P-channel 20 V, 0.0195 Ω typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications SOT23-6L Figure 1: Internal schematic diagram Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. Table 1: Device summary Order code Marking Package Packaging STT7P2UH7 7L2U SOT23-6L Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. Features Order code V DS R DS(on) max I D STT7P2UH7 20 V 0.0225 Ω @ 4.5 V 7 A October 2014 DocID025142 Rev 3 1/13 This is information on a product in full production. www.st.com
Contents STT7P2UH7 Contents 1 Electrical ratings... 3 2 Electrical characteristics... 4 2.1 Electrical characteristics (curves)... 6 3 Test circuits... 8 4 Package mechanical data... 9 4.1 SOT23-6L package mechanical data... 10 5 Revision history... 12 2/13 DocID025142 Rev 3
Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 20 V V GS Gate-source voltage ± 8 V I D Drain current (continuous) at T pcb = 25 C 7 A I D Drain current (continuous) at T pcb = 100 C 4.4 A I DM (1) Drain current (pulsed) 28 A P TOT Total dissipation at T pcb = 25 C 1.6 W T stg Storage temperature - 55 to 150 C T j Max. operating junction temperature 150 C Notes: (1) Pulse width limited by safe operating area Table 3: Thermal data Symbol Parameter Value Unit R thj-pcb (1) Thermal resistance junction-pcb max 78 C/W Notes: (1) When mounted on 1inch² FR-4 board, 2 oz Cu For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. DocID025142 Rev 3 3/13
Electrical characteristics STT7P2UH7 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS V GS(th) R DS(on) Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Static drain-source on-resistance V GS = 0, I D = 250 µa 20 V V GS = 0, V DS = 20 V 1 µa V DS = 0, V GS = ± 5 V ± 5 µa V DS = V GS, I D = 250 µa 0.4 1 V V GS= 4.5 V, I D = 3.5 A 0.0195 0.0225 Ω V GS= 2.5 V, I D = 3.5 A 0.02 0.025 Ω V GS= 1.8 V, I D = 3.5 A 0.036 0.043 Ω V GS= 1.5 V, I D = 3.5 A 0.05 0.085 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance - 2390 - pf C oss Output capacitance V GS = 0, V DS = 16 V, - 220 - pf f = 1 MHz C rss Reverse transfer - 188 - pf capacitance Q g Total gate charge - 22 - nc Q V DD = 16 V, I D = 7 A, gs Gate-source charge - 4.2 - nc V GS = 4.5 V Q gd Gate-drain charge - 3.6 - nc Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max Unit t d(on) Turn-on delay time - 12.5 - ns t r Rise time V DD = 16 V, I D = 7 A, - 30.5 - ns t d(off) Turn-off delay time R G = 1 Ω, V GS = 4.5 V - 128 - ns t f Fall time - 84.5 - ns 4/13 DocID025142 Rev 3
Electrical characteristics Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 7 A (1) I SDM (2) V SD t rr Source-drain current (pulsed) - 28 A Forward on voltage I SD = 1 A, V GS = 0-1 V Reverse recovery time - 15.8 ns V DD = 16 V Q rr Reverse recovery charge di/dt = 100 A/ms, I SD = - 5.9 nc I 1 A RRM Reverse recovery current - 0.7 A Notes: (1) Pulse width limited by safe operating area. (2) Pulsed: pulse duration = 300 ms, duty cycle 1.5% For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. DocID025142 Rev 3 5/13
Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2: Safe operating area GIPG210520141148SA ID (A) STT7P2UH7 Figure 3: Thermal impedance GIPG210520141158SA K δ=0.5 10 1 Operation in this area is Limited by max R DS(on) 100µs 1ms 10ms 10-1 0.05 0.02 0.1 0.2 0.1 Tj=150 C Tpcb=25 C Single pulse 0.01 0.1 1 10 VDS(V) -2 10-1 10 0 0.01 10-2 Single pulse 10-5 -4 10 10-3 10 tp(s) 10-3 Figure 4: Output characteristics GIPG210520141044SA ID(A) VGS=2.5, 3, 3.5, 4, 4.5, 5V Figure 5: Transfer characteristics GIPG210520141055SA ID (A) VDS=2V 20 15 10 2V 12.00 8.00 5 1.5V 4.00 0 0 2 4 6 8 VDS(V) 0.00 0 0.5 1 1.5 2 VGS(V) Figure 6: Gate charge vs gate-source voltage VGS (V) 4 3 2 VDD=16V ID=7A GIPG280520141717SA Figure 7: Static drain-source on-resistance GIPG210520141102SA RDS(on) (mω) VGS=4.5V 20.5 20.0 19.5 19.0 1 18.5 0 0 5 10 15 20 Qg(nC) 18.0 0 1 2 3 4 5 6 ID(A) 6/13 DocID025142 Rev 3
Figure 8: Capacitance variations GIPG210520141108SA C (pf) Electrical characteristics Figure 9: Normalized gate threshold voltage vs temperature VGS(th) GIPG210520141114SA (norm) 1.4 ID=250µ A Ciss 1.2 1000 1 0.8 Coss Crss 100 0 4 8 12 16 VDS(V) 0.6 0.4 0.2-75 -25 25 75 125 TJ( C) Figure 10: Normalized on-resistance vs temperature GIPG290520141553SA RDS(on) (norm) 1.6 ID=3.5 A VGS=4.5V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Figure 11: Normalized V(BR)DSS vs temperature GIPG210520141132SA V(BR)DSS (norm) ID=1m A 1.04 1 0.96 0.0-75 -25 25 75 125 TJ( C) 0.92-75 -25 25 75 125 TJ( C) Figure 12: Source-drain diode forward characteristics GIPG210520141134SA VSD(V) 0.9 0.8 TJ=-55 C TJ=25 C 0.7 TJ=75 C 0.6 0.5 1 2 3 4 5 6 7 8 ISD(A) DocID025142 Rev 3 7/13
Test circuits STT7P2UH7 3 Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times 8/13 DocID025142 Rev 3
Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DocID025142 Rev 3 9/13
Package mechanical data STT7P2UH7 4.1 SOT23-6L package mechanical data Figure 16: SOT23-6L package drawing 7049714_K 10/13 DocID025142 Rev 3
Package mechanical data Table 8: SOT23-6L package mechanical data mm Dim. Min. Typ. Max. A 1.25 A1 0.00 0.15 A2 1.00 1.10 1.20 b 0.36 0.50 C 0.14 0.20 D 2.826 2.926 3.026 E 1.526 1.626 1.726 e 0.90 0.95 1.00 H 2.60 2.80 3.00 L 0.35 0.45 0.60 θ 0 C 8 C Figure 17: SOT23-6L recommended footprint 7049714_K_footprint DocID025142 Rev 3 11/13
Revision history STT7P2UH7 5 Revision history Table 9: Document revision history Date Revision Changes 26-Aug-2013 1 First release. 04-Jun-2014 2 02-Oct-2014 3 Document status promoted from target data to production data Modified: title Modified: R DS(on) max value in cover page Modified: R DS(on) (typical and maximum) values in Table 4: "On /off states" Modified: the entire typical values in Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source drain diode" Added: Section 2.1: "Electrical characteristics (curves)" Updated: Section 4.1: "SOT23-6L package mechanical data" Minor text changes Updated title, features and description in cover page. Updated Table 4: "On /off states". Minor text changes. 12/13 DocID025142 Rev 3
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