General Description The MDD/INB uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD/INB is suitable device for SMPS, HID and general purpose applications.. MDDN / MDINB N-Channel MOSFET V, 3.5A,.Ω Features V DS = V = 3.5A @ = V R DS(ON).Ω @ = V Applications Power Supply PFC High Current, High Speed Switching D G D S I-PAK (TO-5) G S Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS V Gate-Source Voltage S ±3 V Continuous Drain Current T C =5 o C 3.5 A T C = o C. A Pulsed Drain Current () M A Power Dissipation T C =5 o C 7.5 W P D Derate above 5 o C.5 W/ o C Repetitive Avalanche Energy () E AR.75 mj Peak Diode Recovery dv/dt (3) dv/dt.5 V/ns Single Pulse Avalanche Energy () E AS 7 mj Junction and Storage Range T J, T stg -55~5 * Id limited by maximum junction temperature o C Thermal Characteristics Characteristics Symbol MDDN / MDIN Unit Thermal Resistance, Junction-to-Ambient () R θja Thermal Resistance, Junction-to-Case () R θjc.85 o C/W
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDDNBRH -55~5 o C D-pak Reel Halogen Free MDINBTH -55~5 o C I-pak Tube Halogen Free Electrical Characteristics (Ta =5 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = 5µA, = V - - Gate Threshold Voltage (th) V DS =, = 5µA. -. Drain Cut-Off Current SS V DS = V, = V - - µa Gate Leakage Current I GSS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) = V, =.75A.7. Ω Forward Transconductance g fs V DS = 3V, =.75A - - S Dynamic Characteristics Total Gate Charge Q g -. Gate-Source Charge Q gs V DS = 8V, =.A, = V (3) -. Gate-Drain Charge Q gd - 3.7 Input Capacitance C iss - 57 Reverse Transfer Capacitance C rss V DS = 5V, = V, f =.MHz -.8 Output Capacitance C oss - Turn-On Delay Time t d(on) - Rise Time t r = V, V DS = 3V, =.A, - 5 Turn-Off Delay Time t d(off) R G = 5Ω (3) - 37 Fall Time t f -. Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I S -. - A V SD I S =.A, = V -. V t rr - 3 ns I F =.A, dl/dt = A/µs (3) Q rr -.5 µc V nc pf ns Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C.. Pulse test: pulse width 3us, duty cycle %, pulse width limited by junction temperature T J(MAX) =5 C. 3. I SD.A, di/dt A/us, V DD BV DSS, R g =5Ω, Starting T J =5 C. L=7.9mH, I AS =.A, V DD =5V, R g =5Ω, Starting T J =5 C,
,Drain Current [A] R DS(ON), (Normalized) Drain-Source On-Resistance 9 8 7 5 3 Fig. On-Region Characteristics 3..5..5..5 V gs =5.V =5.5V =.V =7.V =8.V =.V =5.V. = V. =.3A Notes. 5 μs Pulse Test. T C =5 5 5 5 V DS,Drain-Source Voltage [V] R DS(ON) [Ω ] BV DSS, (Normalized) Drain-Source Breakdown Voltage 3.5 3..5. Fig. On-Resistance Variation with Drain Current and Gate Voltage....9. = V. = 5 μa =.V =V.5 3 5 7 8 9,Drain Current [A]. -5 5 5 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 5 T J, Junction [ o C] Fig. Breakdown Voltage Variation vs. (A) * Notes ;. Vds=3V 5 5-55 R Reverse Drain Current [A]. = V.5µs Pulse test 5 5. 8 [V] Fig.5 Transfer Characteristics......8. V SD, Source-Drain Voltage [V] Fig. Body Diode Forward Voltage Variation with Source Current and 3
, Drain Current [A], Gate-Source Voltage [V] - 8 Note : I =.A D 8 Fig.7 Gate Charge Characteristics Single Pulse T J =Max rated T C =5 Operation in This Area is Limited by R DS(on) Q G, Total Gate Charge [nc] DC V 3V 8V µs ms ms ms µs Capacitance [pf] Z θ JC (t), Thermal Response 8 - Fig.8 Capacitance Characteristics. D=.5.. C iss.5. C rss C oss single pulse V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ;. = V. f = MHz Duty Factor, D=t /t PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =.85 /W - - V DS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area - -5 - -3 - - t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve 8 Power (W) single Pulse R thjc =.85 /W T C = 5, Drain Current [A] E-5 E- E-3.. Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation 5 5 75 5 5 T C, Case [ ] Fig. Maximum Drain Current vs. Case
Physical Dimension TO-5 (DPAK) Dimensions are in millimeters, unless otherwise specified 5
Physical Dimension TO5 (I-PAK) Dimensions are in millimeters, unless otherwise specified
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