MJE243/MJE253 s 7 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 1 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) 1 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active Region Safe Operating Area t, TIME (ns) K 5K 3K 2K 1K 3 3 t f t s V CC = 3 V I C /I B = I B1 = I B2 NPN MJE243 PNP MJE253.1.2.3.5.1.2.3.5 1 2 3 5 I C, COLLECTOR CURRENT (AMPS) C, CAPACITANCE (pf) 7 3 1. 2. MJE243 (NPN) MJE253 (PNP) 3. 5. 7. C ib C ob V R, REVERSE VOLTAGE (VOLTS) 3 7 Figure 6. TurnOff Time Figure 7. Capacitance 4
NPN MJE243 PNP MJE253 hfe, DC CURRENT GAIN 3 7 3 7. 5..4 T J = 1 C 25 C 55 C.6.1.2.4.6 1. 2. 4. V CE = 1. V V CE = 2. V hfe, DC CURRENT GAIN 7 3 7. 5. Figure 8. DC Current Gain T J = 1 C 25 C 55 C 3. 2..4.6.1.2.4.6 1. 2. 4. V CE = 1. V V CE = 2. V 1.4 1.2 1.4 1.2 V, VOLTAGE (VOLTS) 1..8 V BE(sat) @ I C /I B =.6 V BE @ V CE = 1. V.4 I C /I B = 5..2 V CE(sat).4.6.1.2.4.6 1. 2. 4. V, VOLTAGE (VOLTS) 1. V BE(sat) @ I C /I B =.8.6 V BE @ V CE = 1. V.4 I C /I B = 5..2 V CE(sat).4.6.1.2.4.6 1. 2. 4. Figure 9. On Voltages V, TEMPERATURE COEFFICIENTS (mv/ C) θ + 2.5 + 2. + 1.5 + 1. +.5.5 1. 1.5 2. 2.5.4 *APPLIES FOR I C /I B h FE/3 * VC FOR V CE(sat) VB FOR V BE 25 C to 1 C 55 C to 25 C 25 C to 1 C 55 C to 25 C.6.1.2.4.6 1. 2. 4. V, TEMPERATURE COEFFICIENTS (mv/ C) θ + 2.5 + 2. + 1.5 + 1. +.5.5 1. 1.5 2. Figure. Temperature Coefficients *APPLIES FOR I C /I B h FE/3 * VC FOR V CE(sat) VB FOR V BE 25 C to 1 C 55 C to 25 C 25 C to 1 C 55 C to 25 C 2.5.4.6.1.2.4.6 1. 2. 4. 5
PACKAGE DIMENSIONS TO225 CASE 779 ISSUE Z H Q 1 2 3 F B U A K V G S D 2 PL M.25 (.) M A M B M C J R.25 (.) M A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 771 THRU 8 OBSOLETE, NEW STANDARD 779. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.425.435.8 11.4 B.295.35 7. 7.74 C.95.5 2.42 2.66 D..26.51.66 F.115.13 2.93 3.3 G.94 BSC 2.39 BSC H..95 1.27 2.41 J.15.25.39.63 K.575.655 14.61 16.63 M 5 TYP 5 TYP Q.148.158 3.76 4.1 R.45.65 1.15 1.65 S.25.35.64.88 U.145.155 3.69 3.93 V.4 1.2 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 336752175 or 8344386 Toll Free USA/Canada Fax: 336752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 29 Japan Customer Focus Center Phone: 813577338 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE243/D