CM150TL-12NF. APPLICATION AC drive inverters & Servo controls, etc CM150TL-12NF. IC...150A VCES...600V Insulated Type 6-elements in a pack

Similar documents
CM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack

CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts

CP10TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 10 Amperes/1200 Volts

QM15HA-H MEDIUM POWER SWITCHING USE

QM30HA-H MEDIUM POWER SWITCHING USE

QM50HA-H MEDIUM POWER SWITCHING USE

QM300HA-2H HIGH POWER SWITCHING USE

QM75DY-H HIGH POWER SWITCHING USE

QM100HY-H HIGH POWER SWITCHING USE

PM200CVA060 PM200CVA060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM200CVA060

QM150HY-H HIGH POWER SWITCHING USE

QM150DY-2HK HIGH POWER SWITCHING USE

QM200HA-2H HIGH POWER SWITCHING USE

QM100DY-2HBK HIGH POWER SWITCHING USE

QM300DY-2H HIGH POWER SWITCHING USE

PM50RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM50RLB060 MITSUBISHI <INTELLIGENT POWER MODULES>

D AB Z DETAIL "B" DETAIL "A"

PM100RL1B060 FLAT-BASE TYPE INSULATED PACKAGE

PM75CSD120 PM75CSD120. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM75CSD120

C N V (4TYP) U (5TYP) QIF (Common Collector)

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current

PM25RL1B120 FLAT-BASE TYPE INSULATED PACKAGE

PM50RSE060 PM50RSE060. APPLICATION General purpose inverter, servo drives and other motor controls PM50RSE060 LABEL

FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30.

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C 35. 1ms IC -IC pulse.

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current

Rating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max.

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=75 C 30.

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current.

PM75RSD060 PM75RSD060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM75RSD060

PM50CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM50CLA120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. 1ms. 1 device. Continuous 1ms. 1 device

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C

XI'AN IR-PERI Company

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C IC. Tc=80 C.

ABB HiPak TM. IGBT Module 5SNG 0150P VCE = 4500 V IC = 150 A

CM1800HCB-34N. <High Voltage Insulated Gate Bipolar Transistor:HVIGBT >

CM600YE2N-12F / CM600YE2P-12F TLI-Series (Three Level Inverter) IGBT 600 Amperes/600 Volts

PM25CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM25CLA120 MITSUBISHI <INTELLIGENT POWER MODULES>

PM75CL1A120 FLAT-BASE TYPE INSULATED PACKAGE

PM150RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLB060.

S R V U T DETAIL "A" AF AE E1C2 (33) E1C2 (32) Dimensions Inches Millimeters

ABB HiPak. IGBT Module 5SNA 1200G VCE = 4500 V IC = 1200 A

ABB HiPak. IGBT Module 5SNA 2400E VCE = 1700 V IC = 2400 A

C Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque

Tc=100 C 300 Tc=25 C 360 Collector current

C Storage temperature Tstg -40 ~ +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Continuous

Tc=25 C 1800 Tc=100 C 1400 Collector current

PM50CSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE

Chapter 2. Technical Terms and Characteristics

Tc=25 C 1800 Tc=100 C 1400 Collector current

APPLICATION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers. 2 φ5.

I CM Repetitive Peak Collector Current tp=1ms. 150 P tot T J = I 2 t. A 2 J =125, t=10ms, V R =0V

T C =25 75 T C = Symbol Parameter/Test Conditions Values Unit

V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.

Symbol Parameter/Test Conditions Values. 200 P tot Power Dissipation Per IGBT T C =25, T Jmax = Symbol Parameter/Test Conditions Values

MG200Q2YS60A(1200V/200A 2in1)

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms TC=100 C 7200

QID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts

MMG50S120B6UC. 1200V 50A IGBT Module. Preliminary PRODUCT FEATURES APPLICATIONS

IGBT MODULE (V series) 1200V / 75A / IGBT, RB-IGBT 12 in one package

IGBT MODULE (V series) 1200V / 100A / IGBT, RB-IGBT 4 in one package

D AB Z DETAIL "B" DETAIL "A"

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms 2400

PM50RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE

TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A

IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package

Symbol Parameter/Test Conditions Values. T C =25, T Jmax = T C =95, T Jmax =

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V

< IGBT MODULES > CM75MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V

SUSPM TM SEPT LUH75G1201_Preliminary LUH75G1201Z*_Preliminary. SUSPM1 94 X 34 X 30mm. 1200V 75A 2-Pack IGBT Module. Features.

L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN

L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN

< IGBT MODULES > CM50MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

QM400HA-H HIGH POWER SWITCHING USE

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V

Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package. Features. Description. Table 1: Device summary

not Recommend for New Design TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE

Features. n-channel TO-247AC. 1

PM150RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE

Features. Description. Table 1: Device summary. Order code Marking Package Packing STGYA120M65DF2AG G120M65DF2AG Max247 long leads Tube

Features. n-channel TO-247AC. 1

Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20

Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description

Viso AC : 1min VAC

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package. Features. Description

Icp 1ms TC=80 C 60 -Ic 30. IC Continuous TC=80 C 30 ICP 1ms TC=80 C 60. Inverter, Brake 175 Converter 150 Operating junciton temperature

SG200-12CS2 200A1200V IGBT Module

Applications: AC motor drives Solar inverter Air-conditioning systems high power converters UPS

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description

VCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W

Icp 1ms TC=80 C 20 -Ic 10. IC Continuous TC=80 C 10 ICP 1ms TC=80 C 20

Y (4 PLACES) G1W E1W G2W E2W U V W G3W E3W G4W RTC RTC RTC E4U E4W. AF JST Connector AWG Wire # SXH-001T-P ~ 22 or SXH-002T-P0.

