Optocoupler, Phototransistor Output, High Reliability, 53 V RMS, Low Input Current FEATURES A C 1 2 4 3 C E Operating temperature from -55 C to +11 C Good CTR linearity depending on forward current Isolation test voltage, 53 V RMS High collector emitter voltage, V CEO = 8 V Low saturation voltage Fast switching times Low CTR degradation Temperature stable Low coupling capacitance End stackable,.1" (2.54 mm) spacing High common mode interference immunity Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The 11 C rated feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of > 8. mm are achieved with option 6 and 8. This version complies with IEC 695 (DIN VDE 85) for reinforced insulation up to an operation voltage of 4 V RMS or DC. Specifications subject to change. APPLICATIONS AC adapters SMPS PLC Factory automation Game consoles AGENCY APPROVALS UL1577, file no. E52744 cul tested to CSA 22.2 bulletin 5A DIN EN 6747-5-5 (VDE 884-5), available with option 1 BSI IEC 695; IEC 665 FIMKO EN 665, EN 695-1 CQC GB8898-21 ORDERING INFORMATION V O 6 1 8 A - # X # # T DIP-4 Option 6 7.62 mm 1.16 mm PART NUMBER CTR BIN PACKAGE OPTION TAPE AND REEL Option 7 Option 9 > 8 mm > 8 mm Option 8 9.27 mm typ. AGENCY CERTIFIED/PACKAGE CTR (%) 1 ma UL, cul, BSI, FIMKO 5 to 6 63 to 125 1 to 2 16 to 32 DIP-4-2 -3-4 SMD-4, option 9 - -2X9T - - VDE, UL, cul, BSI, FIMKO 5 to 6 63 to 125 1 to 2 16 to 32 DIP-4, 4 mil, option 6 - - - -4X16 SMD-4, option 7 - -2X17T -3X17T -4X17T SMD-4, option 8 - - -3X18T - Note Additional options may be possible, please contact sales office. Rev. 1.9, 27-Aug-15 1 Document Number: 83432 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t p 1 μs I FSM 1.5 A LED power dissipation at 25 C P diss 7 mw OUTPUT Collector emitter voltage V CEO 8 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM 1 ma Ouput power dissipation at 25 C P diss 15 mw COUPLER Isolation test voltage (RMS) t = 1 min V ISO 53 V RMS Total power dissipation P tot 2 mw Operation temperature T amb -55 to +11 C Storage temperature range T stg -55 to +15 C Soldering temperature 2 mm from case, 1 s T sld 26 C Note Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. P tot - Total Power Dissipation (mw) 25 2 15 1 5 Coupled device Detector LED 2 4 6 8 1 12 T amb - Ambient Temperature ( C) Fig. 1 - Total Power Dissipation vs. Ambient Temperature Rev. 1.9, 27-Aug-15 2 Document Number: 83432 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 5 ma V F 1 1.1 1.65 V Reverse current V R = 6 V I R.1 1 μa Junction capacitance V R = V, f = 1 MHz C j 13 pf OUTPUT Collector emitter leakage current V CE = 1 V I CEO 1 2 na Collector emitter capacitance V CE = 5 V, f = 1 MHz C CE 5.2 pf Collector emitter breakdown voltage I C = 1 ma BV CEO 8 V Emitter collector breakdown voltage I E = 1 μa BV ECO 7 V COUPLER Collector emitter saturation voltage I F = 1 ma, I C = 2.5 ma V CEsat.25.4 V Coupling capacitance f = 1 MHz C C.4 pf Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT CTR 5 6 % I C /I F I F = 1 ma, V CE = 5 V -2 CTR 63 125 % -3 CTR 1 2 % -4 CTR 16 32 % SWITCHING CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION CTR BIN SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED Rise and fall time I F = 1 ma, V CC = 5 V, R L = 75 t r, t f 2 μs Turn-on time t on 3 μs I F = 1 ma, V CC = 5 V, R L = 75 Turn-off time t off 2.3 μs Cut-off frequency I F = 1 ma, V CC = 5 V, R L = 75 f ctr 1 khz SATURATED Turn-on time I F = 1 ma t on 4.2 μs Turn-off time I F = 1 ma t off 23 μs Rise time I F = 1 ma t r 3 μs Fall time I F = 1 ma t f 14 μs Rev. 1.9, 27-Aug-15 3 Document Number: 83432 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
