NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level of 5 kv per JESD A These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Applications Battery Switch High Side Load Switch Optimized for Power Management Applications for Portable Products such as Media Tablets, Ultrabook PCs and Cellphones V (BR)DSS R DS(on) MAX I D MAX 6.7 m @.5 V V 5 A 9. m @.5 V P Channel MOSFET S MAXIMUM RATINGS ( unless otherwise stated) Parameter Symbol Value Unit Drain to Source Voltage V DSS V Gate to Source Voltage V GS ±8 V Continuous Drain Current R JA (Note ) Power Dissipation R JA (Note ) Continuous Drain Current R JA s (Note ) Power Dissipation R JA s (Note ) Continuous Drain Current R JA (Note ) Power Dissipation R JA (Note ) Steady State T A = 5 C I D 5 A T A = 85 C T A = 5 C P D.3 W T A = 5 C I D A T A = 85 C 6 T A = 5 C P D.9 W T A = 5 C I D 9 A T A = 85 C 7 T A = 5 C P D.8 W Pulsed Drain Current T A = 5 C, t p = s I DM 6 A Operating Junction and Storage Temperature T J, T stg 55 to +5 ESD (HBM, JESD A) V ESD 5 V Source Current (Body Diode) I S 3 A Lead Temperature for Soldering Purposes (/8 from case for s) C T L 6 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface mounted on FR board using sq in pad, oz Cu.. Surface mounted on FR board using the minimum recommended pad size. G WDFN8 ( 8FL) CASE 5AB (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NTTFS3A8PZTAG 3A8 A Y WW NTTFS3A8PZTWG MARKING DIAGRAM S D S 3A8 D S AYWW D G D = Specific Device Code = Assembly Location = Year = Work Week = Pb Free Package WDFN8 (Pb Free) WDFN8 (Pb Free) 5 / Tape & Reel 5 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. D Semiconductor Components Industries, LLC, October, Rev. Publication Order Number: NTTFS3A8P/D
NTTFS3A8PZ THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction to Ambient Steady State (Note 3) R JA 55 C/W Junction to Ambient Steady State (Note ) R JA 8 Junction to Ambient (t s) (Note 3) R JA 6 3. Surface mounted on FR board using sq in pad, oz Cu.. Surface mounted on FR board using the minimum recommended pad size ( mm, oz. Cu). ELECTRICAL CHARACTERISTICS ( unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (BR)DSS V GS = V, I D = 5 A V Drain to Source Breakdown Voltage Temperature Coefficient V (BR)DSS /T J 6 mv/ C Zero Gate Voltage Drain Current I DSS V GS = V, V DS = 6 V A Gate to Source Leakage Current I GSS V DS = V, V GS = ±5 V ±5 A ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V GS(TH) V GS = V DS, I D = 5 A.. V Negative Threshold Temperature Coefficient V GS(TH) /T J 3.3 mv/ C Drain to Source On Resistance R DS(on) V GS =.5 V I D = A.9 6.7 m V GS =.5 V I D = A 6.9 9. Forward Transconductance g FS V DS =.5 V, I D = 8 A 6 S CHARGES AND CAPACITANCES Input Capacitance C iss 5 pf Output Capacitance C oss V GS = V, f =. MHz, V DS = V 6 Reverse Transfer Capacitance C rss 5 Total Gate Charge Q G(TOT) Threshold Gate Charge Q G(TH). Gate to Source Charge Q GS V GS =.5 V, V DS = V, I D = 8 A 6.5 Gate to Drain Charge Q GD 5. SWITCHING CHARACTERISTICS (Note 6) Turn On Delay Time t d(on) Rise Time t r V GS =.5 V, V DS = V, 6 Turn Off Delay Time t d(off) I D = 8 A, R G = 6. 5 Fall Time t f 7 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD V GS = V, I S = 3 A Reverse Recovery Time t RR Charge Time t a V GS = V, d IS /d t = A/ s, 5 Discharge Time t b I S = 6 A 6 56 nc 3 ns.65. V 7 ns Reverse Recovery Charge Q RR 3 nc 5. Pulse Test: pulse width = 3 s, duty cycle %. 6. Switching characteristics are independent of operating junction temperatures.
