GNSS LOW NOISE AMPLIFIER

Similar documents
GNSS LOW NOISE AMPLIFIER GaAs MMIC

WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC

GNSS LOW NOISE AMPLIFIER GaAs MMIC

GPS LOW NOISE AMPLIFIER GaAs MMIC. -2.0dBm GND RFOUT

UHF BAND LOW NOISE AMPLIFIER GaAs MMIC

Low Noise Amplifier with Bypass for LTE

WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC

UHF BAND LOW NOISE AMPLIFIER GaAs MMIC

GNSS LOW NOISE AMPLIFIER

2GHz BAND LOW NOISE AMPLIFIER

Wide Band Low Noise Amplifier GaAs MMIC

LOW NOISE AMPLIFIER GaAs MMIC. -4.0dBm

2-way Active Splitter GaAs MMIC

GPS Front-End Module

GPS Front-End Module

GPS and GLONASS Front-End Module

700MHz Band Application

800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC

PDC Dual Band LNA GaAs MMIC

HIGH POWER SPDT SWITCH GaAs MMIC

800MHz BAND FRONT-END GaAs MMIC

DPDT SWITCH GaAs MMIC

High Isolation SP4T SWITCH

High Isolation SPDT SWITCH

SP5T SWITCH GaAs MMIC

W-LAN/WiMAX Application

HIGH POWER SP3T SWITCH GaAs MMIC

SPDT SWITCH GaAs MMIC

SP4T SWITCH GaAs MMIC

DPDT SWITCH GaAs MMIC

SP3T SWITCH GaAs MMIC

30dB P IN =25dBm. 0.50dB P IN =25dBm. 33dB P IN =25dBm. 21dB

DPDT SWITCH GaAs MMIC

SPDT SWITCH GaAs MMIC

SPDT SWITCH GaAs MMIC

SP3T SWITCH GaAs MMIC

HIGH POWER SP4T SWITCH GaAs MMIC

SP10T ANTENNA SWITCH GaAs MMIC

DPDT SWITCH GaAs MMIC

WIDE BAND AGC AMPLIFIER GaAs MMIC

SPDT SWITCH GaAs MMIC

SPDT SWITCH GaAs MMIC

MEDIUM POWER AMPLIFIER GaAs MMIC

NJG1175KG1. 5 GHz Low Noise Amplifier with Bypass function. H =V CTL(H), L =V CTL(L)

DPDT SWITCH GaAs MMIC

Satellite Broadcasting Application

Product Specifications Approval Sheet

WIDE BAND AGC AMPLIFIER GaAs MMIC

CMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description

Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter

CMD233C GHz Distributed Low Noise Amplifier. Features. Functional Block Diagram. Description

4-8 GHz Low Noise Amplifier

2-20 GHz Driver Amplifier

CMD167P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.0 V, T A = 25 o C, F=12 GHz

MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C

HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram

CMD157P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.

Gain Control Range db

Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin connections and Package Marking

50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC

CMD119P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.6 V, T A = 25 o C, F=8GHz

Features. = +25 C, Vdd = +10 V, Idd = 350 ma

CMD158C GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.0 V, T A = 25 o C, F = 11 GHz

30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC

CMD132P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.

EVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifier. Pin Configuration/Functional Diagram/Typical Application Circuit MAX2659 BIAS

Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin Connections and Package Marking

CMD283C GHz Ultra Low Noise Amplifier. Features. Functional Block Diagram. Description

20 MHz to 500 MHz IF Gain Block ADL5531

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*

5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC

Features. = +25 C, Vdd = +5V, Idd = 400mA [1]

Data Sheet. AMMP to 32 GHz GaAs Low Noise Amplifier. Description. Features. Specifications (Vd=3.0V, Idd=65mA) Applications.

Features. = +25 C, Vdd = +7V, Idd = 1340 ma [1]

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

Features. = +25 C, Vdd 1, 2, 3 = +3V

5.5 GHz to 8.6 GHz, GaAs, MMIC, I/Q Upconverter HMC6505A

Features. Specifications

Parameter Min. Typ. Max. Units Frequency Range GHz

EVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifiers

10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114

20 MHz to 500 MHz IF Gain Block ADL5531

MGA Current Adjustable Low Noise Amplifier

GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E

HMC486LP5 / 486LP5E LINEAR & POWER AMPLIFIERS - SMT. SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7-9 GHz. Typical Applications.

