Dual N-Channel Enhancement Mode MOSFET Features Channel 3V/24A, R DS(ON) = 3.9mW (max.) @ = V R DS(ON) = 6.5mW (max.) @ = 4.5V Channel 2 3V/44A, R DS(ON) =.2mW (max.) @ =V R DS(ON) = 2mW (max.) @ =4.5V % UIS + R g Tested Dual Dies Package and Minimize Board Space Lower Q g and Q gd for High-Speed Switching Lower R DS(ON) to Minimize Conduction Losses Reliable and Rugged Lead Free Available (RoHS Compliant) Applications Power Management in Desktop Computer or DC/DC Converters. G2 Pin Description S/D2 S/D2 S/D2 G S/D2 D D D S / D2 (3)(4) (2)(5)(6)(7) G () G2 (8) S2 (Pin 9) DFN5x6G-8_EP2 S2(9) N-Channel MOSFET D Ordering and Marking Information SM734EH Assembly Material Handling Code Temperature Range Package Code Package Code KP : DFN5x6G-8_EP2 Operating Junction Temperature Range C : -55 to 5 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM734EH KP : 734EH XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Absolute Maximum Ratings (T A = 25 C unless otherwise noted) Symbol Parameter Channel Channel 2 Unit Common Ratings V DSS Drain-Source Voltage 3 V S Gate-Source Voltage ±2 V T J Maximum Junction Temperature 5 C T STG Storage Temperature Range -55 to 5 C I S Diode Continuous Forward Current T C =25 C 5 3 A I D I DM a P D Continuous Drain Current T C =25 C 73 86 T C = C 46 8 Pulse Drain Current T C =25 C 2 A Maximum Power Dissipation T C =25 C 3 62.5 T C = C 2.5 25 R qjc Thermal Resistance-Junction to Case Steady State 4 2 C/W I D b Continuous Drain Current T A =25 C 24 44 T A =7 C 9 35 I DM Pulse Drain Current(T=3uS) T A =25 C 6 A P D b R qja b,c R qja d I AS e E AS e Maximum Power Dissipation Thermal Resistance-Junction to Ambient T A =25 C 3.6 3.6 T A =7 C 2.3 2.3 t s 35 35 Steady State 75 75 A W A W C/W Thermal Resistance-Junction to Ambient Steady State 2 2 C/W Avalanche Current, Single pulse L=.mH 24 5 A Avalanche Energy, Single pulse L=.mH 28 25 mj Note a:pulse width is limited by max. junction temperature. Note b:t s and surface mounted on FR-4 board using in 2 pad, 2 oz Cu. Note c:steady time = 999s and surface mounted on FR-4 board using in 2 pad, 2 oz Cu. Note d:steady time = 999s and surface mounted on FR-4 board and the minimum pad size of PCB. Note e:uis tested and pulse width are limited by maximum junction temperature 5 o C(initial temperature T j). 2
Channel Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics Channel Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage =V, I DS =25mA 3 - - V BV DSSt I DSS Drain-Source Breakdown Voltage (transient) Zero Gate Voltage Drain Current =V, I D(aval) =24A T case =25 C, t transient =ns Unit 34 - - V V DS =24V, =V - - T J =85 C - - 3 (th) Gate Threshold Voltage V DS =, I DS =25mA.3.7 2.3 V I GSS Gate Leakage Current =±2V, V DS =V - - ± ma R DS(ON) f Drain-Source On-state Resistance =V, I DS =5A - 3.2 3.9 T J =25 C - 4.8 - =4.5V, I DS =2A - 5 6.5 Gfs Forward Transconductance V DS =5V, I DS =6A - 7 - S Diode Characteristics V SD f t rr Diode Forward Voltage I SD =5A, =V -.8. V Reverse Recovery Time - 28 - t a Charge Time I SD =5A, dl SD /dt=a/ms - 4 - t b Discharge Time V dd =5V - 4 - Q rr Reverse Recovery Charge - 3 - nc Dynamic Characteristics g R G Gate Resistance =V,V DS =V,F=MHz -.6 - W C iss Input Capacitance =V, - 925 - C oss Output Capacitance V DS =5V, - 55 - C rss Reverse Transfer Capacitance Frequency=.MHz - 46 - t d(on) Turn-on Delay Time - - t r Turn-on Rise Time V DD =5V, R L =5W, - 9.6 - I DS =A, V GEN =V, t d(off) Turn-off Delay Time R G =W - 2 - t f Turn-off Fall Time - 9 - Gate Charge Characteristics g Q g Q g Total Gate Charge Total Gate Charge V DS =5V, =V, I DS =2A - 5 2-7 - Q gth Threshold Gate Charge V DS =5V, =4.5V, -.7 - Q gs Gate-Source Charge I DS =5A - 2.2 - Q gd Gate-Drain Charge - 2.5 - Note f:pulse test ; pulse width 3ms, duty cycle 2%. Note g:guaranteed by design, not subject to production testing. ma mw ns pf ns nc 3
