OSG60RK2x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R DS(on) Low FOM Extremely low switching loss Good stability and uniformity Advanced GreenMOS TM technology Consumer electronics power supply LCD/LED/PDP Portable digital power management PFC Charger
General Description OSG60RK2x series use advanced GreenMOS TM technology to provide low R DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. V DS@Tjmax I D R DS(ON)@V GS=0V 650V(min) 4A.2Ω(max) TO-25,TO-252,TO-220F Package Information Schematic Diagram Pin Assignment-Top View TO-25 TO-252 TO-220F OSG60RK2A OSG60RK2D OSG60RK2F Absolute Maximum Ratings(TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ±30 V Drain Current-Continuous (Note ) I D 4 A Drain Current- Pulsed (Note 2) I DM 2 A Power Dissipation (Note 3) for TO-25,TO-252 Power Dissipation (Note 3) for TO-220F 24 P D 28.4 W Single Pulsed-Avalanche Energy (Note 6) E AS 00 mj Operation and Storage Junction Temperature T STG,T J -55 to 50 Oriental Semiconductor Copyright reserved 205 2 /
Thermal Characteristics Parameter Symbol Value TO25/TO252 TO220F Unit Thermal Resistance, Junction-to-Case R θjc 4.4 5.2 C/W Thermal Resistance, Junction-to-Ambient (Note 4) R θja 62 62.5 C/W Electrical Characteristics(TA=25 unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test condition 600 V GS=0V, I D=250μA Drain-Source Breakdown Voltage BV DSS 650 70 V V GS=0V,I D=250μA, T j=50 Gate Threshold Voltage V GS(th) 2.0 4.0 V V DS=V GS, I D=250μA.0.2 V GS=0V,I D=2A Drain-Source On-state Resistance R DS(ON) 2.4 Ω V GS=0V,I D=2A, T j=50 Gate-Source Leakage Current I GSS 00 V GS=30V na -00 V GS=-30V Drain-to-Source leakage current I DSS μa V DS=600V,V GS=0V Dynamic Characteristics Input Capacitance C iss 259.9 pf Output Capacitance C oss 2. pf Reverse Transfer Capacitance C rss 0.9 pf Turn-on Delay Time t d(on) 30.9 ns Turn-on Rise Time t r 20.7 ns Turn-Off Delay Time t d(off) 56.3 ns Turn-Off Fall Time t f 28.7 ns V GS = 0V, V DS = 50V, ƒ = MHZ V GS=0V, V DS =380V, R G=25Ω I D =4A Oriental Semiconductor Copyright reserved 205 3 /
Gate Charge Characteristics Total Gate Charge Q g 8.2 nc Gate-Source Charge Q gs 2.2 nc Gate-Drain Charge Q gd 3.4 nc I D = 4A, V DS= 480V, V GS = 0V Body Diode Characteristics Body-diode Forward Current (NOTE 2) I S 4 Pulsed Source Current I SP 2 A V GS<V th Inverse Diode Forward Voltage V SD.3 V I S=4A, V GS=0V Reverse Recovery Time t rr 62 ns I S=4A, V GS=0V Reverse Recovery Charge Q rr.2 μc di/dt = 00A/μs Oriental Semiconductor Copyright reserved 205 4 /
Typical Electrical and Thermal Characteristics I D, Drain-to-Source Current (A) 7 6 7V 0V 5 4 6V 3 2 5V V GS = 4V 0 0 5 0 V DS, Drain-to-Source Voltage (V) Id,Drain Current(A) 0 VDS=20V 00 o C 25 o C 0. 2 4 6 8 0 V GS,Gate to Source Voltage(V) Figure. Typ. Output Characteristics Figure 2. Transfer Characteristics 0000 0 C, Capacitance(pF) 000 00 0 C iss C oss V GS,Gate to Source Voltage(V) 8 6 4 2 C rss 0. 0 20 40 60 80 00 V DS, Drain-to-Source Voltage (V) 0 0 2 4 6 8 0 Q g,gate charge(nc) Figure 3. Typ. Capacitance Figure 4. Gate Charge V (BR)DSS, Drain-to-Source Breakdown Voltage (V) 740 720 700 680 660 640 0 20 40 60 80 00 20 40 60 T J, Temperature ( O C ) R DS(on), Drain-source on-state resistance( ) 2.5 2.0.5.0 0 20 40 60 80 00 20 40 60 T J,Juntion Temperature( o C) Figure 5. Drain-source breakdown voltage Figure 6. Drain-source on-resistance Oriental Semiconductor Copyright reserved 205 5 /
