SBB-5089Z GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier

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Transcription:

Product Description Sirenza Microdevices SBB-89Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a V supply, the SBB-89Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SBB-89Z product is designed for high linearity V gain block applications that require small size and minimal external components. It is internally matched to ohms. The matte tin finish on Sirenza s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 22/9. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. 2 1-1 -2 - Gain & Return Loss vs. Frequency (w/ BiasTees) S22 S11 S21 SBB-89Z.-6 GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier Product Features Wideband Flat Gain to 4GHz: +/-1.1 P1 = 2.4 m @ 19MHz Single Fixed V Supply Robust 1V ESD, Class 1C Patented Thermal Design & Bias Circuit Low Thermal Resistance MSL 1 moisture rating Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS Wideband Intrumentation Wireless Data, Satellite Terminals Pb RoHS Compliant & Green Package -4 1 2 4 6 Symbol Parameters Units Frequency Min. Typ. Max. 8 MHz 19 2. 22 S 21 Small Signal Gain 19 MHz 18. 2 21. 6 MHz 14. 16 17. P 1 IP Output Power at 1 Compression Third Order Intercept Point m m 8 MHz 8 MHz 2. 8. 19 MHz 19 MHz 19 2. Bandwidth S 11, S 22 : Minimum 1 Return Loss (typ.) MHz S 11 Input Return Loss 19 MHz 1 14 S 22 Output Return Loss 19 MHz 1 14 S 12 Reverse Isolation 19 MHz 2. NF Noise Figure 19 MHz 4.2 4.9 V D Device Operating Voltage V. I D Device Operating Current ma 6 7 92 R TH, j-l Thermal Resistance (junction - lead) C/W 69.9 Test Conditions: V D = V I D = 7 ma Typ. OIP Tone Spacing = 1MHz, Pout per tone = m T L = C Z S = Z L = Ohms Tested with Bias Tees The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright Sirenza Microdevices, Inc.. All worldwide rights reserved. S. Technology Ct. Phone: (8) SMI-MMIC http://www.sirenza.com Broomfield, CO 821 1 EDS-189 Rev F

SBB-89Z.-6 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (With.-. GHz Application Circuit) Frequency (MHz) Symbol Parameter Unit 8 19 4 S 21 Small Signal Gain 2.8 2.8 2.1 19.8 18.7 17.8 OIP Output Third Order Intercept Point m 8.6 9.2 4.9 2.8 29.4 26.8 P 1 Output Power at 1 Compression m 2. 2.4 2.4 19.4 16.9 14.7 S 11 Input Return Loss 27.2 22.7 14.6 12.9 1.6 11.6 S 22 Output Return Loss 1.8 21. 1. 12. 1. 27. S 12 Reverse Isolation 22.7 22.8 2.4 2.7 24.7.7 Test NF Conditions: Noise Figure.8.8 4.1 4.1 4. 4.6 Test Conditions: VCC = V I D = 7 ma Typ. OIP Tone Spacing = 1MHz, Pout per tone = m T L = C Z S = Z L = Ohms 8 Noise Figure @ 7 6 4 2 1 Avg. BiasTee Avg. AppCkt P1 vs. Frequency with App. Ckt.. 1 1. 2 2.. 4 2 m 4 4 OIP vs. Frequency with App. Ckt. 1 P1 P1 P1 m. 1 1. 2 2.. 4 2 IP IP IP. 1 1. 2 2.. 4 S. Technology Ct. Phone: (8) SMI-MMIC http://www.sirenza.com Broomfield, CO 821 2 EDS-189 Rev F

SBB-89Z.-6 GHz Cascadable MMIC Amplifier S-Parameters over Temperature (Bias Tee) S11 vs. Frequency S21 vs. Frequency -1 2-2 1 - -4 1 2 4 6 1 2 4 6-1 S12 vs. Frequency S22 vs. Frequency - -1-2 -2 - - - -4 1 2 4 6 - -4-1 2 4 6 Device Current over Temperature (Bias Tee) 84 Id vs. Temperature Current vs. Voltage Over Temp. (Bias Tees) 9 82 8 8 7 6 78 Temperature 4. 4.6 4.7 4.8 4.9.1.2..4. Voltage (V) S. Technology Ct. Phone: (8) SMI-MMIC http://www.sirenza.com Broomfield, CO 821 EDS-189 Rev F

SBB-89Z.-6 GHz Cascadable MMIC Amplifier. to.ghz Application Circuit S-Parameters over Temperature S11 vs. Frequency S21 vs. Frequency -1 2-2 - 1-4 1 2 4 1 2 4-1 S12 vs. Frequency S22 vs. Frequency - -1-2 -2 - - - - -4 1 2 4-4 - 1 2 4 Device Current over Temperature (w/app. Ckt.) 84 Id vs. Temperature Current vs. Voltage Over Temp. (App. Ckt.) 9 82 8 8 7 6 78 Temperature 4. 4.6 4.7 4.8 4.9.1.2..4. Voltage (V) S. Technology Ct. Phone: (8) SMI-MMIC http://www.sirenza.com Broomfield, CO 821 4 EDS-189 Rev F

SBB-89Z.-6 GHz Cascadable MMIC Amplifier Application Schematic V S 1 uf 12 pf Application Circuit Element Values Reference Designator L C Frequency (MHz) to 68pF 82nH 18CS L C RF in 1 4 SBB-89 2 RF out Evaluation Board Layout + Absolute Maximum Ratings Parameter Absolute Limit Max. Device Current (I D ) 1 ma Max. Device Voltage (V D ). V Max. RF Input Power +12 m Max. Operating Dissipated. W Power Max. Junction Temp. (T J ) + C Operating Temp. Range (T L ) -4 C to +8 C Max. Storage Temp. + C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I D V D < (T J - T L ) / R TH, j-l T L =T LEAD ESD Class 1C Appropriate precautions in handling, packaging and testing devices must be observed. Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown.. We recommend 1 or 2 ounce copper. Measurement for this datasheet were made on a 1 mil thick FR-4 board with 1 ounce copper on both sides. MSL (Moisture Sensitivity Level) Rating: Level 1 S. Technology Ct. Phone: (8) SMI-MMIC http://www.sirenza.com Broomfield, CO 821 EDS-189 Rev F

SBB-89Z.-6 GHz Cascadable MMIC Amplifier Suggested PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches (millimeters) Refer to package drawing posted at www.sirenza.com for tolerances Bottom View Side View Package Marking 4 BBZ 1 2 1 2 Lead Free Pin # Function Description Part Number Ordering Information Part Number Reel Size Devices / Reel SBB-89Z 7" 1 1 RF IN 2, 4 GND RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible RF OUT/ BIAS RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. S. Technology Ct. Phone: (8) SMI-MMIC http://www.sirenza.com Broomfield, CO 821 6 EDS-189 Rev F