I F I F + 5 V I F I C t p t R G = 5 Ω t p T =.1 t p = 5 µs 5 Ω R L Channel I Channel II Oscilloscope R L = 1 MΩ C L = 2 pf 1 % 9 % 1 % t r t d t on t s t f t 95 184-3 R G t p = 5 Ω T =.1 t p = 5 µs 95 1843-1 Fig. 2 - Test Circuit, Non-Saturated Operation I F I F = 1 ma 5 Ω 1 kω + 5 V Channel I Channel II Fig. 3 - Test Circuit, Saturated Operation I C Oscilloscope R L 1 MΩ 2 pf C L t p t d t r t on (= t d + t r ) t off Pulse duration t s Delay time t f Rise time t off (= t s + t f ) Turn-on time Fig. 4 - Switching Times Storage time Fall time Turn-off time 96 11698 SAFETY AND INSULATION RATINGS PARAMETER SYMBOL VALUE UNIT MAXIMUM SAFETY RATINGS Output safety power P SO 265 mw Input safety current I si 13 ma Safety temperature T S 15 C Comparative tracking index CTI 175 INSULATION RATED PARAMETERS Maximum withstanding isolation voltage V ISO 53 V RMS Maximum transient isolation voltage V IOTM 8 V peak Maximum repetitive peak isolation voltage V IORM 89 V peak Insulation resistance T amb = 25 C, V DC = 5 V R IO 1 12 Isolation resistance T amb = 1 C, V DC = 5 V R IO 1 11 Climatic classification (according to IEC 68 part 1) 55/11/21 Environment (pollution degree in accordance to DIN VDE 19) 2 Internal and external creepage Clearance Standard DIP-4, option 7 and option 9 7 mm 4 mil DIP-4 and option 8 8 mm Standard DIP-4, option 7 and option 9 7 mm 4 mil DIP-4 and option 8 8 mm Insulation thickness DTI.4 mm Note As per DIN EN 6747-5-5, 7.4.3.8.2, this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Rev. 1.9, 27-Aug-15 4 Document Number: 83432 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) I F - Forward Current (ma) 1 1 1 T amb = 11 C T amb = 75 C T amb = 25 C T amb = C T amb = - 55 C I C - Collector Current (ma) 35 3 25 2 15 1 5 I F = 1 ma I F =.5 ma I F = 25 ma I F = 1 ma I F = 5 ma I F = 2 ma.1.6.8 1. 1.2 1.4 1.6 V F - Forward Voltage (V)..1.2.3.4 V CE - Collector Emitter Voltage (V) Fig. 5 - Forward Voltage vs. Forward Current Fig. 8 - Collector Current vs. Collector Emitter Voltage I C - Collector Current (ma) 5 4 3 2 1 I F = 25 ma I F = 2 ma I F = 15 ma I F = 1 ma I F = 1 ma I F = 5 ma 1 2 3 4 5 6 7 8 9 1 V CE - Collector Emitter Voltage (V) V CEsat - Collector Emitter Voltage (V).12 I F = 1 ma.1.8.6.4.2. -6-4 -2 2 4 6 8 1 12 T amb - Ambient Temperature ( C) Fig. 6 - Collector Current vs. Collector Emitter Voltage Fig. 9 - Collector Emitter Voltage vs. Ambient Temperature I CE - Leakage Current (na) 1 I F = ma 1 1 1 1.1.1.1 V CE = 4 V V CE = 24 V V CE = 12 V -6-4 -2 2 4 6 8 1 12 T amb - Ambient Temperature ( C) N CTR - Normalized CTR (sat) 1.4 1.2 1..8.6.4.2 Normalized to CTR value: I F = 1 ma, V CE = 5 V, T amb = 25 C -6-4 -2 2 4 6 8 1 12 T amb - Ambient Temperature ( C) Fig. 7 - Collector Emitter Current vs. Ambient Temperature Fig. 1 - Normalized Current Transfer Ratio vs. Ambient Temperature (sat.) Rev. 1.9, 27-Aug-15 5 Document Number: 83432 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