Is,Reverse Drain Current(A) 0 00 o C 25 o C R DS(ON),On-Resistance( ).4.2.0 V GS =7V V GS =0V 0. 0.4 0.6 0.8.0.2 V SD, Source to Drain Voltage(V) 0.8 0 2 3 4 I D,Drain Current(A) Figure 7. I S-V SD Figure 8. R DS(ON)-I D 00 00 0 0 I D,Drain Current(A) 0. R DS(ON) Limited 00 s ms 0ms 00ms I D,Drain Current(A) 0. R DS(ON) Limited 00 s ms 0ms 00ms DC DC 0.0 0 00 000 V DS,Drain to Source Voltage(V) 0.0 0 00 000 V DS,Drain to Source Voltage(V) Figure 9. Safe Operation Area for TO25/TO252 Figure 0. Safe Operation Area for TO220F Oriental Semiconductor Copyright reserved 205 6 /
Test circuits and waveforms Figure : Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Figure 4: Diode Recovery Test Circuit & Waveforms Oriental Semiconductor Copyright reserved 205 7 /
Package Information Figure TO-25 PACKAGE OUTLINE DIMENSION Symbol Dimension In Millimeters Dimension In Inches Min Nom Max Min Nom Max A 2.200 2.300 2.400 0.087 0.09 0.094 A2 0.970.070.70 0.038 0.042 0.046 b 0.680 0.780 0.900 0.027 0.03 0.035 b2 0.000 0.040 0.00 0.000 0.002 0.004 b2' 0.000 0.040 0.00 0.000 0.002 0.004 b3 5.200 5.330 5.500 0.205 0.20 0.27 c 0.430 0.530 0.630 0.07 0.02 0.025 D 5.980 6.00 6.220 0.235 0.240 0.245 D 5.300REF 0.209REF E 6.400 6.600 6.800 0.252 0.260 0.268 E 4.630 - - 0.82 - - e 2.286BSC 0.090BSC H 6.220 6.520 6.820 0.639 0.650 0.662 L 9.50 9.400 9.650 0.360 0.370 0.380 L3 0.880.020.280 0.035 0.040 0.050 L5.650.800.950 0.065 0.07 0.077 Oriental Semiconductor Copyright reserved 205 8 /
Package Information Figure2 TO-252 PACKAGE OUTLINE DIMENSION Oriental Semiconductor Copyright reserved 205 9 /
Package Information Figure3 TO220F PACKAGE OUTLINE DIMENSION Symbol Dimension In Millimeters Dimension In Inches Min Nom Max Min Nom Max E 0.000 0.60 0.320 0.394 0.400 0.406 E 9.940 0.040 0.40 0.39 0.395 0.399 E2 9.360 9.460 9.560 0.369 0.372 0.376 A 4.500 4.700 4.900 0.77 0.85 0.93 A 2.340 2.540 2.740 0.092 0.00 0.08 A2 0.430-0.480 0.07-0.09 A4 2.660 2.760 2.860 0.05 0.09 0.3 A5 c 0.450.00REF 0.525 0.600 0.08 0.039BSC 0.02 0.024 D 5.670 5.870 6.070 0.67 0.625 0.633 Q H e ФP L 2.780 9.40REF 6.70REF 2.54REF 3.8REF 2.980 3.80 0.503 0.370REF 0.264REF 0.00REF 0.25REF 0.5 0.59 L 2.830 2.930 3.030 0. 0.5 0.9 L2 7.700 7.800 7.900 0.303 0.307 0.3 ФP.400.500.600 0.055 0.059 0.063 ФP2 0.950.000.050 0.037 0.039 0.04 ФP3-3.450 - - 0.36 - ϴ 3 o 5 o 7 o 3 o 5 o 7 o ϴ2-45 o - - 45 o - DEP 0.050 0.00 0.50 0.002 0.004 0.006 F.000.500 2.000 0.039 0.059 0.079 F2 3.800 3.900 4.000 0.543 0.547 0.55 F3 3.200 3.300 3.400 0.26 0.30 0.34 F4 5.300 5.400 5.500 0.209 0.23 0.27 G 7.800 8.000 8.200 0.307 0.35 0.323 G 6.900 7.000 7.00 0.272 0.276 0.280 G3.250.350.450 0.049 0.053 0.057 b.230.280.380 0.048 0.050 0.054 b2 0.750 0.800 0.900 0.030 0.03 0.035 K 0.650 0.700 0.750 0.026 0.028 0.030 R - 0.5REF - - 0.020REF - Oriental Semiconductor Copyright reserved 205 0 /
Ordering Information Package Units/Tape Tapes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO25 75 66 4950 6 29700 TO252 Option 75 66 4950 6 29700 TO252 Option2 2500 2 5000 5 25000 TO220F 50 20 000 6 6000 Note. Calculated continuous current based on maximum allowable junction temperature. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. PD is based on max. junction temperature, using junction-to-case thermal resistance. 4. The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. 5. Declared by design, not subject to production. 6. V DD=50V, R G=25Ω, L=20mH, Starting T J=25 C. Oriental Semiconductor Copyright reserved 205 /