Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.

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Ordering number : ENA18B SC6144SG Bipolar Transistor V, A, Low VCE(sat) NPN TO-F-FS http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacitance (IC=A) Low collector-to-emitter saturation voltage (VCE(sat)=18mV(typ.)) High-speed switching (tf=ns(typ.)) Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 6 V Collector-to-Emitter Voltage VCEO V Emitter-to-Base Voltage VEBO V Collector Current IC A Collector Current (Pulse) ICP 1 A Base Current IB A Collector Dissipation PC Tc= C, PT 1s W Junction Temperature Tj C Storage Temperature Tstg -- to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 8-.18.16 4..4 SC6144SG Product & Package Information Package : TO-F-FS JEITA, JEDEC : SC-6 Minimum Packing Quantity : pcs./magazine Marking Electrical Connection 1.8. 6.68 1.8. 1.4 MAX.8 1.98.6 C6144 SG LOT No. 1 1.4.4. 1 : Base : Collector : Emitter TO-F-FS Semiconductor Components Industries, LLC, 1 September, 1 D61 TKIM TC-861/1 TKIM/1FA TKIM TC-81 No. A18-1/

SC6144SG Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=4V, IE=A μa Emitter Cutoff Current IEBO VEB=4V, IC=A μa DC Current Gain hfe VCE=V, IC=mA 6 Gain-Bandwidth Product ft VCE=V, IC=A MHz Output Capacitance Cob VCB=V, f=1mhz 6 pf Collector-to-Emitter Saturation Voltage VCE(sat) IC=6A, IB=mA 18 6 mv Base-to-Emitter Saturation Voltage VBE(sat) IC=6A, IB=mA 1. V Collector-to-Base Breakdown Voltage V(BR)CBO IC=μA, IE=A 6 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE= V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=μA, IC=A V Turn-On Time ton 6 ns Storage Time tstg See specified Test Circuit. ns Fall Time tf ns Switching Time Test Circuit PW=μs D.C. 1% IB1 IB OUTPUT INPUT VR RB RL Ω + + VBE= --V μf 4μF VCC=V IC=IB1= --IB=A Ordering Information Device Package Shipping memo SC6144SG TO-F-FS pcs./magazine Pb Free No. A18-/

SC6144SG DC Current Gain, h FE 9 8 6 4 ma 8mA 6mA IC -- VCE ma 4mA 4mA ma ma ma ma 1mA ma ma 1 IB=mA 1 4 Collector-to-Emitter Voltage, V CE -- V IT144 IC -- VBE V CE =V 1 Ta= C C -- C. 1. Base-to-Emitter Voltage, V BE -- V IT146 hfe -- IC Ta= C.V.V.V V VCE=.V Gain-Bandwidth Product, f T -- MHz DC Current Gain, h FE. 4. 4..... 1. ma 4mA ma ma IC -- VCE 18mA ma 16mA 14mA 1mA ma 8mA 6mA 4mA ma. IB=mA. 1.. Collector-to-Emitter Voltage, V CE -- V IT14 hfe -- IC V CE =V Ta= C C -- C.1.1 IT14 ft -- IC V CE =V -- pf Output Capacitance, Cob.1.1 Cob -- VCB IT148 f=1mhz.1 Collector-to-Base Voltage, V CB -- V IT146 Collector-to-Emitter Saturation Voltage, V CE (sat) -- V.1.1 IT149.1.1 I C / I B = VCE(sat) -- IC Ta= C -- C C.1.1 IT1461 No. A18-/

SC6144SG I C / I B = VCE(sat) -- IC VBE(sat) -- IC I C / I B = Collector-to-Emitter Saturation Voltage, V CE (sat) -- V.1 Ta= C C -- C Base-to-Emitter Saturation Voltage, V BE (sat) -- V Ta= -- C C C.1.1.1 IT146 Forward Bias A S O I CP =1A I C =A.1 ms ms DC operation PT=μs Tc= C Single pulse.1.1 Collector-to-Emitter Voltage, V CE -- V IT1 1s 1ms Collector Dissipation, P C -- W.1.1 IT146 PC -- Tc PT 1s 1 4 6 8 14 16 Case Temperature, Tc -- C IT14 No. A18-4/

SC6144SG Magazine Specification SC6144SG No. A18-/

SC6144SG Outline Drawing SC6144SG Mass (g) Unit 1.8 * For reference mm No. A18-6/

SC6144SG ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A18-/