Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1]

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features OBSOLETE. = +25 C, Vcc= 5V [1]

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v2.65 HMC455LP3 / 455LP3E Typical Applications Features This amplifi er is ideal for high linearity applications: Multi-Carrier Systems GSM, GPRS & EDGE CDMA & WCDMA PHS Functional Diagram Electrical Specifications, T A = +25 C, Vs= +5V Output IP3: +42 dbm Gain: 13 db 56% PAE @ +28 dbm Pout +19 dbm W-CDMA Channel Power @ -45 dbc ACP 3x3 mm QFN SMT Package General Description The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifi ers operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifi er provides 13 db of gain and +28 dbm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dbm coupled with the low VSWR of 1.4:1 make the HMC455LP3 & HMC455LP3E ideal driver amplifi ers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifi er. The LP3 provides an exposed base for excellent RF and thermal performance. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 1.7-1.9 1.9-2.2 2.2-2.5 GHz Gain.5 13.5 1.5 13 9.5 db Gain Variation Over Temperature.12.2.12.2.12.2 db / C Input Return Loss 13 15 1 db Output Return Loss 1 18 15 db Output Power for 1dB Compression (P1dB) 24 27 24.5 27.5 23 26 dbm Saturated Output Power (Psat) 28.5 28 27 dbm Output Third Order Intercept (IP3) 37 4 39 42 37 4 dbm Noise Figure 7 6 6 db Supply Current (Icq) 15 15 15 ma - 234 2 Alpha Road, Chelmsford, MA 1824 Phone: 978-25-3343 Fax: 978-25-3373

HMC455LP3 / 455LP3E v2.65 Broadband Gain & Return Loss 15 Gain vs. Temperature 2 1 RESPONSE (db) 5-5 -1-15 -2 S21 S S22 GAIN (db) 17 14 8-25 1 1.5 2 2.5 3 Input Return Loss vs. Temperature RETURN LOSS (db) -5-1 -15-2 -25 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 P1dB vs. Temperature 3 29 28 27 Output Return Loss vs. Temperature RETURN LOSS (db) 5 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5-5 -1-15 -2-25 -3 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 Psat vs. Temperature 3 28 P1dB (dbm) 26 25 24 23 Psat (dbm) 26 24 22 22 21 2 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 Data shown is tuned for 1.85-2.2 GHz, contact HMC Applications for recommended 1.7-1.85 GHz & 2.2-2.5 GHz tuning circuits. 2 Alpha Road, Chelmsford, MA 1824 Phone: 978-25-3343 Fax: 978-25-3373-235

HMC455LP3 / 455LP3E v2.65 Output IP3 vs. Temperature 44 Noise Figure vs. Temperature 1 42 9 8 IP3 (dbm) 4 38 36 34 32 NOISE FIGURE (db) 7 6 5 4 3 2 1 3 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 Power Compression @ 1.95 GHz Pout (dbm), GAIN (db), PAE (%) 6 5 4 3 2 1 Pout Gain PAE -1-5 5 1 15 2 INPUT POWER (dbm) Reverse Isolation vs. Temperature ISOLATION (db) -5-1 -15-2 -25-3 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 Power Compression @ 2.15 GHz Pout (dbm), GAIN (db), PAE (%) Gain, Power & IP3 vs. Supply Voltage @ 1.95 GHz Gain (db), P1dB (dbm), Psat (dbm), IP3 (dbm) 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 6 5 4 3 2 1 44 4 36 32 28 24 2 16 12 Pout Gain PAE -1-5 5 1 15 2 INPUT POWER (dbm) Gain P1dB Psat IP3 8 4.5 4.7 5 5.2 5.5 Vs (V) Data shown is tuned for 1.85-2.2 GHz, contact HMC Applications for recommended 1.7-1.85 GHz & 2.2-2.5 GHz tuning circuits. - 236 2 Alpha Road, Chelmsford, MA 1824 Phone: 978-25-3343 Fax: 978-25-3373

v2.65 HMC455LP3 / 455LP3E ACPR vs. Supply Voltage @ 1.96 GHz CDMA 2, 9 Channels Forward -4 ACPR vs. Supply Voltage @ 2.14 GHz W-CDMA, 64 DPCH -3 ACPR (dbc) -45-5 -55-6 CDMA2 Rev. 8 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels Source ACPR -65 5 7 9 13 15 17 19 21 Channel Output Power (dbm) Absolute Maximum Ratings 4.5V 5V Collector Bias Voltage (Vcc) +6. Vdc RF Input Power (RFIN)(Vs = +5Vdc) +25 dbm Junction Temperature 15 C Continuous Pdiss (T = 85 C) (derate 16 mw/ C above 85 C) 1.4 W Thermal Resistance (junction to ground paddle) 63 C/W Storage Temperature -65 to +15 C Operating Temperature -4 to +85 C 5.5V ACPR (dbc) -35-4 -45-5 -55 WCDMA Frequency : 2.14 GHz Integration BW: 3.84 MHz 64 DPCH 4.5V -6 Source ACPR -65 5 7 9 13 15 17 19 21 Channel Output Power (dbm) 5V 5.5V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Application Circuit TL1 TL2 TL3 TL4 Impedance 5 Ohm 5 Ohm 5 Ohm 5 Ohm Physical Length.33.18.13.4 Electrical Length 34 19 13.5 4 PCB Material: 1 mil Rogers 435, Er = 3.48 Recommended Component Values L1 8.2 nh C1 2.2 µf C2, C3 3. pf C4.9 pf C5 1 pf Data shown is tuned for 1.85-2.2 GHz, contact HMC Applications for recommended 1.7-1.85 GHz & 2.2-2.5 GHz tuning circuits. 2 Alpha Road, Chelmsford, MA 1824 Phone: 978-25-3343 Fax: 978-25-3373-237

v2.65 HMC455LP3 / 455LP3E Outline Drawing Package Information Pin Descriptions NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE.5mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED.5mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] 455 HMC455LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] 455 HMC455LP3E RoHS-compliant Low Stress Injection Molded Plastic 1% matte Sn MSL1 XXXX [1] Max peak refl ow temperature of 235 C [2] Max peak refl ow temperature of 26 C [3] 4-Digit lot number XXXX Pin Number Function Description Interface Schematic 1, 2, 4-9, - 16 N/C This pin may be connected to RF ground. 3 RFIN This pin is AC coupled. An off chip series matching capacitor is required. 1 RFOUT RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. - 238 2 Alpha Road, Chelmsford, MA 1824 Phone: 978-25-3343 Fax: 978-25-3373

v2.65 HMC455LP3 / 455LP3E Evaluation PCB J3 Pin Number Description 1, 2, 3 GND 4, 5, 6 Vs List of Materials for Evaluation PCB 1658 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 2.2 μf Capacitor, Tantalum C2, C3 3. pf Capacitor, 42 Pkg. C4.9 pf Capacitor, 42 Pkg. C5 1 pf Capacitor, 42 Pkg. L1 8.2 nh Inductor, 42 Pkg. HMC455LP3 / HMC455LP3E U1 Power Amplifi er PCB [2] 16492 Evaluation PCB, 1 mils [1] Reference this number when ordering complete evalution PCB [2] Circuit Board Material: Rogers 435, Er = 3.48 The circuit board used in the fi nal application should use RF circuit design techniques. Signal lines should have 5 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Data shown is tuned for 1.85-2.2 GHz, contact HMC Applications for recommended 1.7-1.85 GHz & 2.2-2.5 GHz tuning circuits. 2 Alpha Road, Chelmsford, MA 1824 Phone: 978-25-3343 Fax: 978-25-3373-239