EMD4 / UMD4N V CC I C(MAX.) R 1 R 2. 50V 100mA. 47kW. V CC -50V -100mA 10kW. Datasheet

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NPN + PNP Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht <For DTr1(NPN)> Outlin Paramtr Valu EMT6 UMT6 V CC I C(MAX.) R 1 R 2 50V 100mA 47kW 47kW (1) (2) (3) (6) (5) (4) EMD4 (SC-107C) (1) (2) (3) (6) (5) (4) UMD4N SOT-363 (SC-88) <For DTr2(PNP)> Paramtr Valu V CC -50V -100mA 10kW 47kW I C(MAX.) R 1 R 2 Faturs 1) Both th DTC144E chip and DTA114Y chip in on packag. 2) Built-in bias rsistors nabl th configuration of an invrtr circuit without conncting xtrnal input rsistors (s innr circuit). 3) Th bias rsistors consist of thin-film rsistors with complt isolation to allow ngativ biasing of th input. Thy also hav th advantag of compltly liminating parasitic ffcts. 4) Only th on/off conditions nd to b st for opration, making th circuit dsign asy. 5) Lad Fr/RoHS Compliant. Innr circuit OUT (6) DTr1 (1) GND R 2 R 1 IN (5) (2) IN R 1 R 2 GND (4) DTr2 (3) OUT Application Invrtr circuit, Intrfac circuit, Drivr circuit Packaging spcifications Part No. Packag Packag siz (mm) Taping cod Rl siz (mm) Tap width (mm) EMD4 EMT6 1616 T2R 180 8 UMD4N UMT6 2021 TR 180 8 Basic ordring unit (pcs) Marking 8,000 D4 3,000 D4 1/7 2013.07 - Rv.C

Data Sht Absolut maximum ratings (Ta = 25 C) Paramtr Symbol DTr1(NPN) DTr2(PNP) Unit Supply voltag V CC 50-50 V Input voltag V IN -10 to +40-40 to +6 V Output currnt I O 30-70 ma Collctor currnt I C(MAX.) *1 Powr dissipation P D *2 100-100 ma 150 (Total) *3 mw Junction tmpratur T j 150 C Rang of storag tmpratur T stg -55 to +150 C Elctrical charactristics(ta = 25 C) <For DTr1(NPN)> Paramtr Symbol Conditions Min. Typ. Max. Unit Input voltag V I(off) V I(on) V CC = 5V, I O = 100mA - - 0.5 V V O = 0.3V, I O = 2mA 3.0 - - Output voltag V O(on) I O / I I = 10mA / 0.5mA - 0.1 0.3 V Input currnt I I V I = 5V - - 0.18 ma Output currnt I O(off) V CC = 50V, V I = 0V - - 0.5 ma DC currnt gain G I V O = 5V, I O = 5mA 68 - - - Input rsistanc R 1-32.9 47 61.1 kw Rsistanc ratio R 2 /R 1-0.8 1 1.2 - Transition frquncy f T *1 V CE = 10V, I E = -5mA f = 100MHz - 250 - MHz Elctrical charactristics(ta = 25 C) <For DTr2(PNP)> Paramtr Symbol Conditions Min. Typ. Max. Unit Input voltag V I(off) V I(on) V CC = -5V, I O = -100mA - - -0.3 V V O = -0.3V, I O = -1mA -1.4 - - Output voltag V O(on) I O / I I = -5mA / -0.25mA - -0.1-0.3 V Input currnt I I V I = -5V - - -0.88 ma Output currnt I O(off) V CC = -50V, V I = 0V - - -0.5 ma DC currnt gain G I V O = -5V, I O = -5mA 68 - - - Input rsistanc R 1-7 10 13 kw Rsistanc ratio R 2 /R 1-3.7 4.7 5.7 - Transition frquncy f T *1 V CE = -10V, I E = 5mA f = 100MHz - 250 - MHz *1 Charactristics of built-in transistor *2 Each trminal mountd on a rfrnc footprint *3 120mW pr lmnt must not b xcdd. 2/7 2013.07 - Rv.C