6-18 GHz Low Phase Noise Amplifier

Ultra-linear Mixer with Integrated IF Amp and LO Buffer

Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature

HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications

30 MHz to 6 GHz RF/IF Gain Block ADL5544

SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,

Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V

PRELIMINARY DATA SHEET: CKRF3510MM34

1-24 GHz Distributed Driver Amplifier

Data Sheet, Rev. 2.3, Sept BGA428. Gain and PCS Low Noise Amplifier. RF & Protection Devices

>10 W, GaN Power Amplifier, 0.01 GHz to 1.1 GHz HMC1099

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

5.5 GHz to 14 GHz, GaAs MMIC Fundamental Mixer HMC558A. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION

50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC

Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]

Transcription:

GNSS LOW NOISE AMPLIFIER GENERAL DESCRIPTION The NJG11KA1 is a low noise amplifier GaAs MMIC designed for GNSS (Global Navigation Satellite Systems). This amplifier achieves high gain and a good balance between ultra-low noise figure and excellent VSWR, while low current consumption and high IP, respectively. The NJG11KA1 operates from +1.V to +.V supply voltage range and current consumes is as low as.ma. Also, the ESD protection circuit is integrated into the IC to achieve high ESD tolerance. An ultra-small and easy mounting package of FLP-A1 is adopted. PACKAGE OUTLINE NJG11KA1 APPLICATIONS GNSS applications, like GPS, Galileo, GLONASS and COMPASS. FEATURES Low supply voltage 1.V/.V Low current consumption.ma typ. @ V DD =.V 1.mA typ. @ V DD =1.V High gain 1.dB typ. @ f=17mhz, V DD =.V Low noise figure.db typ. @ f=17mhz, V DD =.V High Input IP -.dbm typ. @ f=17mhz, V DD =.V Small package FLP-A1 (Package size: 1.mm x 1.mm x.mm typ.) RoHS compliant and halogen free, MSL1 PIN CONFIGURATION (Top View) RFIN GND NC(GND) GND GND RFOUT 1 Pin connection 1. RFOUT. GND. GND. RFIN. GND. NC (GND) 1 Pin INDEX Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.1-9- - 1 -

ABSOLUTE MAXIMUM RATINGS NJG11KA1 Ta=+ C, Zs=Zl=Ω PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Supply voltage V DD. V Input power P IN V DD =.V +1 dbm Power dissipation P D -layer FR PCB with through-hole (7.mmx7.mm), T j =1 C mw Operating temperature T opr - to + C Storage temperature T stg - to +1 C ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS) General conditions: V DD =.V, Ta=+ C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Supply voltage V DD 1. -. V Supply current 1 I DD 1 RF OFF, VDD=.V -.. ma Supply current I DD RF OFF, VDD=1.V - 1.. ma - -

ELECTRICAL CHARACTERISTICS (RF CHARACTERISTICS) General conditions: V DD =.V, f RF =1.7GHz, Ta=+ C, Zs=Zl=Ω, with application circuit PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Small signal gain Gain1. 1.. db Noise figure Input power at 1dB gain compression point 1 Input rd order intercept point 1 NF1 Exclude PCB, Connector Losses(.dB) -..9 db P-1dB(IN)1-19. -1. - dbm IIP_1 f1=f RF, f=f1+khz, Pin=-dBm -. -. - dbm RF input VSWR 1 VSWRi1-1.. - RF output VSWR 1 VSWRo1-1.. - ELECTRICAL CHARACTERISTICS (RF CHARACTERISTICS) General conditions: V DD =1.V, f RF =1.7GHz, Ta=+ C, Zs=Zl=Ω, with application circuit PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Small signal gain Gain -. - db Noise figure Input power at 1dB gain compression point Input rd order intercept point NF Exclude PCB, Connector Losses(.dB) -. - db P-1dB(IN) - -. - dbm IIP_ f1=f RF, f=f1+khz, Pin=-dBm - -. - dbm RF input VSWR VSWRi - 1. - - RF output VSWR VSWRo - 1. - - - -

TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 RFOUT RF output and voltage supply terminal. GND Ground terminal (V), Connect to the PCB ground plane. GND Ground terminal (V), Connect to the PCB ground plane. RFIN RF input terminal. DC blocking capacitor is not required. An external matching circuit is required. GND Ground terminal (V), Connect to the PCB ground plane. NC(GND) No connected terminal. This terminal is not connected with internal circuit. Please connect to the PCB ground Plane. - -

