Layers. Layers. Layers. Transistor Manufacturing COMP375 1

Similar documents
Layers. Layers. Layers. Transistor Manufacturing COMP375 1

Basic Fabrication Steps

420 Intro to VLSI Design

Lecture 0: Introduction

Spiral 1 / Unit 8. Transistor Implementations CMOS Logic Gates

VLSI Design. Introduction

INTRODUCTION TO MOS TECHNOLOGY

MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor transistors for logic and memory. Reading: Kasap

Transistors, Gates and Busses 3/21/01 Lecture #

Chapter 3 Basics Semiconductor Devices and Processing

Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1. Topics

+1 (479)

EE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng

Semiconductor Physics and Devices

Digital Systems Laboratory

Lecture 0: Introduction

FUNDAMENTALS OF MODERN VLSI DEVICES

VLSI Design. Introduction

EE 42/100 Lecture 23: CMOS Transistors and Logic Gates. Rev A 4/15/2012 (10:39 AM) Prof. Ali M. Niknejad

Low Power 8-Bit ALU Design Using Full Adder and Multiplexer

Chapter 3 Digital Logic Structures

CMOS Digital Logic Design with Verilog. Chapter1 Digital IC Design &Technology

ECE380 Digital Logic. Logic values as voltage levels

Notes. (Subject Code: 7EC5)

Design of Low power and Area Efficient 8-bit ALU using GDI Full Adder and Multiplexer

Outcomes. Spiral 1 / Unit 8. DeMorgan s Theorem DEMORGAN'S THEOREM. Transistor Implementations CMOS Logic Gates

EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02

VLSI DESIGN AUTOMATION COURSE NOTES THE PRINCIPLES OF VLSI DESIGN

Digital Electronics Part II - Circuits

Architecture of Computers and Parallel Systems Part 9: Digital Circuits

Field Effect Transistors (npn)

1 FUNDAMENTAL CONCEPTS What is Noise Coupling 1

Topic 3. CMOS Fabrication Process

FABRICATION OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag

The Design and Realization of Basic nmos Digital Devices

Low Power 8-Bit ALU Design Using Full Adder and Multiplexer Based on GDI Technique

Semiconductor Diodes

Lecture 9 Transistors

Digital Integrated Circuits A Design Perspective. The Devices. Digital Integrated Circuits 2nd Devices

AN ELECTRET-BASED PRESSURE SENSITIVE MOS TRANSISTOR

Gates and and Circuits

Logic diagram: a graphical representation of a circuit

Layout of a Inverter. Topic 3. CMOS Fabrication Process. The CMOS Process - photolithography (2) The CMOS Process - photolithography (1) v o.

Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced.

ECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits

Computer Architecture (TT 2012)

Chapter 1: Digital logic

EC 1354-Principles of VLSI Design

Chapter 2 : Semiconductor Materials & Devices (II) Feb

ECE/CoE 0132: FETs and Gates

ENG2410 Digital Design CMOS Technology. Fall 2017 S. Areibi School of Engineering University of Guelph

Downloaded from

Investigation on Performance of high speed CMOS Full adder Circuits

2009 Spring CS211 Digital Systems & Lab 1 CHAPTER 3: TECHNOLOGY (PART 2)

A HIGH SPEED & LOW POWER 16T 1-BIT FULL ADDER CIRCUIT DESIGN BY USING MTCMOS TECHNIQUE IN 45nm TECHNOLOGY

BICMOS Technology and Fabrication

FET(Field Effect Transistor)

CMOS VLSI Design (A3425)

ECE 340 Lecture 37 : Metal- Insulator-Semiconductor FET Class Outline:

3. COMPARING STRUCTURE OF SINGLE GATE AND DOUBLE GATE MOSFET WITH DESIGN AND CURVE

Exam 1 ECE 410 Fall 2002

Chapter 3. H/w s/w interface. hardware software Vijaykumar ECE495K Lecture Notes: Chapter 3 1

Lecture 12 Memory Circuits. Memory Architecture: Decoders. Semiconductor Memory Classification. Array-Structured Memory Architecture RWM NVRWM ROM

Power MOSFET Zheng Yang (ERF 3017,

Logic Design (Part 1) Transistors & Gates (Chapter 3)

Figure.1. Schematic of 4-bit CLA JCHPS Special Issue 9: June Page 101

Lecture 020 ECE4430 Review II (1/5/04) Page 020-1

Physical Structure of CMOS Integrated Circuits

Spiral Content Mapping. Spiral 1 / Unit 8. Outcomes DEMORGAN'S THEOREM. Transistor Implementations CMOS Logic Gates

Semiconductors, ICs and Digital Fundamentals

Lecture 020 ECE4430 Review II (1/5/04) Page 020-1

Lecture 4 - Digital Representations III + Transistors

VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras

ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices

Reference. Wayne Wolf, FPGA-Based System Design Pearson Education, N Krishna Prakash,, Amrita School of Engineering

Gates and Circuits 1

Design cycle for MEMS

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.

Module-3: Metal Oxide Semiconductor (MOS) & Emitter coupled logic (ECL) families

CMOS Technology. 1. Why CMOS 2. Qualitative MOSFET model 3. Building a MOSFET 4. CMOS logic gates. Handouts: Lecture Slides. metal ndiff.

