DSAINA Diode M I A FA F.88 High Performance Diode Low Loss and Soft ecovery Single Diode Part number DSAINA Backside: Isolated 2 4 Features / Advantages: Applications: Package: ery low f Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching ectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Isolation oltage: ~ Industry standard outline ohs compliant Epoxy meets UL 94- Base plate: Copper internally DCB isolated Advanced power cycling Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 27 IXYS all rights reserved
DSAINA Symbol SM M I I Definition T 25 C T 5 C atings typ. max. F forward voltage drop I A T 25 C.99 F T C 95 C thermal resistance junction to case.5 K/W FA max. non-repetitive reverse blocking voltage reverse current, drain current I F Conditions A T 25 C F threshold voltage T 5 C.5 for power loss calculation only r F slope resistance.9 mω thjc thch max. repetitive reverse blocking voltage T 25 C average forward current thermal resistance case to heatsink I F 6 A I F 6 A rectangular d.5 P tot total power dissipation T 25 C 8 W T 25 C I FSM max. forward surge current t ms; (5 Hz), sine; T 45 C C J junction capacitance 2 f MHz T 25 C 4.86 T 5 C C min....88.2 Unit ma ma A K/W 4.8 ka nf 27 IXYS all rights reserved
DSAINA Package ) IMS is typically limited by the pin-to-chip resistance (); or by the current capability of the chip (2). In case of () and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. atings Symbol Definition Conditions min. typ. max. Unit I MS MS current ) per terminal 5 A T virtual junction temperature -4 5 C T op operation temperature -4 25 C Weight M D M T dspp/app dspb/apb T stg storage temperature -4 5 C ISOL mounting torque. terminal torque. creepage distance on surface striking distance through air isolation voltage t second t minute terminal to terminal terminal to backside 5/6 Hz, MS; I ISOL ma.5.2 8.6 6.8 25.5.5 g Nm Nm mm mm Logo Product Marking Part No. XXXXX Zyyww abcd Assembly Line DateCode Assembly Code Part description D S A I NA Diode Diode low F Current ating Single Diode everse oltage [] Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. DSAINA DSAINA Tube 598 Similar Part Package oltage class DSAI45NA 45 DSAI2NA 2 Equivalent Circuits for Simulation * on die level T 5 C I max threshold voltage.5 max slope resistance *.25 mω 27 IXYS all rights reserved
DSAINA Outlines 2 4 27 IXYS all rights reserved
DSAINA 6 6 5 4 I F 2 T 25 C 25 C 5 C I. [ma].. T 5 C 25 C C 75 C 5 C 25 C 4 2 C T 8 [pf] 6 4 2 T 25 C..4.8.2 F [] Fig. Max. forward voltage drop characteristics. 2 4 6 8 5 [ ] [] Fig. 2 Typ. reverse current I vs. reverse voltage Fig. Typ. junction capacitance C T vs. reverse voltage 25 2 5 P (A) [W] 5 dc.5.4..7.8 thha.2.4.6.8. 2. 5 25 I F(A) 2 5 5 dc.5.4..7 5 5 2 25 I F(A) Fig. 4a Power dissipation versus direct output current Fig. 4b and ambient temperature 4 8 2 6 [ C] T amb 4 8 2 6 T C [ C] Fig. 5 Average forward current I F(A) vs. case temp. T C.6.2 Z thjc.8 [K/W].4 thi [K/W].7..2.5.5 t i [s]....45.. t [ms] Fig. 6 Transient thermal impedance junction to case 27 IXYS all rights reserved