ELECTRICAL CHARACTERRISTICS (V DD =.V) (Conditions: Ta=+ C, V DD =.V, Zs=Zl=Ω, with application circuit.) 1 Pout vs. Pin (VDD=.V, frf=17mhz) Gain Gain, IDD vs. Pin (VDD=.V, frf=17mhz) 9 Pout (dbm) - Pout Gain (db) 1 1 7 IDD (ma) - 1 IDD -1 P-1dB(IN)=-1.dBm - - - - - Pin (dbm) P-1dB(IN)=-1.dBm - - - - Pin (dbm) Pout, IM vs. Pin (VDD=.V, f1=17mhz, f=f1+khz) OIP, IIP vs. frequency (VDD=.V, f1=1~1mhz, f=f1+khz, Pin=-dBm) Pout, IM (dbm) - - - Pout IM - IIP=-.dBm - - - - - Pin (dbm) OIP (dbm) OIP 1 IIP 1 1 - - - 1 1 17 1 19 1 frequency (MHz) - IIP (dbm). NF, Gain vs. frequency (VDD=.V, f=1~1mhz) k factor vs. frequency (VDD=.V, f=mhz~ghz). Noise Figure (db). 1. 1.. NF Gain 1 Gain (db) k factor 1 (NF: Exclude PCB, Connector Losses). 1 1 1 1 1 frequency (MHz) 1 frequency (GHz) - -

ELECTRICAL CHARACTERRISTICS (V DD =.V) (Conditions: V DD =.V, Zs=Zl=Ω, with application circuit.) Gain, NF vs Temperature (VDD=.V, f=17mhz). - P-1dB(IN) vs. Temperature (VDD=.V, f=17mhz). -1 Gain (db) 1 19 Gain NF. 1. 1.. Noise Figure (db) P-1dB(IN) (dbm) -1-1 - - - P-1dB(IN) (NF: Exclude PCB, Connector Losses). - - - - - - - OIP, IIP vs. Temperature (VDD=.V, f1=17mhz, f=f1+khz, Pin=-dBm).. VSWR vs. Temperature (VDD=.V, f=17mhz) VSWRi VSWRo OIP (dbm) 1 19 17 OIP IIP 1 IIP (dbm) -1 - VSWR... 1. 1. 1 -. 1 - - - -. - - - IDD vs. Temperature (VDD=.V, RF OFF) IDD (ma) IDD 1 - - - - -

ELECTRICAL CHARACTERRISTICS (V DD =1.V) (Conditions: Ta=+ C, V DD =1.V, Zs=Zl=Ω, with application circuit.) Pout vs. Pin (VDD=1.V, frf=17mhz) Gain, IDD vs. Pin (VDD=1.V, frf=17mhz) Gain 7 Pout (dbm) - - -1 Pout Gain (db) 1 1 1 IDD IDD (ma) - P-1dB(IN)=-17.dBm - - - - - Pin (dbm) 1 P-1dB(IN)=-17.dBm - - - - Pin (dbm) Pout, IM vs. Pin (VDD=1.V, f1=17mhz, f=f1+khz) OIP, IIP vs. frequency (VDD=1.V, f1=1~1mhz, f=f1+khz, Pin=-dBm) Pout, IM (dbm) Pout - - - IM - IIP=-.dBm - - - - - Pin (dbm) OIP (dbm) 1 OIP 1 1 IIP - - - 1 1 17 1 19 1 frequency (MHz) - - IIP (dbm). NF, Gain vs. frequency (VDD=1.V, f=1~1mhz) Noise Figure (db).. 1. 1. NF Gain 1 1 Gain (db). 1 (NF: Exclude PCB, Connector Losses). 1 1 1 1 frequency (MHz) - 7 -

