NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 150 WATTS

Similar documents
MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS

NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD44H11 (NPN) MJD45H11 (PNP)

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

NJL3281D (NPN) NJL1302D (PNP) Complementary ThermalTrak Transistors BIPOLAR POWER TRANSISTORS 15 A, 260 V, 200 W

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W

TIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS

MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS

MJL4281A (NPN) MJL4302A (PNP)

Adc. W W/ C T J, T stg 65 to C

MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction

2N5194G, 2N5195G. Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON VOLTS

MJE15034 NPN, MJE15035 PNP

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS

UMC2NT1, UMC3NT1, UMC5NT1

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors

MUN5311DW1T1G Series.

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors

MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

2N3771, 2N3772. High Power NPN Silicon Power Transistors. 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS

NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

MJE243 - NPN, MJE253 - PNP

NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

2N3055, MJ2955. Complementary Silicon Power Transistors 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors

Vdc. Vdc. W W/ C T J, T stg 65 to +200 C P D

BDW42 NPN, BDW46, BDW47 PNP. Darlington Complementary Silicon Power Transistors

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS

MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSS40301MZ4. Bipolar Power Transistors 40 V, 3.0 A, Low V CE(sat) NPN Transistor NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

BC846BM3T5G. General Purpose Transistor. NPN Silicon

MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

NJVMJD128T4G. NJVMJD128T4G (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

NSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors

MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MMBT5087L. Low Noise Transistor. PNP Silicon

MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, VOLTS 30 WATTS

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 300 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS (1) Figure 1.

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

MBRA320T3G Surface Mount Schottky Power Rectifier

MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors. NPN/PNP Silicon DPAK For Surface Mount Applications

MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in

25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS

NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS

NSTB1002DXV5T1G, NSTB1002DXV5T5G

MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS

MD9 (PNP) MD3 (NPN) ÎÎ ELECTRICAL CHARACTERISTICS (T C = C unless otherwise noted) ÎÎÎ Characteristic Symbol Min Max Unit ÎÎ OFF CHARACTERISTICS Î Col

BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.

MMUN2111LT1G, SMMUN21xxLT3G. NSVMMUN2111LT1G Series. Bias Resistor Transistors

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low V CE(sat) NPN Transistor

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

BC857BTT1G. General Purpose Transistor. PNP Silicon

MMBTA05L, MMBTA06L. Driver Transistors. NPN Silicon

TIP120, TIP121, TIP122,

NSS60601MZ4. 60 V, 6.0 A, Low V CE(sat) NPN Transistor. 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 50 m

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR

NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G. 60 V, 6.0 A, Low V CE(sat) PNP Transistor

MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS

Transcription:

NJW28 (NPN) NJW32 (PNP) Preferred Devices Complementary NPN-PNP Power ipolar Transistors These complementary devices are lower power versions of the popular NJW328 and NJW32 audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications. Features Exceptional Safe Operating Area NPN/PNP ain Matching within % from 5 ma to 3 A Excellent ain Linearity High VCEO High Frequency These are Pb-Free Devices enefits Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal reater Dynamic Range High Amplifier andwith Applications High-End Consumer Audio Products Home Amplifiers Home Receivers Professional Audio Amplifiers Theater and Stadium Sound Systems Public Address Systems (PAs) MAXIMUM RATINS Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-ase Voltage V CO 25 Vdc Emitter-ase Voltage V EO 5. Vdc Collector-Emitter Voltage -.5 V V CEX 25 Vdc Collector Current - Continuous Collector Current - Peak (Note ) I C 5 3 Adc 5 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 25 VOLTS, 5 WATTS Device Package Shipping NJW28 NJW32 CASE 34A xxxx = 28 or 32 = Pb-Free Package A = Assembly Location Y = Year WW = Work Week ORDERIN INFORMATION (Pb-Free) (Pb-Free) MARKIN DIARAM NJWxxx AYWW 3 Units/Rail 3 Units/Rail Preferred devices are recommended choices for future use and best overall value. ase Current - Continuous I.5 Adc Total Power Dissipation @ T C = P D 5 Watts Operating and Storage Junction Temperature Range T J, T stg - 65 to +5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Pulse Test: Pulse Width = 5. ms, Duty Cycle < %. C Semiconductor Components Industries, LLC, 28 January, 28 - Rev. Publication Order Number: NJW28/D