Channel 2 Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics Channel 2 Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage =V, I DS =25mA 3 - - V BV DSSt I DSS Drain-Source Breakdown Voltage (transient) Zero Gate Voltage Drain Current =V, I D(aval) =5A T case =25 C, t transient =ns Unit 34 - - V V DS =24V, =V - - T J =85 C - - 3 (th) Gate Threshold Voltage V DS =, I DS =25mA.3.6 2.3 V I GSS Gate Leakage Current =±2V, V DS =V - - ± na R DS(ON) f Drain-Source On-state Resistance =V, I DS =25A -.2 T J =25 C -.5 - =4.5V, I DS =2A -.5 2 Gfs Forward Transconductance V DS =5V, I DS =5A - 28 - S Diode Characteristics V SD f t rr Diode Forward Voltage I SD =25A, =V -.77. V Reverse Recovery Time - 55 - t a Charge Time I SD =25A, dl SD /dt=a/ms - 3 - t b Discharge Time V dd =5V - 25 - Q rr Reverse Recovery Charge - 7 - nc Dynamic Characteristics g R G Gate Resistance =V,V DS =V,F=MHz -.75 - W C iss Input Capacitance =V, - 28 - C oss Output Capacitance V DS =5V, - 85 - C rss Reverse Transfer Capacitance Frequency=.MHz - 4 - t d(on) Turn-on Delay Time t r Turn-on Rise Time V DD =5V, R L =5W, - 4 - I DS =A, V GEN =V, t d(off) Turn-off Delay Time R G =W - 38 - t f Turn-off Fall Time - 25 - Gate Charge Characteristics g Q g Q g Total Gate Charge Total Gate Charge V DS =5V, =V, I DS =25A - 8 - - 42 55-2 - Q gth Threshold Gate Charge V DS =5V, =4.5V, - 5 - Q gs Gate-Source Charge I DS =25A - 5.5 - Q gd Gate-Drain Charge - 7 - Note f:pulse test ; pulse width 3ms, duty cycle 2%. Note g:guaranteed by design, not subject to production testing. ma mw ns pf ns nc 4
Channel Typical Operating Characteristics Power Dissipation Drain Current 35 8 3 7 Ptot - Power (W) 25 2 5 6 5 4 3 2 5 T C 2 4 6 8 2 4 6 T C,V G =V 2 4 6 8 2 4 6 Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) Safe Operation Area 3 3ms ms ms DC Rds(on) Limit T C... VDS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance Thermal Transient Impedance 3 Duty =.5.2...5.2. E-3. Single Pulse R qjc :4 o C/W E-4 E-6 E-5 E-4 E-3.. Square Wave Pulse Duration (sec) 5
Channel Typical Operating Characteristics (Cont.) Safe Operation Area Thermal Transient Impedance 3 Rds(on) Limit 3ms ms ms. ms T A DC s... 3 Normalized Transient Thermal Resistance 2....2 Single Pulse.5..2 Duty =.5 Mounted on in 2 pad R qja :75 o C/W E-3 E-4 E-3.. VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Output Characteristics Drain-Source On Resistance 8 6 4 2 =4,4.5,5,6,7,8,9,V 3.5V 3V RDS(ON) - On - Resistance (mw) 8 6 4 2 =4.5V =V 2.5V..5..5 2. 2.5 3. VDS - Drain - Source Voltage (V) 2 4 6 8 6
Channel Typical Operating Characteristics (Cont.) Gate-Source On Resistance Gate Threshold Voltage 8 I DS =5A.6 I DS =25mA RDS(ON) - On - Resistance (mw) 5 2 9 6 3 Normalized Threshold Voltage.4.2..8.6.4 2 3 4 5 6 7 8 9.2-5 -25 25 5 75 25 5 VGS - Gate - Source Voltage (V) Tj - Junction Temperature ( C) Drain-Source On Resistance Source-Drain Diode Forward 2.5 = V I DS = 5A Normalized On Resistance 2..5..5 IS - Source Current (A) T j =5 o C T j R ON @T j : 3.2mW. -5-25 25 5 75 25 5 Tj - Junction Temperature ( C)...2.4.6.8..2.4 VSD - Source - Drain Voltage (V) 7
