Si36DS N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A).57 @ V GS = V 3.5 3.9 @ V GS =.5 V. FEATURES TrenchFET Power MOSFET % R g Tested - TO-36 (SOT-3) G 3 D S Top View Si36DS (A6)* *Marking Code Ordering Information: Si36DS-T ABSOLUTE MAXIMUM RATINGS (T A = 5 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V DS 3 Gate-Source Voltage V GS V Continuous Drain Current (T J = 5 C) a, b T A = 5 C 3.5 T A = 7 C. A Pulsed Drain Current M 6 Continuous Source Current (Diode Conduction) a, b I S.5 T A = 5 C.5 Maximum Power Dissipation a, b T A = 7 C P D. W Operating Junction and Storage Temperature Range T J, T stg -55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientto a t 5 sec Steady State R thja 3 C/W Notes a. Surface Mounted on FR Board. b. t 5 sec. Document Number: 77 S-373 Rev. C, 5-Sep-3
Si36DS SPECIFICATIONS (T J = 5 C UNLESS OTHERWISE NOTED) Static Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage V (BR)DSS V DS = V, = 5 A 3 Gate Threshold Voltage V GS(th) V DS = V GS, = 5 A V Gate-Body Leakage I GSS V DS = V, V GS = V na Zero Gate Voltage Drain Current SS V DS = 3 V, V GS = V, T J = 55 C V DS = 3 V, V GS = V.5 On-State Drain Current a (on) V DS.5 V, V GS =.5 V V DS.5 V, V GS = V 6 V GS = V, = 3.5 A.6.57 Drain-Source On-State Resistance a r DS(on) V GS =.5 V, =. A.7.9 A A Forward Transconductance a g fs V DS =.5 V, = 3.5 A 6.9 S Diode Forward Voltage a V SD I S =.5 A, V GS = V.. V Dynamic b Gate Charge Q g V DS = 5 V, V GS = 5 V, = 3.5 A. 7 Total Gate Charge Q gt.5 nc Gate-Source Charge Q gs V DS = 5 V, V GS = V, = 3.5 A.9 Gate-Drain Charge Q gd.35 Gate Resistance R g.5. Input Capacitance C iss 555 Reverse Transfer Capacitance C rss 6 Output Capacitance C oss V DS = 5 V, V GS = V, f= MHz pf Switching Turn-On Delay Time t d(on) 9 Rise Time t r V DD = 5 V, R L = 5 7.5 Turn-Off Delay Time t d(off) A, V GEN = V, R G = 6 7 35 Fall Time t f 5. ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 s, duty cycle %. Document Number: 77 S-373 Rev. C, 5-Sep-3
Si36DS TYPICAL CHARACTERISTICS (5 C UNLESS NOTED) 6 Output Characteristics 6 Transfer Characteristics V GS = thru 5 V - Drain Current (A) V - Drain Current (A) T C = 5 C 5 C 3 thru V -55 C 6 V DS - Drain-to-Source Voltage (V) 3 5 V GS - Gate-to-Source Voltage (V).5 On-Resistance vs. Drain Current Capacitance 7 V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( )..3... 6 6 V DS = 5V = 3.5 A V GS =.5 V - Drain Current (A) Gate Charge V GS = V C - Capacitance (pf) r DS(on) - On-Resistance ( ) (Normalized) 6 5 3 C rss 6 3.6.... C oss V GS = V = 3.5 A C iss V DS - Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature 6.6-5 -5 5 5 75 5 5 Q g - Total Gate Charge (nc) T J - Junction Temperature ( C) Document Number: 77 S-373 Rev. C, 5-Sep-3 3
Si36DS TYPICAL CHARACTERISTICS (5 C UNLESS NOTED) Source-Drain Diode Forward Voltage.5 On-Resistance vs. Gate-to-Source Voltage. - Source Current (A) I S T J = 5 C T J = 5 C r DS(on) - On-Resistance ( ).3.. = 3.5 A....6. V SD - Source-to-Drain Voltage (V)... 6 V GS - Gate-to-Source Voltage (V). Threshold Voltage Single Pulse Power. = 5 A Variance (V) V GS(th) -. -. -. Power (W) 6 T A = 5 C -.6 -. -5-5 5 5 75 5 5 T J - Temperature ( C).. Time (sec) 5 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance.. - Duty Cycle =.5...5. Single Pulse Notes: P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = 3 C/W 3. T JM - T A = P DM Z (t) thja. Surface Mounted -3 - - 5 Square Wave Pulse Duration (sec) Document Number: 77 S-373 Rev. C, 5-Sep-3
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