FDS39 FDS39 V N-Channel Dual PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features.7 A, V. R DS(ON) = mω @ V GS = V R DS(ON) = 5 mω @ V GS = 6 V Fast switching speed High performance trench technology for extremely low R DS(ON) High power and current handling capability D SO- D DD 5 6 Q 3 G SG S Absolute Maximum Ratings TA=5 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage V V GSS Gate-Source Voltage ± V I D Drain Current Continuous (Note a).7 A Pulsed P D Power Dissipation for Dual Operation W Power Dissipation for Single Operation (Note a).6 7 Q (Note b). (Note c).9 T J, T STG Operating and Storage Junction Temperature Range 55 to +75 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 7 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS39 FDS39 3 mm 5 units Semiconductor Components Industries, LLC. October-7, Rev. Publication Order Number: FDS39/D
Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note ) W DSS Single Pulse Drain-Source V DD = V, I D =.7 A 75 mj Avalanche Energy I AR Maximum Drain-Source Avalanche Current.7 A Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = 5 µa V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 5 µa, Referenced to 5 C 6 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6 V, V GS = V µa I GSSF Gate Body Leakage, Forward V GS = V, V DS = V na I GSSR Gate Body Leakage, Reverse V GS = V V DS = V na FDS39 On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 5 µa.3 V VGS(th) Gate Threshold Voltage T J Temperature Coefficient I D = 5 µa, Referenced to 5 C 6 mv/ C R DS(on) Static Drain Source V GS = V, I D =.7 A 3 mω On Resistance V GS = 6. V, I D =. A 37 5 V GS = V, I D =.7 A, T J = 5 C 6 I D(on) On State Drain Current V GS = V, V DS = 5 V A g FS Forward Transconductance V DS = V, I D =.7 A S Dynamic Characteristics C iss Input Capacitance V DS = V, V GS = V, pf C oss Output Capacitance f =. MHz 7 pf Reverse Transfer Capacitance 5 pf C rss Switching Characteristics (Note ) t d(on) Turn On Delay Time V DD = V, I D = A, ns t r Turn On Rise Time V GS = V, R GEN = 6 Ω 6 ns t d(off) Turn Off Delay Time 6 5 ns t f Turn Off Fall Time 5 ns Q g Total Gate Charge V DS = V, I D =.7 A, 5 35 nc Q gs Gate Source Charge V GS = V.5 nc Gate Drain Charge 5. nc Q gd Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current.3 A Drain Source Diode Forward V SD V Voltage GS = V, I S =.3 A (Note ).7. V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 7 C/W when mounted on a in pad of oz copper. Pulse Test: Pulse Width < 3µs, Duty Cycle <.% b) 5 C/W when mounted on a. in pad of oz copper c) 35 C/W when mounted on a minimum pad.
Typical Characteristics FDS39 I D, DRAIN CURRENT (A) 6 V GS = V 5.V.V 3.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE..6.. V GS =.V.5V 5.V 6.V V 3 V DS, DRAIN-SOURCE VOLTAGE (V). 6 I D, DRAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage... R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE...6 I D =.7A V GS = V R DS(ON), ON-RESISTANCE (OHM).75.5.5 T A = 5 o C T A = 5 o C I D =. A. -5-5 5 5 75 5 5 75 T J, JUNCTION TEMPERATURE ( o C) 6 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. I D, DRAIN CURRENT (A) V DS = 5V 6 5 o C T A = 5 o C -55 o C 3 5 V GS, GATE TO SOURCE VOLTAGE (V) I S, REVERSE DRAIN CURRENT (A) V GS = V T A = 5 o C 5 o C -55 o C......6... V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3
Typical Characteristics FDS39 V GS, GATE-SOURCE VOLTAGE (V) 6 I D =.7A V DS = V V V CAPACITANCE (pf) 5 5 C RSS C OSS C ISS f = MHz V GS = V 6 3 Q g, GATE CHARGE (nc) 6 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics. I D, DRAIN CURRENT (A). R DS(ON) LIMIT V GS = V R θja = 35 o C/W T A = 5 o C.. DC s ms s V DS, DRAIN-SOURCE VOLTAGE (V) ms µs ms P(pk), PEAK TRANSIENT POWER (W) 3.. t, TIME (sec) R θja = 35 C/W T A = 5 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =.5...5....... t, TIME (sec) P(pk) R θja (t) = r(t) + R θja R θja = 35 C/W t t T J - T A = P * R θja (t) Duty Cycle, D = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design.
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