Channel Typical Operating Characteristics (Cont.) Capacitance Gate Charge C - Capacitance (pf) 4 2 8 6 4 2 Crss Coss Frequency=MHz Ciss VGS - Gate-source Voltage (V) 9 8 7 6 5 4 3 2 V DS = 5V I DS = 5A 5 5 2 25 3 VDS - Drain-Source Voltage (V) 3 6 9 2 5 QG - Gate Charge (nc) Transfer Characteristics 8 I D - Drain Current (A) 6 4 T j 2 T j 2 3 4 5 6 - Gate-Source Voltage (V) 8
Channel 2 Typical Operating Characteristics Power Dissipation Drain Current 7 2 6 8 Ptot - Power (W) 5 4 3 2 5 2 9 6 3 T C 2 4 6 8 2 4 6 T C,V G =V 2 4 6 8 2 4 6 Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance 3 Rds(on) Limit T C 3ms DC... VDS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance 3..5..2.. Single Pulse Duty =.5.2 R qjc :2 o C/W E-3 E-6 E-5 E-4 E-3. Square Wave Pulse Duration (sec) 9
Channel 2 Typical Operating Characteristics (Cont.) Safe Operation Area Thermal Transient Impedance 5. Rds(on) Limit 3ms ms ms ms s T A DC s. E-3.. 3 Normalized Transient Thermal Resistance 3.. E-3..2 Single Pulse.5..2 Duty =.5 Mounted on in 2 pad R qja :75 o C/W E-4 E-4 E-3.. VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Output Characteristics Drain-Source On Resistance 2 2.5 =3.5,4,5,6,7,8,9,V 6 2 8 4 3V RDS(ON) - On - Resistance (mw) 2..5..5 =4.5V =V 2.5V..5..5 2. 2.5 3. VDS - Drain - Source Voltage (V). 4 8 2 6 2
Channel 2 Typical Operating Characteristics (Cont.) Gate-Source On Resistance Gate Threshold Voltage 6 I DS =25A.6 I DS =25mA RDS(ON) - On - Resistance (mw) 5 4 3 2 Normalized Threshold Voltage.4.2..8.6.4 2 3 4 5 6 7 8 9.2-5 -25 25 5 75 25 5 VGS - Gate - Source Voltage (V) Tj - Junction Temperature ( C) Drain-Source On Resistance Source-Drain Diode Forward 2.5 = V I DS = 25A 2 Normalized On Resistance 2..5..5 IS - Source Current (A) T j =5 o C T j R ON @T j : mw. -5-25 25 5 75 25 5 Tj - Junction Temperature ( C)...2.4.6.8..2.4 VSD - Source - Drain Voltage (V)
Channel 2 Typical Operating Characteristics (Cont.) Capacitance Gate Charge 45 4 Frequency=MHz 9 V DS = 5V I DS = 25A C - Capacitance (pf) 35 3 25 2 5 5 Crss Coss Ciss VGS - Gate-source Voltage (V) 8 7 6 5 4 3 2 5 5 2 25 3 VDS - Drain-Source Voltage (V) 7 4 2 28 35 42 QG - Gate Charge (nc) 5 Transfer Characteristics 2 I D - Drain Current (A) 9 6 T j T j 3 2 3 4 5 6 - Gate-Source Voltage (V) 2
Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS RG VDD IAS tp IL.W VDD EAS tav Switching Time Test Circuit and Waveforms VDS DUT RD VDS 9% RG VGS VDD tp % VGS td(on) tr td(off) tf 3
Disclaimer Sinopower Semiconductor, Inc. (hereinafter Sinopower ) has been making great efforts to development high quality and better performance products to satisfy all customers needs. However, a product may fail to meet customer s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 4
Classification Profile 5
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) C 5 C 6-2 seconds 5 C 2 C 6-2 seconds Average ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness 83 C 6-5 seconds Volume mm 3 <35 Table 2. Pb-free Process Classification Temperatures (Tc) 27 C 6-5 seconds See Classification Temp in table See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <.6 mm 26 C 26 C 26 C.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, A8 Hrs, 8% of VDS max @ Tjmax HTGB JESD-22, A8 Hrs, % of VGS max @ Tjmax PCT JESD-22, A2 68 Hrs, %RH, 2atm, 2 C TCT JESD-22, A4 5 Cycles, -65 C~5 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: 886-3-563588 Fax: 886-3-56358 6