NTTFS3A8PZ TYPICAL CHARACTERISTICS 6 V 6 V DS V 5 3.5 V to.5 V V GS =.8 V 5 3 T J = 55 C.5..5..5..5..5 Figure. On Region Characteristics V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( )..9.8.7.6.5..3....5..5 I D = A V GS, GATE VOLTAGE (V) 3. 3.5..5 R DS(on), DRAIN TO SOURCE RESISTANCE ( ).5..5 V GS =.8 V V GS =.5 V V GS =.5 V 3 Figure 3. On Resistance vs. Gate to Source Voltage Figure. On Resistance vs. Drain Current and Gate Voltage R DS(on), NORMALIZED DRAIN TO SOURCE RESISTANCE ( ).6.5..3....9.8.7 5 V GS =.5 V I D =. A 5 5 5 75 5 5 I DSS, LEAKAGE (na),, 6 T J = 85 C 8 6 8 T J, JUNCTION TEMPERATURE ( C) Figure 5. On Resistance Variation with Temperature Figure 6. Drain to Source Leakage Current vs. Voltage 3
NTTFS3A8PZ TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) 8 7 V GS = V 6 f = MHz 56 C iss 8 3 6 8 C oss C rss 6 8 6 8 3 5 6 Figure 7. Capacitance Variation V GS, GATE TO SOURCE VOLTAGE (V) 5 3 Q GS V DS Q GD Q T V GS V DS = V I D = 8 A Q G, TOTAL GATE CHARGE (nc) Figure 8. Gate to Source and Drain to Source Voltage vs. Total Charge 8 6 8 6 t, TIME (ns).95 t d(off) t f t r t d(on) R G, GATE RESISTANCE ( ) V GS =.5 V V DD = V I D = 8 A Figure 9. Resistive Switching Time Variation vs. Gate Resistance I S, SOURCE CURRENT (A)..3..5.6.7 T J = 55 C.8.9. V SD, SOURCE TO DRAIN VOLTAGE (V) Figure. Diode Forward Voltage vs. Current.85.75 I D = 5 A 35 3 V GS(th) (V).65.55.5 POWER (W) 5 5.35.5 5.5 5 5 5 5 75 5 5.E.E.E+.E+ T J, TEMPERATURE ( C) SINGLE PULSE TIME (s) Figure. Threshold Voltage Figure. Single Pulse Maximum Power Dissipation
NTTFS3A8PZ TYPICAL CHARACTERISTICS... V GS = 8 V Single Pulse T C = 5 C R DS(on) Limit Thermal Limit Package Limit Figure 3. Maximum Rated Forward Biased Safe Operating Area s ms ms dc R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 6 5 3 E 6 R JA = 55 C/W Duty Cycle =.5...5.. E 5 E E 3 E E E+ E+ E+ E+3 t, TIME (s) Single Pulse Figure. FET Thermal Response 5
NTTFS3A8PZ PACKAGE DIMENSIONS WDFN8 3.3x3.3,.65P CASE 5AB ISSUE D. C. C 8X b. C A B.5 C X L X. C D A B X D 8 7 6 5 E E 3 c TOP VIEW A SIDE VIEW DETAIL A e/ K. C 6X e DETAIL A X A C SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, 99.. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D AND E DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. PACKAGE OUTLINE MILLIMETERS DIM MIN NOM MAX A.7.75.8 A..5 b.3.3. c.5..5 D D.95 3.3 BSC 3.5 3.5 D.98.. E E.95 3.3 BSC 3.5 3.5 E.7.6.73 e.65 BSC G.3. K.65.8 L.3.3 L.6.3 M..5.5.95.56..6 SOLDERING FOOTPRINT* 8X. MIN.8.3..9..6.8.3 BSC.6...78.83.88.3 BSC.6.. E3.3.3..58.9.63..68.6.6 BSC..6..6.3.37..7...5.55.59.65 PITCH INCHES NOM X.66 MAX.3..6..8.63 E E3 M G 8 5 D BOTTOM VIEW L.75.57.3 3.6.7.37 3.6 DIMENSION: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 87 USA Phone: 33 675 75 or 8 3 386 Toll Free USA/Canada Fax: 33 675 76 or 8 3 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 33 79 9 Japan Customer Focus Center Phone: 8 3 587 5 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTTFS3A8P/D