Data Sht Elctrical charactristic curvs (Ta = 25 C) <For DTr1(NPN)> Fig.1 Input voltag vs. output currnt (ON charactristics) Fig.2 Output currnt vs. input voltag (OFF charactristics) INPUT VOLTAGE : V I(on) [V] INPUT VOLTAGE : V I(off) [V] Fig.3 Output currnt vs. output voltag Fig.4 DC currnt gain vs. output currnt 30 Ta=25ºC I I = 120mA OUTPUT CURRENT : I O [ma] 20 10 110mA 100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA DC CURRENT GAIN : G I 0 0 5 10 0A OUTPUT VOLTAGE : V O [V] 3/7 2013.07 - Rv.C

Data Sht Elctrical charactristic curvs (Ta = 25 C) <For DTr1(NPN)> Fig.5 Output voltag vs. output currnt OUTPUT VOLTAGE : V O(on) [V] Elctrical charactristic curvs (Ta = 25 C) <For DTr2(PNP)> Fig.6 Input voltag vs. output currnt (ON charactristics) Fig.7 Output currnt vs. input voltag (OFF charactristics) INPUT VOLTAGE : V I(on) [V] INPUT VOLTAGE : V I(off) [V] 4/7 2013.07 - Rv.C

Data Sht Elctrical charactristic curvs (Ta = 25 C) <For DTr2(PNP)> Fig.8 Output currnt vs. output voltag Fig.9 DC currnt gain vs. output currnt OUTPUT CURRENT : I O [ma] -70-60 -50-40 -30-20 -10 0 I I = -500mA -450mA -400mA -350mA -300mA -250mA -200mA -150mA -100mA Ta=25ºC -50mA 0A 0-5 -10 DC CURRENT GAIN : G I OUTPUT VOLTAGE : V O [V] Fig.10 Output voltag vs. output currnt OUTPUT VOLTAGE : V O(on) [V] 5/7 2013.07 - Rv.C

Data Sht Dimnsions (Unit : mm) EMT6 b D x S A A c L Lp E HE L Lp A 1 y S A1 l1 S b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] DIM MILIMETERS INCHES MIN MAX MIN MAX A 0.45 0.55 0.018 0.022 A1 0.00 0.10 0.000 0.004 b 0.17 0.27 0.007 0.011 c 0.08 0.18 0.003 0.007 D 1.50 1.70 0.059 0.067 E 1.10 1.30 0.043 0.051 0.50 0.020 HE 1.50 1.70 0.059 0.067 L 0.10 0.30 0.004 0.012 Lp - 0.35-0.014 x - 0.10-0.004 y - 0.10-0.004 MILIMETERS INCHES DIM MIN MAX MIN MAX b2-0.37-0.015 1 1.25 0.049 l1-0.45-0.018 Dimnsion in mm / inchs 6/7 2013.07 - Rv.C

Data Sht Dimnsions (Unit : mm) UMT6 D A Q c E H L1 Lp E b x S A A3 A 1 y S A1 S l1 b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] DIM MILIMETERS INCHES MIN MAX MIN MAX A 0.80 1.00 0.031 0.039 A1 0.00 0.10 0.000 0.004 A3 0.25 0.010 b 0.15 0.30 0.006 0.012 c 0.10 0.20 0.004 0.008 D 1.90 2.10 0.075 0.083 E 1.15 1.35 0.045 0.053 0.65 0.026 HE 2.00 2.20 0.079 0.087 L1 0.20 0.50 0.008 0.020 Lp 0.25 0.55 0.010 0.022 Q 0.10 0.30 0.004 0.012 x - 0.10-0.004 y - 0.10-0.004 MILIMETERS INCHES DIM MIN MAX MIN MAX b2-0.40-0.016 1 1.55 0.061 l1-0.65-0.026 Dimnsion in mm / inchs 7/7 2013.07 - Rv.C

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