ELECTRICAL CHARACTERRISTICS (V DD =1.V) (Conditions: V DD =1.V, Zs=Zl=Ω, with application circuit.) 1 Gain, NF vs Temperature (VDD=1.V, f=17mhz). - P-1dB(IN) vs. Temperature (VDD=1.V, f=17mhz). -1 Gain (db) 19 17 1 Gain NF. 1. 1.. Noise Figure (db) P-1dB(IN) (dbm) -1-1 - - - P-1dB(IN) (NF: Exclude PCB, Connector Losses) 1. - - - - - - - OIP, IIP vs. Temperature (VDD=1.V, f1=17mhz, f=f1+khz, Pin=-dBm) 17 1-1.. VSWR vs. Temperature (VDD=1.V, f=17mhz) VSWRi VSWRo OIP (dbm) 1 1 1 1 11 OIP IIP - IIP (dbm) - - - - VSWR... 1. 1. -7. 9 - - - -. - - - IDD vs. Temperature (VDD=1.V, RF OFF) k factor vs. Temperature (VDD=1.V, f=mhz~ghz) 1 IDD (ma) IDD k factor - o C - o C - o C 1 o C + o C + o C - - - + o C 1 frequency [GHz] - -

ELECTRICAL CHARACTERRISTICS (Conditions: Ta=+ C, Zs=Zl=Ω, with application circuit.) Gain, NF vs. VDD (f=17mhz). -1 P-1dB(IN) vs. VDD (f=17mhz). -1 Gain (db) Gain 1 1 1 NF... 1. 1.. (NF: Exclude PCB, Connector Losses). 1. 1...... VDD (V) Noise Figure (db) P-1dB(IN) (dbm) -1-1 -17 - -19 P-1dB(IN) - -1 1. 1...... VDD (V) OIP (dbm) 1 1 1 OIP, IIP vs. VDD (f1=17mhz, f=f1+khz, Pin=-dBm) OIP IIP - - - - IIP (dbm) VSWR..... 1. 1.. VSWRi VSWRo VSWR vs. VDD (f=17mhz) - 1. 1...... VDD (V). 1. 1...... VDD (V) IDD vs. VDD (RF OFF) IDD (ma) IDD 1 1. 1...... VDD (V) - 9 -

ELECTRICAL CHARACTERRISTICS (V DD =.V) (Conditions: Ta=+ C, V DD =.V, Zs=Zl=Ω, with application circuit.) VSWR S1, S1 S11, S Zin, Zout S11, S (MHz to GHz) S1, S1 (MHz to GHz) - -

ELECTRICAL CHARACTERRISTICS (V DD =1.V) (Conditions: Ta=+ C, V DD =1.V, Zs=Zl=Ω, with application circuit.) VSWR S1, S1 S11, S Zin, Zout S11, S (MHz to GHz) S1, S1 (MHz to GHz) - 11 -

APPLICATION CIRCUIT (Top View) RF IN L1.nH RFIN GND GND GND NC(GND) RFOUT 1 L 1nH L.1nH C1 1.pF RF OUT 1 Pin INDEX C pf V DD TEST PCB LAYOUT (Top View) Parts list: Parts ID Comments RF IN L1 C1 L L C RF OUT L1 to L C1, C MURATA LQPT_ Series MURATA GRM Series 1 Pin INDEX V DD PCB (FR-): t=.mm MICROSTRIP LINE WIDTH =.mm (Z =Ω) PCB SIZE=1.mm x 1.mm Caution: In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. - 1 -

MEASUREMENT BLOCK DIAGRAM S parameter Measurements V DD VDD=.9V RF Input DUT RF Output Port1 Port Network Analyzer S parameter Measurement Block Diagram IIP Measurements freq1 Signal Generator Signal Generator freq Isolator Isolator Power. Comb. db Attenuator RF Input DUT RF Output IF and IM Measurement Block Diagram for IIP V DD Spectrum Analyzer - 1 -

Noise Figure Measurements Measuring instruments NF Analyzer : Agilent 97A, 97A Noise Source : Agilent A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages : 1 Average mode : Point Bandwidth : MHz Loss comp : off Tcold : setting the temperature of noise source (.1K) NF Analyzer (Agilent 97A, 97A) Noise Source (Agilent A) * Noise source and NF analyzer Input (Ω) Noise Source Drive Output are connected directly. Calibration Setup NF Analyzer (Agilent 97A, 97A) Noise Source (Agilent A) * Noise source and DUT, IN DUT OUT Input (Ω) Noise Source Drive Output DUT and NF analyzer are connected directly. Measurement Setup - 1 -

PACKAGE OUTLINE (FLP-A1) 1....1.. 1.. 1......1.1.1. Unit:mm...1 Unit: mm Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 1 -