NJW28 (NPN) NJW32 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Case R θjc.83 C/W ELECTRICAL CHARACTERISTICS (T C = unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (I C = 3 ma, I = ) Collector Cutoff Current (V C = 25 V, I E = ) Emitter Cutoff Current (V E = 5. V, I C = ) V CEO(sus) 25 - V I CO - A I EO - 5. A ON CHARACTERISTICS DC Current ain (I C =.5 A, ) (I C =. A, ) (I C = 3. A, ) h FE 5 5 5 - Collector-Emitter Saturation Voltage (I C = 5. A, I =.5 A) ase-emitter On Voltage (I C = 5. A, ) DYNAMIC CHARACTERISTICS Current-ain - andwidth Product (I C =. A,, f test =. MHz) Output Capacitance (V C = V, I E =, f test =. MHz) V CE(sat) -. V V E(on) -.2 V f T 3 - MHz C ob - 4 pf 6 P D, POWER DISSIPATION (W) 4 2 8 6 4 2. ms DC. ms 5. ms ms 2 4 6 8 2 4 6 T C, CASE TEMPERATURE ( C) Figure. Power Derating. V CE, COLLECTOR-EMITTER VOLTAE (V) Figure 2. Safe Operating Area 2

NJW28 (NPN) NJW32 (PNP) 5 5 V E(on), ASE-EMITTER VOLTAE (V) h FE, DC CURRENT AIN C -.5. 5 Figure 3. NJW28 DC Current ain.4.2 -.8.6 C.4.2.. h FE, DC CURRENT AIN V E(on), ASE-EMITTER VOLTAE (V) C -.5. 5 Figure 4. NJW32 DC Current ain 2.4.9.4.9 -.4 C -... Figure 5. NJW28 ase-emitter Voltage Figure 6. NJW32 ase-emitter Voltage V CE(sat), COLLECTOR-EMITTER SATURATION VOLTAE (V). I C /I = C -... Figure 7. NJW28 Saturation Voltage V CE(sat), COLLECTOR-EMITTER SATURATION VOLTAE (V). I C /I = C -... Figure 8. NJW32 Saturation Voltage 3

NJW28 (NPN) NJW32 (PNP) f T, CURRENT AIN ANDWIDTH PRODUCT (MHz) 6 5 4 3 2.. Figure 9. NJW28 Current ain andwidth Product f T, CURRENT AIN ANDWIDTH PRODUCT (MHz) 7 6 5 4 3 2.. Figure. NJW32 Current ain andwidth Product 4

NJW28 (NPN) NJW32 (PNP) PACKAE DIMENSIONS -3LD CASE 34A- ISSUE A P 4 2 3 A K 3X D Q.25 M A C L (3 ) S A E H J SEATIN PLANE F W U NOTES:. DIMENSIONIN AND TOLERANCIN PER ASME Y4.5M, 994. 2. CONTROLLIN DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED ETWEEN.5 AND.3mm FROM THE TERMINAL TIP. 4. DIMENSION A AND DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR ATE URRS. MILLIMETERS DIM MIN NOM MAX A 9.7 9.9 2. 5.4 5.6 5.8 C 4.6 4.8 5. D.8..2 E.45.5.65 F.8 2. 2.2 5.45 SC H.2.4.6 J.55.6. K 9.8 2. 2.2 L 8.5 8.7 8.9 P 3.3 3.5 3.7 Q 3. 3.2 3.5 U 5. REF W 2.8 3. 3.2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should uyer purchase or use SCILLC products for any such unintended or unauthorized application, uyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PULICATION ORDERIN INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. ox 563, Denver, Colorado 827 USA Phone: 33-6-2 or 8-344-386 Toll Free USA/Canada Fax: 33-6-276 or 8-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 8-3-5773-385 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NJW28/D