N CTR - Normalized CTR (non-saturated) 1.4 1.2 1..8.6.4.2 Normalized to CTR value: I F = 1 ma, V CE = 5 V, T amb = 25 C -6-4 -2 2 4 6 8 1 12 T amb - Ambient Temperature ( C) f CTR - Cut-off-Frequency (khz) 1 1 1 1.1 V CE = 5 V, T amb = 25 C 1 1 1 I C - Collector Current (ma) Fig. 11 - Normalized Current Transfer Ratio vs. Ambient Temperature (non-sat.) Fig. 14 - Cut-Off Frequency vs. Collector Current N CTR - Normalized CTR (sat) 2. 1.8 1.6 1.4 1.2 1..8.6.4 T amb = C V CE =.4 V Normalized to: I F = 1 ma, V CE = 5 V T amb = -55 C T amb = 25 C.2 T amb = 11 C..1 1 1 1 Phase Angle (deg) -2-4 -6-8 -1-12 -14-16 V CE = 5 V R L = 1 Ω R L = 1 Ω 1 1 1 1 I F - Forward Current (ma) f - Frequency (khz) Fig. 12 - Current Transfer Ratio vs. Forward Current (sat.) Fig. 15 - Phase Angle vs. Frequency N CTR - Normalized CTR (NS) 2.5 2. 1.5 1..5 T amb = -55 C T amb = 25 C T amb = C T amb = 11 C Normalized to: I F = 1 ma, V CE = 5 V..1 1 1 1 I F - Forward Current (ma) t on, t off - Switching Time (μs) 1 1 1 V CE = 5 V I F = 1 ma 1 5 1 15 2 R L - Load Resistance (kω) t off (μs) t on (μs) Fig. 13 - Current Transfer Ratio vs. Forward Current (non-sat.) Fig. 16 - Switching Time vs. Load Resistance Rev. 1.9, 27-Aug-15 6 Document Number: 83432 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
-5 R L = 1 Ω Voltage Gain -1-15 -2-25 -3-35 -4 R L = 1 Ω V CE = 5 V 1 1 1 1 f - Frequency (khz) Fig. 17 - Voltage Gain vs. Frequency PACKAGE DIMENSIONS in millimeters 4 3 Pin 1 identifier 6.5 ±.5 1 2 4.58 ±.3 7.62 ±.3.85 ±.1 3.5 ±.3.5 typ. 2.8 ±.5 3.3 ±.5.26.5 ±.1 2.54 ±.25 7.62 to 9.98 Option 6 7.62 typ. Option 7 7.62 typ. Option 8 7.62 typ. Option 9 7.62 typ. 3.5 ±.3.35 + -.25.3 3.5 ±.3.25 ±.1 3.5 ±.3.1 ±.1 3.5 ±.3.1 min. 2.7 min. 8 min..6 min. 9.27 min..6 min. 8.16 ±.8 1.16 ±.3 1.16 typ. 1.16 ±.3 12.1 max. 2.54 R.25 1.78.76 2.54 R.25 1.78.76 1.52 8 min. 11.5 8 min. 11.5 1.52 Rev. 1.9, 27-Aug-15 7 Document Number: 83432 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
PACKAGE MARKING (Example of -3X17T) -3 V YWW 25 Notes The VDE logo is only marked on option 1 parts. Option information is not marked on the part. Tape and reel suffix (T) is not part of the package marking. PACKING INFORMATION DEVICE PER TUBE TYPE UNITS/TUBE TUBES/BOX UNITS/BOX DIP-4 1 4 4 Regular, special, or bar code label Tape slot in core 13" 17999-1 Fig. 18 - Tape and Reel Shipping Medium (1 units per reel) Ø 1.55 ±.5 2 ±.1 4 ±.1 1.75 ±.1 7.5 ±.1 16 ±.3 12 ±.1.3 ±.5 22536-2 Fig. 19 - Tape and Packing for Option 7 and Option 9 Rev. 1.9, 27-Aug-15 8 Document Number: 83432 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
TAPE AND REEL Option 8 Fig. 2 - Default Orientation, 2 units/reel DESCRIPTION SYMBOL DIMENSIONS in mm (inch) Tape width W 24 ±.3 (.63) Pitch of spocket holes P 4 ±.1 (.15) F 11.5 ±.1 (.295) Distance of compartment P2 2 ±.1 (.79) Distance of compartment to compartment P1 8 ±.1 (.472) SOLDER PROFILES Temperature ( C) 3 25 2 15 1 5 235 C to 26 C first wave wave ca. 2 K/s 1 C to 13 C 5 s 2 K/s second wave ca. 2 K/s forced cooling Lead temperature full line: typical dotted line: process limits ca. 5 K/s Temperature ( C) 3 25 2 15 1 5 255 C 24 C 217 C max. 12 s max. ramp up 3 C/s max. 26 C 245 C max. 3 s max. 1 s max. ramp down 6 C/s 94 8626 5 1 15 2 25 Time (s) Fig. 21 - Wave Soldering Double Wave Profile According to J-STD-2 for DIP-8 Devices 19841 5 1 15 2 25 3 Time (s) Fig. 22 - Lead (Pb)-free Reflow Solder Profile According to J-STD-2 for SMD-8 Devices HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 Floor life: unlimited Conditions: T amb < 3 C, RH < 85 % Moisture sensitivity level 1, according to J-STD-2 Rev. 1.9, 27-Aug-15 9 Document Number: 83432 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
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