MG400V2YS60A MG400V2YS60A. High Power Switching Applications Motor Control Applications. Equivalent Circuit

Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70

Transcription:

CMTL-NF CMTL-NF IC... CES...6 Iulated Type 6-elements in a pack PPLICTION C drive inverters & Servo controls, etc OUTLINE DRWING & CIRCUIT DIGRM Dimeio in mm.6. 6 ±. -φ. MOUNTING HOLES N P WP P UP CN L E L U W 6-M NUTS. (.). (9.) +. (SCREWING DEPTH) 6. Housing Type of and (J.S.T.Mfg.Co.Ltd) = P-H-F-, = P-H-F- P CN- CN- N UP- UP- U CN- CN-6 P- P- CN- CN- WP- WP- CN- CN- W CIRCUIT DIGRM Feb. 9

CMTL-NF SOLUTE MXIMUM RTINGS (Tj = C, unless otherwise specified) Symbol CES GES IC ICM IE (Note ) IEM (Note ) PC (Note ) Tj Tstg iso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditio G-E Short C-E Short DC, TC = 9 C * Pulse (Note ) Pulse (Note ) TC = C Terminals to base plate, f = 6Hz, C minute Main terminals M screw Mounting M screw Typical value Ratings 6 ± ~ + ~ +. ~.. ~. Unit W C C rms N m N m g ELECTRICL CHRCTERISTICS (Tj = C, unless otherwise specified) Symbol ICES Parameter Collector cutoff current CE = CES, GE = Test conditio Min. Limits Typ. Max. Unit m GE(th) IGES CE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note ) Qrr (Note ) EC(Note ) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse trafer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance IC = m, CE = ±GE = GES, CE = IC =, GE = CE = GE = CC =, IC =, GE = CC =, IC = GE = ± RG =.Ω, IE = Tj = C Tj = C IE =, GE = IGT part (/6 module) * FWDi part (/6 module) * Case to heat sink, Thermal compound pplied (/6 module) * * : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. * : Typical value is measured by using thermally conductive grease of λ =.9[W/(m K)]. Note. IE, EC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.. Junction temperature (Tj) should not increase beyond C.. Pulse width and repetition rate should be such as to cause negligible temperature rise. 6... 6......9... µ nc µc Ω Feb. 9

CMTL-NF PERFORME CURES COLLECTOR CURRENT IC () OUTPUT CHRCTERISTICS GE = Tj = C 6 COLLECTOR-EMITTER OLTGE CE () 9 COLLECTOR-EMITTER STURTION OLTGE CE (sat) () COLLECTOR-EMITTER STURTION OLTGE CHRCTERISTICS GE = Tj = C Tj = C COLLECTOR CURRENT IC () COLLECTOR-EMITTER STURTION OLTGE CE (sat) () 6 COLLECTOR-EMITTER STURTION OLTGE CHRCTERISTICS Tj = C IC = IC = IC = 6 6 6 EMITTER CURRENT IE () FREE-WHEEL DIODE FORWRD CHRCTERISTICS Tj = C Tj = C GTE-EMITTER OLTGE GE () EMITTER-COLLECTOR OLTGE EC () CPCITE Cies, Coes, Cres () CPCITE CE CHRCTERISTICS Cies Coes Cres GE = SWITCHING TIME () HLF-RIDGE SWITCHING CHRCTERISTICS td(off) td(on) tr CC = GE = ± RG =.Ω Tj = C tf COLLECTOR-EMITTER OLTGE CE () COLLECTOR CURRENT IC () Feb. 9

CMTL-NF REERSE RECOERY TIME trr () REERSE RECOERY CURRENT lrr () REERSE RECOERY CHRCTERISTICS OF FREE-WHEEL DIODE Irr trr CC = GE = ± RG =.Ω Tj = C NORMLIZED TRNSIENT THERML IMPEDE Zth (j c) (ratio) TRNSIENT THERML IMPEDE CHRCTERISTICS (IGT part & FWDi part) Single Pulse, TC = C Under the chip IGT part: Per unit base = Rth(j c) =. FWDi part: Per unit base = Rth(j c) =. EMITTER CURRENT IE () TIME (s) SWITCHING LOSS (mj/pulse) SWITCHING LOSS vs. COLLECTOR CURRENT Esw(off) Esw(on) CC = GE = ± RG =.Ω Tj = C SWITCHING LOSS (mj/pulse) SWITCHING LOSS vs. GTE RESISTE CC = GE = ± IC = Tj = C Esw(off) Esw(on) COLLECTOR CURRENT IC () GTE RESISTE RG (Ω) RECOERY LOSS (mj/pulse) RECOERY LOSS vs. IE Err CC = GE = ± RG =.Ω Tj = C RECOERY LOSS (mj/pulse) RECOERY LOSS vs. GTE RESISTE Err CC = GE = ± IE = Tj = C EMITTER CURRENT IE () GTE RESISTE RG (Ω) Feb. 9

CMTL-NF GTE-EMITTER OLTGE GE () 6 IC = GTE CHRGE CHRCTERISTICS CC = CC = 6 GTE CHRGE QG (nc) Feb. 9