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha

Preface to Third Edition Deep Submicron Digital IC Design p. 1 Introduction p. 1 Brief History of IC Industry p. 3 Review of Digital Logic Gate

PHYSICAL STRUCTURE OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag

Contents 1 Introduction 2 MOS Fabrication Technology

444 Index. F Fermi potential, 146 FGMOS transistor, 20 23, 57, 83, 84, 98, 205, 208, 213, 215, 216, 241, 242, 251, 280, 311, 318, 332, 354, 407

Shorthand Notation for NMOS and PMOS Transistors

Digital Integrated Circuits - Logic Families (Part II)

Lecture # 23 Diodes and Diode Circuits. A) Basic Semiconductor Materials B) Diode Current and Equation C) Diode Circuits

Lesson 5. Electronics: Semiconductors Doping p-n Junction Diode Half Wave and Full Wave Rectification Introduction to Transistors-

MODULE-4 Memory and programmable logic

Implementation of Full Adder using Cmos Logic

EMT 251 Introduction to IC Design


MOSFETS: Gain & non-linearity

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004

CS302 - Digital Logic Design Glossary By

Lecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1

EE 330 Lecture 12. Devices in Semiconductor Processes. Diodes

UNIT 3 Transistors JFET

A Low Power and Area Efficient Full Adder Design Using GDI Multiplexer

Transcription:

VLSI COMP375 Computer Architecture Middleware other CS classes Machine Language Microcode Logic circuits Transistors Middleware Machine Language - earlier Microcode Logic circuits Transistors Middleware Machine Language Microcode later this semester Logic circuits Transistors COMP375 1

Middleware Machine Language Microcode Logic circuits COMP370/ELEN327 Transistors Middleware Machine Language Microcode Logic circuits Transistors - Today Periodic Table of Elements Silicon Silicon has a valance of 4 and is in the middle of its row in the periodic table. Pure Silicon is a very poor conductor. Phosphorus has one more electron than Silicon. It is a P type dopant. Boron has one less electron than Silicon. It is an N type dopant. Adding just one part per million or less of a P dopant to silicon gives it extra electrons making it a good conductor. COMP375 2

n-channel MOS transistor NPN Transistor Operation Top View Metal lightly P-doped silicon heavily N-doped silicon Silicon Dioxide (glass) Side View good conductor for gates normally poor conductor good conductor insulator The low concentration P type silicon is a poor conductor. Therefore very little current flows from the source to the gate. Transistor Operation PNP Transistor When positive voltage is applied to the gate, electrons are attracted to the gate. The presence of electrons allows current to flow between the source and drain. Infusing a lot of N dopant in an area makes a well of N doped silicon. A PNP transistor can be built in the well. COMP375 3

Complementary Operation NPN transistors conducts electricity between the source and drain when current is applied to the gate. PNP transistors conducts electricity between the source and drain when no current is applied to the gate. They stop conducting when current is applied to the gate. CMOS Complementary Metal Oxide Semiconductor is a design technique using both NPN and PNP transistors. PNP transistors are used to connect the power to the output. NPN transistors are used to connect the ground to the output. The PNP and NPN circuits are exact logical inverses. NPN Transistor Stick Diagram Gate PNP Transistor Stick Diagram Gate Source Drain Source Drain Conducts when the gate has current. Conducts when the gate does not have current. COMP375 4

Size Considerations Gap Capacitance Capacitance is a circuit s ability to hold a charge. Greater capacitance increases the time required for a circuit to change voltage. Increasing the width of the transistor elements increases the capacitance. The smaller the region of P type silicon between the source and the drain, the faster the transistor. Capacitance Factors Very Large Scale Integration Gate width Top View Transistors and the circuitry connecting them is built on a chip of silicon using photolithography. Millions of transistors can be manufactured on a single chip. Source width COMP375 5

Photoresist Photolithography Etching Photolithography Lift-off Projection Techniques COMP375 6

Logic Gate Components Power Input Output Ground Not Gate When the input is 1 (current) the upper PNP transistor does not conduct. Power cannot flow to the output The lower NPN transistor does conduct. The output is connected to ground. When the input is 0 (no current) the upper PNP transistor t can conduct power to the output. The lower NPN transistor does not connect the output to ground. A A When either A or B is 0, the output is connected to power. When both A and B are one, the output is connected to ground. A B output 0 0 1 0 1 1 1 0 1 1 1 0 NAND Gate COMP375 7

CMOS NAND transistors When A & B are 0, the output is connected to power. When either A or B are one, the output is connected to ground. A B output 0 0 1 0 1 0 1 0 0 1 1 0 NOR Gate Shorts It is important that no combination of inputs connects both the power and ground to the output. Power would flow from the power source to the ground creating a short and melting the chip. The output should always be connected to either the power or the ground. Otherwise the output will float. Static RAM Cell Draw the below gate diagram using only transistors. t COMP375 8

CMOS Static RAM Bit More Complex Example Consider the carry out equation for a one bit adder Cout = AB + BC + AC The complement is Cout = (A+B)(B+C)(A+C) CMOS Carry Circuit COMP375 9