General Description MDS1525 Single N-channel Trench MOSFET 3V, 16.9A, 1.1mΩ The MDS1525 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1525 is suitable for DC/DC converter and general purpose applications. 5(D) 6(D) 7(D) (D) (G) 3(S) 2(S) 1(S) Features = 3V = 16.9A @ = 1V < 1.1mΩ @ = 1V < 1.9mΩ @ =.5V 1% UIL Tested 1% Rg Tested G D S MDS1525 Single N-Channel Trench MOSFET 3V Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S 3 V Gate-Source Voltage S ±2 V T C=25 o C 16.9 Continuous Drain Current (1) Power Dissipation T C=7 o C 13.6 T A=25 o C 11. (3) T A=7 o C 9.5 (3) Pulsed Drain Current M A T C=25 o C 5.1 T C=7 o C 3.3 T A=25 o C 2.5 (3) T A=7 o C 1.6 (3) Single Pulse Avalanche Energy (2) E AS 3.6 mj Junction and Storage Temperature Range T J, T stg -55~15 P D A W o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 5 Thermal Resistance, Junction-to-Case R θjc 2.2 o C/W June. 211. Version1.2 1
Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status MDS1525URH -55~15 o C SOIC- Tape & Reel 3 units Halogen Free Electrical Characteristics (T J = 25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25µA, = V 3 - - Gate Threshold Voltage (th) =, = 25µA 1.3 1.9 2.7 V Drain Cut-Off Current SS = 3V, = V - - 1 T J=55 o C - - 5 µa Gate Leakage Current I GSS = ±2V, = V - - ±.1 = 1V, = 9A -. 1.1 Drain-Source ON Resistance T J=5 o C -. 1.6 mω =.5V, = 7A -. 1.9 Forward Transconductance g fs = 5V, = 9A - 27. - S Dynamic Characteristics Total Gate Charge Q g(1v) 9.1 13. 16.9 Total Gate Charge Q g(.5v) = 15.V, = 9A,.3 6.2.1 Gate-Source Charge Q gs = 1V - 2.3 - nc Gate-Drain Charge Q gd - 2. - Input Capacitance 55 792 9 Reverse Transfer Capacitance C rss = 15.V, = V, f = 1.MHz 5 7 11 pf Output Capacitance C oss 1 15 2 Turn-On Delay Time t d(on) - 5. - Rise Time t r = 1V, = 15.V, - 1.9 - Turn-Off Delay Time t d(off) = 9A, R G = 3.Ω - 21.1 - ns Fall Time t f - 7.3 - Gate Resistance R g f=1 MHz.5 1. 3. Ω Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V SD I S = 9A, = V -.3 1.1 V Body Diode Reverse Recovery Time t rr I F = 9A, dl/dt = 1A/µs - 21.9 32. ns Body Diode Reverse Recovery Charge Q rr - 13. 19.5 nc MDS1525 Single N-Channel Trench MOSFET 3V Note : 1. Surface mounted FR- board by JEDEC (jesd51-7) 2. E AS is tested at starting Tj = 25, L =.1mH, I AS = 16.2A, V DD = 27V, = 1V. 3. T < 1sec. June. 211. Version1.2 2
, (Normalized) Drain-Source On-Resistance 2 15 1 5 1. 1.6 1. 1.2 1...V.V Fig.1 On-Region Characteristics =1V =9A 3.5V.5V 5.V = 1V..5 1. 1.5 2. 3.V Drain-Source On-Resistance [mω] [mω ], Drain-Source On-Resistance 15 9 6 3 2 1 =.5V = 1V 3 5 1 15 2 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage T A = 25 = 9A MDS1525 Single N-Channel Trench MOSFET 3V.6-5 -25 25 5 75 1 5 15 T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature 2 6 1, Gate to Source Volatge [V] Fig. On-Resistance Variation with Gate to Source Voltage 2 = 5V 1 1 = V 16 T A =25 R, Reverse Drain Current [A] 1 1-1 T A =25 1 2 3 5, Gate-Source Voltage [V] Fig.5 Transfer Characteristics.3..5.6.7..9 1. V SD, Source-Drain voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature June. 211. Version1.2 3
, Gate-Source Voltage [V] 1 2 1 6 2 Note : I = 9A D 3 6 9 15 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics Operation in This Area is Limited by R DS(on) Capacitance [pf] 9 6 3 C oss C rss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ; 1. = V 2. f = 1 MHz 5 1 15 2 25 3 2 16 Fig. Capacitance Characteristics MDS1525 Single N-Channel Trench MOSFET 3V 1 1 1 1 ms 1 ms 1 ms 1s 1s DC 1-1 Single Pulse T J =Max rated T C =25 1-1 1 1 1 1 2 Fig.9 Maximum Safe Operating Area 25 5 75 1 5 15 T C, Case Temperature [ ] Fig.1 Maximum Drain Current vs. Case Temperature 1 2 Z θ JC, Thermal Response 1 1 1.2 1-1 D=.5.2.1.5.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C 1-2 1-1 -3 1-2 1-1 1 1 1 1 2 1 3 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve June. 211. Version1.2
Physical Dimensions Leads, SOIC Dimensions are in millimeters unless otherwise specified MDS1525 Single N-Channel Trench MOSFET 3V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. June. 211. Version1.2 5